The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/(V.s), on/off ratio of 7.5&...
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The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/(V.s), on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) technology.
The research of high-brightness organic light-emitting diodes, as an important branch of organic light-emitting diodes (OLEDs), makes it possible for achieving high-brightness lighting source and lasing. Heat dissip...
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The research of high-brightness organic light-emitting diodes, as an important branch of organic light-emitting diodes (OLEDs), makes it possible for achieving high-brightness lighting source and lasing. Heat dissipation and efficiency roll off, as two main factors, affect the brightness of the OLEDs heavily. In this paper, high-brightness OLEDs are obtained by utilizing pulse voltage, small areas and micro-cavity structure to minimize the effect of the two factors. The major advances, ongoing challenges and future perspectives of this research frontier are also critically discussed.
Emission characteristics of top emitting organic light-emitting devices (TOLEDs) with Ag as reflective anode, Al/Ag as semitransparent cathode and 90 160 nm [N-(1-naphthyl)-N-phenyl-amino] biphenyl/tris-(8-hydrox...
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Emission characteristics of top emitting organic light-emitting devices (TOLEDs) with Ag as reflective anode, Al/Ag as semitransparent cathode and 90 160 nm [N-(1-naphthyl)-N-phenyl-amino] biphenyl/tris-(8-hydroxy quinoline) aluminum (NPB/Alq3) sandwiched in the electrodes are examined. The electroluminescence (EL) spectra of the TOLEDs are simulated based on the Fabry-Perot cavity theory. And the resonant modes in cavity structure of TOLEDs is discussed and clarified which can accurately describe the work principle of the devices. A fairly good match between calculated values and experimental data is achieved at different emission colors from bluish green to orange.
This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes (flip chip LEDs) on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based...
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This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes (flip chip LEDs) on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence (EL) intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.
We have fabricated high-efficient white organic light-emitting diodes (WOLEDs) using two types of electron transport materials with different electron mobility. The effect of the electron mobility on the device perf...
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We have fabricated high-efficient white organic light-emitting diodes (WOLEDs) using two types of electron transport materials with different electron mobility. The effect of the electron mobility on the device performance is discussed. In addition, to generate the desired white emission and high color rendering index, we perform the structure design of OLED, in which the functions of co-host of blue and green dopants on chromatic-stability are investigated. Experimental results find that the maximum color rendering index reaches as high as 91 at the voltage of 8 V.
Jetting is regarded as the next generation dispensing technology due to its features of non-contact and high precision dispensing. In this paper, we developed a jetting system for chip-on-glass package consisting of a...
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ITO transparent film was deposited on glass substrates by RF-magnetron sputtering equipment as electrode, routing material and the photolithography process was studied. The results shown that the ITO based transparent...
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A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatmen...
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A novel nonsubsampled contourlet Bi-linear interpolation algorithm for remote sensing image is proposed, which is based on the estimation of detail nonsubsampled contourlet coefficients at high resolution scales. The ...
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Micro-LED has attracted more attention due to its unique photoelectric properties, such as high brightness, high energy efficiency, high stability and other characteristics, which facilitate its widespread application...
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