The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）...
详细信息
The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）：[6,6]-phenyl C61-butyric acid methyl ester （P3HT：PCBM） polymer solar cell, we studied the effect of the cathode buffer layer （CBL） between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode （OLED） were employed as the CBL in the P3HT：PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline （Bphen）, and 8-hydroxyquinolatolithium （Liq） can be used as CBL to efficiently improve the device performance of the P3HT：PCBM polymer solar cells. The P3HT：PCBM devices employed various CBLs possess power conversion efficiencies （PCEs） of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen：Cs2CO3 and Bphen：Liq as the CBL, the PCE of the P3HT：PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.
The fluid dispensing with a controllable method is one of the key technologies in electronic packaging. The the higher accuracy and consistency boosts the emergence of the new fluid dispensing technologies. This paper...
详细信息
In this paper, we propose a new pixel structure for the organic Light Emitting Diode (OLED) 0.65 inch SVGA resolution micro-display with 8 bit gray level. The proposed pixel structure is composed of 4 MOSFETS and one ...
详细信息
This study reports highly efficient and stable quantum dot light-emitting diodes (QLEDs) based on solution processed metal-oxide films as hole injection layer (HIL). The best-performing device with Cu:NK) HIL exhibits...
详细信息
We improved the current efficiencies of Organic Light-emitting diodes from 50 cd/A to 77.7 and 65.4 cd/A by employing Ag-thin-film and Al2O3-thin-film longitudinal wave guides with the same device structures, respecti...
详细信息
This paper discusses a kind of optimal method used for searching flat panel display （FPD） scanning matrix. The method adopts bionic algorithm： genetic algorithm （GA） and particle swarm optimization （PSO） algori...
详细信息
This paper discusses a kind of optimal method used for searching flat panel display （FPD） scanning matrix. The method adopts bionic algorithm： genetic algorithm （GA） and particle swarm optimization （PSO） algorithm. The method using single GA is more time-consuming, and the search efficiency is low in later evolution; the PSO algorithm is easily falling into the local optimal solution and appears the premature convergent phenomenon. Hence, a hybrid approach of GAPSO is found to optimize the search for high grayscale weights scanning matrix. Finally in the acceptable time, it finds a weight scanning matrix （WSM） of 256 gray scales with Matlab, whose scanning efficiency reaches 94.73% and the linearity is very good.
Amorphous InGaZnO （a-IGZO） films were deposited on the corning eagle XG （EXG） glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films...
详细信息
Amorphous InGaZnO （a-IGZO） films were deposited on the corning eagle XG （EXG） glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, semiconductor parameter analyzer and ＇spectrophotometry, respectively. The influence of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10^-2 Ω-cm2, which suggests that a good ohmic contact exists between In2O3 ： Sn （ITO） and IGZO film.
Amorphous InGaZnO （a-IGZO） film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO...
详细信息
Amorphous InGaZnO （a-IGZO） film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension （CD） loss is less than 1μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor （TFT） array process.
In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of...
详细信息
暂无评论