检索结果-内蒙古大学图书馆

2008 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP 2008), vol.2

作者： Lili Zhang Wenkai Tao Johan Liu Yan Zhang Zhaonian Cheng Cristina Andersson Yulai Gao Qijie Zhai Key Laboratory of Advanced Display and System Applications & SMIT Center School of Automation and Mechanical Engineering Shanghai University Shanghai China SMIT Center & Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden School of Materials Science and Engineering Shanghai University Shanghai China

This paper investigates a composite solders obtained by adding Sn-3.0Ag-0.5Cu (SAC) nano-particles into conventional eutectic Sn-58Bi solder paste. The microstructure analysis and the measurement of the Vickers microhardness have been carried out. Utilizing the self-developed Consumable-electrode Direct Current Arc (CDCA) technique, the Sn-3.0Ag-0.5Cu nano-particles with an average particle size between 20 and 80nm are prepared. The reinforced lead-free Sn-Bi solder was prepared by thoroughly blending the nanometer-sized SAC particles into the eutectic Sn-Bi solder paste. The SAC reinforced Sn-Bi composite solder paste was printed onto ENIG/Cu metalized substrate and reflowed in a conventional reflow oven. After reflow, the morphology of the as-solidified reinforced composite solder was observed by means of SEM and TEM. The Vickers microhardness measurements indicated that the addition of SAC nano-particles enhances the overall strength of the eutectic solder, and the results agree well with the theory of dispersion strengthening.

关键词： Soldering Microstructure Lead Materials Grain boundaries Nanoparticles Packaging

来源：评论

学校读者我要写书评

暂无评论

Investigation of Low Temperature Amorphous (in X Ga1- X )2o3 Films Modulated by Indium Content for Optimization in Solar-Blind Photodetector

SSRN

引用

SSRN 2024年

作者： Wang, Chen Zhang, Yu-Chao Fan, Teng-Min Yi, Cong Zhou, Chen-Hao Kang, Pin-Chun Wu, Wan-Yu Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China Department of Materials Science and Engineering National United University Miaoli360302 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

In this study, bandgap engineering of amorphous (InxGa1-x)2O3 alloy films fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0% to 50% have been investigated. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal-semiconductor-metal solar-blind photodetectors have been explored in detail. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In-rich (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance using a balanced indium content of 20% with an extremely low dark current of 4.4×10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5×104 and a short rise/decay time of 0.33 s/0.54 s. © 2024, The Authors. All rights reserved.

关键词： Temperature

来源：评论

学校读者我要写书评

暂无评论

Investigation of amorphous (InxGa1-x)2O3 alloy films modulated by indium content for optimization in solar-blind photodetector

SSRN

引用

SSRN 2024年

Bandgap engineering using (InxGa1-x)2O3 alloy structure can be a promising technique towards enhancing the performance of solar-blind photodetectors due to its tunable optical and electronic properties. In this study, amorphous (InxGa1-x)2O3 alloy films have been fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0% to 50%. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal-semiconductor-metal solar-blind photodetectors have been explored in detail. As the increase of indium content, the narrowing bandgap may be contributed to the lower forbidden gap of In2O3 and the lattice disorder induced by the corporation of In into the films. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In-rich (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance as balanced indium content rising to 20% with an extremely low dark current of 4.4×10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5×104 and a short rise/decay time of 0.33 s/0.54 s. © 2024, The Authors. All rights reserved.

关键词： Photons

来源：评论

学校读者我要写书评

暂无评论

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

引用

Journal of Physics: Conference Series 2009年第1期188卷

作者： Shufang Wang Xifeng Li Jianhua Zhang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai 200072 China Corresponding author

Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of RRMS measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 °C. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ωcm at 350 °C. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1s-1.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Deep-Blue Electroluminescence of Perovskites with Reduced Dimensionality Achieved by Manipulating Adsorption-Energy Differences

引用

Angewandte Chemie 2022年第40期134卷

作者： Dr. Jianchao Dong Dr. Feifei Lu Dr. Dongyuan Han Dr. Jie Wang Dr. Ziang Zang Dr. Lingmei Kong Dr. Yu Zhang Dr. Xue Ma Dr. Jianheng Zhou Dr. Huiyu Ji Prof. Xuyong Yang Prof. Ning Wang Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China

The lagging development of deep-blue perovskite light-emitting diodes (PeLEDs) heavily impedes their practical applications in full-color display due to the absence of spectrally stable emitters and the mismatch of carrier injection capacity. Herein, we report highly efficient deep-blue PeLEDs through a new chemical strategy that addresses the dilemma for simultaneously constant electroluminescence (EL) spectra and high-purify phase in reduced-dimensional perovskites. The success lies in the control of adsorption-energy differences between phenylbutylamine (PBA) and ethylamine (EA) interacting with perovskites, which facilitates narrow n -value distribution. This approach leads to an increased exciton binding energy and enhanced surface potential, hence improving radiative recombination. As a result, an external quantum efficiency of 4.62 % is achieved in PeLEDs with a stable EL peak at 457 nm, demonstrating the best reported result for deep-blue PeLEDs so far.

关键词： Adsorption Energy Deep-Blue Emission Perovskites Reduced Dimensionality

来源：评论

学校读者我要写书评

暂无评论

Real-time imaging of accelerated solid-liquid-gas reactions with nanobubbles

Research Square

引用

Research Square 2020年

作者： Wang, Wen Xu, Tao Chen, Jige Shangguan, Junyi Dong, Hui Ma, Huishu Zhang, Qiubo Bai, Tingting Guo, Zhirui Fang, Haiping Zheng, Haimei Sun, Litao SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of Education Collaborative Innovation Center for Micro/Nano Fabrication Device and System Southeast University Nanjing210096 China Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Shanghai Synchrotron Radiation Facility Zhangjiang Laboratory Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai201204 China Department of Physics East China University of Science and Technology Shanghai200237 China Department of Materials Science and Engineering University of California BerkeleyCA94720 United States Shanghai Institute of Applied Physics Chinese Academy of Sciences Shanghai201800 China Key Laboratory of Welding Robot and Application Technology of Hunan Province Engineering Research Center of Complex Tracks Processing Technology Equipment of Ministry of Education Xiangtan University Xiangtan411105 China The Second Affiliated Hospital Key Laboratory for Aging & Disease Nanjing Medical University Nanjing210011 China

Solid-liquid-gas reactions are ubiquitous. An understanding of how gases influence the reactions at the nanoscale is significant for achieving the enhanced triple-phase reactions. Here, we report a real-time observation of the accelerated etching of gold nanorods with oxygen nanobubbles in aqueous hydrobromic acid using liquid cell transmission electron microscopy (TEM). Our observation reveals that when an oxygen nanobubble is close to a nanorod below the critical distance (~1nm), the local etching rate is significantly enhanced with over an order of magnitude faster. Molecular dynamics simulations results show that the strong attractive van der Waals interaction between the gold nanorod and oxygen molecules facilitates the transport of oxygen through the thin liquid layer to the gold surface and thus plays a crucial role in increasing the etching rate. This result sheds light on the rational design of solid-liquid-gas reactions for enhanced activities. © 2020, CC BY.

关键词： Molecular dynamics

来源：评论

学校读者我要写书评

暂无评论

Flip Chip Assembly Using Carbon Nanotube Bumps and Anisotropic Conductive Adhesive Film

引用

ECS Transactions 2010年第1期27卷

作者： Xia Zhang Teng Wang Pär Berggren Si Chen Johan Liu Shanghai University Chalmers University of Technology SHT Smart High-Tech AB SMIT Ltd Key Laboratory of Advanced Display and System Applications Ministry of Education & SMIT Center Shanghai University Shanghai China

Carbon Nanotube (CNT) has been proposed as a promising candidate material to build next generation flip chip interconnects in electronics. In this paper, flip chip assembly using CNT bumps and ACF is performed. To realize CNT-based interconnects, post-growth processes including deposition of metallic layers on CNT bundles and low temperature transfer of CNT bundles have been developed to overcome the problems of the high growth temperature of CNT as well as the poor adhesion between CNT bumps and substrates. Moreover, ACF has been used to assemble the CNT bumps on another Si substrate. The electrical test is performed also to verify the good contact between CNT bumps and ACF.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Light-Emitting Diodes: Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes (Small 15/2018)

引用

Small 2018年第15期14卷

作者： Haoran Wang Xiaomin Li Mingjian Yuan Xuyong Yang Key Laboratory of Advanced Display and System Applications of Education of Ministry Shanghai University 149 Yanchang Road Shanghai 200072 China College of Chemistry Nankai University 94 Weijin Road Tianjin 300071 China

来源：评论

学校读者我要写书评

暂无评论

Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

引用

Solar Energy Materials and Solar Cells 2023年第1期257卷

作者： Zhang, Xiao-Ying Han, Jing Wang, Yao-Tian Ruan, Yu-Jiao Wu, Wan-Yu Wuu, Dong-Sing Zuo, Juan Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China Department of Materials Science and Engineering National United University Miaoli36063 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan School of Materials Science and Engineering Xiamen University of Technology Xiamen361024 China Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

Hafnium oxide (HfO2) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N2) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Qf) and density of interface traps (Dit) between HfO2 and c-Si were extracted. Qf and Dit reveal the potential of HfO2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO2 thin films are systematically studied. The results show that N2-annealed sample possesses the highest Qf of 1.73 × 1012 cm−2 and therefore provides the best field effect passivation. Air-annealed sample has lowest Dit of 1.0 × 1012 eV−1cm−2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 1015 cm−3, which means that good passivation was obtained for N-type Si wafer passivated with HfO2 after annealing in Air. © 2023 Elsevier B.V.

关键词： Annealing

来源：评论

学校读者我要写书评

暂无评论

Impact of Thickness in Ultra-Thin Ald-Processed HfO2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

SSRN

引用

SSRN 2024年

作者： Chen, Minyu Chen, Huimin Solano, Eduardo Merino, Danile Hermida Hua, Wenqiang Ding, Xingwei Wei, Bin Liao, Yingjie Wu, Bing Microelectronic R&D Center School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie Troyes10004 Cedex France NCD-SWEET beamline ALBA Synchrotron Cerdanyola del Vallès Barcelona08290 Spain Shanghai Advanced Research Institute Chinese Academy of Sciences 201210 China 71 Avenue Des Martyrs CS 40220 Grenoble38043 France Magnetic Resonance Research Center Institute for Molecules and Materials Radboud University Nijmegen Netherlands

The effective reduction in the thickness of the metal gate while retaining its defect-free morphology and high dielectric properties is of great interest for producing low-power-consumption and high-performance thin film transistors (TFTs). In this study, a series of ultrathin hafnium dioxide (HfO2) coating layer with different thickness were prepared by atomic layer deposition (ALD) as TFT dielectrics. In XPS analyses, it was observed that the ratio of HfOx to HfO2 decreases with the increasing thickness of the HfO2 layer. Concurrently, the ratio of O species outside HfO2 also decreases as the thickness of the HfO2 layer increases. These HfO2 films were further examined by grazing incidence small and wide-angle x-ray scattering (GISAXS/GIWAXS), atomic force microscope (AFM) and X-ray to understand the impact of these films’ thickness on their morphological and topological properties. Afterwards, the dielectric properties of all these films were analyzed by the impedance measurement, it was found that the optimized 10 nm HfO2 thin film can exhibit a low-leakage current density of 13 nA cm−2 at 1 V and a permittivity of 5.98. Finally, the as-fabricated ZnO TFT with a 10 nm HfO2 gate dielectric layer was found to be able to operate at an ultra-low voltage of -1.59 V with a very high current on/off ratio, which is larger than 106. This result demonstrates the critical importance in controlling the thickness of dielectric layer to achieving high-performance TFTs and its profound potential in the applications of low-power consumption microelectronics. © 2024, The Authors. All rights reserved.

关键词： Thin films

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：