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SSRN 2022年

作者： Cao, Fengyin Huang, Xinpeng An, Ping Yang, Chao Shanghai Institute for Advanced Communication and Data Science School of Communication and Information Engineering Shanghai University Shanghai200444 China Key Laboratory for Advanced Display and System Application Ministry of Education Shanghai200072 China

To alleviate the spatial-angular trade-off in light fields (LFs), LF super-resolution (SR) has been studied. Most of current methods only concern limited relations in LFs, which leads to the insufficient exploitation of the multi-dimensional information. To address this issue, we present a multi-models framework for LFSR in this paper. Models which embody LF from distinct aspects are integrated to constitute the framework. Therefore, the number and the arrangement of these models and the depth of each model determine the framework’s performance, we make the comprehensive analysis on these factors to reach the best result. However, models in the framework are isolated to each other as the unique inputs are required. To tackle this issue, the representation alternate convolution (RAC) is introduced. As the fusion is conducted through the RAC, the multi-dimensional information in LFs is fully exploited. Experimental results demonstrate that our method achieves superior performance against state-of-the-arts techniques. © 2022, The Authors. All rights reserved.

关键词： Convolution

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A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

A Monolithically Integrated Voltage Reference based on AlGaN...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Luqiao Yin Jianhua Zhang Kailin Ren Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) School of Microelectronics Shanghai University Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V REF ) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V REF of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.

关键词： Temperature sensors Temperature distribution Circuits HEMTs Logic gates Threshold voltage Generators Wide band gap semiconductors MODFETs Aluminum gallium nitride

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Metal-oxide field-effect transistors for display and beyond 19

Metal-oxide field-effect transistors for display and beyond

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19th International Conference on Optical Communications and Networks, ICOCN 2021

作者： Li, Linkang Fu, Wenhui Li, Jun Zhang, Jianhua Zhang, Zhilin School of Material Science and Engineering Shanghai University Shanghai Jiading201800 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

ISBN: (纸本)9781665424462

Metal oxide field-effect transistors (FETs) have potential applications in display, flexible electronic device. Here, we will report the advance of our OLED display, metal oxide FETs, and application in beyond display. We have paid more attention to the stability improvement, interface trap of MO-TFT, and application in CMOS circuit, artificial synapse and gas sensor. © 2021 IEEE.

关键词： Field effect transistors

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Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors

Subthreshold Swing Model of GaN-Based Fin-Gate High Electron...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hanlin Yang Jiayi Yang Tiantian Guan Kailin Ren School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China

Compared to the traditional HEMTs, better gate control ability especially smaller subthreshold swing, can be achieved with a fin-gate structure, which can be widely used in power, RF circuits. However, there has been few works related to subthreshold swing reported previously. In this study, a Fin- HEMT device is investigated by TCAD simulation, and a subthreshold swing model was constructed. The simulation results verify the performance of the model. According to the simulation results, with an error of less than 6%, this work provide design guidlines for the research of Fin-HEMT devices.

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Halftone spatial frequency domain imaging enables kilohertz high-speed label-free non-contact quantitative mapping of optical properties for strongly turbid media

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Light(Science & applications) 2021年第12期10卷 2518-2530页

作者： Yanyu Zhao Bowen Song Ming Wang Yang Zhao Yubo Fan Beijing Advanced Innovation Center for Biomedical Engineering Key Laboratory for Biomechanics and Mechanobiology of Ministry of EducationSchool of Engineering Medicineand with the School of Biological Science and Medical EngineeringBeihang University100191 BeijingChina Institute of Spacecraft Application System Engineering China Academy of Space Technology100094 BeijingChina Beijing Institute of Spacecraft Engineering 100094 BeijingChina

The ability to quantify optical properties(i.e.,absorption and scattering)of strongly turbid media has major implications on the characterization of biological tissues,fluid fields,and many ***,there are few methods that can provide wide-field quantification of optical properties,and none is able to perform quantitative optical property imaging with high-speed(e.g.,kilohertz)*** we develop a new imaging modality termed halftone spatial frequency domain imaging(halftone-SFDI),which is approximately two orders of magnitude faster than the state-of-the-art,and provides kilohertz high-speed,label-free,non-contact,wide-field quantification for the optical properties of strongly turbid *** method utilizes halftone binary patterned illumination to target the spatial frequency response of turbid media,which is then mapped to optical properties using model-based *** validate the halftone-SFDI on an array of phantoms with a wide range of optical properties as well as in vivo human *** demonstrate with an in vivo rat brain cortex imaging study,and show that halftone-SFDI can longitudinally monitor the absolute concentration as well as spatial distribution of functional chromophores in *** also show that halftone-SFDI can spatially map dual-wavelength optical properties of a highly dynamic flow field at kilohertz ***,these results highlight the potential of halftone-SFDI to enable new capabilities in fundamental research and translational studies including brain science and fluid dynamics.

关键词： optical scattering media

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Editing the Shape Morphing of Monocomponent Natural Polysaccharide Hydrogel Films

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Research 2021年第1期2021卷 835-846页

作者： Hao Hu Chao Huang Massimiliano Galluzzi Qiang Ye Rui Xiao Xuefeng Yu Xuemin Du Institute of Biomedical&Health Engineering Shenzhen Institute of Advanced Technology(SIAT)Chinese Academy of Sciences(CAS)Shenzhen 518035China Key Laboratory of Polymeric Materials and Application Technology of Hunan Province Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of EducationSchool of ChemistryXiangtan UniversityXiangtan 411105China Institute of Advanced Materials Science and Engineering Shenzhen Institute of Advanced Technology(SIAT)Chinese Academy of Sciences(CAS)Shenzhen 518035China State Key Laboratory of Fluid Power&Mechatronic System Key Laboratory of Soft Machines and Smart Devices of Zhejiang ProvinceDepartment of Engineering MechanicsZhejiang UniversityHangzhou 310027China

Shape-morphing hydrogels can be widely used to develop artificial muscles,reconfigurable biodevices,and soft ***,conventional approaches for developing shape-morphing hydrogels highly rely on composite materials or complex manufacturing techniques,which limit their practical ***,we develop an unprecedented strategy to edit the shape morphing of monocomponent natural polysaccharide hydrogel films via integrating gradient cross-linking density and geometry *** to the synergistic effect,the shape morphing of chitosan(CS)hydrogel films with gradient cross-linking density can be facilely edited by changing their geometries(length-to-width ratios or thicknesses).Therefore,helix,short-side rolling,and longside rolling can be easily ***,various complex artificial 3D deformations such as artificial claw,horn,and flower can also be obtained by combining various flat CS hydrogel films with different geometries into one system,which can further demonstrate various shape transformations as triggered by *** work offers a simple strategy to construct a monocomponent hydrogel with geometry-directing programmable deformations,which provides universal insights into the design of shape-morphing polymers and will promote their applications in biodevices and soft robotics.

关键词： effect linking geometry

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Dynamic hybrid visual-thermal multimodal perception neuromorphic devices based on defect modulation of electrospun nanofibers

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International Journal of Extreme Manufacturing 2025年第2期 753-766页

作者： Shengkai Wen Yanan Liu Yi Li Liang Xie Jun Li Jianhua Zhang School of Microelectronics Shanghai University School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University

Neuromorphic devices, inspired by the intricate architecture of the human brain, have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities. Vision, the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest. Notwithstanding numerous studies simulating the retina through optical synapses, their applications remain circumscribed to single-mode perception. Moreover, the pivotal role of temperature, a fundamental regulator of biological activities, has regrettably been relegated to the periphery. To address these limitations, we proffer a neuromorphic device endowed with multimodal perception, grounded in the principles of light-modulated semiconductors. This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception, featuring temperature-dependent paired pulse facilitation properties and adaptive storage. Crucially, our meticulous examination of transfer curves,capacitance–voltage(C–V) tests, and noise measurements provides insights into interface and bulk defects, elucidating the physical mechanisms underlying adaptive storage and other functionalities. Additionally, the device demonstrates a variety of synaptic functionalities,including filtering properties, Ebbinghaus curves, and memory applications in image recognition. Surprisingly, the digital recognition rate achieves a remarkable value of 98.8%.

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Flexible Active-Matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinyi Wang Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO 2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology.

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