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第七届全国暨华人有机分子和聚合物发光与光电特性学术会议

作者： Fan Zhou Huaping Lin Jun Li X.Y.Jiang Z.L.Zhang Jianhua Zhang School of Materials Science and Engineering Shanghai University Shanghai 200072 China School of Materials Science and Engineering Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University 200072China Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University 200072China

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A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

A Monolithically Integrated Voltage Reference based on AlGaN...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Luqiao Yin Jianhua Zhang Kailin Ren Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) School of Microelectronics Shanghai University Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V REF ) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V REF of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.

关键词： Temperature sensors Temperature distribution Circuits HEMTs Logic gates Threshold voltage Generators Wide band gap semiconductors MODFETs Aluminum gallium nitride

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被动标量湍流的约束亚格子模型

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Acta Mechanica Sinica 2023年第4期39卷 184-194页

作者：黄鹏陈宽宇彭怀午 Hsu-Chew Lee 史一蓬肖左利陈十一万敏平 Guangdong Provincial Key Laboratory of Turbulence Research and Applications Department of Mechanics and Aerospace EngineeringSouthern University of Science and TechnologyShenzhen518055China Guangdong-Hong Kong-Macao Joint Laboratory for Data-Driven Fluid Mechanics and Engineering Applications Southern University of Science and TechnologyShenzhen518055China State Key Laboratory for Turbulence and Complex System College of EngineeringPeking UniversityBeijing100871China Northwest Survey and Design Research Institute Xi’an710065China Eastern Institute for Advanced Study Ningbo315200China

本文采用约束大涡模拟(C-LES)模型来模拟湍流中的被动标量.通过施加一个基于被动标量大涡模拟(LES)中标量方差通量标度不变量的物理约束来计算动态混合非线性模型(MNLM)的系数.将约束亚格子(SGS)模型与不同的SGS模型在不可压各向同性湍... 详细信息

本文采用约束大涡模拟(C-LES)模型来模拟湍流中的被动标量.通过施加一个基于被动标量大涡模拟(LES)中标量方差通量标度不变量的物理约束来计算动态混合非线性模型(MNLM)的系数.将约束亚格子(SGS)模型与不同的SGS模型在不可压各向同性湍流被动标量中进行比较.此外,C-LES模型减少了SGS标量方差通量在惯性-对流尺度以及较大的黏性-扩散尺度上的变化.先验测试表明,C-LES模型在预测SGS标量通量的方向和大小方面表现最好.此外,C-LES模型减少了SGS标量方差通量在惯性-对流范围内以及粘性-扩散范围内大尺度的变化.在后验测试中,与传统的动态Smagorinsky(DSM)和MNLM模型相比,C-LES模型在预测标量谱和内部间歇性的演变中表现明显更好.这些结果表明,在SGS模型中施加物理约束是在被动标量湍流大涡模拟中的一种有前途的方法.

关键词： SGS模型亚格子模型 LES模型各向同性湍流物理约束扩散范围非线性模型动态混合

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基于晶体塑性的辐照金属材料局部化颈缩和吕德斯带的模拟研究

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Acta Mechanica Sinica 2023年第4期39卷 132-146页

作者：付家琪刘文斌隋昊男程杨洋段慧玲 State Key Laboratory for Turbulence and Complex System Department of Mechanics and Engineering ScienceThe Beijing Innovation Center for Engineering Science and Advanced TechnologyCollege of EngineeringPeking UniversityBeijing100871China Key Laboratory of High Energy Density Physics Simulation Center for Applied Physics and Technologyand Inertial Fusion Sciences and ApplicationsCollaborative Innovation Center of Ministry of EducationPeking UniversityBeijing100871China

金属材料中,颈缩失稳通常由表面缺陷或材料不均匀性等潜在扰动引起并随着微结构的演化进一步发展.本文将构型扰动法与考虑辐照效应的晶体塑性本构关系相结合,模拟了辐照前后局部化颈缩和吕德斯带等现象.通过考虑模拟局部化变形中扰动的... 详细信息

金属材料中,颈缩失稳通常由表面缺陷或材料不均匀性等潜在扰动引起并随着微结构的演化进一步发展.本文将构型扰动法与考虑辐照效应的晶体塑性本构关系相结合,模拟了辐照前后局部化颈缩和吕德斯带等现象.通过考虑模拟局部化变形中扰动的必要性,发现了外在的几何缺陷和内禀的微结构演化在颈缩过程中的竞争关系.此外,以纯金属铜和奥氏体不锈钢为例研究了辐照硬化效应对颈缩失稳的影响.结果表明,流动应力的增加和功硬化能力的降低是均匀延伸率下降的原因,辐照效应导致的织构软化作用可以忽略.为了解释辐照后低碳钢下屈服点和吕德斯应变同时增加的现象,一种位错脱钉扎和位错与辐照缺陷的交互作用相耦合的塑性变形机制被提出并结合修正的流动方程,很好地模拟出包含屈服下降、应力平台、应变扩展和应变硬化等特征的吕德斯带现象.其中,位错与辐照缺陷的相互作用也可以解释辐照后纯金属材料中发现的扩散颈缩现象.我们的模拟结果既阐明了几何缺陷在颈缩失稳中的重要作用,也为辐照金属中常见的宏观塑性失稳现象提供了清晰的物理图像.

关键词：吕德斯带金属材料奥氏体不锈钢晶体塑性下屈服点流动应力几何缺陷均匀延伸率

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Carbon nanotubes as cooling fins in microelectronic systems

Carbon nanotubes as cooling fins in microelectronic systems

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IEEE Conference on Nanotechnology

作者： Yifeng Fu Teng Wang Johan Liu Xiaojing Wang Yan Zhang SMIT Center & Bionano Systems Laboratory Department of Microtechnology and nanoscience Chalmers University of Technology Gothenburg Sweden Key Laboratory of Advanced Display and System Shanghai University Shanghai China

ISBN: (纸本)9781424448326

Compared to conventional metal heat sinks, CNT-based microfins have exceptional advantage to drag heat out from electronic components due to the unique thermal and mechanical properties of the material. This paper will review the state of CNTs applied as cooling fins in microelectronic systems. The latest progresses will be presented.

关键词： Carbon nanotubes Microelectronics Heat sinks Laboratories Electronics cooling Thermal management of electronics Thermal management Heat engines Electronic components Inorganic materials

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Flexible Active-Matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Heat removal of microchannel coolers with Carbon NanoTube suspension as the coolant

Heat removal of microchannel coolers with Carbon NanoTube su...

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Electronics system-Integration Technology Conference, ESTC

作者： Yi Fan Yifeng Fu Teng Wang Johan Liu Yan Zhang Xiaojing Wang Zhaonian Cheng Key Laboratory of Advanced Display& System Applications (Ministry of Education) SMIT Center and School of AutomatIon and MechanIcal Engineering ShanghaiUniversity China SMIT Center and Bionano Systems Laboratory Department of Microtechnology and Nanosciences (MC2)Chalmers University of Technology Gothenburg Sweden

The present work aims to study the heat dissipation capability of microchannel coolers with the coolant made of carbon NanoTube (CNT) suspension, which has been reported to have unusually good thermal properties. In this study, silicon microchannel coolers were prepared by the technique of deep ion reactive etching (DIRE). Stable and homogeneous CNT suspension was also produced. Meanwhile, a closed-loop cooling test system was developed to investigate the heat removal of the silicon microchannel cooler with different coolants. The experimental setup included a test module, a minipump for providing controllable flow, and a fan system for cooling the circular fluid. Beside the inlet and outlet of the test module, two thermocouples and pressure gauges were set up to measure the temperature and pressure of the fluids. The measurement results of the heat removal of the silicon microchannel cooler using CNT suspension and pure water as coolant were obtained. The results show that the microchannel cooler with CNT suspension as coolant could strengthen the heat removal capability of microchannel cooler. In addition to heat transfer enhancement, the microchannel cooler with CNT suspension coolant did not produce extra pressure drop.

关键词： Microchannel Carbon nanotubes Coolants Silicon Cooling system testing Temperature measurement Etching Fluid flow control Temperature control

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Study on Thermal Characteristics of LED Module with Different Substrate Parameters

Study on Thermal Characteristics of LED Module with Differen...

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第十一届中国国际半导体照明论坛

作者： Peng Song Gang Wang Guoqiao Tao Luqiao Yin Key Lab of Advanced Display and System Applications of Ministry of Education Mentor Graphics (Shanghai) Electronic Technology Co. Ltd. Philips (China) Investment Co. Ltd.

Light emitting diode(LED) is widely used due to its energy-saving, environment friendly and long life and so on. But the low electro-optic conversion efficiency and the pursuit of low cost always make the LED devices wording under a high junction temperature condition, this can significantly affect the reliability of LED device. As a result, it is necessary to carry out the heat dissipation performance improvements by the structure design and optimization of LED device. The thermal resistance characteristics of LED were studied by combining T3 ster thermal resistance test and the theoretical calculation. Two groups of LED devices with different printed circuit board substrate parameters(with different copper layer thickness and different substrate area) are tested, the results show that the thermal resistance of LED with different substrate area showed a difference as high as 13.3%. For this group, the dimension difference is the two screw holes. The thermal resistance of LED with different copper layer thickness(35μm and 70 μm) shows a difference as high as 32%. The theoretical calculation analysis show that the area of substrate as cooling area can affect the thermal spreading resistance and convection thermal resistance, especially the thickness of copper layer has a great influence on the thermal spreading resistance, the difference of thermal resistance mainly be caused by the difference of thermal spreading resistance;Thermal spreading resistance decrease significantly with the increase of the copper layer thickness. The theoretical calculation analysis also shows that with the same substrate, the thermal spreading resistance can be obviously affected by the layout of the LED device on the substrate. So in order to improve the heat dissipation performances of LED device, not only the choice of material with high thermal conductivity, but the device structure and the layout optimizing of the LED device on the substrate is also important.

关键词： LED thermal resistance thermal spreading resistance thickness of substrate

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Polymer nanofiber based continuous metal phase composite for thermal management applications

Polymer nanofiber based continuous metal phase composite for...

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Electronics system-Integration Technology Conference, ESTC

作者： Björn Carlberg Johan Liu Li-Lei Ye Department of Microtechnology and Nanoscience (MC2) Chalmers University of Technology Gothenburg Sweden Key Laboratory of Advanced Display and System Applications & SMIT Center Shanghai University Shanghai China SHT Smart High-Tech AB Gothenburg Sweden

A new composite design approach for thermal interface materials is presented. A porous electrospun nanofiber network composed of temperature stable polyimide was infiltrated with liquid phase indium at a pressure of 30 MPa. The polymer phase defines composition and geometry, while the continuous metal phase gives binding to surfaces and high thermal conductivity. The composite was characterized by assembly of tri-layer copper/TIM/copper sandwich structures and subsequent xenon flash measurements extracting the thermal properties of the intermediate TIM layer. The interfacial contact resistance was found to be 8 Kmm 2 /W and the thermal conductivity was 28 W/mK, indicating the potential for use in thermal management applications.

关键词： Thickness measurement Copper Materials reliability Detectors Thermal conductivity Phase measurement Polymers

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Experimental Measurements for Mechanical and Electrical Conductive Properties of CNT Bundles

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Sixth International Conference on Nonlinear Mechanics

作者： Yan Zhang Ying-jie Zhou Jing-yu Fan Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education & SMIT CenterSchool of Mechatronics Engineering and AutomationShanghai University Shanghai Institute of Applied Mathematics and Mechanics Shanghai University BNSL Department of Microtechnology and NanoscienceChalmers University of Technology

ISBN: (纸本)9781605951096;1605951099

＜正＞With the miniaturization and multifunction trend in consumer electronics and other numerous applications,the characteristic sizes of chips,components and devices become smaller and smaller while the power dissipation and the associated heat flux density increase *** nanotube（CNT） has become a promising material due to its mechanical and conductive *** this paper, the CNT bundles on silicon chip have been experimentally investigated with respect to both the mechanical behavior under loading and the electrical conductivity as flip-chip interconnects.

关键词： Power dissipation conductivity Mechanical Testing and Measurement ELECTROMECHANICAL Bundles consumer electronics miniaturization Mechanical properties heat flux density Appliances center-notch tensile specimen Electric conductivity loading LOADING

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