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作者： Zhang, Zhilin Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai 200072 China Department of Material Sciences Shanghai University Shanghai 201800 China

ISBN: (纸本)9787561752289

Buffer layer is a crucial issue for driving voltage, efficiency and stability of OLEDs Several buffer layers were used in Top-OLED (TOLED) and Bottom-OLEDs (BOLED) for comparison. It is found that starburst material mMTDATA based devices exhibited much high current efficiency than others, while metal oxide MoOx showed superior characteristics of low driving voltage and much long lifetime of devices. By combining the measurement of work function of the metal oxide, using a method of contact potential difference previously reported by us, with the investigation of relative Hole-only or Electron-only devices, the mechanism of formed low driving voltage, high efficiency and high stability were analyzed.

关键词： Buffer layers

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Research of design-for-testability of CMOS image sensor

Research of design-for-testability of CMOS image sensor

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Zhaohui Ou Feng Lin Microelectronics Research & Development center Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education Shanghai University Shanghai China

CMOS image sensor has experienced explosive growth in recent years. As increasing of number of pixel scale and complexities of circuit, testability of image sensor chip has become an important problem that must be dealt with by both design and test engineers. A systematic approach to handle testability of CMOS image sensor circuits is urgently needed, because current test methods less address this domain. In this paper, a uniform and systematic approach is explored to the testability problem of CMOS image sensor, and it covers the image sensor defect analysis, fault model definition and test system design. The experimental data shows the fault coverage can be up to 99.3%.

关键词： Pixel CMOS image sensors Image sensors Circuit faults system-on-a-chip Photodiodes Noise

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Simulation of Bonding and Reliability for Micro-Led Array Based on Copper Pillar Bump

Simulation of Bonding and Reliability for Micro-Led Array Ba...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hao Fu Zhu Yang Xinhui Meng Hong Fan Xiuzhen Lu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

With the rapid development of automotive electronics and near-eye displays, more stringent requirements have appeared for the heterogeneous integration technology of Micro-LED. Copper pillar bumps, which offer enhanced electrical conductivity, thermal conductivity, and mechanical properties, can meet the demands for higher density and smaller size packaging in Micro-LED array applications. In Micro-LED system integration, bonding plays a critical role as the bonding conditions significantly influence the performance and reliability of Micro-LED. Consequently, it is essential to investigate the effects of bonding conditions on Micro-LED devices to ensure optimal performance and reliability of copper pillar bumps. A model with copper pillar bumps and Micro-LED chips was presented with a bonding simulation and parameter analysis performed in this paper. The finite element method was utilized to examine the thermal-mechanical coupling of one quarter of a $5 \times 5$ Micro-LED array model in this paper. The stress and deformation of the bumps during the bonding process and the effects of bonding conditions on the stress and deformation of the bumps was investigates.

关键词： Performance evaluation Deformation Conductivity Fatigue Bonding forces Thermal conductivity Copper Reliability Bonding Stress

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Finite element analysis of laser bonding process on organic light-emitting device

Finite element analysis of laser bonding process on organic ...

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Electronics Packaging Technology Conference (EPTC)

作者： Maoyu Li Yuanhao Huang Zikai Hua Jianhua Zhang Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education School of Mechatronics Engineering and Automation Shanghai University Shanghai China

Organic light-emitting device (OLED) is regarded as the potential application for future display. However, one of the bottlenecks is the OLED package issue, which results in short term device lifetime. Currently, a new laser bonding package process is proposed. In this paper, the investigation of transient temperature field analysis for the laser bonding process is presented. Finite element model is applied in ANSYS and compiled by subroutine of APDL. Moving heat flux and birth-death element method are both adopted in order to achieve the complicated bonding process. The laser bonding process comes to quasi-steady state after a short time of initial transient stage. Through a series parameters simulation, parameters as moving velocity, laser power and laser beam radius show a significant effect on bonding process. Furthermore, by case study, the optimization of the bonding parameters was carried out for future experimental investigation and validation.

关键词： Laser beams Glass Laser modes Bonding Power lasers Heating Surface emitting lasers

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A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT

A Novel Monolithically Integrated Structure of GaN-based Mic...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Yuan An Kailin Ren Xueying Xiu Zebin Xu Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai University Shanghai China

ISBN: (纸本)9781665495479

In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of metal-interconnects and reduction of parasitic capacitance. By TCAD simulations, the distribution of radiative recombination rate in this structure is investigated and the 2-D integrals of the radiative recombination rate for various device structure designs are compared. It is concluded that the integration structure with InGaN layers provides higher radiative recombination than that without InGaN layers. Device structure parameters are optimized, including Al content in AlGaN barrier layer, In content in InGaN layers, and thickness of InGaN layers.

关键词： Surface waves Photonic band gap Radiative recombination Switches HEMTs Wide band gap semiconductors Semiconductor process modeling

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Partial etched AlGaN layer on p-GaN HEMT with gate field plate and drain field plate for channel temperature reduction

Partial etched AlGaN layer on p-GaN HEMT with gate field pla...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Shuang Wu Luqiao Yin Kailin Ren Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

Self-heating effect of gallium nitride high electron mobility transistors (GaN HEMTs) has been a serious problem owing to their high-power and high-frequency operations, thus the method to optimize temperature was studied. In this work, the 2D temperature distribution model of p-GaN HEMT which has gate field plate and drain field plate is presented. Successively, etching AlGaN layer changes the two-dimensional electron gas (2DEG) density and the interface electric field between AlGaN layer and GaN buffer. The quantitative analysis of the etched region parameters which include etching length and etching depth were simulated systematically by using simulation software. The results show that etching AlGaN layer is helpful to reduce the peak temperature of active region and increase off-state breakdown voltage．

关键词： Temperature distribution Analytical models Thermal resistance HEMTs Logic gates Etching Wide band gap semiconductors

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Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter

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Chinese Physics B 2014年第7期23卷 727-731页

作者： Wei Na Guo Kun-Ping Zhou Peng-Chao Yu Jian-Ning Wei Bin Zhang Jian-Hua School of Materiais Science and EngineelJng Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China

We characterized the 6,12-bis{[N-（3,4-dimethylphenyl）-N-（2,4,5-trimethylphenyl）]amino} chrysene （BmPAC）, which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device （WOLED） with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer （BEML） in front of the orange light emitting layer （YEML） to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light.

关键词：蓝色荧光有机发光二极管光致发光白色有机发光器件发光体 WOLED 甲基苯基外部量子效率

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Research on the Models of OLED-On-Silicon Pixel Circuits

Research on the Models of OLED-On-Silicon Pixel Circuits

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Li-min Yan Hao Wang Key Laboratory of Advanced Display & System Applications Ministry of Education Shanghai University Microelectronic Research and Development Center Shanghai University Shanghai China

In modern information society, the display devices play an important role. Presently, Organic Light-Emitting Diode (OLED) has been emphasized and regarded as one of the best technology for its many advantages, such as active-matrix driver mode, high brightness, fast response time, high efficiency, wide visual angle, thin and light-weight etc. Much work of this paper has been done in AM-OLED technology, mainly focusing on the models of AM-OLED pixel circuit structure design and parameters assurance, AC-driving pixel circuit design and application. This research is prepared for integrated peripheral driving circuit design and application in the future.

关键词： Organic light emitting diodes Flat panel displays Thin film transistors Light emitting diodes Active matrix technology Brightness Threshold voltage Circuit synthesis Liquid crystal displays Active matrix organic light emitting diodes

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Improved stability of blue TADF organic electroluminescent diodes via OXD-7 based mixed host

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Frontiers of Optoelectronics 2021年第4期14卷 491-498页

作者： Weiguang LI Jie TANG Yanqiong ZHENG Junbiao PENG Jianhua ZHANG Bin WEI Xifeng LI Key Laboratory of Advanced Display and System Applications of Ministry of Education School of Mechatronic Engineering and AutomationShanghai UniversityShanghai 200072China School of Materials Science and Engineering Shanghai UniversityShanghai 200072China State Key Laboratory of Luminescent Materials and Devices South China University of TechnologyGuangzhou 510640China

Thermally activated delayed fluorescence(TADF)organic light-emitting diodes(OLEDs)have been demonstrated in applications such as displays and solid-state ***,weak stability and ineffi-cient emission of blue TADF OLEDs are two key bottlenecks limiting the development of solution processable displays and white light *** work presents a solution-processed OLED using a blue-emitting TADF small molecule bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone(DMAC-DPS)as an *** comparatively investigated the effects of single host poly(Nvinylcarbazole)(PVK)and a co-host of 60%PVK and 30%2,2′-(1,3-phenylene)-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole](OXD-7)on the device performance(the last 10%is emitter DMAC-DPS).The co-host device shows lower turn-on voltage,similar maximum luminance,and much slower external quantum efficiency(EQE)*** other words,device stability improved by doping OXD-7 into PVK,and the device impedance simultaneously and significantly reduced from 8.6103 to 4.2103 W at 1000 ***,the electroluminescent stability of the co-host device was significantly enhanced by adjusting the annealing temperature.

关键词： blue thermally activated delayed fluorescence organic light-emitting diode(TADF OLED) 2 2′-(1 3-phenylene)-bis[5-(4-tert-butylphenyl)-1 3 4-oxadiazole](OXD-7) bis[4-(9 9-dimethyl-9 10-dihydroacridine)phenyl]sulfone(DMAC-DPS) stability

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Design and implementation of CNC machine remote monitoring and controlling system based on embedded Internet

Design and implementation of CNC machine remote monitoring a...

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作者： Zhai, Wen-Zheng Hu, Yue-Li School of Mathematics and Information Engineering Taizhou University Taizhou 300070 China School of Mechatronics Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China School of Mechatronics Engineering and Automation Shanghai Key Laboratory of Power Station Automation Technology Shanghai University Shanghai 200072 China

ISBN: (纸本)9780769542126

The network control of CNC machine is the inexorable development trend of modern manufacturing industry, and the combination of embedded technology with network has become a research hot. This paper puts forward a novel design idea of remote monitoring and controlling system of CNC machine based on embedded Internet, presents its architecture principle design and software-hardware implementation procedure of the whole system. On the basis of embedded ARM Cortex-M0 microprocessor LPC1114, Ethernet controller ENC28J60, ported μC/OS-II and LwIP, an embedded Ethernet communication module is constructed to facilitate the communication between the upper industrial control PC, the field monitoring host and the various CNC machine Tools. After the hardware architecture design and software programming are completed, the system is tested and the results indicate that NC-RMCS functions have been realized. Also, the network control technology is practical and has higher application value. © 2010 IEEE.

关键词： Machine tools

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