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2024 IEEE International Electron Devices Meeting, IEDM 2024

作者： Yu, Zuoxu Sang, Yimeng Zhang, Yuzhen Zhang, Yiyang Shi, Runxiao Liu, Siyang Tao, Tao Li, Xifeng Peng, Cong Zhang, Rong Wu, Wangran Zhuang, Zhe Liu, Bin Sun, Weifeng School of Integrated Circuits National ASIC System Engineering Research Center Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (纸本)9798350365429

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm2V-1s-1, via mass-production compatible processes utilizing SiO2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs (μ-LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded μ-LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix μ-LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future. © 2024 IEEE.

关键词： Thin film transistors

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基于低浓度掺杂TTF-HLCT一体化分子提供的多重激子循环通道增强深蓝光OLED的稳定性

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Science China Materials 2024年第7期67卷 2161-2168页

作者：唐振宇龚乐帆郭浩清杨爽罗骏唐荣肖静张震曲波陈志坚肖立新 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China College of Physics and Electronic Engineering Taishan UniversityTaian 271000China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

目前,商用的深蓝有机发光二极管(OLED)使用的三重态-三重态融合(TTF)型发光材料只能捕获50%的三重态(T_(1))激子,导致其器件效率较低.基于窄带蓝色发射体的热激活延迟荧光(TADF)和超荧光策略可以实现接近100%的激子利用率,然而,在发射层... 详细信息

目前,商用的深蓝有机发光二极管(OLED)使用的三重态-三重态融合(TTF)型发光材料只能捕获50%的三重态(T_(1))激子,导致其器件效率较低.基于窄带蓝色发射体的热激活延迟荧光(TADF)和超荧光策略可以实现接近100%的激子利用率,然而,在发射层(EML)中停留的高能量T_(1)激子通常会导致不可避免的分子降解,从而限制了器件的使用寿命.为了解决这一问题,本文研究了一种TTF-杂化局域-电荷转移态(HLCT)一体化分子,旨在通过多个激子回收通道降低EML内T_(1)激子的密度,从而提高高效深蓝OLED的稳定性.通过TTF过程回收T_(1)激子,通过HLCT过程利用高能三重态(Tn)激子,可以提高EML中三重态激子的利用率.此外,低浓度掺杂的TTF-HLCT分子在TADF体系中可以减轻T_(1)激子猝灭造成的效率损失.最后,实现了外量子效率(EQE)为25.9%、CIE为(0.131,0.050)、蓝光指数(CE由CIEy校准)为312 cd A^(−1) CIE_(y)^(−1)的顶发射OLED,并且其寿命T90@1000 cd m^(−2)从0.5小时延长到6.1小时.本工作揭示了低浓度TTF-HLCT分子掺杂的潜力,作为一种可行的解决方案,可以最大限度地减少效率猝灭,并解决蓝光OLED的稳定性问题.

关键词： organic light-emitting diode stability multiple ex-citon recycling channels deep blue emission TTF-HLCT

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Anti-Blue Light and Hydrophobic Composite Film Based on Iron Oxide and Fas-Modified Sio2

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SSRN 2024年

作者： Zhang, Jianhua Yu, Jiaqi Wu, Xingyang Qiao, Weidong Wang, Hongdong Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai200444 China School of Mechatronic Engineering and Automation Shanghai University Shanghai200444 China

With the wide application of display and lighting devices, the potential injury to human eyes due to the blue light has been attracting significant attention. While current anti-blue light films are complex, costly and low stability in humid environments. In this work, anti-blue light films were fabricated using iron oxide as blue light absorbent and polyvinylpyrrolidone as surfactant, under different Fe3+ concentrations and annealing temperatures. The films exhibited average 60% absorption of blue light in 400-450 nm wavelength range and maintained 96% transmittance within 500-800 nm. Moreover, to improve the hydrophobicity, 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FAS)-modified SiO2 (FASS) hydrophobic layer was deposited onto the iron oxide films to obtain the composite iron oxide/FASS films. The composite films remained transmittance almost unchanged after 15 days at 85 °C and 85% relative humidity. Also, cell experiments proved that the composite films could protect human retinal pigment epithelium cells from blue light injury. Moreover, the color rendering index of the display screen remained almost unchanged after covered with the composite film, while the blue light-weighted radiance was reduced significantly. © 2024, The Authors. All rights reserved.

关键词： Iron oxides

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High Performance All Oxide Thin Film Transistor With Ink-Jet Printing Metal Oxide Dielectric Pattern

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SSRN 2024年

作者： Zhao, Zexian Gui, Zhenghao Xu, Meng Zou, Kefeng Chen, Longlong Li, Xifeng Zhang, Jianhua School of Materials Science and Engineering Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Application of Ministry of Education Shanghai University Shanghai200072 China

In this paper, the effect of the printing parameters on the forming behavior of dot, line and plane for hafnium aluminum oxide (HAO) is thorough investigated by simulation and experiment. At first, the spreading process of inkjet droplets has been numerically simulated through the utilization of the volume of fluid (VOF) model. And the optimal contact angle and drop space for printing HAO pattern were obtained. Ultrasonic treatment can remove some polar hydrophilic molecules on the surface of the substrate, which controlled the spread of the printed patterns. The inkjet-print HAO film exhibits the permittivity of 9.3 at 100kHz and afforded a leakage current below 10-6 A/cm2 at 2 MV. Finally, the fabricated TFTs using inkjet print exhibit mobility (μ) of 8.89 cm2v-1s-1, subthreshold swing (SS) of 0.09 V/decade and ON-OFF-current ratio (Ion/Ioff) of 8.69×108. Implied that the ultrasonic treatment can serve as guidelines for high quality printing pattern. © 2024, The Authors. All rights reserved.

关键词： Morphology

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A Novel Voltage-Controlled Oscillator Suitable for Silicon-Based Microdisplay Driver Clock

A Novel Voltage-Controlled Oscillator Suitable for Silicon-B...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Maoxiang Xu Jianhua Zhang Aiying Guo Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

In order to provide silicon microdisplay drivers a wide tuning range clock and solve the problem that the tuning range of VCO is not wide enough, a wide tuning range multi-band feedforward differential delay cell based on CMOS inverter is proposed in this paper. The cell achieves the wide-tuned multi-band effect by adjusting the control voltage (VCTRL) and the control voltage sequence bits. In the HLMC 55LP process, the differential VCO can be adjusted from 3.92GHz to 8.63GHz to achieve a wide tuning range of multi-band output with a FOM of −157.02dBc/Hz.

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Enhancing crystal integrity and structural rigidity of CsPbBr_(3) nanoplatelets to achieve a narrow colorsaturated blue emission

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Light(Science & applications) 2024年第5期13卷 985-997页

作者： Qianqian Huang Wenxu Yin Bo Gao Qingsen Zeng Dong Yao Hao Zhang Yinghe Zhao Weijia Zheng Jiaqi Zhang Xuyong Yang Xiaoyu Zhang Andrey L.Rogach Key Laboratory of Automobile Materials MOE School of Materials Science&Engineeringand Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy MaterialsJilin UniversityChangchunChina. State Key Laboratory of Supramolecular Structure and Materials College of ChemistryJilin UniversityChangchunChina. State Key Laboratory of Materials Processing and Die&Mould Technology School of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhanHubeiChina. Department of Chemistry University of VictoriaVictoriaBCCanada. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina. Department of Materials Science and Engineering and Centre for Functional Photonics(CFP)City University of Hong KongHong Kong S.A.RChina

Quantum-confined CsPbBr_(3) perovskites are promising blue emitters for ultra-high-definition displays,but their soft lattice caused by highly ionic nature has a limited ***,we endow CsPbBr_(3) nanoplatelets(NPLs)with atomic crystal-like structural rigidity through proper surface engineering,by using strongly bound N-dodecylbenzene sulfonic acid(DBSA).A stable,rigid crystal structure,as well as uniform,orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage,by switching from molecular clusters to mono-octahedra,while interaction with DBSA resulted in formation of a Cs_(x)O monolayer shell capping the NPL *** a result,both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA,which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand ***,rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films,which facilitates efficient charge injection and *** photoluminescence of the produced CsPbBr_(3) NPLs is bright(nearly unity emission quantum yield)and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K,while the bandwidth of the electroluminescence(peaked at 460 nm)also reaches a record-narrow value of 15 nm at room *** value corresponds to the CIE coordinates of(0.141,0.062),which meets Rec.2020 standards for ultra-high-definition displays.

关键词： temperature stability narrow

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Improved Properties of A-Igzo Tft with Inorganic/Organic Stacked Passivation Layer

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SSRN 2022年

作者： Chen, Longlong Peng, Cong Xu, Meng Yang, Shibo Li, Xifeng Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai200072 China

High perfomance a-IGZO TFTs device is fabricated with inorganic / organic stacked layers as passivation layer (PL). The designed bilayer passivation layer structure exhibits extraordinary barrier characteristics to environment humidity. The off-state current of oxide TFTs is reduced for one order (at 10-13), and the negative bias illumination stress (NBIS) of device exhibits an excellent stability after one year of ambient storage which the ΔVth is lower than 0.1 V. The manufacture process of stacked layers is simple and low cost than traditional vacuum process which is promising substitute for SiO2-PL by PECVD. © 2022, The Authors. All rights reserved.

关键词： Passivation

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Mechanical Properties of Flip-Chip Bonding Structures for Micro-Led Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding

Mechanical Properties of Flip-Chip Bonding Structures for Mi...

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2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Wang, Kefeng Chen, Zehua Ji, Xiaoxiao Yin, Luqiao Lu, Xiuzhen Zhang, Jianhua School of Microelectronics Shanghai University Shanghai201800 China Shanghai University Ministry of Education Key Laboratory of Advanced Display and System Applications Shanghai200072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China

ISBN: (纸本)9798350311006

A traditional bonding structure with indium bumps and a new bonding structure with passivation layer using Cu bumps were simulated to bond Micro-LED and substrate. Anand model and bilinear isotropic hardening model were used to characterize the viscoplastic behavior of In and the plastic behavior of composite structure simplified from the combination of Cu and Au, respectively. Mechanical properties of two kinds of micro-display devices with different bonding structures were analyzed by the ANSYS finite element method and the thermo-mechanical coupling field. The deformation and stress of the micro-display device using Cu-Cu bonding structure with passivation layer are reduced by 19.5% and 59.1% compared with the device bonded by In bumps. © 2023 IEEE.

关键词： display devices

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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array 20

Simulation Study on Electrothermal and Mechanical Coupling o...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Yang, Zhu Fu, Hao Wang, Kefeng Ji, Xiaoxiao Chen, Liang Yin, Luqiao Lu, Xiuzhen Zhang, Jianhua School of Microelectronics Shanghai University Shanghai201800 China Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai2000072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai2000072 China

ISBN: (纸本)9798350385373

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps. © 2023 IEEE.

关键词： Light emitting diodes

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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing 20

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Wang, Xinyi Zhou, Haojie Ji, Xiaoxiao Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai200072 China School of Materials Science and Engineering Shanghai University Shanghai200072 China

ISBN: (纸本)9798350385373

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology. © 2023 IEEE.

关键词： Atomic layer deposition

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