With the development of IoT and AI technologies, brain-like synaptic devices with precise weight modulation of synaptic plasticity and controllable preparation are of great significance for developing neuromorphic com...
详细信息
ISBN:
(数字)9798331541149
ISBN:
(纸本)9798331541156
With the development of IoT and AI technologies, brain-like synaptic devices with precise weight modulation of synaptic plasticity and controllable preparation are of great significance for developing neuromorphic computing and intelligent sensing technologies. In this paper, we design a series of side-gate electrolyte transistors with varying gate-channel distances and systematically examine the structural design effect on synaptic weight modulation. A synaptic transistor device with an ultra-low subthreshold swing of 89.8 mV/dec has been successfully achieved by optimizing the gate-channel design. Additionally, Further characterizations of the short-term synaptic plasticity and long-term synaptic plasticity of synaptic transistors uncover the flexible modulation of the gate-channel distance-dependent synaptic weight gain behaviors, which span from as low as 6.1 to as high as 87.5 under 50 successive stimuli. The results of this work provide a reliable solution for the design and preparation of high-performance synaptic devices and lay the foundation for high-precision neural networks and intelligent sensing technologies.
Micro-LED displays have garnered widespread attention due to their high resolution, high brightness, and long lifespan. However, the heterogeneous integration and the reliability of Micro-LEDs pose significant challen...
详细信息
ISBN:
(数字)9798331541149
ISBN:
(纸本)9798331541156
Micro-LED displays have garnered widespread attention due to their high resolution, high brightness, and long lifespan. However, the heterogeneous integration and the reliability of Micro-LEDs pose significant challenges for their commercialization. As Micro-LED products develop towards larger sizes and narrower pitches, the Au/In bonding process has become a prevalent strategy for achieving high-resolution interconnections. To address the issue of the life span being affected by the plastic deformation of indium bumps, which ultimately fail in the form of yielding, an Au/In-resin hybrid bonding technique to improve the reliability of high-resolution Micro-LEDs was proposed in this paper. The reliability of the flip-chip bonding structure of a $4\times 4$ Micro-LED array was analyzed using ANSYS simulation software and finite element methods. The Anand unified viscoplastic constitutive model was employed for both indium bumps and the encapsulating resin. The model was subjected to temperature cycling loads ranging from $-55^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ in accordance with the JEDEC temperature cycling standard. The Coffin-Manson fatigue life prediction model, which accounts for plastic strain in materials, was introduced to estimate the thermal cycling fatigue life of the Micro-LED interconnection structures. The equivalent plastic strain range of hybrid bonding device was $6.708\times 10^{-3}$ , surpassing the $7.59\times 10^{-3}$ observed in device with conventional bump bonding. The hybrid bonding device exhibited a thermal cycling life of 12747 cycles, which was about 36% longer than that of the bump bonding device. It suggests that resin helps to extend the thermal cycling life of the device and enhance its reliability.
Micro-LED has attracted more attention due to its unique photoelectric properties, such as high brightness, high energy efficiency, high stability and other characteristics, which facilitate its widespread application...
详细信息
ISBN:
(数字)9798331541149
ISBN:
(纸本)9798331541156
Micro-LED has attracted more attention due to its unique photoelectric properties, such as high brightness, high energy efficiency, high stability and other characteristics, which facilitate its widespread application. Bumps can be used for electrical connections and heat transfer paths as well as structural supports that affect the reliability of Micro-LED devices. Hybrid bonding enhances the reliability and longevity of electronic devices while also ensuring the compatibility of bonding process. Currently, there is limited finite element simulation research on Micro-LEDs, particularly regarding electrothermal and mechanical multi-physical field simulations. Herein, the electrothermal and mechanical coupling of a quarter of a 6×6 Micro-LED array model was analyzed using COMSOL Multiphysics simulation software and the finite element method. The analysis primarily focused on the stress and displacement of bumps in the hybrid bonding model. The optimal combinations of different bump materials (indium-In, tin-Sn) and filling materials (epoxy resin-EP and benzocyclobutene-BCB) were obtained. The results indicate that BCB is a more suitable filling material, while In is preferable as a bump material. Furthermore, variations in thermal stress and displacement of cylindrical and circular-truncated cone bumps of different aspect ratios were analyzed. This paper provides an idea for optimizing the fabrication of Micro-LED bumps and bonding processes.
Micro-LED is a promising candidate of the next generation display technology. The size effect caused by sidewall surface traps is a serious issue that restricts its industrialization progress. However, the current res...
详细信息
Micro-LED is a promising candidate of the next generation display technology. The size effect caused by sidewall surface traps is a serious issue that restricts its industrialization progress. However, the current research on the size effect of micro-LED is limited to the reduce of quantum efficiency and luminous intensity with decreased pixel size, but there is few research on the mechanism of the transient switching characteristics of Micro-LED affected by sidewall surface traps. In this paper, the size effect of GaN based micro-LEDs is studied by TCAD simulation. The decrease of quantum efficiency is attributed to the depletion effect of the sidewall traps induced by dry etching, the enhancement of SRH non-radiative recombination, and the lateral current component caused by sidewall traps capturing carriers. In addition, the sidewall trap density and trap energy level of micro-LEDs with 10 μm pixel size were varied to study their influence on the transient switching characteristics of micro-LEDs. This work provides a design guideline for the process control of micro-LEDs.
Self-heating effect of gallium nitride high electron mobility transistors (GaN HEMTs) has been a serious problem owing to their high-power and high-frequency operations, thus the method to optimize temperature was stu...
详细信息
Self-heating effect of gallium nitride high electron mobility transistors (GaN HEMTs) has been a serious problem owing to their high-power and high-frequency operations, thus the method to optimize temperature was studied. In this work, the 2D temperature distribution model of p-GaN HEMT which has gate field plate and drain field plate is presented. Successively, etching AlGaN layer changes the two-dimensional electron gas (2DEG) density and the interface electric field between AlGaN layer and GaN buffer. The quantitative analysis of the etched region parameters which include etching length and etching depth were simulated systematically by using simulation software. The results show that etching AlGaN layer is helpful to reduce the peak temperature of active region and increase off-state breakdown voltage．
In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of...
详细信息
This work presents the circuit design of an amplifier using organic thin-film transistors (OTFTs). The circuit is constructed based on the common-drain stage incorporating positive feedback. The proposed differential ...
详细信息
Computer-generated holography (CGH) is one of promising technologies in wavefront engineering, and multiplexing holography brings more information channels. Inspired by code division multiplexing (CDM) in communicatio...
详细信息
Color holographic display is one of the most promising future display technologies. Introducing metasurfaces to holographic display brings more possibilities. Spatially multiplexing multicolor holography is a common w...
详细信息
暂无评论