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Study into High Temperature Reliability of Isotropic Conductive Adhesive

Study into High Temperature Reliability of Isotropic Conduct...

2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Wenhui Du Huiwang Cui Si Chen Zhichao Yuan Lilei Ye Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S Shangda Rui Hu Microsystem Integration Technology Co.Ltd Room 101 Science &Technology Building Sh Smart High Tech AB Fysikgrand 3 41296 Gothenburg SWEDEN Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center S

With the rapid development of technologies for high density assembly and packaging in electronic industry, isotropic conductive adhesive (ICA) has been paid more and more attention as a potential substitute for solder, due to its advantages of low processing temperature, simple processing conditions and good manufacturability. However, studies into the reliability of ICA are not as abundant as those of solder. As a composite material, the failure feasibility of ICA not only depends not only on the variation in performance of different constituent parts, such as high temperature aging of the polymer, aging due to moisture absorption and oxidization of filler particles, but also on interface changes. Thus, the failure mechanism of ICA seems to be complicated and studies into the reliability of ICA are also necessary. Reliability in humidity and heat has been investigated in previous works, and in this paper high temperature reliability will be studied as a comparison. Some reliability tests and results will be given and some failure mechanisms discussed. Finally, we present some discussion about the further optimization of reliability for follow-up studies.

关键词： Aging Reliability Conductivity Conductive adhesives Materials Packaging Temperature

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Simulation of multi-bit digital delta-sigma modulator

Simulation of multi-bit digital delta-sigma modulator

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Wen-Rong Yang Yuan-Yuan Cheng Jiong-ming Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Microelectronic Research & Development Center Shanghai University Shanghai China

The paper describes a four-order delta-sigma modulation (DSM) with 15 levels quantizer which is used in a 24-bit 44.1-kHz sample-rate audio digital-to-analog converter (DAC). An odd level quantizer has been chosen instead of an even level to reduce quantization noise. The noise transfer function (NTF) is designed to have the zeros optimally in order to increase DR. The peak SNR of the DSM is about 130 dB, which is enough for an audio DAC designed with a 0.35 um CMOS technology.

关键词： Noise Signal to noise ratio Quantization CMOS technology Transfer functions CMOS integrated circuits Converters

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Design of SSCMP with Arbiter and Shared Data Memory Interrupt

Design of SSCMP with Arbiter and Shared Data Memory Interrup...

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yueli Hu Ying Liu Wenyi Jing Microelectronic Research & Development Center Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

In the machine vision system, a common and effective way to solve high complexity and huge throughput of image processing arithmetic computation is to adopt instruction-level-parallel scheme through multiple MCUs with the single-threading architecture. Based on it, this paper proposed a kind of symmetric single-chip multiprocessor (SSCMP) architecture, which composed of four subprocessors and one solution for on-chip arbiter and shared data memory interrupt (SDMI). Each subprocessor could work in cooperant and also was completely independent mode. What's more, the proposed architecture set up a shared space for command transfering and data exchanging. An arbiter judgment scheme and effective interrupt access mechanism were introduced to reduce the burden of data exchange and eliminate competitions between the subprocessors.

关键词： Signal processing Hardware Machine vision Image processing Computer architecture Process control Costs Registers Microelectronics Laboratories

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The design of the cache crossbar based on OpenSPRAC architecture

The design of the cache crossbar based on OpenSPRAC architec...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Xi-chuan Wang Bin-feng Qian Microelectronic Research & Development Center Key Laboratory of Advanced Display & System Applications Ministry of Education Shanghai University Shanghai China

Multi-core processor is widely used on the server and desktop computer nowadays. This paper describes the structure of a cache crossbar which used in the multi-core processor SPARC T2. The cores can use the cache crossbar to exchange the data in the L2 cache banks. The multi cores can communicate among each other core by sharing the data in the L2 cache banks. And with the analysis of the CCX, this paper provides a protocol for connecting multi cores and cache banks. The cache crossbar is implemented in SMIC 0.13 mum with design compiler and can run at 200 MHz.

关键词： Magnetic cores Protocols Sun Computer architecture Pipelines Registers Packaging

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A Pipeline Sliding Window Max-Log-Map Turbo Decoder

A Pipeline Sliding Window Max-Log-Map Turbo Decoder

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Ming Li Ming-ming Peng Jing-sai Jiang Fa-yu Wan Microelectronic Research & Development Center Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

Turbo codes have become an attractive forward error correction scheme for wireless communication systems. MAP algorithm is the optimization algorithm for turbo-codes. But its implementation is complex. Max-Log-MAP algorithm is a sub-optimization algorithm of turbo-codes, which offers good compromise between performance and complexity for implementation. The authors present a re configurable turbo decoder based on Max-Log-MAP algorithm implemented with sliding window method and pipeline architecture. The sliding window (SW) method can reduce memory size. Pipeline decoding schemes can reduce decoding delay and improve throughput. The structure we proposed can reduce decoding delay obviously. It can be used in wireless communication.

关键词： Pipelines Turbo codes Iterative decoding Delay Wireless communication Throughput Microelectronics Laboratories displays Forward error correction

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Design of On-Chip Debug Module Based on MCU

Design of On-Chip Debug Module Based on MCU

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yue-li Hu Ke-xin Zhang Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education Microelectronic Research and Development Center Shanghai China

A design method of embedded OCD (On-Chip Debugging) based on Intel 8051 MCU architecture is proposed. The OCD module named E-OCD-SFRB (Enhanced OCD module with SFR (Special Function Register) Breakpoint Function) is integrated into an existing MCU core, implementing several debugging function. The method we proposed is able to switch from running mode and debugging mode conveniently by controlling the debugging enable port and also enables controlling the MCU core in debugging mode by additional SFR. The function of SFR breakpoint is added, so we could trace the particular SFR, this is the reinforcement to the exiting OCD methods. The principles of E-OCD-SFR_B and detailed implemental method and simulation solution based on EDA platform are presented and validated. The simulation result indicates the completely observing and controlling to the core is achieved without any effect to original functions of the system.

关键词： Debugging Switches Clocks Ice system-on-a-chip Embedded system Emulation Monitoring Communication system control Registers

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A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts

A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Kailin Ren Yuan An Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.

关键词： HEMTs Logic gates Power system stability Threshold voltage Stability analysis Wide band gap semiconductors Gate leakage

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Characterization of Electrospun Zinc Oxide Nanofibers

Characterization of Electrospun Zinc Oxide Nanofibers

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2013 International Conference on Materials for Renewable Energy and Environment

作者： Yanyan Chang Nanhong Zhang Mengke Zhuang Xiuzhen Lu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT CenterSchool of Mechatronics Engineering and AutomationShanghai University

ISBN: (纸本)9781479933372

ZnO nanofibers were prepared by sol-gel processing and electrospinning ***(vinyl acetate)(PVA) and zinc acetate were used as precursors of PVA/zinc acetate composite *** composite and calcined nanofibers were characterized by Thermo gravimetric analysis(TGA),energy disperse spectroscopy(EDS),X-ray diractometer(XRD) and scanning electron microscopy(SEM),*** calcination of PVA/zinc acetate composite nanofibers at 400,600,and 800°C in air for 2 hours with heating rate of ～4°C/min,ZnO nanofibers were obtained *** ZnO nanofiber diameters were 207,135,158,and 200nm before and after calcination at 400,600,800°C,*** diameter of fibers reduced firstly and then increased with the rising calcination *** possible mechanism of it is also discussed.

关键词： ZnOnanofibers electrospinning Morphologies calcination

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Study on the influencing factors of thermal spreading resistance of HP-LED package

Study on the influencing factors of thermal spreading resist...

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The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

作者： Peng Song Jianhua Zhang Luqiao Yin Jinlong Zhang Yang Bai School of Mechatronics and Automation Shanghai University Key Laboratories of Advanced Display and S Key Laboratories of Advanced Display and System Applications(Shanghai University) Ministry of Educat

ISBN: (纸本)9781479947065

The optical performance and reliability of High power light emitting diode(HP-LED)devices can be affected by the junction temperature,while thermal resistance is one of the main factors which influence the p-n junction temperature,especially for the thermal spreading ***,Thermal analysis was conducted by differential structure functions combining with finite element analysis and calculation of thermal spreading resistance of HP-LED *** results show that thermal spreading resistance plays an important role on total thermal resistance of LED *** thermal spreading resistance shows a declined and then increased trend with the increase of substrate thickness;the contact area between the heating source and substrate is the main factor which influences thermal spreading resistance;It is beneficial to decrease the thermal spreading resistance when contact area ratio be ***-convection resistance becomes the main factor that influences total thermal resistance of HP-LED devices with the changing of substrate bottom area,while the influence of thermal spreading resistance is *** eccentric distance between chip and substrate plays a distinct impact on thermal spreading resistance and junction *** results of finite element simulation are in good agreement with calculation of thermal spreading resistance.

关键词： HP-LED thermal spreading resistance substrate thickness contact area ratio eccentric distance

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Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent

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Light(Science & applications) 2024年第7期13卷 1364-1371页

作者： Lingmei Kong Yun Luo Qianqian Wu Xiangtian Xiao Yuanzhi Wang Guo Chen Jianhua Zhang Kai Wang Wallace CHChoy Yong-Biao Zhao Hongbo Li Takayuki Chiba Junji Kido Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China. Institute of Nanoscience and Applications Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China. Department of Electrical and Electronic Engineering The University of Hong KongHong KongChina. Department of Physics and Lakeside AR/VR Laboratory International Joint Research Center for Optoelectronic and Engineering ResearchYunnan UniversityKunming 650091China. Experimental Center of Advanced Materials School of Materials Science and EngineeringBeijing Institute of TechnologyBeijing 100081China. Graduate School of Organic Materials Science Frontier Center for Organic MaterialsYamagata University4-3-16 JonanYonezawa 992–8510Japan

Light-emitting diodes(LEDs)based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies,but still suffer from severe instability driven by electric ***,we develop a stable,efficient and highcolor purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of *** LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission *** designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating,the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm,a peak luminance of over 176,000 cd m^(−2),a maximum external quantum efficiency of over 40%,and an operational half-lifetime of over 42,000 h.

关键词： diodes narrow quantum

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