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Enhanced High-Temperature Energy Storage Properties of BOPP Capacitor Films by Coating Heterostructural Ceramics Layers

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IET Nanodielectrics 2025年第1期8卷

作者： Xing, Zhaoliang Gong, Bize Yin, Tianyuan Guo, Shaowei Yang, Bo Zhang, Tiandong Hao, Jianhong State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing China State Key Laboratory of Advanced Power Transmission Technology China Electric Power Research Institute Beijing China Key Laboratory of Engineering Dielectrics and Its Application Ministry of Education Harbin University of Science and Technology Harbin China School of Electrical and Electronic Engineering Harbin University of Science and Technology Harbin China

Biaxially oriented polypropylene (BOPP), the dielectric material of choice for polymer film capacitors, is widely used in advanced electronic devices and power grids, among other applications. However, the nonlinear growth of the conduction loss at high temperatures leads to a rapid deterioration of its energy storage performance, which seriously hinders the development trend of miniaturisation and high integration of power systems. In this study, inorganic nanolayers with heterogeneous structure were grown on the surface of BOPP films by magnetron sputtering using high dielectric constant BaZrTiO3 and wide bandgap Al2O3 ceramic targets. Experimental and theoretical analyses show that the use of wide bandgap Al2O3 as the heterojunction outer layer can effectively impede carrier injection and transport, leading to a significant reduction in the leakage current density of the composite film, effectively enhancing the high temperature energy storage performance of the composite films. The synergistic enhancement of the inorganic heterojunction structure on the dielectric properties and insulating strength of the polymer film is attributed to the ability of the Al2O3/BaZrTiO3/BOPP/BaZrTiO3/Al2O3 (O-B-P-B-O) composite films to exhibit a discharge energy density of 2.49 J/cm3 and a charge/discharge efficiency of 77.6% at 125°C and 500 MV/m. © 2025 The Author(s). IET Nanodielectrics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.

关键词： Nanocomposite films

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Molecular dynamics simulation of water vapor barrier properties for silicon nitride deposited by PECVD

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Journal of Alloys and Compounds 2025年 1032卷

作者： Tian, Boqing Wu, Majiaqi Yang, Xiaoni Guo, Zhengrong Yang, Lianqiao School of Microelectronics Shanghai University Chengzhong Road 20 Shanghai201800 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang Road 149 Shanghai200072 China School of Energy Engineering Yulin University Chongwen Road 51 Shanxi Yulin719000 China

Silicon nitride (SiNx) films are widely used as encapsulation materials for flexible organic light-emitting diodes (OLEDs) in the field of microelectronics fabrication, where the water vapor transmission rate (WVTR) is a key index for evaluating the performance of encapsulation materials. In this paper, molecular dynamics (MD) simulations were used to investigate the WVTR characteristics of SiNx films prepared by plasma-enhanced chemical vapor deposition (PECVD) process. The film models used are from MD simulations of PECVD deposited SiNx films, aiming to reflect the actual properties of the films more accurately. Through the MD simulation and experimental analysis of SiNx films at different deposition temperatures, this paper explores the effects of the film characteristics, such as density, free volume, water contact angle, and surface roughness, on the WVTR. The results show that the WVTR, free volume, and surface roughness of the films show a decreasing trend with increasing deposition temperature, while their density and water contact angle increase. These findings provide important insights for a deeper understanding of the main influencing factors on the WVTR of SiNx films under the PECVD process, and provide theoretical support for further improving the performance of flexible OLED packaging materials, optimizing the PECVD process, and realizing cost-effective improvements. © 2025 Elsevier B.V.

关键词： Plasma enhanced chemical vapor deposition

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Dynamic hybrid visual-thermal multimodal perception neuromorphic devices based on defect modulation of electrospun nanofibers

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International Journal of Extreme Manufacturing 2025年第2期 753-766页

作者： Shengkai Wen Yanan Liu Yi Li Liang Xie Jun Li Jianhua Zhang School of Microelectronics Shanghai University School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University

Neuromorphic devices, inspired by the intricate architecture of the human brain, have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities. Vision, the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest. Notwithstanding numerous studies simulating the retina through optical synapses, their applications remain circumscribed to single-mode perception. Moreover, the pivotal role of temperature, a fundamental regulator of biological activities, has regrettably been relegated to the periphery. To address these limitations, we proffer a neuromorphic device endowed with multimodal perception, grounded in the principles of light-modulated semiconductors. This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception, featuring temperature-dependent paired pulse facilitation properties and adaptive storage. Crucially, our meticulous examination of transfer curves,capacitance–voltage(C–V) tests, and noise measurements provides insights into interface and bulk defects, elucidating the physical mechanisms underlying adaptive storage and other functionalities. Additionally, the device demonstrates a variety of synaptic functionalities,including filtering properties, Ebbinghaus curves, and memory applications in image recognition. Surprisingly, the digital recognition rate achieves a remarkable value of 98.8%.

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Flexible Active-Matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinyi Wang Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO 2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology.

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Mechanical Properties of Flip-Chip Bonding Structures for Micro-Led Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding

Mechanical Properties of Flip-Chip Bonding Structures for Mi...

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China Semiconductor Technology International Conference (CSTIC)

作者： Kefeng Wang Zehua Chen Xiaoxiao Ji Luqiao Yin Xiuzhen Lu Zhang Jianhua Zhang School of microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

A traditional bonding structure with indium bumps and a new bonding structure with passivation layer using Cu bumps were simulated to bond Micro-LED and substrate. Anand model and bilinear isotropic hardening model were used to characterize the viscoplastic behavior of In and the plastic behavior of composite structure simplified from the combination of Cu and Au, respectively. Mechanical properties of two kinds of micro-display devices with different bonding structures were analyzed by the ANSYS finite element method and the thermo-mechanical coupling field. The deformation and stress of the micro-display device using Cu-Cu bonding structure with passivation layer are reduced by 19.5% and 59.1% compared with the device bonded by In bumps.

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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array

Simulation Study on Electrothermal and Mechanical Coupling o...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Hao Fu Kefeng Wang Xiaoxiao Ji Liang Chen Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps.

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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light‑emitting diodes

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Moore and More 2024年第1期1卷 1-9页

作者： Xiaofei Zhang Lin Wang Lingmei Kong Sheng Wang Jun Dai Guohua Jia Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai UniversityShanghai 201899China Department of Physics Jiangsu University of Science and TechnologyZhenjiang 212100JiangsuChina School of Molecular and Life Sciences Curtin UniversityGPO Box U1987PerthWA 6845Australia

Quasi-two-dimensional(quasi-2D)perovskite-based light-emitting diodes(PeLEDs)have attracted intensive attention due to their high quantum yields,tunable emission wavelengths,and solution-processing capability,showing great potential in next-generation display and lighting ***,further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias,leading to crowding of interfacial carriers and severe efficiency ***,we insert an ultra-thin dielectric buffer layer of lithium fluoride(LiF)into the electron transport layer(ETL)to regulate the transfer dynamics of electrons and passivate the interfacial defects *** dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelm-ing injection of ***,the fluoride anions from LiF can passivate the surface defects of the perovskite film,enhancing the radiative *** a result,the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency(EQE)of 24.03%and a maximum brightness of 30845 cdm^(-2).The operational stability of the device is also extended,with a half-lifetime(T_(50))of 71.28 min(at an initial luminance of 1000 cdm^(-2)),which is 7.4-fold longer than that for the control device.

关键词： Perovskite light-emitting diodes Efficiency roll-off LiF interlayer Charge balance Defect passivation

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Thick films of polymer Direct-conversion X-ray detectors

Thick films of polymer Direct-conversion X-ray detectors

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Electronics Packaging Technology Conference (EPTC)

作者： Hu Chen Yi Li Zhao Hao Xingyang Wu Jianhua Zhang The Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China Shanghai University Shanghai China

ISBN: (纸本)9781665416207

Organic conjugated polymers have been widely used in the field of X-ray detectors because of their simple processing, mechanical flexibility and low cost. In this paper, we report a vertical structure X-ray detector using PDMS material which is fabricated by simple process steps. The response of pure PDMS material to X-ray is verified, and the effects of different process conditions on the device performance were tested. The detector with film forming speed 2000 rpm and curing temperature 60°C still has high sensitivity $\left (434.5 \mu \mathrm{CGy}_{\text {air }}^{-1} \mathrm{~cm}^{-2}\right)$ to low dose rate $\left(23.9 \mu \mathrm{Gy}_{\text {air }}\text{S}^{-1}\right)$ when the applied bias voltage is 150 V. Finally, the device provides an idea for the development of low cost and high performance flexible direct X-ray detectors.

关键词： Performance evaluation Temperature sensors Micrometers X-ray detectors Sensitivity Costs Voltage

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