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Enhancing the response of electrowetting-based liquid lenses with an advanced overload voltage method

Optics Letters 2025年第8期50卷 2739-2742页

作者： Ma, Xiangteng Zhao, Wenfeng Li, Xifeng Zhang, Janhua Key Laboratory of Advanced Display and System Applications Ministry of Education School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Kunshan Xuanrou Optoelectronics Technology Co. Ltd. Suzhou215300 China

Liquid lenses based on electrowetting have a variety of applications in the fields of optics and imaging. A rapid and stable response to the applied driving voltage is crucial for the operation of such devices. This paper proposes an advanced voltage application with three-stage overload driving. This method effectively balances rapid response and stability of the liquid interface, while the conventional two-stage overload driving is associated with considerable oscillation of the liquid interface. Through simulation and experimentation of liquid lenses with different sizes, the three-stage method is identified as an efficient method to reduce the response time of the devices by optimizing the driving voltage and the duration time. © 2025 Optica Publishing Group.

关键词： Optical instrument lenses

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Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 948-951页

作者： Gong, Yingqun Shi, Yuxin Huo, Sitao Wang, Lin Zhang, Xiaofei Kong, Lingmei Wang, Sheng Yang, Yingguo Yang, Xuyong Shanghai University Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200072 China Seoul National University Department of Materials Science and Engineering Seoul08826 Korea Republic of Shanghai Tianma Micro-Electronics Company Ltd. Shanghai110044 China Zhangjiang Laboratory Shanghai200031 China Fudan University School of Microelectronics Shanghai200433 China

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn2+ oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn2+ and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn2+, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI6 octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m−2. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs. © 1980-2012 IEEE.

关键词： Perovskite

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Efficient and Stable Perovskite Light-Emitting Diodes Enabled by Oriented Growth Regulation

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 952-955页

作者： Zhang, Kun Zhang, Xiaofei Zhang, Chengxi Feng, Jie Kong, Lingmei Wang, Sheng Yang, Yingguo Wang, Lin Yang, Xuyong Shanghai University Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai200072 China Jiangsu University of Science and Technology School of Science Zhenjiang212100 China Zhangjiang Lab Shanghai Advanced Research Institute Shanghai China Fudan University School of Microelectronics Shanghai China

Metal halide perovskites have demonstrated remarkable progress in optoelectronic applications, including solar cells and light-emitting diodes (LEDs). However, the long-term stability of perovskite LEDs (PeLEDs) remains a critical challenge, impeding their practical applications and commercialization. Herein, we regulate the growth kinetics of perovskites in liquid-solid stages by introducing 2,3,4,5, 6-pentafluorophenylphosphonic acid (PFBPA) into the precursor solution. The PFBPA molecules will create a protective passivation layer by coordinating with uncoordinated lead (Pb2+) on the perovskite surface, which regulates the growth of perovskite crystals during the liquid-solid stages and results in the formation of uniform perovskite films with reduced grain size. Moreover, the coordination of PFBPA with Pb2+ also improves the moisture resistance of perovskites, favoring the operational stability of devices. The resulting PeLED devices achieved a maximum brightness of 12426 cd m-2, a peak external quantum efficiency (EQE) of 22.6%, and a remarkable operational stability with a half-lifetime exceeding 1187 hours at initial luminance of 100 cd m-2. © 1980-2012 IEEE.

关键词： Perovskite

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Optimizing bendability of flexible electronic devices using a neutral layer strategy

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Moore and More 2025年第1期2卷 1-18页

作者： Wu, Majiaqi Jian, Maoliang Zhang, Jianhua Yang, Lianqiao School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

The neutral layer (NL) strategy is a key technique for improving the bendability of flexible electronic devices. In this study, by considering a three-layer structure as an example, the results obtained by finite element analysis (FEA) showed that the NL gradually moved to the top surface of the film as the film thickness and Young’s modulus increased, which are similar to the results produced by theoretical calculations. Subsequently, we optimized the thickness of a single NL structure and the failure bending radius of an indium tin oxide (ITO) electrode was reduced by 50% after optimization. In order to address the problems that affect the design of a single NL, we used optical clear adhesive (OCA) to generate multiple NLs. The FEA method was again applied to the structure and the results showed that decreasing the elastic modulus of the OCA and film thickness could reduce the maximum strain in the film. Finally, the effects of the OCA parameters on the protection of a multiple-layer ITO electrode structure were verified in bending experiments, which showed that the strain on ITO could be reduced from 5.6% to almost 0 in the two-electrode structure. The proposed strategies for designing single and multiple NLs can provide some guidance to facilitate optimizing the electronic infrastructure of flexible devices.

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An Artificial Olfactory system Based on Synaptic Transistors for Precepting Hazardous Gas to Simulate Organ Injury

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ACS Sensors 2025年 2025 May 14页

作者： Dai, Junshuai Yuan, Li Wei, Yunkuan Zhou, Jixing Xue, Longwei Zhang, Xudong Zhang, Jianhua Chen, Longlong Ding, Xingwei Liu, Hai Zhao, Tingting Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China

Recent advances in artificial olfactory systems have attracted significant attention for their potential applications in humanoid robots and intelligent nasal devices capable of identifying objects and sensing hazards;however, the memory function is absent in traditional gas sensors, which is crucial to assess the long-term exposure risks. Meanwhile, due to the high operation temperature requirement, the gas sensors are usually difficult to integrate with the synaptic devices to form artificial olfactory systems. Here, we propose a novel artificial olfactory synaptic device to obtain and memorize formaldehyde information. The device is composed of an ion gel synaptic transistor integrated with a Ag-ZnO gas sensor, which can simulate the adverse effects of formaldehyde exposure to the human body and make an early warning. The Ag-ZnO gas sensor can detect and recognize different concentrations of formaldehyde as the chemiresistive signal at room temperature with ultraviolet irradiation instead of at high temperatures. The formaldehyde-induced resistive changes are transmitted to the gate voltage of the synaptic transistor, modulating the channel conductance to generate varying postsynaptic currents and to store gas information to realize the memory function. In addition, the postsynaptic current data of different concentrations can be imported into a support vector machine (SVM) for accurate identification, and early warning of different concentrations can be realized through the system. This bionic olfactory system provides a promising strategy for the development of advanced artificial intelligence and danger warnings. © 2025 American Chemical Society.

关键词： Ag-ZnO gas sensor artificial olfactory system formaldehyde ion gel synaptic transistor UV irradiation

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Suppressing the Surface Roughness of InZnGeO Film and Enhancing TFT Performance by Stacking InZnGaO Layer

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IEEE Transactions on Electron Devices 2025年

作者： Ma, Zheng Peng, Cong Chen, Fa-Hsyang Yan, Guowen Xu, Lin Chen, Longlong Xing, Rubo Li, Xifeng Zhang, Jianhua Shanghai University Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials and Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200072 China Kunshan Govisionox Optoelectronics Company Ltd Jiangsu Suzhou215301 China Hefei Visionox Technology Company Ltd Anhui Hefei230000 China

In this study, the effects of capping an InZnGaO layer on the In-rich InZnGeO film and associated thin film transistors (TFTs) were demonstrated. By introducing an InZnGaO layer and a subsequent annealing process, the channel surface roughness becomes smoother with a root mean square (rms) roughness from 2.250 to 0.672 nm. And the InZnGaO capped InZnGeO TFT shows a field effect mobility significantly increased by 37.5%. This improvement is due to the InZnGaO/InZnGeO structure not only protects the surface of the In-rich film, but also forms a heterojunction providing an additional path for carrier transport. Finally, we obtained that TFT with a field effect mobility of 22.35 cm2 V-1 s-1, exhibiting a low subthreshold swing (SS) of 0.24 V/dec, a threshold voltage of -0.16 V, and a threshold voltage drift of only -0.97 V after applying a positive gate bias stress of 20 V for 3600 s in a working environment of 70 ∘C. Therefore, indicating that an InZnGaO layer stacking on an In-rich film can reduce surface roughness and trap states to protect the In-rich channel and enhance the TFT performance. © 1963-2012 IEEE.

关键词： Thin films

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High-Performance Spiro Bifluoren-Based Charge Generation Layer for the Efficient and Thermal-Stability Organic Light-Emitting Diodes

SSRN

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SSRN 2025年

作者： Xu, Yachen Zhou, Qi Li, Chunya Wu, Ranghui Shi, Wei Lin, Yang Lan, Weixia Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200444 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

We have designed and synthesized 2-(9,9'-spirobi[fluoren]-2-yl)-1,10-phenanthroline (SBFPA) and investigated its optoelectrical and thermal characteristics to apply it as a charge generation layer (CGL). The SBFPA-engaged CGL in tandem organic light-emitting diodes (OLEDs) could efficiently generate and balance the injection of carriers. The current efficiency of the tandem red phosphorous OLED reached 31.2 cd/A at a luminance of 10,000 cd/m², which is 2.7 times that of the single OLED (11.6 cd/A). The decomposition temperature of SBFPA was as high as 342 ℃, which guaranteed the thermal stability of the tandem OLED. Moreover, the T95 lifetime (time to 95% of the initial luminance) of the tandem OLED reached 229 h. The charge generation ability of CGL was confirmed through a p-i-n-CGL-structured OLED, where CGL was inserted between the electron injection layer and the cathode to work as the source of electron generation. The maximum power efficiency of the OLED increased 30.9% to 10.46 lm/W, and the maximum luminescence enhanced 41.5% to 23925 cd/m2 compared to the OLED without CGL. The results highlight the promising application of the developed CGL in tandem OLED, offering new possibilities for development of reliable electronics. © 2025, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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Dynamic hybrid visual-thermal multimodal perception neuromorphic devices based on defect modulation of electrospun nanofibers

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International Journal of Extreme Manufacturing 2025年第02期 753-766页

作者： Shengkai Wen Yanan Liu Yi Li Liang Xie Jun Li Jianhua Zhang School of Microelectronics Shanghai University School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University

Neuromorphic devices, inspired by the intricate architecture of the human brain, have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities. Vision, the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest. Notwithstanding numerous studies simulating the retina through optical synapses, their applications remain circumscribed to single-mode perception. Moreover, the pivotal role of temperature, a fundamental regulator of biological activities, has regrettably been relegated to the periphery. To address these limitations, we proffer a neuromorphic device endowed with multimodal perception, grounded in the principles of light-modulated semiconductors. This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception, featuring temperature-dependent paired pulse facilitation properties and adaptive storage. Crucially, our meticulous examination of transfer curves,capacitance–voltage(C–V) tests, and noise measurements provides insights into interface and bulk defects, elucidating the physical mechanisms underlying adaptive storage and other functionalities. Additionally, the device demonstrates a variety of synaptic functionalities,including filtering properties, Ebbinghaus curves, and memory applications in image recognition. Surprisingly, the digital recognition rate achieves a remarkable value of 98.8%.

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Long-Lived Thermally Activated Delayed Fluorescence and Room Temperature Phosphorescence for Optoelectronic Devices

SSRN

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SSRN 2025年

作者： Wang, Ping Wang, Hanyu Long, Chunye Guan, Yan Wang, Yang Wu, Chengheng Wang, Pu Wang, Fuzhi Xie, He-Lou Key Lab of Environment-friendly Chemistry and Application in Ministry of Education Key Laboratory of Polymeric Materials and Application Technology of Hunan Province Key Laboratory of Advanced Functional Polymer Materials of Colleges Universities of Hunan Province College of Chemistry Xiangtan University Hunan Province Xiangtan411105 China Beijing National Laboratory for Molecular Sciences Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center for Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing100871 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources School of New Energy North China Electric Power University Beijing102206 China

Organic thermally activated delayed fluorescence (TADF) and room temperature phosphorescence (RTP) materials have merited enormous application prospects in organic optoelectronics. In spite of this, long-lived TADF and RTP dual emissions based on single polymers still face great challenge. In this work, we develop a monomer (CzBT) with twisted electron donating carbazole and electron withdrawing benzothiadiazole (D-A) structure and then copolymerize it with N-isopropylacrylamide (NIPAM) to achieve TADF and RTP dual-emission polymers (NP1-50~NP1-1000). They not only exhibit high efficiency (20%) and long-lived (268 ms) TADF emission, but also present red RTP emission with lifetime reaching 240 ms. Theoretical calculations confirm that the introduction of twisted D-A structure and heteroatoms can not only provide appropriate ΔEST (0.21 eV) between the singlet and triplet states to promote long-lived TADF, but also enhance spin orbital coupling for RTP emission. High performance active optical waveguide with quite low optical loss coefficient of 0.097 dB/mm was obtained for NP1-50 fiber. When applied to solution-processable organic light emitting diodes (OLED) devices, it yields excellent current efficiency of 62.7 cd/A with small efficiency roll-off and maximum luminance of 90858 cd/m2. This class of polymers pave the road for high efficiency optoelectronic devices. © 2025, The Authors. All rights reserved.

关键词： Fluorescence

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Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density

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Chinese Physics B 2010年第3期19卷 450-455页

作者：魏斌廖英杰刘纪忠路林曹进王军张建华 Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University

This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mech- anism of charge trapping under different electric regimes. It demonstrates that the carrier trapping was independent of the current density in devices using fluorescent material as the emitting molecule while this process was exactly opposite when phosphorescent material was used. The triplet-triplet annihilation and dissociation of excitons into free charge carriers was considered to contribute to the decrease in phosphorescent emission under high electric fields. Moreover, the fluorescent dye molecule with a lower energy gap and ionized potential than the host emitter was observed to facilitate the carrier trapping mechanism, and it would produce photon emission.

关键词： organic light-emitting diodes excitation mechanism charge trapping current density

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