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2012 International Applied Mechanics, MechatronicsAutomation and system Simulation Meeting, AMMASS 2012

作者： Li, Chunya Li, Xifeng Chen, Longlong Shi, Jifeng Zhang, Jianhua Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters. © (2012) Trans Tech Publications, Switzerland.

关键词： Plasma enhanced chemical vapor deposition

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An efficient VLSI architecture of sub-pixel interpolator for AVS encoder

An efficient VLSI architecture of sub-pixel interpolator for...

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2008 9th International Conference on Signal Processing, ICSP 2008

作者： Guanghua, Chen Xiaoli, Zhang Ming, Liu Jingming, Zhu Shiwei, Ma Weimin, Zeng Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

ISBN: (纸本)9781424421794

Interpolation is the main bottleneck in AVS real-time high definition video encoder for its high memory bandwidth and large calculation complexity caused by the new coding features of variable block size and 4-tap filter. In this paper, an efficient VLSI architecture of interpolation supporting AVS Baseline@L4 is presented. Vertical redundant data reuse, horizontal redundant data reuse and sub-pixel data reuse schemes are presented to reduce memory bandwidth and processing cycle. The separated 1-D interpolation filters are used to improve throughput and hardware utilization. The proposed design is implemented on the Vertex4 XC4VLX200 field programmable gate array with operating frequency of 150MHz and can support 1080p (1920X1080) 30fps AVS real-time encoder. It is a useful intellectual property design for real-time high definition video application. © 2008 IEEE.

关键词： Pixels

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Compressed sensing based channel estimation for fast fading OFDM systems

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Journal of systems Engineering and Electronics 2010年第4期21卷 550-556页

作者： Xiaoping Zhou Yong Fang Min Wang Key Laboratory of Specialty Fiber Optics and Optical Access Networks School of Communication and Information Engineering Shanghai University Shanghai 200072 P. R. China Key Laboratory of Advanced Display and System Applications Shanghai 200072 P. R. China

A compressed sensing（CS） based channel estimation algorithm is proposed by using the delay-Doppler sparsity of the fast fading channel.A compressive basis expansion channel model with sparsity in both time and frequency domains is *** pilots in accordance with a novel random pilot matrix in both time and frequency domains are sent to measure the delay-Doppler sparsity *** relatively nonzero channel coefficients are tracked by random pilots at a sampling rate significantly below the Nyquist *** sparsity channels are estimated from a very limited number of channel measurements by the basis pursuit *** proposed algorithm can effectively improve the channel estimation performance when the number of pilot symbols is reduced with improvement of throughput efficiency.

关键词： compressed sensing sparse channel channel estimation fast fading.

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Effects of substrate temperature on the properties of silicon nitride films by PECVD

Effects of substrate temperature on the properties of silico...

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2012 Workshop on Inorganic Thin Films and Coatings

作者： Li, Chunya Li, Xifeng Chen, Longlong Shi, Jifeng Zhang, Jianhua Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

ISBN: (纸本)9783037855669

Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%. © (2013) Trans Tech Publications, Switzerland.

关键词： Plasma enhanced chemical vapor deposition

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The study of microcrystalline silicon thin films prepared by PECVD

The study of microcrystalline silicon thin films prepared by...

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2012 Workshop on Inorganic Thin Films and Coatings

作者： Li, Chunya Zhang, Hao Li, Jun Li, Xifeng Zhang, Jianhua Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

ISBN: (纸本)9783037855669

Under different growth conditions, microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD). We report the systematic investigation of the effect of process parameters (hydrogen dilution, substrate temperature, forward power, reaction pressure, et al.) on the growth characteristics of microcrystalline silicon thin films. Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results. Optimizing the process parameters, the highest crystalline volume fraction of microcrystalline silicon films was achieved. It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa, H2/SiH4 flow ratio of 800sccm/10sccm, power of 400 W and substrate temperature of 350 °C. © (2013) Trans Tech Publications, Switzerland.

关键词： Thin films

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Synthesis and application of a novel 9,9-diethyl-1,2-diaryl-1,9-dihydrofluoreno[2,3-d]imidazole for blue organic light emitting diode

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Chinese Chemical Letters 2020年第1期31卷 64-66页

作者： Xueying Wang Zhangcheng Liao Tianqi Wang Haixia Lin Zixing Wang Yongmei Cui Department of Chemistry College of Sciences.Shanghai UniversityShanghai 200444China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

Two novel 2-(4-(9,9-disubstitued-9 H-fluoren-2-yl)phenyl)-9,9-diethyl-l-phenyl-1,9-dihydrofluoreno-[2,3-d]imidazole derivatives 2 a and 2 b were synthesized and *** photophysical and electrochemical properties,thermal stability property,and electroluminescence(EL)performance of 2 b were *** fabricated device based on 2 b doping into 4,4’-N,N’-dicarbazole-biphenyl(5%)as an emitter present a maximum brightness of 1272 cd/m^2 at 4 V with the CIE coordinate of(0.1590,0.0465).

关键词： Fluorene Imidazole Photoluminescence Electroluminescence

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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

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Chinese Physics B 2010年第3期19卷 456-461页

作者：曹进洪飞邢菲菲顾文郭新安张浩魏斌张建华王军 Key Laboratory of Advanced Display and System Application(Shanghai University) Special Display Technology(Hefei University of Technology) Ministry of Education Chemistry Department College of SciencesShanghai University

This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.

关键词： n-channel heterojunction effect surface modification

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Electron mobility of 4,7-diphyenyl-1,10-phenanthroline estimated by using space-charge-limited currents

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Journal of Applied Physics 2008年第1期103卷 014509-014509-4页

作者： Khan, M.A. Xu, Wei Khizar-Ul-Haq Bai, Yu. Jiang, X.Y. Zhang, Z.L. Zhu, W.Q. Zhang, Z.L. Zhu, W.Q. Department of Materials Science Shanghai University Jiading 201800 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

The electron mobility of 4,7-diphyenyl-1,10-phenanthroline (BPhen) at various thicknesses (50-300 nm) has been estimated by using space-charge-limited current measurements. The measured bulk mobility is in excellent agreement with results from time-of-flight method. It has been observed that the electron mobility of BPhen approaches its true value when the thickness is more than 150 nm. The estimated electron mobility of BPhen at 300 nm is found to be 3.4× 10-4 cm2 V s (at 0.3 MVcm) with weak dependence on electric field. For thickness typical of organic light-emitting devices, the electron mobility of BPhen is also investigated. © 2008 American Institute of Physics.

关键词： Electron mobility

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Characterization of electrospun zinc oxide nanofibers

Characterization of electrospun zinc oxide nanofibers

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2013 International Conference on Materials for Renewable Energy and Environment, ICMREE 2013

作者： Chang, Yanyan Zhang, Nanhong Zhuang, Mengke Lu, Xiuzhen Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center Shanghai University Shanghai China

ISBN: (纸本)9781479933365

ZnO nanofibers were prepared by sol-gel processing and electrospinning technique. Poly (vinyl acetate) (PVA) and zinc acetate were used as precursors of PVA/ zinc acetate composite fibers. The composite and calcined nanofibers were characterized by Thermo gravimetric analysis (TGA), energy disperse spectroscopy (EDS), X-ray diractometer (XRD) and scanning electron microscopy (SEM), respectively. After calcination of PVA/zinc acetate composite nanofibers at 400, 600, and 800°C in air for 2 hours with heating rate of ∼4°C/min, ZnO nanofibers were obtained successfully. The ZnO nanofiber diameters were 207, 135, 158, and 200nm before and after calcination at 400, 600, 800°C, respectively. The diameter of fibers reduced firstly and then increased with the rising calcination temperature. The possible mechanism of it is also discussed. © 2013 IEEE.

关键词： Electrospinning

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EXPERIMENTAL STUDY ON THE VORTEX FORMATION AND ENTRAINMENT CHARACTERISTICS FOR A ROUND TRANSVERSE JET IN SHALLOW WATER

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Journal of Hydrodynamics 2009年第3期21卷 386-393页

作者： FAN Jing-yu ZHANG Yan WANG Dao-zeng Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai 200072 China

The vortex formation and entrainment characteristics for a round transverse jet in shallow water were experimentally investigated by means of a combination of LIF flow visualization and PIV measurement. A scarf vortex wrapped around the main body of the jet is formed in the near-wall region due to the interaction between the resulting wall jet and sufficiently shallow crossflow, with some more or less unsteady flow properties and with spreading ranges as functions of both the velocity ratio and the water depth within the near field. The entrainment of the ambient crossflow fluid into the jet main body is closely associated with the time-evolving features of the shear layer between the jet and surrounding fluid as well as the induced vortical structures near the wall. In the case of slight impingement upon the wall, the interaction between the jet shear layer and the weak, unstable scarf vortex gives rise to an appreciable local entrainment enhancement, confined in the near-wall region in the vicinity of the stagnation point. While in the case of intense impingement upon the wall, the well-organized and stable scarf vortex gives rise to a greatly enhanced entrainment and a greatly increased lateral spreading rate nearly throughout the overall near field as compared to the conventional wall jet. In addition, the entrainment of the ambient crossflow fluid by the scarf vortex in this case occurs largely on the surface of the unique spiral roller structure by itself due to the presence of smaller and unorganized eddies, and accordingly the scarf vortex is likely to keep its spiral roller structure steadily to a relatively great downstream distance within the near field.

关键词： transverse jet shallow water vortex formation entrainment PIV measurement

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