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Simulation of Bonding and Reliability for Micro-Led Array Based on Copper Pillar Bump

Simulation of Bonding and Reliability for Micro-Led Array Ba...

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hao Fu Zhu Yang Xinhui Meng Hong Fan Xiuzhen Lu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

With the rapid development of automotive electronics and near-eye displays, more stringent requirements have appeared for the heterogeneous integration technology of Micro-LED. Copper pillar bumps, which offer enhanced electrical conductivity, thermal conductivity, and mechanical properties, can meet the demands for higher density and smaller size packaging in Micro-LED array applications. In Micro-LED system integration, bonding plays a critical role as the bonding conditions significantly influence the performance and reliability of Micro-LED. Consequently, it is essential to investigate the effects of bonding conditions on Micro-LED devices to ensure optimal performance and reliability of copper pillar bumps. A model with copper pillar bumps and Micro-LED chips was presented with a bonding simulation and parameter analysis performed in this paper. The finite element method was utilized to examine the thermal-mechanical coupling of one quarter of a $5 \times 5$ Micro-LED array model in this paper. The stress and deformation of the bumps during the bonding process and the effects of bonding conditions on the stress and deformation of the bumps was investigates.

关键词： Performance evaluation Deformation Conductivity Fatigue Bonding forces Thermal conductivity Copper Reliability Bonding Stress

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Thick films of polymer Direct-conversion X-ray detectors 23

Thick films of polymer Direct-conversion X-ray detectors

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23rd IEEE Electronics Packaging Technology Conference, EPTC 2021

作者： Chen, Hu Li, Yi Hao, Zhao Wu, Xingyang Zhang, Jianhua Shanghai University Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200040 China Shanghai University School of Microelectronics Shanghai201800 China

ISBN: (纸本)9781665416191

Organic conjugated polymers have been widely used in the field of X-ray detectors because of their simple processing, mechanical flexibility and low cost. In this paper, we report a vertical structure X-ray detector using PDMS material which is fabricated by simple process steps. The response of pure PDMS material to X-ray is verified, and the effects of different process conditions on the device performance were tested. The detector with film forming speed 2000 rpm and curing temperature 60C still has high sensitivity left (434.5 mu {CGy}_{ {air }}{-1} {cm}{-2}right) to low dose rate left(23.9 mu {Gy}_{ {air }}{S}{-1}right) when the applied bias voltage is 150 V. Finally, the device provides an idea for the development of low cost and high performance flexible direct X-ray detectors. © 2021 IEEE.

关键词： X ray detectors

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A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts

A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Kailin Ren Yuan An Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.

关键词： HEMTs Logic gates Power system stability Threshold voltage Stability analysis Wide band gap semiconductors Gate leakage

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High color-purity light-emitting diodes based on quantum dots/perovskites

High color-purity light-emitting diodes based on quantum dot...

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International Conference on display Technology, ICDT 2021

作者： Wang, Lin Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road 200072 China

Colloidal quantum dots/perovskites based light-emitting diodes (QLEDs/PeLEDs) have attracted extensive attention for lighting and display applications because of their excellent advantages, such as narrow emission bandwidth, color tunability, high brightness and low-cost fabrication techniques. The external quantum efficiencies (EQEs) for QLEDs/PeLEDs are catching up with those for commercial organic light-emitting diodes (OLEDs), thanks to the quantum efficiency improvement, the device configuration optimization as well as the deep understanding of electroluminescence principle. Despite the rapid advance in device performance has been achieved, the operational lifetime of these devices still cannot meet the requirements for practical applications. In this report, we will present our latest advances in improving performance and stability of high color-purity QLEDs/PeLEDs. © 2021, John Wiley and Sons Inc. All rights reserved.

关键词： Semiconductor quantum dots

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Low Subthreshold Swing Enables High Synaptic Weight Gains based on Channel-Side Gate Dependent Electrolyte Transistors FET Design

Low Subthreshold Swing Enables High Synaptic Weight Gains ba...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Qiming Gong Fei Wang Hao Zheng Mengjiao Li School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai People's Republic of China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

With the development of IoT and AI technologies, brain-like synaptic devices with precise weight modulation of synaptic plasticity and controllable preparation are of great significance for developing neuromorphic computing and intelligent sensing technologies. In this paper, we design a series of side-gate electrolyte transistors with varying gate-channel distances and systematically examine the structural design effect on synaptic weight modulation. A synaptic transistor device with an ultra-low subthreshold swing of 89.8 mV/dec has been successfully achieved by optimizing the gate-channel design. Additionally, Further characterizations of the short-term synaptic plasticity and long-term synaptic plasticity of synaptic transistors uncover the flexible modulation of the gate-channel distance-dependent synaptic weight gain behaviors, which span from as low as 6.1 to as high as 87.5 under 50 successive stimuli. The results of this work provide a reliable solution for the design and preparation of high-performance synaptic devices and lay the foundation for high-precision neural networks and intelligent sensing technologies.

关键词： Photonic band gap Neuromorphic engineering Modulation Logic gates Electrolytes Reliability engineering Sensors Transistors Voltage control Integrated circuit reliability

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1-1: Oxide Semiconductor Thin-Film Transistors with High Mobility and Stability

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 6-7页

作者： Guowen Yan Dejian Wang Xiaoqi Sun Pan Wen Cong Peng Lin Xu Lidong Ding Fa-Hsyang Chen Xifeng Li Wangfeng Xi Rubo Xing Junfeng Li Hefei Visionox Technology Co. Ltd. Hefei Anhui China 230000 Kunshan Govisionox Optoelectronics Co. Ltd. Suzhou Jiangsu China 215301 Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China 200072

This paper presents a oxide thin film transistors with high mobility by a new fabricate method. The high mobility TFT with ultra-high mobility of 55cm 2 /Vs has been obtained, and the PBTS and NBTS has also been optim... 详细信息

关键词： Mobility Oxide TFT AMOLED Stability

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Azaspirobifluorene derivatives enhanced efficiency and lifetime of blue phosphorescent oleds

Azaspirobifluorene derivatives enhanced efficiency and lifet...

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International Conference on display Technology, ICDT 2020

作者： Xia, Rongrong Dou, Dehai Liao, Zhangcheng Guo, Jianfeng Wu, Peng Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd Shanghai200072 China

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Finite Element Simulation of Electrothermal and Mechanical Coupling in Micro-LED Array Based on Two Bump Shapes

Finite Element Simulation of Electrothermal and Mechanical C...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Jianxin Li Hao Fu Haojie Zhou Xiaoxiao Ji Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Micro-LED has attracted more attention due to its unique photoelectric properties, such as high brightness, high energy efficiency, high stability and other characteristics, which facilitate its widespread application. Bumps can be used for electrical connections and heat transfer paths as well as structural supports that affect the reliability of Micro-LED devices. Hybrid bonding enhances the reliability and longevity of electronic devices while also ensuring the compatibility of bonding process. Currently, there is limited finite element simulation research on Micro-LEDs, particularly regarding electrothermal and mechanical multi-physical field simulations. Herein, the electrothermal and mechanical coupling of a quarter of a 6×6 Micro-LED array model was analyzed using COMSOL Multiphysics simulation software and the finite element method. The analysis primarily focused on the stress and displacement of bumps in the hybrid bonding model. The optimal combinations of different bump materials (indium-In, tin-Sn) and filling materials (epoxy resin-EP and benzocyclobutene-BCB) were obtained. The results indicate that BCB is a more suitable filling material, while In is preferable as a bump material. Furthermore, variations in thermal stress and displacement of cylindrical and circular-truncated cone bumps of different aspect ratios were analyzed. This paper provides an idea for optimizing the fabrication of Micro-LED bumps and bonding processes.

关键词： Couplings Analytical models Filling Software Finite element analysis Thermal analysis Reliability Bonding Stress Thermal stresses

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Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent

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Light(Science & applications) 2024年第7期13卷 1364-1371页

作者： Lingmei Kong Yun Luo Qianqian Wu Xiangtian Xiao Yuanzhi Wang Guo Chen Jianhua Zhang Kai Wang Wallace CHChoy Yong-Biao Zhao Hongbo Li Takayuki Chiba Junji Kido Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China. Institute of Nanoscience and Applications Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China. Department of Electrical and Electronic Engineering The University of Hong KongHong KongChina. Department of Physics and Lakeside AR/VR Laboratory International Joint Research Center for Optoelectronic and Engineering ResearchYunnan UniversityKunming 650091China. Experimental Center of Advanced Materials School of Materials Science and EngineeringBeijing Institute of TechnologyBeijing 100081China. Graduate School of Organic Materials Science Frontier Center for Organic MaterialsYamagata University4-3-16 JonanYonezawa 992–8510Japan

Light-emitting diodes(LEDs)based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies,but still suffer from severe instability driven by electric ***,we develop a stable,efficient and highcolor purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of *** LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission *** designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating,the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm,a peak luminance of over 176,000 cd m^(−2),a maximum external quantum efficiency of over 40%,and an operational half-lifetime of over 42,000 h.

关键词： diodes narrow quantum

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Fatigue Life Analysis of Hybrid Bonding in Micro-LED Interconnection

Fatigue Life Analysis of Hybrid Bonding in Micro-LED Interco...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinhui Meng Kefeng Wang Hong Fan Zhu Yang Hao Fu Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Micro-LED displays have garnered widespread attention due to their high resolution, high brightness, and long lifespan. However, the heterogeneous integration and the reliability of Micro-LEDs pose significant challenges for their commercialization. As Micro-LED products develop towards larger sizes and narrower pitches, the Au/In bonding process has become a prevalent strategy for achieving high-resolution interconnections. To address the issue of the life span being affected by the plastic deformation of indium bumps, which ultimately fail in the form of yielding, an Au/In-resin hybrid bonding technique to improve the reliability of high-resolution Micro-LEDs was proposed in this paper. The reliability of the flip-chip bonding structure of a $4\times 4$ Micro-LED array was analyzed using ANSYS simulation software and finite element methods. The Anand unified viscoplastic constitutive model was employed for both indium bumps and the encapsulating resin. The model was subjected to temperature cycling loads ranging from $-55^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ in accordance with the JEDEC temperature cycling standard. The Coffin-Manson fatigue life prediction model, which accounts for plastic strain in materials, was introduced to estimate the thermal cycling fatigue life of the Micro-LED interconnection structures. The equivalent plastic strain range of hybrid bonding device was $6.708\times 10^{-3}$ , surpassing the $7.59\times 10^{-3}$ observed in device with conventional bump bonding. The hybrid bonding device exhibited a thermal cycling life of 12747 cycles, which was about 36% longer than that of the bump bonding device. It suggests that resin helps to extend the thermal cycling life of the device and enhance its reliability.

关键词： Temperature distribution Deformation Fatigue Software reliability Finite element analysis Resins Plastics Bonding Strain Load modeling

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