With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to ...
详细信息
ISBN:
(纸本)9781479906741
With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to its excellent electrical and thermal conductivities. In the present paper, the application of CNT bundles as chip bumps was experimentally investigated. The electrical resistances of the CNT interconnects were measured, and the thermal and humidity test were conducted. In addition, the CNT forests on fine pitch copper lines under various environmental test conditions were observed to evaluate the stability.
Various methods for lip segmentation have been proposed, it still remains a challenging and difficult problem due to high variability of lip color and low chromatic contrast between the lip and skin. A novel automatic...
详细信息
Top-contact thin film transistors(TFTs) using radio frequency(RP) magnetron sputtering zinc oxide (ZnO) and silicon dioxide(SiO;) films as the active channel layer and gate insulator layer,respectively,were **...
详细信息
Top-contact thin film transistors(TFTs) using radio frequency(RP) magnetron sputtering zinc oxide (ZnO) and silicon dioxide(SiO;) films as the active channel layer and gate insulator layer,respectively,were *** performances of ZnO TFTs with different ZnO film deposition temperatures(room temperature, 100℃and 200℃) were *** with the transistor with room-temperature deposited ZnO films, the mobility of the device fabricated at 200℃is improved by 94%and the threshold voltage shift is reduced from 18 to 3 V(after 1 h positive gate voltage stress).Experimental results indicate that substrate temperature plays an important role in enhancing the field effect mobility,sharping the subthreshold swing and improving the bias stability of the *** force microscopy was used to investigate the ZnO film *** reasons for the device performance improvement are discussed.
The current development of electronic products towards miniaturization and multifunction is leading to an increase in the power density of chip and *** high power consumption and corresponding heat dissipation are two...
详细信息
ISBN:
(纸本)9781467316828
The current development of electronic products towards miniaturization and multifunction is leading to an increase in the power density of chip and *** high power consumption and corresponding heat dissipation are two of the most serious limitations for high performance *** combination of the carbon nanotube (CNT) with outstanding thermal properties with an air jet cooling provides a promising option for the heat dissipation of high-powered components and *** the present paper,the CNTs are utilized to manufacture the pin-fins for the micro-cooler,and the performance and evaluation of this CNT-based micro-pin-fin cooler are investigated both experimentally and *** effects of various parameters,such as the jet velocity and height,the fin size and shape,and so on,on the flow field and temperature distribution characteristics are comprehensively considered and *** obtained results indicate that the CNT-fins are of quite good strength and thermal performance in the jet impingement cooling environment.
Recently the active-matrix organic light-emitting diode (AMOLED) has emerged as a very promising flat-panel display technology because of its potential widely application for the development of high resolution and fle...
详细信息
Recently the active-matrix organic light-emitting diode (AMOLED) has emerged as a very promising flat-panel display technology because of its potential widely application for the development of high resolution and flexible full color flat panel displays. However, the encapsulation of AMOLED is studied and developed due to the top-emission structure used in AMOLED. Different from the bottom-emission structure, the top-emission structure requests the light escaping from the device through the transparent moisture barrier layer. In this paper, we investigate the hermetic joining process for glass-to-glass laser bonding with glass frit as an intermediate layer , using a simplified encapsulation structure. The whole process includes steps such as screen printing, presintering and laser bonding. Through experiments study, parameters as laser power, scan speed, laser beam radius and preheating temperature show a significant effect on the bonding process. The influences of process parameters on laser bonding quality are also studied. Furthermore, the strengths of bonded specimens are measured using a shear strength tester and results show that the laser bonding specimens satisfy the military standard MIL-STD-883G. Micrographs of the bonded glass-to-glass interface are observed and analyzed. The optimal parameters are acquired by orthogonal test and then proved in five experiments.
This paper discusses a kind of optimal method used for searching flat panel display (FPD) scanning matrix. The method adopts bionic algorithm: genetic algorithm (GA) and particle swarm optimization (PSO) algori...
详细信息
This paper discusses a kind of optimal method used for searching flat panel display (FPD) scanning matrix. The method adopts bionic algorithm: genetic algorithm (GA) and particle swarm optimization (PSO) algorithm. The method using single GA is more time-consuming, and the search efficiency is low in later evolution; the PSO algorithm is easily falling into the local optimal solution and appears the premature convergent phenomenon. Hence, a hybrid approach of GAPSO is found to optimize the search for high grayscale weights scanning matrix. Finally in the acceptable time, it finds a weight scanning matrix (WSM) of 256 gray scales with Matlab, whose scanning efficiency reaches 94.73% and the linearity is very good.
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films...
详细信息
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and 'spectrophotometry, respectively. The influence of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10^-2 Ω-cm2, which suggests that a good ohmic contact exists between In2O3 : Sn (ITO) and IGZO film.
Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO...
详细信息
Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process.
A lot of work has focused on the development of zinc oxide thin film for the active layer for thin film transistors in recent years. In present article, the active layers for zinc oxide thin film transistors were firs...
详细信息
A lot of work has focused on the development of zinc oxide thin film for the active layer for thin film transistors in recent years. In present article, the active layers for zinc oxide thin film transistors were first time prepared by r.f. Magnetron sputtering using a simply compacted 3-inch-diameter zinc oxide powder target, and the deposition parameters including O2/(Ar+O2) ratio, gas pressure and r.f. Power were carefully optimized. Thousands of zinc oxide thin film transistors with staggered-type or inverse staggered-type stack and various W/L ratios were fabricated and electrically characterized. A better result we achieved with normally-off TFT characteristics presents a saturated mobility of 25.7 cm2/Vs, a threshold voltage of 6.3 V, an on/off current ratio over 7.7×104 an off current less than 7.9×10-10 and a subthreshold slope of 1.2 V/dec. The TFT characteristics results can compete with those for the TFTs manufactured from high-temperature sintered ceramic target reported in literature thus far.
A Pt thin film catalyst was prepared by a novel green method of micro drop dispersion-oxygen plasma etching (MD-OPE) method with Pt(acac)... as starting material and silicon wafer as substrate. The catalytic activity ...
详细信息
A Pt thin film catalyst was prepared by a novel green method of micro drop dispersion-oxygen plasma etching (MD-OPE) method with Pt(acac)... as starting material and silicon wafer as substrate. The catalytic activity of the film catalyst was evaluated by methanol combustion at room temperature, and its surface properties were characterized by SEM and XPS techniques. The results indicated that Pt(acac)... can be decomposed and reduced to PtO and ... with small size by oxygen plasma, which is the reason for the improved catalytic activity of as-prepared Pt film compared with the Pt film catalysts prepared by the micro drop dispersion (MD) method. (ProQuest: ... denotes formulae/symbols omitted.)
暂无评论