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Study into High Temperature Reliability of Isotropic Conductive Adhesive

Study into High Temperature Reliability of Isotropic Conduct...

2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Wenhui Du Huiwang Cui Si Chen Zhichao Yuan Lilei Ye Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S Shangda Rui Hu Microsystem Integration Technology Co.Ltd Room 101 Science &Technology Building Sh Smart High Tech AB Fysikgrand 3 41296 Gothenburg SWEDEN Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S

With the rapid development of technologies for high density assembly and packaging in electronic industry, isotropic conductive adhesive (ICA) has been paid more and more attention as a potential substitute for solder, due to its advantages of low processing temperature, simple processing conditions and good manufacturability. However, studies into the reliability of ICA are not as abundant as those of solder. As a composite material, the failure feasibility of ICA not only depends not only on the variation in performance of different constituent parts, such as high temperature aging of the polymer, aging due to moisture absorption and oxidization of filler particles, but also on interface changes. Thus, the failure mechanism of ICA seems to be complicated and studies into the reliability of ICA are also necessary. Reliability in humidity and heat has been investigated in previous works, and in this paper high temperature reliability will be studied as a comparison. Some reliability tests and results will be given and some failure mechanisms discussed. Finally, we present some discussion about the further optimization of reliability for follow-up studies.

关键词： Aging Reliability Conductivity Conductive adhesives Materials Packaging Temperature

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Surface,Size and Thermal Effects in Alkali Metal with Core-Electron Binding-Energy Shifts

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Chinese Journal of Chemical Physics 2021年第5期34卷 628-638,I0003,I0004页

作者： Wen-huan Zhu Zhong-kai Huang Mao-lin Bo Jin Huang Cheng Peng Hai Liu National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China Key Laboratory of Inorganic Special Functional Materials of Chongqing Yangtze Nromal UniversityChongqing 408100China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing Yangtze Normal UniversityChongqing 408100China School of Chemistry and Chemical Engineering Southwest UniversityChongqing 400715China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Consistency between density functional theory calculations and X-ray photoelectron spectroscopy measurements confirms our predications on the undercoordination-induced local bond relaxation and core level shift of alkali metal,which determine the surface,size and thermal properties of ***-resolved photoelectron spectroscopyanalysis method and bond order-length-strength theory can be utilized to quantify the physical parameters regarding bonding identities and electronic property of metal surfaces,which allows for the study of the core-electron binding-energy shifts in alkali *** employing these methods and first principle calculation in this work,we can obtain the information of bond and atomic cohesive energy of under-coordinated atoms at the alkali metal *** addition,the effect of size and temperature towards the binding-energy in the surface region can be seen from the view point of Hamiltonian perturbation by atomic relaxation with atomic bonding.

关键词： Alkali metal First principle calculation Metal surface Binding-energy Size effect Thermal effect

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Effects of Die-attach Materials on the Optical Durability and Thermal Performances of HP-LED

Effects of Die-attach Materials on the Optical Durability an...

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2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Luqiao Yin Lianqiao Yang Weiqiao Yang Guangming Xu Huafeng Yan Yu Chen Shuzhi Li Jianhua Zhang Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Educat Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Educat Shanghai Yaming Lighting co. Ltd.P.O.B 143 149 Yanchang Rd. Shanghai University Shanghai 200072 Shanghai Research Center of Engineering and Technology for Semiconductor Lighting Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Educat

Die interconnection layer is one of the main factors to improve the HP-LED thermal issue as it is the main thermal transfer media from the HP-LED chip to the substrate or heat sink. Silver epoxy is now widely used for LED interconnection, but it becomes more and more difficult for efficient heat dissipation as the HP-LED electric power density becomes higher and higher. Nowadays more and more attentions have been moved to metallic eutectic interconnection, especially for solder paste and AuSn20 eutectic interconnection which have big potential to be used for HP-LED. In order to further understand the thermal characteristics and reliability of HP-LED interconnected by different die-attach materials, the AuSn20 eutectic, solder paste and silver epoxy were applied to HP-LED respectively. The transient thermal resistance, steady state junction temperature and optical durability of the HP-LEDs are tested and studied. For HP-LED interconnected by AuSn20 eutectic, solder paste and silver epoxy, when applied 450 mA working current, the transient thermal resistance of die attach layer are 2.5 K/W, 3.2 K/W and 4 K/W respectively, and the junction temperature variation are 0.4%, 9.6% and 6.6% respectively after about 1180 hours 85 ℃/85 H aging. The results show the AuSn20 eutectic has better thermal performances and optical durability than the solder paste and silver epoxy.

关键词： Thermal resistance Microassembly Materials Silver Junctions Transient analysis

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systematic studies on fractal scan model for Flat Panel display (FPD) controllers

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International Journal of Manufacturing Research 2011年第4期6卷 367-379页

作者： Xu, M. Ran, F. Chen, Z. School of Mechatronical Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai 200072 China Microelectronic Research and Development Centre Shanghai University Shanghai 200072 China

This paper presents the design and logic implementation of the fractal scan algorithm based on the mathematical model of the optimal scan architecture. Through the exploration of the sub-space code sequences and bit code sequences for different grey levels, we deduce the general formulae for the sequences and propose the corresponding logic implementations including the fractal scanning IP core and the general grey-level controller for Flat Panel display (FPD). The parameterised IP core for various grey levels, embedded in FPD scan controller, can efficiently increase the scan utilisation and imaging quality. This research provides a new engineering way to solve a pressing problem of high resolution FPD technology. Copyright © 2011 Inderscience Enterprises Ltd.

关键词： Controllers

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Salient object extraction based on nonparametric kernel density estimation

Salient object extraction based on nonparametric kernel dens...

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2007 IET Conference on Wireless, Mobile and Sensor Networks (CCWMSN07)

作者： Weiwei Li Zhi Liu Zhongmin Han Jiandong Gu Zhaoyang Zhang School of Communication and Information Engineering Shanghai University China Key Laboratory of Advanced Display and System Applicatio Shanghai University China

A major problem in content-based image retrieve (CBIR) is how to extract the perceptually salient object in an image. In this paper, we propose an efficient approach for automatic extracting the salient objects. First, an input image is segmented into homogeneous regions based on nonparametric kernel density estimation (NKDE), and then different features representing colour, texture and spatial position for individual region and adjacent region are extracted. By calculating the object important index (Oil), salient objects are adaptively extracted according to the defined criteria. Experimental results demonstrate the excellent extraction performance of the proposed approach.

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Design of SSCMP with Arbiter and Shared Data Memory Interrupt

Design of SSCMP with Arbiter and Shared Data Memory Interrup...

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yueli Hu Ying Liu Wenyi Jing Microelectronic Research & Development Center Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

In the machine vision system, a common and effective way to solve high complexity and huge throughput of image processing arithmetic computation is to adopt instruction-level-parallel scheme through multiple MCUs with the single-threading architecture. Based on it, this paper proposed a kind of symmetric single-chip multiprocessor (SSCMP) architecture, which composed of four subprocessors and one solution for on-chip arbiter and shared data memory interrupt (SDMI). Each subprocessor could work in cooperant and also was completely independent mode. What's more, the proposed architecture set up a shared space for command transfering and data exchanging. An arbiter judgment scheme and effective interrupt access mechanism were introduced to reduce the burden of data exchange and eliminate competitions between the subprocessors.

关键词： Signal processing Hardware Machine vision Image processing Computer architecture Process control Costs Registers Microelectronics Laboratories

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A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts

A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Kailin Ren Yuan An Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.

关键词： HEMTs Logic gates Power system stability Threshold voltage Stability analysis Wide band gap semiconductors Gate leakage

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Simulation of multi-bit digital delta-sigma modulator

Simulation of multi-bit digital delta-sigma modulator

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Wen-Rong Yang Yuan-Yuan Cheng Jiong-ming Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Microelectronic Research & Development Center Shanghai University Shanghai China

The paper describes a four-order delta-sigma modulation (DSM) with 15 levels quantizer which is used in a 24-bit 44.1-kHz sample-rate audio digital-to-analog converter (DAC). An odd level quantizer has been chosen instead of an even level to reduce quantization noise. The noise transfer function (NTF) is designed to have the zeros optimally in order to increase DR. The peak SNR of the DSM is about 130 dB, which is enough for an audio DAC designed with a 0.35 um CMOS technology.

关键词： Noise Signal to noise ratio Quantization CMOS technology Transfer functions CMOS integrated circuits Converters

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The design of the cache crossbar based on OpenSPRAC architecture

The design of the cache crossbar based on OpenSPRAC architec...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Xi-chuan Wang Bin-feng Qian Microelectronic Research & Development Center Key Laboratory of Advanced Display & System Applications Ministry of Education Shanghai University Shanghai China

Multi-core processor is widely used on the server and desktop computer nowadays. This paper describes the structure of a cache crossbar which used in the multi-core processor SPARC T2. The cores can use the cache crossbar to exchange the data in the L2 cache banks. The multi cores can communicate among each other core by sharing the data in the L2 cache banks. And with the analysis of the CCX, this paper provides a protocol for connecting multi cores and cache banks. The cache crossbar is implemented in SMIC 0.13 mum with design compiler and can run at 200 MHz.

关键词： Magnetic cores Protocols Sun Computer architecture Pipelines Registers Packaging

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Design of On-Chip Debug Module Based on MCU

Design of On-Chip Debug Module Based on MCU

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yue-li Hu Ke-xin Zhang Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education Microelectronic Research and Development Center Shanghai China

A design method of embedded OCD (On-Chip Debugging) based on Intel 8051 MCU architecture is proposed. The OCD module named E-OCD-SFRB (Enhanced OCD module with SFR (Special Function Register) Breakpoint Function) is integrated into an existing MCU core, implementing several debugging function. The method we proposed is able to switch from running mode and debugging mode conveniently by controlling the debugging enable port and also enables controlling the MCU core in debugging mode by additional SFR. The function of SFR breakpoint is added, so we could trace the particular SFR, this is the reinforcement to the exiting OCD methods. The principles of E-OCD-SFR_B and detailed implemental method and simulation solution based on EDA platform are presented and validated. The simulation result indicates the completely observing and controlling to the core is achieved without any effect to original functions of the system.

关键词： Debugging Switches Clocks Ice system-on-a-chip Embedded system Emulation Monitoring Communication system control Registers

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