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Electronics system-Integration Technology Conference, ESTC

作者： Xu Wang Xia Zhang Johan Liu Yan Zhang Key Laboratory of Advanced Display and System Applications & SMIT Center Shanghai University Shanghai P.R.China Current address: SanDisk Semiconductor (Shanghai) Corporation Shanghai P.R. China Department of Microtechnology and Nanoscience Chalmers University of Technology Goteborg Sweden

In earlier work, radio frequency (RF) performance of flip-chip anisotropic conductive adhesive (ACA) joints has been studied both in experiments and simulations. Nowadays, coplanar waveguide (CPW) transmission lines are being used widely as its lower loss compared to conventional MS lines. In this paper, we studied RF performance of the ACA joints for CPW lines using the simulation software HFSS. Firstly, we investigated the high frequency performance by varying distance and number of ACA particles. It shows that the S11 parameter greatly deteriorated at the lower frequency band. To further study this phenomenon, we extracted the equivalent circuit. The extracted circuit value showed that when particle number increased, the electromagnetic interaction between each particles gradually dominant the overall performance. As a result, the mutual inductance increased the equivalent inductance, and the equivalent capacitances was also increased in the interconnect region. The particle distance was found to have little influence on the RF performance. Secondary, we studied the influences of resin compound (epoxy matrix) with different dielectric constant. Resin compound greatly influence the effective constant and impedance at the output port, thus induced impedance mismatch and slightly changed S11 response in the frequency range. Finally, we performed ANOVA analysis to evaluate the impact factors among ACA resin, joint height, signal to ground bump distance, conductor overlap and particle number. The dielectric constant of resin was found to be the most important factor in flip chip CPW-CPW ACA joints. Conductor overlap and ground to signal distance are still the two main factors. To optimize the performance, the dielectric constant of resin should be as lower as possible, and the conductor overlap length and ground to signal distance should be minimized. Moreover, particle number and bump height proved to have least effect. To achieve best performance, the particle numbe

关键词： Radio frequency Flip chip Coplanar waveguides Transmission lines Resins Dielectric constant Conductors Coplanar transmission lines Inductance Impedance

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Room temperature transfer of carbon nanotubes on flexible substrate

Room temperature transfer of carbon nanotubes on flexible su...

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International Workshop on Thermal Investigation of ICs and systems (THERMINIC)

作者： Di Jiang Yifeng Fu Yan Zhang Johan Liu Department of Microtechnology and Nanoscience Chalmers University of Technology Göteborg Sweden SHT Smart High-Tech AB Gothenburg Sweden Key Laboratory of Advanced Display and System Applications & SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China Göteborg Sweden

In this paper we report a novel method of transferring thermally grown vertically aligned carbon nanotubes (VA-CNTs) onto flexible substrates at room temperature with a single-step process. The transfer process is carried out by placing the CNT forests upside down on a double sided thermal release adhesive tape and peeling off the silicon substrate. Scanning electron microscope (SEM) is used to observe the transfer results. Also a second transfer using the same method but a thermal tape with higher release temperature is repeated on the as-transferred CNTs forests. The results show that this method is able to provide a novel process for transferring CNT forests at room temperature. This process will help to bring close the low cost fabrication of vertically aligned CNT structures for electronics.

关键词： Carbon nanotubes Substrates Plastics Silicon Physics Arrays

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Effect of encapsulation on OLED characteristics with anisotropic conductive adhesive

Effect of encapsulation on OLED characteristics with anisotr...

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Electronics system-Integration Technology Conference, ESTC

作者： Yan Zhang Mans Andreasson Johan Liu Thorvald Andersson Hsuan-Yi Liao Itsuo Watanabe Key Laboratory of Advanced Display and System Applications Ministry of Education & SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China Applied seminconductor Physics Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden SMIT Center Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden Advanced Interconnect Material Division Hitachi Chemical Company Limited Chikusei Ibaraki Japan

Organic light emitting devices (OLEDs) is one of the most potentially interesting display technologies in the flat panel display (FPD) field. This paper investigates the effects of OLED structures and a perimeter encapsulation to protect the OLED from atmospheric exposure. Firstly, the electric features of the OLED devices with and without a copper phtalocyanine layer were measured, and the one with the additional buffer layer showed a lower turn-on voltage. Then the OLED device sample was encapsulated with a glass cover bonded to the substrate with an adhesive matrix containing micro-particles. The samples were stored in ambient conditions, and the IV characteristics were studied with shelf-time as a parameter. The measurement results indicated that the encapsulation had a significant improvement on the device operation. After two weeks of storage the encapsulated samples showed less degradation and the current density at a given operating bias was about fifty percent higher than without encapsulation.

关键词： Encapsulation Organic light emitting diodes Anisotropic magnetoresistance Conductive adhesives Flat panel displays Protection Copper Atmospheric measurements Electric variables measurement Buffer layers

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FEM simulation of bimodal and trimodal thermally conductive adhesives

FEM simulation of bimodal and trimodal thermally conductive ...

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IEEE Conference on Nanotechnology

作者： Nabi Nabiollahi Johan Liu Zhu Hilli Yan Zhang Yue Cong Zhaonian Cheng Masahiro Inoue Bio Nano science laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden Key Laboratory of Advanced Display and System Applications School of Mechatronics Engineering and Automation Ministry of Education and SMIT Center Shanghai University Shanghai China The Institute of Scientific and Industrial Research Osaka University Osaka Japan

ISBN: (纸本)9781424448326

A simulation with combination of a finite element analysis of Thermally Conductive Adhesive and contact resistance modeling has been presented. Using ANSYS and MATLAB software thermal conductivity and electrical resistivity of Conductive Adhesives with Ag filler and Epoxy matrix has been calculated. Thermally Conductive Adhesives are used as a thermal interface material to provide a better conduction and heat transfer between two surfaces. The results show that the conductivity dependency is relatively high for different filler shape and alignment. Discussed models are bimodal, Ag flakes and Ag spherical micro particles and trimodal with Multi-WallCNT nano particles.

关键词： Thermal conductivity Conductive adhesives Thermal resistance Mathematical model Analytical models Finite element methods Contact resistance MATLAB Electric resistance Conducting materials

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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes

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Moore and More 2024年第1期1卷 1-9页

作者： Zhang, Xiaofei Wang, Lin Kong, Lingmei Wang, Sheng Dai, Jun Jia, Guohua Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Department of Physics Jiangsu University of Science and Technology Zhenjiang China School of Molecular and Life Sciences Curtin University Perth Australia Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai China

Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m−2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m−2), which is 7.4-fold longer than that for the control device.

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Anisotropic thermal conductivity in electrically conductive adhesives with single- and bimodal filler-size distributions containing Ag flakes and micro-particles

Anisotropic thermal conductivity in electrically conductive ...

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Electronics system-Integration Technology Conference, ESTC

作者： Masahiro Inoue Hiroaki Muta Shinsuke Yamanaka Johan Liu Institute of Scientific and Industrial Research Osaka University Osaka Japan Division of Sustainable Energy and Environmental Engineering Graduate School of Engineering Osaka University Suita Osaka Japan Key Laboratory of Advanced display and System Applications and SMIT Center Shanghai University Mechatronics Engineering Shanghai China

Adhesives containing Ag flakes and spherical micro-particles were prepared. The variations in their electrical and thermal conductivities with matrix chemistry and curing temperature were investigated. Due to the alignment of Ag flakes along the in-plane direction, the adhesives containing only Ag flakes provided maximum thermal conductivity in this direction. Introduction of Ag spherical micro-particles effectively improved the thermal conductivity in the vertical direction for the bi- and single-modal adhesives. The adhesives containing only micro-particles are expected to be most effective from the viewpoint of the number of interfaces. However, the filler size distributions that provide maximum thermal conductivity in the vertical direction alter depending on the matrix chemistry and curing temperature due to variation in the interfacial thermal resistance between fillers.

关键词： Heating Annealing Temperature measurement Variable speed drives Resins

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A real-time pedestrian detection model adopted by high-performance ANS-DPM

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Journal of Computers (Taiwan) 2019年第2期30卷 240-251页

作者： Guo, Ai-Ying Ran, Feng Zhang, Jian-Hua Xu, Mei-Hua Gong, Lu-Ming Shen, Hua-Ming Key Laboratory of Advanced Display System Applications Ministry of Education Shanghai China Microelectronic Research and Development Center Shanghai China School of Mechatronics Engineering and Automation Shanghai University Shanghai China

In order to fulfill the real-time pedestrian detection system, it is difficult to balance the higher detection rate and greater detection speed at the same time. Therefore, this paper proposed an Adaptive Neighborhood Selection-Deformable Part Model (ANS-DPM) as a novel pedestrian feature operator to solve this problem. ANS-DPM adopts the adaptive feature zones to extract the pedestrian features based on the relationship between features ex-traction score with the experience threshold to decrease the whole calculation and upgrate. Meanwhile, the inner-layer and inter-layer constraint are introduced into the ANS-DPM to deal with the model of robustness. Finally, ANS-DPM with Latent-SVM constructs the pedestrian detection system and experiment result shows that the ANS-DPM can improve the feature rate, while the pedestrian detection system can detect 30 fps to satisfy the real-time detection system. © 2019 Computer Society of the Republic of China. All rights reserved.

关键词： Feature extraction

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Anisotropic thermal conductivity in electrically conductive adhesives with single- and bimodal filler-size distributions containing Ag flakes and micro-particles

Anisotropic thermal conductivity in electrically conductive ...

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3rd Electronics system Integration Technology Conference, ESTC 2010

作者： Inoue, Masahiro Muta, Hiroaki Yamanaka, Shinsuke Liu, Johan The Institute of Scientific and Indistrial Research Osaka University 8-1 Mihogaoka Ibaraki Osaka 567-0047 Japan Division of Sustainable Energy and Environmental Engineering Graduate School of Engineering Osaka University 2-1 Yamadaoka Suita Osaka 565-0871 Japan Department of Microtechnology and Nanoscience Chalmers University of Technology Kemivägen 9 SE-412 96 Göteborg Sweden Key Laboratory of Advanced Display and System Applications SMIT Center Shanghai University Box 282 No. 149 Yan Chang Road Shanghai 200072 China

ISBN: (纸本)9781424485536

关键词： Adhesives

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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A High Performance Ag Alloyed Nano-scale n-type Bi 2 Te 3 Based Thermoelectric Material

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Materials Today: Proceedings 2015年第2期2卷 610-619页

作者： Si Chen Nikolaos Logothetis Lilei Ye Johan Liu SMIT Center School of Automation and Mechanical Engineering Key Laboratory of Advanced Display and System Applications Shanghai University No. 149 Yanchang Road Shanghai 200072 P. R. China Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Kemivägen 9 41296 Gothenburg Sweden SHT Smart High-Tech AB Aschebergsgatan 46 411 33 Gothenburg Sweden

A silver alloyed n-type bismuth telluride (Bi 2 Te 3 )thermoelectric (TE) bulk material with nano crystalline structure was studied and characterized in this paper. The Bi 2 Te 3 nanopowders used in this study were first fabricated viaa patented explosion based process. Then, the various concentrations of Ag nanoparticles (0-20 wt. %) were added into the Bi 2 Te 3 nanopowders in order to increase the electrical conductivity. Combining the benefits of high electrical conductivity (1.51×10 5 S·m -1 ) and low thermal conductivity (0.441 W·m -1 ·K -1 ), the dimensionless figure of merit (ZT value) of 1.48 for this n-type Bi 2 Te 3 TE material is achieved at 300 K temperature.

关键词： Thermoelectric Bismuth-Telluride Silver Nano-scale Nanoparticles

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