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Global optimization of process parameters for low-temperature SiN_(x) based on orthogonal experiments

Advances in Manufacturing 2023年第2期11卷 181-190页

作者： Lian-Qiao Yang Chi Zhang Wen-Lei Li Guo-He Liu Jia-Qi Wu-Ma Jin-Qiang Liu Jian-Hua Zhang School of Materials Science and Engineering Shanghai UniversityShanghai200444People's Republic of China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai200072People's Republic of China Huawei Technologies Co. LtdShanghai200120People's Republic of China

Low-temperature silicon nitride(SiNx)films deposited by plasma-enhanced chemical vapor deposition(PECVD)have huge application potential in the flexible ***,the applicability of SiNx largely depends on the film’s general properties,including flexibility,deposition rate,residual stress,elastic modulus,fracture strain,dielectric constant,refraction index,*** optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process ***,an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor *** of all,the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics,including radio frequency(RF)power,pressure,silane flow rate,ammonia flow rate and nitrogen flow ***,the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate,residual stress,dielectric constant,elastic modulus,fracture strain,refractive ***,the optimal solution of the SiNx film was finally obtained and verified.

关键词： Plasma-enhanced chemical vapor deposition(PECVD) Low-temperature silicon nitride(SiNx) Flexible display Taguchi orthogonal experiment Process optimization

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Analysis and Research Based on Electrohydrodynamic Inkjet Printing 21

Analysis and Research Based on Electrohydrodynamic Inkjet Pr...

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21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024

作者： Chen, Zhaoyu Wang, Xinyi Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai201800 China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai200072 China School of Microelectronics Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University 201800 China

ISBN: (纸本)9798331541149

Electrohydrodynamic (EHD) inkjet printing has the advantages of high precision and high automation, and its forming mechanism is complex. In this paper, the stress of Taylor cone and its influencing factors were analyzed systematically, and explored the influence of different process parameters on the printing process and effect. The results showed that the larger the voltage, the larger the droplet;the longer the cycle and voltage duration, the larger the droplet;the droplet size was linear with voltage and period. The influence of the printing height on the droplet size was very obvious. Excessive voltage made the printing process very unstable and inaccurate, and the droplet size gap was large and the droplet printing position deviated. Hope to provide some ideas for related research. ©2024 IEEE.

关键词： Ink jet printing

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Flexible Active-matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-production Compatible Process

Flexible Active-matrix Micro-LED Display Utilizing InSnO TFT...

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2024 IEEE International Electron Devices Meeting, IEDM 2024

作者： Yu, Zuoxu Sang, Yimeng Zhang, Yuzhen Zhang, Yiyang Shi, Runxiao Liu, Siyang Tao, Tao Li, Xifeng Peng, Cong Zhang, Rong Wu, Wangran Zhuang, Zhe Liu, Bin Sun, Weifeng School of Integrated Circuits National ASIC System Engineering Research Center Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (纸本)9798350365429

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm2V-1s-1, via mass-production compatible processes utilizing SiO2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs (μ-LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded μ-LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix μ-LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future. © 2024 IEEE.

关键词： Thin film transistors

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Highly Efficient Light-emitting Devices Based on Quantum dots/Perovskites

Highly Efficient Light-emitting Devices Based on Quantum dot...

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International Conference on display Technology, ICDT 2022

作者： Wang, Lin Kong, Lingmei Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road 200072 China

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Enhancing crystal integrity and structural rigidity of CsPbBr_(3) nanoplatelets to achieve a narrow colorsaturated blue emission

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Light(Science & applications) 2024年第5期13卷 985-997页

作者： Qianqian Huang Wenxu Yin Bo Gao Qingsen Zeng Dong Yao Hao Zhang Yinghe Zhao Weijia Zheng Jiaqi Zhang Xuyong Yang Xiaoyu Zhang Andrey L.Rogach Key Laboratory of Automobile Materials MOE School of Materials Science&Engineeringand Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy MaterialsJilin UniversityChangchunChina. State Key Laboratory of Supramolecular Structure and Materials College of ChemistryJilin UniversityChangchunChina. State Key Laboratory of Materials Processing and Die&Mould Technology School of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhanHubeiChina. Department of Chemistry University of VictoriaVictoriaBCCanada. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina. Department of Materials Science and Engineering and Centre for Functional Photonics(CFP)City University of Hong KongHong Kong S.A.RChina

Quantum-confined CsPbBr_(3) perovskites are promising blue emitters for ultra-high-definition displays,but their soft lattice caused by highly ionic nature has a limited ***,we endow CsPbBr_(3) nanoplatelets(NPLs)with atomic crystal-like structural rigidity through proper surface engineering,by using strongly bound N-dodecylbenzene sulfonic acid(DBSA).A stable,rigid crystal structure,as well as uniform,orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage,by switching from molecular clusters to mono-octahedra,while interaction with DBSA resulted in formation of a Cs_(x)O monolayer shell capping the NPL *** a result,both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA,which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand ***,rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films,which facilitates efficient charge injection and *** photoluminescence of the produced CsPbBr_(3) NPLs is bright(nearly unity emission quantum yield)and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K,while the bandwidth of the electroluminescence(peaked at 460 nm)also reaches a record-narrow value of 15 nm at room *** value corresponds to the CIE coordinates of(0.141,0.062),which meets Rec.2020 standards for ultra-high-definition displays.

关键词： temperature stability narrow

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Optimizing bendability of flexible electronic devices using a neutral layer strategy

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Moore and More 2025年第1期2卷 1-18页

作者： Wu, Majiaqi Jian, Maoliang Zhang, Jianhua Yang, Lianqiao School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

The neutral layer (NL) strategy is a key technique for improving the bendability of flexible electronic devices. In this study, by considering a three-layer structure as an example, the results obtained by finite element analysis (FEA) showed that the NL gradually moved to the top surface of the film as the film thickness and Young’s modulus increased, which are similar to the results produced by theoretical calculations. Subsequently, we optimized the thickness of a single NL structure and the failure bending radius of an indium tin oxide (ITO) electrode was reduced by 50% after optimization. In order to address the problems that affect the design of a single NL, we used optical clear adhesive (OCA) to generate multiple NLs. The FEA method was again applied to the structure and the results showed that decreasing the elastic modulus of the OCA and film thickness could reduce the maximum strain in the film. Finally, the effects of the OCA parameters on the protection of a multiple-layer ITO electrode structure were verified in bending experiments, which showed that the strain on ITO could be reduced from 5.6% to almost 0 in the two-electrode structure. The proposed strategies for designing single and multiple NLs can provide some guidance to facilitate optimizing the electronic infrastructure of flexible devices.

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Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 948-951页

作者： Gong, Yingqun Shi, Yuxin Huo, Sitao Wang, Lin Zhang, Xiaofei Kong, Lingmei Wang, Sheng Yang, Yingguo Yang, Xuyong Shanghai University Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200072 China Seoul National University Department of Materials Science and Engineering Seoul08826 Korea Republic of Shanghai Tianma Micro-Electronics Company Ltd. Shanghai110044 China Zhangjiang Laboratory Shanghai200031 China Fudan University School of Microelectronics Shanghai200433 China

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn2+ oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn2+ and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn2+, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI6 octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m−2. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs. © 1980-2012 IEEE.

关键词： Perovskite

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基于低浓度掺杂TTF-HLCT一体化分子提供的多重激子循环通道增强深蓝光OLED的稳定性

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Science China Materials 2024年第7期67卷 2161-2168页

作者：唐振宇龚乐帆郭浩清杨爽罗骏唐荣肖静张震曲波陈志坚肖立新 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China College of Physics and Electronic Engineering Taishan UniversityTaian 271000China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

目前,商用的深蓝有机发光二极管(OLED)使用的三重态-三重态融合(TTF)型发光材料只能捕获50%的三重态(T_(1))激子,导致其器件效率较低.基于窄带蓝色发射体的热激活延迟荧光(TADF)和超荧光策略可以实现接近100%的激子利用率,然而,在发射层... 详细信息

目前,商用的深蓝有机发光二极管(OLED)使用的三重态-三重态融合(TTF)型发光材料只能捕获50%的三重态(T_(1))激子,导致其器件效率较低.基于窄带蓝色发射体的热激活延迟荧光(TADF)和超荧光策略可以实现接近100%的激子利用率,然而,在发射层(EML)中停留的高能量T_(1)激子通常会导致不可避免的分子降解,从而限制了器件的使用寿命.为了解决这一问题,本文研究了一种TTF-杂化局域-电荷转移态(HLCT)一体化分子,旨在通过多个激子回收通道降低EML内T_(1)激子的密度,从而提高高效深蓝OLED的稳定性.通过TTF过程回收T_(1)激子,通过HLCT过程利用高能三重态(Tn)激子,可以提高EML中三重态激子的利用率.此外,低浓度掺杂的TTF-HLCT分子在TADF体系中可以减轻T_(1)激子猝灭造成的效率损失.最后,实现了外量子效率(EQE)为25.9%、CIE为(0.131,0.050)、蓝光指数(CE由CIEy校准)为312 cd A^(−1) CIE_(y)^(−1)的顶发射OLED,并且其寿命T90@1000 cd m^(−2)从0.5小时延长到6.1小时.本工作揭示了低浓度TTF-HLCT分子掺杂的潜力,作为一种可行的解决方案,可以最大限度地减少效率猝灭,并解决蓝光OLED的稳定性问题.

关键词： organic light-emitting diode stability multiple ex-citon recycling channels deep blue emission TTF-HLCT

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Thermally Activated Delayed Fluorescent Host for Highly Efficient and Stable Deep-Red OLEDs

Thermally Activated Delayed Fluorescent Host for Highly Effi...

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International Conference on display Technology, ICDT 2022

作者： Wang, Ke Xia, Rongrong Guo, Jianfeng Zhang, Zhen Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 China

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Dual-Molecule Hosts for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with Low Efficiency Roll-Off

Dual-Molecule Hosts for Highly Efficient Green Phosphorescen...

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International Conference on display Technology, ICDT 2022

作者： Xia, Rongrong Wang, Ke Guo, Jianfeng Wang, Hengdan Zhang, Zhen Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai200072 China

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