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I3−/I−Redox Reaction-mediated Organic Zinc-Air Batteries with Accelerated Kinetics and Long Shelf Lives

Angewandte Chemie 2023年第26期135卷

作者： Mangwei Cui Ninggui Ma Hao Lei Youfa Liu Wei Ling Sheng Chen Jiaqi Wang Prof. Hongfei Li Zhaohui Li Prof. Jun Fan Prof. Yan Huang State Key Laboratory of Advanced Welding and Joining Sauvage Laboratory for Smart Materials Shenzhen Key Laboratory of Flexible Printed Electronics Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen) Shenzhen 518055 China Department of Materials Science and Engineering City University of Hong Kong 83 Tat Chee Avenue Kowloon Hong Kong 999077 China Key Laboratory of Radiation Physics and Technology of Ministry of Education Institute of Nuclear Science and Technology Sichuan University Chengdu 610064 China School of System Design and Intelligent Manufacturing Southern University of Science and Technology Shenzhen 518055 China Songshan Lake Materials Laboratory Dongguan 523808 China Shenzhen China Star Optoelectronic Semiconductor Display Technology Co. Ltd. Shenzhen 518055 China

The storage time of Zn-air batteries (ZABs) for practical implementation have been neglected long-lastingly. ZABs based on organic solvents promise long shelf lives but suffer from sluggish kinetics. Here, we report a longly storable ZAB with accelerated kinetics mediated by I 3 − /I − redox. In the charge process, the electrooxidation of Zn 5 (OH) 8 Cl 2 ⋅H 2 O is accelerated by I 3 − chemical oxidation. In the discharge process, I − adsorbed on the electrocatalyst changes the energy level of oxygen reduction reaction (ORR). Benefitting from these advantages, the prepared ZAB shows remarkably improved round-trip efficiency (56.03 % vs. 30.97 % without the mediator), and long-term cycling time (>2600 h) in ambient air without replacing any components or applying any protective treatment to Zn anode and electrocatalyst. After resting for 30 days without any protection, it can still directly discharge continuously for 32.5 h and charge/discharge very stably for 2200 h (440 cycles), which is evidently superior to aqueous ZABs (only 0/0.25 h, and 50/25 h (10/5 cycles) by mild/alkaline electrolyte replenishment). This study provides a strategy to solve both storage and sluggish kinetics issues that have been plaguing ZABs for centuries, opening up a new avenue to the industrial application of ZABs.

关键词： Iodine-Containing Reaction Kinetics Redox Mediators Storage Time Zn-Air Batteries

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A Highly Conductive Bimodal Isotropic Conductive Adhesive and Its Reliability

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ECS Transactions 2011年第1期34卷

作者： Dongsheng Li Huiwang Cui Si Chen Qiong Fan Zhichao Yuan Lilei Ye Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center Shanghai University No.149 Yanchang Road Shanghai Shanghai 200072 China Ministry of Education and SMIT Center Shanghai University Shang Da Rui Hu Microsystem Integration Technology Co.Ltd Shanghai University SHT Smart High Tech AB Shanghai University SE-412 96 Gothenburg Gothenburg 41296 Sweden

In this paper, micro silver flakes and micro spherical particles were incorporated into the matrix resin of isotropic conductive adhesives (ICAs). Their electrical properties were investigated. The total weight ratio of silver fillers was kept at 75 wt% for all samples. When the content of micro spherical particles was 8 wt%, the bulk resistivity of the bimodal ICAs reduced dramatically to as low as 1.26×10-4 Ω•cm and its viscosity was 24,289 cP under 5rpm at 25°. Scanning electronic microscopy (SEM) images of the bimodal ICAs showed silver fillers well distributed in the matrix resin. In addition, the lap shear strength of different metal surfaces, and the bulk resistivity shifts during aging time under85°/85% RH for more than 500 hours were also measured. The results showed that bulk resistivity shifts of bimodal ICAs remained stable after further cured and the bond strength on the copper surface was the greatest among the three metal surfaces tested.

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Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio

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Materials Today Chemistry 2024年 38卷

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Ting-Zhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China School of Ocean Information Engineering Jimei University Jimei District Xiamen 361021 Fujian China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen 361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen 361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou 54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua 51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0 % to 50 %, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga₂O₃, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40 %, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ∼4.5 × 10⁻¹³ A, an excellent light switching ratio ∼2.2 × 10⁷, and an outstandingly high sensitivity ∼34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga₂O₃ TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024 Elsevier Ltd

关键词： High performance Plasma enhanced atomic layer deposition TFT-Type solar-blind photodetector ZnGaO film ZnO cycle ratio

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Metal Halide Perovskites: Metal Halide Perovskite Nanorods: Shape Matters (Adv. Mater. 46/2020)

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advanced Materials 2020年第46期32卷

作者： Chengxi Zhang Jiayi Chen Sheng Wang Lingmei Kong Simon W. Lewis Xuyong Yang Andrey L. Rogach Guohua Jia Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China Curtin Institute of Functional Molecules and Interfaces School of Molecular and Life Sciences Curtin University GPO Box U1987 Perth WA 6845 Australia Department of Materials Science and Engineering & Centre for Functional Photonics (CFP) City University of Hong Kong Kowloon Hong Kong SAR P. R. China

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Full-color fluorescent carbon quantum dots

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Science advances 2020年第40期6卷 eabb6772页

作者： Liang Wang Weitao Li Luqiao Yin Yijian Liu Huazhang Guo Jiawei Lai Yu Han Gao Li Ming Li Jianhua Zhang Robert Vajtai Pulickel M Ajayan Minghong Wu Institute of Nanochemistry and Nanobiology School of Environmental and Chemical Engineering Shanghai University Shanghai 200444 P. R. China. wangl@*** mhwu@***. Department of Materials Science and NanoEngineering Rice University Houston TX 77005 USA. Institute of Nanochemistry and Nanobiology School of Environmental and Chemical Engineering Shanghai University Shanghai 200444 P. R. China. Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 P. R. China.

Quantum dots have innate advantages as the key component of optoelectronic devices. For white light-emitting diodes (WLEDs), the modulation of the spectrum and color of the device often involves various quantum dots of different emission wavelengths. Here, we fabricate a series of carbon quantum dots (CQDs) through a scalable acid reagent engineering strategy. The growing electron-withdrawing groups on the surface of CQDs that originated from acid reagents boost their photoluminescence wavelength red shift and raise their particle sizes, elucidating the quantum size effect. These CQDs emit bright and remarkably stable full-color fluorescence ranging from blue to red light and even white light. Full-color emissive polymer films and all types of high-color rendering index WLEDs are synthesized by mixing multiple kinds of CQDs in appropriate ratios. The universal electron-donating/withdrawing group engineering approach for synthesizing tunable emissive CQDs will facilitate the progress of carbon-based luminescent materials for manufacturing forward-looking films and devices.

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Fine-Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color-Saturated Green LEDs

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Angewandte Chemie 2024年第26期136卷

作者： Dr. Jianfeng Zhang Dr. Junhui Wang Dr. Lei Cai Dr. Sheng Wang Prof. Kaifeng Wu Prof. Baoquan Sun Prof. Weitao Zheng Dr. Stephen V. Kershaw Prof. Guohua Jia Prof. Xiaoyu Zhang Prof. Andrey L. Rogach Prof. Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 P. R. China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 611731 P. R. China State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 Liaoning P. R. China University of Chinese Academy of Sciences Beijing 100049 P. R. China Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou 215123 P. R. China Key Laboratory of Automobile Materials Ministry of Education College of Materials Science and Engineering Jilin University Changchun 130012 P. R. China Department of Materials Science and Engineering Centre for Functional Photonics (CFP) City University of Hong Kong Hong Kong SAR 999077 P. R. China School of Molecular and Life Science Curtin University Bentley WA 6102 Australia

Decreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade-off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd 2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX 6 ] 4− octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color-saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd 2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n -doped emitters convert into only slightly n -doped ones; this boosts the charge injection efficiency of the corresponding light-emitting diodes. The light-emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A −1 , and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color-saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.

关键词： perovskite nanocrystals light-emitting diode exciton binding energy auger recombination cadmium (II) doping

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COMPUTER-system ARCHITECTURE CONCEPTS FOR FUTURE COMBAT systemS

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NAVAL ENGINEERS JOURNAL 1990年第3期102卷 43-62页

作者： ZITZMAN, LH FALATKO, SM PAPACH, JL Dr. Lewis H. Zitzman:is the group supervisor of the Advanced Systems Design Group Fleet Systems Department The Johns Hopkins University Applied Physics Laboratory (JHU/APL). He has been employed at JHU/APL since 1972 performing applied research in computer science and in investigating and applying advanced computer technologies to Navy shipboard systems. He is currently chairman of Aegis Computer Architecture Data Bus and Fiber Optics Working Group from which many concepts for this paper were generated. Dr. Zitzman received his B.S. degree in physics from Brigham Young University in 1963 and his M.S. and Ph.D. degrees in physics from the University of Illinois in 1967 and 1972 respectively. Stephen M. Falatko:was a senior engineering analyst in the Combat Systems Engineering Department Comptek Research Incorporated for the majority of this effort. He is currently employed at ManTech Services Corporation. During his eight-year career first at The Johns Hopkins University Applied Physics Laboratory and currently with ManTech Mr. Falatko's work has centered around the development of requirements and specifications for future Navy systems and the application of advanced technology to Navy command and control systems. He is a member of both the Computer Architecture Fiber Optics and Data Bus Working Group and the Aegis Fiber Optics Working Group. Mr. Falatko received his B.S. degree in aerospace engineering with high distinction from the University of Virginia in 1982 and his M.S. degree in applied physics from The Johns Hopkins University in 1985. Mr. Falatko is a member of Tau Beta Pi Sigma Gamma Tau the American Society of Naval Engineers and the U.S. Naval Institute. Janet L. Papach:is a section leader and senior engineering analyst in the Combat Systems Engineering Department Comptek Research Incorporated. She has ten years' experience as an analyst supporting NavSea Spa War and the U.S. Department of State. She currently participates in working group efforts under Aegis Combat System Doctrin

This paper sets forth computer systems architecture concepts for the combat system of the 2010–2030 timeframe that satisfy the needs of the next generation of surface combatants. It builds upon the current Aegis computer systems architecture, expanding that architecture while preserving, and adhering to, the Aegis fundamental principle of thorough systems engineering, dedicated to maintaining a well integrated, highly reliable, and easily operable combat system. The implementation of these proposed computer systems concepts in a coherent architecture would support the future battle force capable combat system and allow the expansion necessary to accommodate evolutionary changes in both the threat environment and the technology then available to effectively counter that threat. Changes to the current Aegis computer architecture must be carefully and effectively managed such that the fleet will retain its combat readiness capability at all times. This paper describes a possible transition approach for evolving the current Aegis computer architecture to a general architecture for the future. The proposed computer systems architecture concepts encompass the use of combinations of physically distributed, microprocessor-based computers, collocated with the equipment they support or embedded within the equipment itself. They draw heavily on widely used and available industry standards, including instruction set architectures (ISAs), backplane busses, microprocessors, computer programming languages and development environments, and local area networks (LANs). In this proposal, LANs, based on fiber optics, will provide the interconnection to support system expandability, redundancy, and higher data throughput rates. A system of cross connected LANs will support a high level of combat system integration, spanning the major warfare areas, and will facilitate the coordination and development of a coherent multi-warfare tactical picture supporting the future combatant command st

关键词： Computer Architecture

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Correction: Atomically flat semiconductor nanoplatelets for light-emitting applications

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Chemical Society reviews 2023年第4期52卷 1519页

作者： Bing Bai Chengxi Zhang Yongjiang Dou Lingmei Kong Lin Wang Sheng Wang Jun Li Yi Zhou Long Liu Baiquan Liu Xiaoyu Zhang Ido Hadar Yehonadav Bekenstein Aixiang Wang Zongyou Yin Lyudmila Turyanska Jochen Feldmann Xuyong Yang Guohua Jia Key Lab for Special Functional Materials Ministry of Education National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology School of Materials Science and Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China. yangxy@***. School of Electronics and Information Technology Sun Yat-sen University Guangzhou 510275 China. Key Laboratory of Automobile Materials Ministry of Education College of Materials Science and Engineering Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials Electron Microscopy Center Jilin University Changchun 130012 China. Institute of Chemistry and the Center for Nanoscience and Nanotechnology The Hebrew University of Jerusalem Jerusalem 91904 Israel. Department of Materials Science and Engineering Technion-Israel Institute of Technology Haifa 32000 Israel. School of Chemistry and Chemical Engineering Linyi University Linyi 276005 P. R. China. Research School of Chemistry The Australian National University ACT 2601 Australia. Faculty of Engineering The University of Nottingham Additive Manufacturing Building Jubilee Campus University Park Nottingham NG7 2RD UK. Chair for Photonics and Optoelectronics Nano-Institute Munich and Department of Physics Ludwig-Maximilians-Universität (LMU) Königinstr. 10 Munich 80539 Germany. School of Molecular and Life Sciences Curtin University Perth WA 6102 Australia. guohua.jia@curtin.edu.au.

Correction for 'Atomically flat semiconductor nanoplatelets for light-emitting applications' by Bing Bai , , 2023, , 318-360, https://***/10.1039/D2CS00130F.

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