As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi...
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In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical cros...
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A traditional bonding structure with indium bumps and a new bonding structure with passivation layer using Cu bumps were simulated to bond Micro-LED and substrate. Anand model and bilinear isotropic hardening model we...
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Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast *** an extension of degree of freedom in optical devices based on low-dimensional materials m...
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Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast *** an extension of degree of freedom in optical devices based on low-dimensional materials may be a way ***,the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent *** polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states,i.e.,conventional soliton and noise-like *** laser state was switchable in the single fiber laser with a mechanism revealed by numerical *** coding was further demonstrated in this platform by employing the laser as a codable light *** work proposed an approach for ultrafast laser state active controlling with low-dimensional material,which offers a new avenue for constructing tunable on-fiber devices.
With the rapid development of automotive electronics and near-eye displays, more stringent requirements have appeared for the heterogeneous integration technology of Micro-LED. Copper pillar bumps, which offer enhance...
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ISBN:
(数字)9798331541149
ISBN:
(纸本)9798331541156
With the rapid development of automotive electronics and near-eye displays, more stringent requirements have appeared for the heterogeneous integration technology of Micro-LED. Copper pillar bumps, which offer enhanced electrical conductivity, thermal conductivity, and mechanical properties, can meet the demands for higher density and smaller size packaging in Micro-LED array applications. In Micro-LED system integration, bonding plays a critical role as the bonding conditions significantly influence the performance and reliability of Micro-LED. Consequently, it is essential to investigate the effects of bonding conditions on Micro-LED devices to ensure optimal performance and reliability of copper pillar bumps. A model with copper pillar bumps and Micro-LED chips was presented with a bonding simulation and parameter analysis performed in this paper. The finite element method was utilized to examine the thermal-mechanical coupling of one quarter of a $5 \times 5$ Micro-LED array model in this paper. The stress and deformation of the bumps during the bonding process and the effects of bonding conditions on the stress and deformation of the bumps was investigates.
With the developments of artificial intelligence and image processing technology, the study of multiple vision tasks has become a hot topic in the field of computer vision, and the key to implementing vision tasks lie...
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Holographic 3D display is highly desirable for numerous applications ranging from medical treatments to military ***,it is challenging to simultaneously achieve large viewing angle and high-fidelity color reconstructi...
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Holographic 3D display is highly desirable for numerous applications ranging from medical treatments to military ***,it is challenging to simultaneously achieve large viewing angle and high-fidelity color reconstruction due to the intractable constraints of existing ***,we conceptually propose and experimentally demonstrate a simple and feasible pathway of using a well-designed color liquid crystal grating to overcome the inevitable chromatic aberration and enlarge the holographic viewing angle,thus enabling large-viewing-angle and color holographic 3D *** use of color liquid crystal grating allows performing secondary diffraction modulation on red,green and blue reproduced images simultaneously and extending the viewing angle in the holographic 3D display *** principle,a chromatic aberration-free hologram generation mechanism in combination with the color liquid crystal grating is proposed to pave the way for on such a superior holographic 3D *** proposed system shows a color viewing angle of~50.12°,which is about 7 times that of the traditional system with a single spatial light *** work presents a paradigm for achieving desirable holographic 3D display,and is expected to provide a new way for the wide application of holographic display.
P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact...
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P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.
Colloidal quantum dots/perovskites based light-emitting diodes (QLEDs/PeLEDs) have attracted extensive attention for lighting and displayapplications because of their excellent advantages, such as narrow emission ban...
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Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective ...
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