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Band Structure Engineering of Black Phosphorus/Graphene/MoS2 van der Waals Heterojunctions for Photovoltaic and Optoelectronic Device application

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Journal of Physics: Conference Series 2021年第2期1865卷

作者： Wenhuan Zhu Lingwei Kong Wei Long Xianglei Shi Dayong Zhou Lijie Sun Lihua Zhou Guiting Yang Xiaodong Liu Hai Liu Maolin Bo Xiaoqiang Hou Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai China State Grid Nanchong Power Supply Company Nanchong China State Key Laboratory of Space Power-Sources Technology Shanghai China Shanghai Institute of Space Power-Sources Shanghai China Guizhou Space Appliance Co. Ltd. Guizhou China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing Yangtze Normal University Chongqing China

In this paper, we study the band structure engineering of black phosphorus/graphene/MoS2 (BP/graphene/MoS2) van der Waals heterojunctions based on ab initio simulations. The density of state and charge density of BP/MoS2, bilayer-BP/MoS2, bilayer-BP/graphene/MoS2 and graphene/bilayer-BP/MoS2 heterojunctions are also investigated. It is found that the bandgaps of these four heterojunctions are smaller than the case of single layer BP or MoS2. When graphene is inserted into or stacked upon BP and MoS2 layers, the heterojunction can obtain a minimum bandgap and a higher density of state distribution. In the differential charge density diagram, electrons over the carbon, sulfur and phosphorus atoms are lost from those corresponding parts. These investigations based on the band structure engineering of 2D van der Waals heterojunctions can provide an effective guidance to manufacture the future nanoscale high performance photovoltaic and optoelectronic devices.

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Study on the Reliability of Fast Curing Isotropic Conductive Adhesive

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ECS Transactions 2011年第1期34卷

作者： Wenhui Du Huiwang Cui Si Chen Zhichao Yuan Lilei Ye Johan Liu Key Laboratory of Advanced Display and System Applications Shanghai University No.149 Yangchang Road Shanghai Shanghai 200072 China Ministry of Education and SMIT Center Shanghai University Shang Da Rui Hu Microsystem Integration Technology Co.Ltd Shanghai University SHT Smart High Tech AB Shanghai University

With the development of semiconductor technology, electronic packaging technology with increasingly high integration density is needed. Solder is a traditional interconnect material widely used in electronic packaging industry, but now more attention is being paid to isotropic conductive adhesive (ICA) as an environmentally friendly interconnect material with advantages of low processing temperature, simple processing conditions and good manufacturability. However, compared with solder, reliability studies of ICA are still scarce. This paper aims to enrich the reliability study of ICA, by studying the reliability of a novel fast curing ICA which has a curing degree of 97.8% with 3 min of curing time at 150 °. It was found that after 85 °/85% RH humidity and heat test for 160 h, the bulk resistivity of ICA decreased about 82% and then remained stable. Besides, ICA embrittled as aging time extending.

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Publisher Correction: Fabrication of red-emitting perovskite LEDs by stabilizing their octahedral structure

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Nature 2024年第8020期631卷 E10页

作者： Lingmei Kong Yuqi Sun Bin Zhao Kangyu Ji Jie Feng Jianchao Dong Yuanzhi Wang Zirui Liu Shabnum Maqbool Yunguo Li Yingguo Yang Linjie Dai Wanhee Lee Changsoon Cho Samuel D Stranks Richard H Friend Ning Wang Neil C Greenham Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. Cavendish Laboratory University of Cambridge Cambridge UK. College of Physics Jilin University Changchun China. Department of Chemical Engineering and Biotechnology University of Cambridge Cambridge UK. CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space Sciences University of Science and Technology of China Hefei China. Shanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China. School of Microelectronics Fudan University Shanghai China. Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea. Institute for Convergence Research and Education in Advanced Technology Yonsei University Seoul Republic of Korea. College of Physics Jilin University Changchun China. ningwang@***. Cavendish Laboratory University of Cambridge Cambridge UK. ncg11@cam.ac.uk. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. yangxy@***. Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai China. yangxy@***.

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COMPUTER-system ARCHITECTURE CONCEPTS FOR FUTURE COMBAT systemS

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NAVAL ENGINEERS JOURNAL 1990年第3期102卷 43-62页

作者： ZITZMAN, LH FALATKO, SM PAPACH, JL Dr. Lewis H. Zitzman:is the group supervisor of the Advanced Systems Design Group Fleet Systems Department The Johns Hopkins University Applied Physics Laboratory (JHU/APL). He has been employed at JHU/APL since 1972 performing applied research in computer science and in investigating and applying advanced computer technologies to Navy shipboard systems. He is currently chairman of Aegis Computer Architecture Data Bus and Fiber Optics Working Group from which many concepts for this paper were generated. Dr. Zitzman received his B.S. degree in physics from Brigham Young University in 1963 and his M.S. and Ph.D. degrees in physics from the University of Illinois in 1967 and 1972 respectively. Stephen M. Falatko:was a senior engineering analyst in the Combat Systems Engineering Department Comptek Research Incorporated for the majority of this effort. He is currently employed at ManTech Services Corporation. During his eight-year career first at The Johns Hopkins University Applied Physics Laboratory and currently with ManTech Mr. Falatko's work has centered around the development of requirements and specifications for future Navy systems and the application of advanced technology to Navy command and control systems. He is a member of both the Computer Architecture Fiber Optics and Data Bus Working Group and the Aegis Fiber Optics Working Group. Mr. Falatko received his B.S. degree in aerospace engineering with high distinction from the University of Virginia in 1982 and his M.S. degree in applied physics from The Johns Hopkins University in 1985. Mr. Falatko is a member of Tau Beta Pi Sigma Gamma Tau the American Society of Naval Engineers and the U.S. Naval Institute. Janet L. Papach:is a section leader and senior engineering analyst in the Combat Systems Engineering Department Comptek Research Incorporated. She has ten years' experience as an analyst supporting NavSea Spa War and the U.S. Department of State. She currently participates in working group efforts under Aegis Combat System Doctrin

This paper sets forth computer systems architecture concepts for the combat system of the 2010-2030 timeframe that satisfy the needs of the next generation of surface combatants. It builds upon the current Aegis computer systems architecture, expanding that architecture while preserving, and adhering to, the Aegis fundamental principle of thorough systems engineering, dedicated to maintaining a well integrated, highly reliable, and easily operable combat system. The implementation of these proposed computer systems concepts in a coherent architecture would support the future battle force capable combat system and allow the expansion necessary to accommodate evolutionary changes in both the threat environment and the technology then available to effectively counter that threat. Changes to the current Aegis computer architecture must be carefully and effectively managed such that the fleet will retain its combat readiness capability at all times. This paper describes a possible transition approach for evolving the current Aegis computer architecture to a general architecture for the future. The proposed computer systems architecture concepts encompass the use of combinations of physically distributed, microprocessorbased computers, collocated with the equipment they support or embedded within the equipment itself. They draw heavily on widely used and available industry standards, including instruction set architectures (ISAs), backplane busses, microprocessors, computer programming languages and development environments, and local area networks (LANs). In this proposal, LANs, based on fiber optics, will provide the interconnection to support system expandability, redundancy, and higher data throughput rates. A system of cross connected LANs will support a high level of combat system integration, spanning the major warfare areas, and will facilitate the coordination and development of a coherent multiwarfare tactical picture supporting the future combatant command staf

关键词： Computer Architecture

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Correction to: A method of VR‑EEG scene cognitive rehabilitation training

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Health information science and systems 2021年第1期9卷 7页

作者： Wenjun Tan Yang Xu Pan Liu Chunyan Liu Yujin Li Yanrui Du Chao Chen Yuping Wang Yanchun Zhang Key Laboratory of Intelligent Computing in Medical Image Ministry of Education Northeastern University Shenyang 110189 China. Cyberspace Institute of Advanced Technology Guangzhou University Guangzhou 510006 China. Department of Neurology Xuanwu Hospital Capital Medical University Beijing 100053 China. Key Laboratory of Complex System Control Theory and Application Tianjin University of Technology Tianjin 300384 China. Institute for Sustainable Industries and Liveable Cities Victoria University Melbourne VIC 8001 Australia.

[This corrects the article DOI: 10.1007/s13755-020-00132-6.].

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Superior Performance of ZnGaO Solar-Blind Photodetectors by Implementing TFT Structure and Tunable ZNO Cycle Ratio

SSRN

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SSRN 2024年

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Tingzhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China School of Ocean Information Engineering Jimei University Jimei District Fujian Xiamen361021 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0% to 50%, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga2O3, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40%, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ~4.5×10-13 A, an excellent light switching ratio ~2.2×107, and an outstandingly high sensitivity ~34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga2O3 TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024, The Authors. All rights reserved.

关键词： Zinc oxide

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Hybrid plasmonic nano-emitters with controlled single quantum emitter positioning on the local excitation field

arXiv

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arXiv 2020年

作者： Ge, Dandan Marguet, Sylvie Issa, Ali Jradi, Safi Nguyen, Tien Hoa Nahra, Mackrine Béal, Jéremie Deturche, Régis Chen, Hongshi Blaize, Sylvain Plain, Jérôme Fiorini, Céline Douillard, Ludovic Soppera, Olivier Dinh, Xuan Quyen Dang, Cuong Yang, Xuyong Xu, Tao Wei, Bin Sun, Xiao Wei Couteau, Christophe Bachelot, Renaud Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie Troyes CedexF-10004 France Shenzhen Planck Innovation Technologies Co. Ltd Shenzhen China Université Paris Saclay CEA CNRS NIMBE Gif sur YvetteF-91191 France 50 Nanyang Drive Singapore637553 Singapore Université Paris Saclay CEA CNRS SPEC Gif sur YvetteF-91191 France Université de Haute Alsace CNRS IS2M UMR 7361 MulhouseF-68100 France Université de Strasbourg France Thales Solutions Asia Pte Ltd R&T Department 21 Changi North Rise Singapore498788 Singapore School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore639798 Singapore School of Mechatronic Engineering and Automation Key lab of advanced display and system application Ministry of Education Shanghai University Shanghai2000072 China Sino-European School of Technology Shanghai University Shanghai China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen Guangdong518055 China

Hybrid plasmonic nanoemitters based on the combination of quantum dot emitters (QD) and plasmonic nanoantennas open up new perspectives in the control of light. However, precise positioning of any active medium at the nanoscale constitutes a challenge. Here, we report on the optimal overlap of antenna’s near-field and active medium whose spatial distribution is controlled via a plasmon-triggered 2-photon polymerization of a photosensitive formulation containing QDs. Au nanoparticles of various geometries are considered. The response of these hybrid nano-emitters is shown to be highly sensitive to the light polarization. Different light emission states are evidenced by photoluminescence measurements. These states correspond to polarization-sensitive nanoscale overlap between the exciting local field and the active medium distribution. The decrease of the QD concentration within the monomer formulation allows trapping of a single quantum dot in the vicinity of the Au particle. The latter objects show polarization-dependent switching in the single-photon regime. Copyright © 2020, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

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I3−/I−Redox Reaction-mediated Organic Zinc-Air Batteries with Accelerated Kinetics and Long Shelf Lives

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Angewandte Chemie 2023年第26期135卷

作者： Mangwei Cui Ninggui Ma Hao Lei Youfa Liu Wei Ling Sheng Chen Jiaqi Wang Prof. Hongfei Li Zhaohui Li Prof. Jun Fan Prof. Yan Huang State Key Laboratory of Advanced Welding and Joining Sauvage Laboratory for Smart Materials Shenzhen Key Laboratory of Flexible Printed Electronics Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China Department of Materials Science and Engineering City University of Hong Kong 83 Tat Chee Avenue Kowloon Hong Kong 999077 China Key Laboratory of Radiation Physics and Technology of Ministry of Education Institute of Nuclear Science and Technology Sichuan University Chengdu 610064 China School of System Design and Intelligent Manufacturing Southern University of Science and Technology Shenzhen 518055 China Songshan Lake Materials Laboratory Dongguan 523808 China Shenzhen China Star Optoelectronic Semiconductor Display Technology Co. Ltd. Shenzhen 518055 China

The storage time of Zn-air batteries (ZABs) for practical implementation have been neglected long-lastingly. ZABs based on organic solvents promise long shelf lives but suffer from sluggish kinetics. Here, we report a longly storable ZAB with accelerated kinetics mediated by I 3 − /I − redox. In the charge process, the electrooxidation of Zn 5 (OH) 8 Cl 2 ⋅H 2 O is accelerated by I 3 − chemical oxidation. In the discharge process, I − adsorbed on the electrocatalyst changes the energy level of oxygen reduction reaction (ORR). Benefitting from these advantages, the prepared ZAB shows remarkably improved round-trip efficiency (56.03 % vs. 30.97 % without the mediator), and long-term cycling time (>2600 h) in ambient air without replacing any components or applying any protective treatment to Zn anode and electrocatalyst. After resting for 30 days without any protection, it can still directly discharge continuously for 32.5 h and charge/discharge very stably for 2200 h (440 cycles), which is evidently superior to aqueous ZABs (only 0/0.25 h, and 50/25 h (10/5 cycles) by mild/alkaline electrolyte replenishment). This study provides a strategy to solve both storage and sluggish kinetics issues that have been plaguing ZABs for centuries, opening up a new avenue to the industrial application of ZABs.

关键词： Iodine-Containing Reaction Kinetics Redox Mediators Storage Time Zn-Air Batteries

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A Highly Conductive Bimodal Isotropic Conductive Adhesive and Its Reliability

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ECS Transactions 2011年第1期34卷

作者： Dongsheng Li Huiwang Cui Si Chen Qiong Fan Zhichao Yuan Lilei Ye Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center Shanghai University No.149 Yanchang Road Shanghai Shanghai 200072 China Ministry of Education and SMIT Center Shanghai University Shang Da Rui Hu Microsystem Integration Technology Co.Ltd Shanghai University SHT Smart High Tech AB Shanghai University SE-412 96 Gothenburg Gothenburg 41296 Sweden

In this paper, micro silver flakes and micro spherical particles were incorporated into the matrix resin of isotropic conductive adhesives (ICAs). Their electrical properties were investigated. The total weight ratio of silver fillers was kept at 75 wt% for all samples. When the content of micro spherical particles was 8 wt%, the bulk resistivity of the bimodal ICAs reduced dramatically to as low as 1.26×10-4 Ω•cm and its viscosity was 24,289 cP under 5rpm at 25°. Scanning electronic microscopy (SEM) images of the bimodal ICAs showed silver fillers well distributed in the matrix resin. In addition, the lap shear strength of different metal surfaces, and the bulk resistivity shifts during aging time under85°/85% RH for more than 500 hours were also measured. The results showed that bulk resistivity shifts of bimodal ICAs remained stable after further cured and the bond strength on the copper surface was the greatest among the three metal surfaces tested.

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Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio

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Materials Today Chemistry 2024年 38卷

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Ting-Zhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China School of Ocean Information Engineering Jimei University Jimei District Xiamen 361021 Fujian China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen 361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen 361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou 54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua 51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0 % to 50 %, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga₂O₃, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40 %, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ∼4.5 × 10⁻¹³ A, an excellent light switching ratio ∼2.2 × 10⁷, and an outstandingly high sensitivity ∼34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga₂O₃ TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024 Elsevier Ltd

关键词： High performance Plasma enhanced atomic layer deposition TFT-Type solar-blind photodetector ZnGaO film ZnO cycle ratio

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