Here, the solution-processed heterojunction structure Ta doped ZnSnO/InSnO (TaZTO/ITO) semiconductor thin film and TFTs have been fabricated on ALD deposited Al2O3. The effects of Ta doping on the structure, thickness...
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Cooling of microsystem electronic device is of great importance, according to increased heat dissipation based on Moore's law. Different solutions are proposed to overcome this issue. On-chip microchannel cooler i...
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ISBN:
(纸本)9781617821905
Cooling of microsystem electronic device is of great importance, according to increased heat dissipation based on Moore's law. Different solutions are proposed to overcome this issue. On-chip microchannel cooler implements micro-fabrication techniques to achieve large areas in small volume size by introducing micro channel CNT fins with smaller fin pitch. In this paper, a 3D model of this structure is simulated using computational fluid dynamics (CFD) in ANSYS® software, and effect of various parameters such as channel width and height is discussed to achieve an optimized cooling for this system.
Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quinolinato lithium (Liq) doped into 4'7-diphyenyl-1, 10-phenanthroline (BPhen) as ETL and a p-doping transpor...
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Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quinolinato lithium (Liq) doped into 4'7-diphyenyl-1, 10-phenanthroline (BPhen) as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane (F4-TCNQ) doped into 4, 4′, 4″-tris (3-methylphenylphenylamono) triphe-nylamine (m-MTDATA) are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency of organic light-emitting diodes are improved significantly after introducing an n-doping (BPhen: 33wt% Liq) layer as an electron transport layer (ETL) and a p-doping layer composed of m-MTDATA and F4-TCNQ as a hole transport layer (HTL). Compared with the control device (without doping), the current efficiency and power efficiency of the most efficient device (device C) are enhanced by approximately 51% and 89%, respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.
For this paper, we carried out molecular dynamics simulation to calculate the bonding energy of the metal-SWNT interface. Three kinds of metal, namely iron, nickel and gold, were studied. The results show that the iro...
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For this paper, we carried out molecular dynamics simulation to calculate the bonding energy of the metal-SWNT interface. Three kinds of metal, namely iron, nickel and gold, were studied. The results show that the iron-SWNT interface has the strongest bonding energy, and then nickel and gold. To confirm these results, tensile loading tests were also performed to study the breaking force of the metal-SWNT interface. The force needed to debond the metal-SWNT interface is at the order of nano-newton. The more adhesion energy the interface has, the bigger force that must be loaded to break the joint.
We investigated the characteristics of red OLEDs with two donors and one dopant. The EL efficiency of novel device increased two folds compared to devices with single host materials while the peak emission kept unchan...
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We investigated the characteristics of red OLEDs with two donors and one dopant. The EL efficiency of novel device increased two folds compared to devices with single host materials while the peak emission kept unchanged.
In conventional monolithic integrated half-bridge circuits, the High Side (HS) High Electron Mobility Transistor (HEMT) and Low Side (LS) HEMT can experience mutual interference due to differing substrate potentials. ...
In conventional monolithic integrated half-bridge circuits, the High Side (HS) High Electron Mobility Transistor (HEMT) and Low Side (LS) HEMT can experience mutual interference due to differing substrate potentials. While existing single PN-junction isolation structures have demonstrated effective isolation capabilities, ensuring this isolation typically necessitates the connection of the substrate to Vin, which poses challenges in terms of packaging and heat dissipation. This paper builds upon the foundation of single PN-junction isolation substrate structures and introduces a novel Double PN-junction Isolation Substrate (DJIS) structure. Sentaurus TCAD simulations have substantiated the positive correlation between trench depth and substrate breakdown voltage. The assessment of the isolation performance of DJIS is based on the observation of the impact of different VSW on threshold voltage shifts. It indicate that the DJIS structure ensures robust withstand voltage and isolation capabilities, whether the substrate potential is grounded or connected to Vin. Moreover, the incorporation of a P+ Si layer at the bottom enhances the elastic modulus and hardness of DJIS, thus elevating the device's reliability. The structure proposed in this paper offers a fresh perspective for achieving isolation in monolithic integrated half-bridge circuits.
Computer-generated holography (CGH) is one of promising technologies in wavefront engineering, and multiplexing holography brings more information channels. Inspired by code division multiplexing (CDM) in communicatio...
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Color holographic display is one of the most promising future display technologies. Introducing metasurfaces to holographic display brings more possibilities. Spatially multiplexing multicolor holography is a common w...
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A waveguide eyeglass system integrating freeform elements and volume gratings have been proposed and designed. The simulation results show that the hybrid system can show full color images with FOV 31.56°×24...
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Optical tracking systems (OTSs) have been widely used in clinical practice to fulfill the high precision needs of contemporary surgery. The markers that are defaced in the production or surgery reduce the accuracy and...
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