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High-Performance Stable Hybrid Inorganic-Organic Light-Emitting

SmartMat 2025年第1期6卷 195-202页

作者： Huixue HuangI Zhagen Miao?|Haikuo Gao I Jin Cao|Yanqiong ZhengI Can Gao?|Xifeng Li|Guangcai Yuan+Huani Dong D Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina I 2Bejing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBejingChina I 3shandong Engineering Research Center of Aeronautical Materials and DevicesCollege of Aeronautical EngineeringShandong University of AeronauticsBinzhouChina I 4BOE Technology Group Co.Ltd.BeijingChina

Light-emitting transistors(LETs)as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent *** construction of high-performance area-emission LETs with low power con-sumption and good reliability is urgently needed for advancing their applications,however,this integration has not been realized within a single ***,we demonstrate a kind of planar-driven hybrid LET(PDHLET)that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same *** incorporating an indium-zinc-gallium-oxide(InZnGeO)conducting layer and organic emissive layer,a high-performance stable blue-emissive PDHLET is constructed,giving a high Ion/lofr ratio approaching 6.1×10°and a low Von of 5.5 V along with maximum brightness of 1264 cd/m?as well as small Vrh shift of 0.5V after 1000s positive stress ***,a systematic simulation,including charge concentration and Langevin recombination rate,is carried out on PDHLET for the first time,demonstrating good consistency with experimental *** confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area *** study provides a new avenue for constructing high-performance stable LETs toadvancevarious field applications.

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Thermodynamic Analysis of Multi-Stage Thermal Compression Bonding for Fabricating Vertically Stacked Micro-Led Array

Thermodynamic Analysis of Multi-Stage Thermal Compression Bo...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lianyu Wang Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Vertical full-color Micro-LEDs based on flip-chip bonding technology are of great significance in high-resolution display applications, as they have many advantages such as high pixel density, high brightness, and wide color gamut. However, the construction of vertical full-color Micro-LEDs requires multiple thermal compression bonding (TCB). Therefore, thermal stress analysis during multiple TCB is necessary. In this work, the surface thermal stress of a 5×5 vertical Micro-LED array during multi-stage TCB is studied by finite element method (FEM) simulations. The stresses at LED-LED bonding interface and stacked LED-backplane bonding interface as well as the interactions between the two bondings are investigated. The results of different bonding temperatures, material combinations, and interconnected metal diameters and depths on the mean stresses at the bonding interface are analyzed, and then the adequacy of bonding and risk of debonding are assessed. The results show that among the hybrid bonding material combinations set in the simulation, the Cu/ Al 2 O 3 has the largest interfacial stress. In addition, decreasing the interconnected metal diameter and lowering the bonding temperature can relieve the interfacial stress, while the interconnected metal depth has no significant effect on the bonding stress. The key advantage of this work is that it can help establish design and process guidelines to shorten the development cycle of vertical full-color Micro-LEDs based on flip-chip bonding technology.

关键词： Thermodynamics Photonic band gap Metals Thermal analysis Finite element analysis Flip-chip devices Bonding Stress Thermal stresses Guidelines

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Monolithically Integrated Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Monolithically Integrated Temperature Sensor Based on p-GaN/...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Qingxin Liu Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

A monolithically integrated temperature sensor circuit based on a p-GaN/AlGaN/GaN heterojunction is proposed. The sensor comprises two parts: the first part is a temperature-sensitive voltage source formed by a two-dimensional electron gas (2DEG) resistor and a schottky barrier diode (SBD) in series, and the second part is a resistor-transistor logic (RTL) inverter formed by a 2DEG resistor and a p-GaN high electron mobility transistor (HEMT) in series. The output voltage of the temperature-sensitive voltage source is connected to the gate of the p-GaN HEMT in the second part, providing the gate voltage. According to data obtained from TCAD simulation results, the output voltage of the temperature-sensitive voltage source exhibits positive temperature dependence. The output voltage of the RTL inverter exhibits a negative temperature dependence. When the temperature sensor is properly biased, the voltage division between the SBD and the 2DEG resistor in the temperature-sensitive voltage source reallocates as the temperature rises, causing the gate voltage of the connected RTL inverter to increase. This increasement enhances the temperature-induced variation in the RTL inverter's output voltage, increasing the sensitivity of the temperature sensing circuit from 4 mV/K with a fixed gate voltage to 14 mV/K. This simulation demonstrates a compact monolithic integration sensor for monitoring the on-chip temperature of GaN power integrated circuits for protection and control.

关键词： Temperature sensors Resistors Temperature dependence Sensitivity HEMTs Logic gates Thermal management Inverters system-on-chip MODFETs

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A Low Delay AES Round Transform Architecture Using Constant Matrix Multiplications Merging Technologies 17

A Low Delay AES Round Transform Architecture Using Constant ...

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17th IEEE Conference on Industrial Electronics and applications, ICIEA 2022

作者： Zheng, Xinxing Zhang, Xiaoqiang Yang, Fan Xu, Mingyu Yan, Han Wuhu Institute of Technology College of Information Engineering Wuhu China Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment Ministry of Education Wuhu China Engineering Research Center of Vehicle-Mounted Display Integration System Wuhu China Anhui Polytechnic University College of Electrical Engineering Wuhu China

ISBN: (纸本)9781665409841

This paper presents a low delay architecture design method for the hardware implementation of the advanced Encryption Standard (AES) algorithm. The proposed architecture is designed by using constant matrix multiplications (CMM) merging technologies. To reduce the area cost in hardware implementations, S-box/InvS-box is usually implemented with composite field arithmetic (CFA) technologies. In this paper, CMM in CFA-based S-box/InvS-box are further merged with constant coefficient multiplications in MixColumns/ InvMixColumns, which can also be expressed as CMM forms. By the merging, the delay of the hardware implementation of encryption round transform is reduced at the cost of slight area cost increasing, and both delay and area cost are reduced in hardware implementations of decryption round transform. Hardware complexities analysis indicates that our designs have less delay compared with previous works. © 2022 IEEE.

关键词： Cryptography

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Synthesis and application of a novel 9,9-diethyl-1,2-diaryl-1,9-dihydrofluoreno[2,3-d]imidazole for blue organic light emitting diode

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Chinese Chemical Letters 2020年第1期31卷 64-66页

作者： Xueying Wang Zhangcheng Liao Tianqi Wang Haixia Lin Zixing Wang Yongmei Cui Department of Chemistry College of Sciences.Shanghai UniversityShanghai 200444China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

Two novel 2-(4-(9,9-disubstitued-9 H-fluoren-2-yl)phenyl)-9,9-diethyl-l-phenyl-1,9-dihydrofluoreno-[2,3-d]imidazole derivatives 2 a and 2 b were synthesized and *** photophysical and electrochemical properties,thermal stability property,and electroluminescence(EL)performance of 2 b were *** fabricated device based on 2 b doping into 4,4’-N,N’-dicarbazole-biphenyl(5%)as an emitter present a maximum brightness of 1272 cd/m^2 at 4 V with the CIE coordinate of(0.1590,0.0465).

关键词： Fluorene Imidazole Photoluminescence Electroluminescence

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Double Hilbert transform based nonlinear harmonics correction for fringe projection profilometry

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Optik 2025年 327卷

作者： Wang, Beibei sun, Huanghe Huang, Chaoguang Huang, Wenbin Wang, Haijian Li, Wenjie Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin541004 China Engineering Research Center of Digital Imaging and Display Ministry of Education Soochow University Suzhou215006 China Guilin Kenvin Peter Technology Co. Ltd. Guilin541001 China

Fringe projection profilometry (FPP) has the advantages of large field of view, high precision and resolution, and is widely used in industrial inspection, medical treatment, aerospace and other fields. The nonlinear response between the camera and the projector in the system will affect the sinusoidal intensity of the captured fringe images, produce periodic phase errors, and affect the final reconstruction accuracy. Traditional double N-step phase shift (NPS) and Hilbert transform (HT) methods only correct the fundamental harmonic part of the phase nonlinear errors, and ignore the rest of the higher harmonic. Therefore, a double HTs based nonlinear phase error correction method is proposed, taking the higher order nonlinear harmonics into account. The artificial sinusoidal fringe images without background term are constructed using the wrapped phase calculated by captured fringe images. Then the HT is performed to convert the phase error to multiplication from addition, which can realize error balance in phase calculation. After obtaining the new phase, reoperation of artificial fringe generation and HT (AHT) is carried out to effectively remove the high order harmonic part of nonlinear harmonics. In proposed method, the wrapped phase calculated by captured fringe images is directly used to generate the artificial fringe images, which does not require additional projection patterns and realize real-time correction of phase nonlinear errors with high accuracy. Furthermore, direct artificial fringe generation also can efficiently avoids the effect of background intensity to the HT. Theoretical analysis, simulation analysis and experimental verification all prove the feasibility and superiority of the proposed method. © 2025 Elsevier GmbH

关键词： Harmonic analysis

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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Principles, fabrication, and applications of halide perovskites-based memristors

FlexMat

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FlexMat 2024年第2期1卷 127-149页

作者： Xiaozhe Cheng Zhitao Dou Hong Lian Zhitao Qin Hongen Guo Xifeng Li Wai-Yeung Wong Qingchen Dong MOE Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai China School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai China Department of Applied Biology and Chemical Technology The Hong Kong Polytechnic University (PolyU) Hong Kong China School of Microelectronics Shanghai University Shanghai China Qingchen Dong and Wai-Yeung Wong.

In recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in-memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs-based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs-based memristors are discussed. Finally, the research status and development prospects of HPs-based memristors are outlined.

关键词： artificial synapse crystal structure halide perovskites memristor

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Light Field Reconstruction in Angular Domain with Multi-Models Fusion Through Representation Alternate Convolution

SSRN

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SSRN 2022年

作者： Cao, Fengyin Huang, Xinpeng An, Ping Yang, Chao Shanghai Institute for Advanced Communication and Data Science School of Communication and Information Engineering Shanghai University Shanghai200444 China Key Laboratory for Advanced Display and System Application Ministry of Education Shanghai200072 China

To alleviate the spatial-angular trade-off in light fields (LFs), LF super-resolution (SR) has been studied. Most of current methods only concern limited relations in LFs, which leads to the insufficient exploitation of the multi-dimensional information. To address this issue, we present a multi-models framework for LFSR in this paper. Models which embody LF from distinct aspects are integrated to constitute the framework. Therefore, the number and the arrangement of these models and the depth of each model determine the framework’s performance, we make the comprehensive analysis on these factors to reach the best result. However, models in the framework are isolated to each other as the unique inputs are required. To tackle this issue, the representation alternate convolution (RAC) is introduced. As the fusion is conducted through the RAC, the multi-dimensional information in LFs is fully exploited. Experimental results demonstrate that our method achieves superior performance against state-of-the-arts techniques. © 2022, The Authors. All rights reserved.

关键词： Convolution

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Photoresponses Improvement of ZnO Thin Film Transistor by Using a HfO2-Al2O3Double Dielectrics 21

Photoresponses Improvement of ZnO Thin Film Transistor by Us...

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21st International Conference on Electronic Packaging Technology, ICEPT 2020

作者： Che, Bowen Zhang, Yongpeng DIng, Xingwei Key Laboratory of Advanced Display and System Application Ministry of Education School of Mechatronics and Automation Shanghai University Shanghai China

ISBN: (纸本)9781728168265

In this work, we have fabricated two bottom-gate zinc oxide thin film transistors (TFTs) with single-layer HfO2 and double-layer HfO2-Al2O3 dielectrics by atomic layer deposition (ALD). The TFT with HfO2-Al2O3 dielectric exhibited better electrical characteristics, such as a higher field effect mobility of 6.1 cm2/V•s and a lower subthreshold swing of 0.124 V/decade. At the same time, the optical properties is also improved significantly with larger responsivity (6.05 A/W) and UV-to-visible rejection ratio (6.05×104). These results are attributed to lower interface trap states between channel layer and dielectric layer by an Al2O3 interlayer. © 2020 IEEE.

关键词： Atomic layer deposition

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