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SSRN 2024年

作者： Zheng, Haixai Zhu, Yangyang Zhao, Bingjia Lin, Yang Lan, Weixia Shi, Wei Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China School of Microelectronics Shanghai University Shanghai200072 China Shanxi Datong University China

We propose a face-sealed encapsulation solution with simple process and low cost. The polyisobutylene encapsulation patch mixed with calcium oxide particles is attached to the surface of the OLEDs that is exposed to the hygroscopic agent in a face-sealing manner. We find that this encapsulation scheme exhibited excellent waterproof performance. The encapsulated OLED has a long shelf lifetime in water under high temperature conditions, which is manifested in a long underwater shelf lifetime of T95 (luminance drops to 95% of the initial luminance) of over 336 hours at 60°C. This strategy can be extended to roll-to-roll processes to expand the application of flexible photoelectronic devices. © 2024, The Authors. All rights reserved.

关键词： Luminance

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Flip Chip Assembly Using Carbon Nanotube Bumps and Anisotropic Conductive Adhesive Film

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ECS Transactions 2010年第1期27卷

作者： Xia Zhang Teng Wang Pär Berggren Si Chen Johan Liu Shanghai University Chalmers University of Technology SHT Smart High-Tech AB SMIT Ltd Key Laboratory of Advanced Display and System Applications Ministry of Education & SMIT Center Shanghai University Shanghai China

Carbon Nanotube (CNT) has been proposed as a promising candidate material to build next generation flip chip interconnects in electronics. In this paper, flip chip assembly using CNT bumps and ACF is performed. To realize CNT-based interconnects, post-growth processes including deposition of metallic layers on CNT bundles and low temperature transfer of CNT bundles have been developed to overcome the problems of the high growth temperature of CNT as well as the poor adhesion between CNT bumps and substrates. Moreover, ACF has been used to assemble the CNT bumps on another Si substrate. The electrical test is performed also to verify the good contact between CNT bumps and ACF.

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Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current

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SSRN 2023年

作者： Yin, Luqiao Wu, Shuang Ren, Kailin Zhang, Wenkui Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200444 China

The thermal response of Lateral GaN-based High Electron Mobility Transistor is much faster than that of Si-based power devices, owing to its higher power density. This makes temperature-related effects even more critical for GaN HEMTs, highlighting the necessity of monitoring their operating temperature to improve the efficiency and reliability of power circuits. In this article, a real-time monitoring method for channel temperature of p-GaN HEMTs using gate leakage current as a medium is proposed. The dependence of gate current on temperature is demonstrated by electro-thermal TCAD simulation on the reference p-GaN HEMT structure. An improved gate driver circuit is proposed that integrates a monitoring circuit utilizing the current amplification capability of bipolar transistors and an RC integrator network. The efficiency of the proposed solution is confirmed through SPICE electrothermal simulations and experimental validation on commercially available devices. In conclusion, the implementation of the monitoring circuit has been proved effective, offering a promising pathway to improve the reliability of p-GaN HEMTs. © 2023, The Authors. All rights reserved.

关键词： High electron mobility transistors

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Synthesis of ZnO nanorods based on electrospinning technology

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Journal of Physics: Conference Series 2020年第3期1549卷

作者： Xiuzhen Lu Yongqian Sun Ziwei Jiang Maomao Zhang Yang Lin SMIT Center School of Mechatronic Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatment of ZnO electrospun nanofibers, ZnO nanorods were obtained. Morphology of ZnO nanorods was characterized by Scanning electron microscopy (SEM). Various morphologies, such as sphere, flower and plane composed of ZnO nanorods were observed. Transmission electron microscopy (TEM) images demonstrated ZnO nanorods are a single crystalline structure with a diameter of 100-180 nm. The hexagonal wurtzite structure of ZnO nanorods was determined by X-ray diffraction (XRD) pattern and Raman spectra.

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Multi-chip integrated high-power white LED device on the multi-layer ceramic substrate

Multi-chip integrated high-power white LED device on the mul...

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Electronic Components and Technology Conference (ECTC)

作者： Luqiao Yin Weiqiao Yang Yansheng Guo Kejun Ma Shuzhi Li Mingfa Chen Jia Li Jianhua Zhang School of Mechatronics and Automation Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China Shanghai Research Center of Engineering and Technology for Semiconductor Lighting Shanghai China Rainbow Optoelectronics Material Shanghai Company Limited Shanghai China Microelectronics Technology Institute of East China Shanghai University Shanghai China

In order to solve the thermal issue and improve the thermal resistance of LED, a device with multi-chip packaged on multi-layer composite ceramic substrate is successfully packaged. The top layer of the substrate is low temperature co-fire ceramic (LTCC), while the base layer is aluminum nitride (AINx) ceramic. 18 chips(one watt) are used in the device, and all of them are simultaneously packaged on a composite ceramic substrate which is 55 mm in length and 20 mm in width. The 18 chips are designed into two rows, and three chips in series for six parallels. At the same time the same chips are packaged on aluminum (Al) substrate and alumina (AlOx) substrate. After wire bonding photoelectric parameters of the three package modules are tested, the results show that the properties of the AINx-based package has the best performances, the thermal resistance of the device is far smaller than the other devices packed on the Al substrate and the AlOx substrate. After phosphor coatings the AINx-based multi-layer ceramic substrate package has 896.1 lm (43.4 lm/W) loading 350 milliampere (mA) to each chip, and has 1081.3 lm (35.4 lm/W) loading 500 mA. The multi-chip module has little light degradation adding 500 mA to each chip after working in the room temperature for one afternoon. At last the module is simulated by ANSYS software, the highest junction temperature of the chips in the module is about 70.8degC when 1.8 watts electric power is loaded to each chip, this temperature is far lower than 125degC which will damage the chip, and he highest simulation temperature of the aluminum heat slug is about 39.3degC. The temperature of the aluminum heat slug is about 41.0degC which is tested by thermocouple in the experiments, and it is closely to the simulation temperature 39.3degC. At last the relationship between pn-junction temperature and thermal conductivity coefficient of the silver (Ag) paste , the relationship between pn-junction temperatures and convection coefficient ha

关键词： Light emitting diodes Ceramics Temperature Packaging Thermal resistance Thermal conductivity Testing Aluminum nitride Wire Bonding

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13.3: A new pixel structure for OLEDoS micro-display

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SID Symposium Digest of Technical Papers 2019年第S1期50卷

作者： Aiying Guo Feng Ran Jianhua Zhang Microelectronic Research and Development Center Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China

In this paper, we propose a new pixel structure for the organic Light Emitting Diode (OLED) 0.65 inch SVGA resolution micro-display with 8 bit gray level. The proposed pixel structure is composed of 4 MOSFETS and one capacitor to integrate the pixel structure in the restricted pixel area (9um×9um) using 0.18um technology. The simulation result shows that the maximum error of emission current occurs at high gray level.

关键词： OLEDoS Micro-display Pixel structure SVGA MONSFET

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The Effect of Functionalized Silver on Rheological and Electrical Properties of Conductive Adhesives

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ECS Transactions 2011年第1期34卷

作者： Qiong Fan Huiwang Cui Chune Fu Dongsheng Li Xin Tang Zhichao Yuan Lilei Ye Johan Liu Ministry of Education and SMIT Center Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center Shanghai University No.149 Yanchang Road Shanghai Shanghai 200072 China Shang Da Rui Hu Microsystem Integration Technology Co.Ltd Shanghai University SHT Smart High Tech AB Shanghai University SE-412 96 Gothenburg Gothenburg 41296 Sweden

This research used low molecular surface modifiers, and observed that chemisorptions took place through the formation of a bond between silver surface and an adsorbed molecule, which improved the dispersion of silver flakes in the organic resin. Several different functionalizers, such as thioglycolic acid, silane and di-acid, were used to functionalize the silver surface. Results of shear viscosity, bulk resistivity etc. showed that by using these low molecular organic functionalizers, isotropic conductive adhesives (ICAs) with lower shear viscosity and better electrical conductivity at high silver fillers content were obtained. The adipic acid had the greatest effect on the rheological and electrical property of ICAs, so its weight percentage in silver flakes was also optimized; ICAs displayed the maximum electrical conductivity when there was 0.5 wt% of silver flakes.

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Dynamic color temperature white lighting source based on red green and blue light emitting diode

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Guangxue Xuebao/Acta Optica Sinica 2011年第5期31卷

作者： Yin, Luqiao Yang, Weiqiao Li, Shuzhi Cheng, Bei Zhang, Jianhua School of Mechanical Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai 200072 China Shanghai Research Center of Engineering and Technology for Semiconductor Lighting Shanghai 201203 China

More and more attentions have been focused on the lighting source as it plays an important role to people's health. The light emitting efficiency of light emitting diode has been broken through year by year and now it has been surpassed that of the traditional lighting source. In order to improve the lighting quality by a lighting source with flexible color temperature, a data base is created with different color temperature by mixing different proportion luminous flux of red, green and blue light emitting diode based on theoretical calculations. The data base is embedded into the control program and it can run different proportion to realize light source variation with color temperature at different time. The experimental results show that the lighting source can realize correlated color temperature from 2300-7000 K, real color temperature is in accordance with that of theoretical calculation. Thus a sunlight-style lighting device is realized fundamentally.

关键词： Light emitting diodes

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Wigner-Ville distribution and cross Wigner-Ville distribution of noisy signals

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Journal of systems Engineering and Electronics 2008年第5期000卷

作者： Chen Guanghua Ma Shiwei Liu Ming Zhu Jingming Zeng Weimin Key Laboratory of Advanced Display and System Applications Ministry of Education & Microelectronic Research and Development CenterShanghai Univ.Shanghai 200072P.R.China

The Wigner-Ville distribution (WVD) and the cross Wigner-Ville distribution (XWVD) have been shown to be efficient in the estimation of instantaneous frequency (IF).But the statistical result of the IF estimation from XWVD peak is much better than using WVD *** reason is given from a statistical point of *** studies show that XWVD of the analyzed signal can be estimated from XWVD of the noise-contaminated *** estimation is unbiased,and the variance is equal to that of *** this case,WVD cannot be estimated from WVD of the noise-contaminated ***,higher SNR is required when WVD is used to analyze signals.

关键词： Wigner-Ville distribution cross Wigner-Ville distribution instantaneous frequency expectation vari-ance

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P-13.7: High-quality OLED Micro-display aided by PGL-SCS operator

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SID Symposium Digest of Technical Papers 2018年第S1期49卷

作者： Aiying Guo Feng Ran Jianhua Zhang Meihua Xu Huaming Shen Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China Microelectronic Research and Development Center Shanghai China School of Mechatronics Engineering and Automation Shanghai China

In the high-quality OLED micro-display, it is difficult to balance the faster frame refresh rate and higher resolution frame. In order to solve this problem, this paper propose a high-efficient PGL-SCS (Particle Gray Level-Scan Control Strategy) operator as the new scan strategy, which is based on the digital fractal scan strategy. This paper firstly introduces the theory model of PGL-SCS operator, which based on the relationship between sub-space code sequences and bit code sequences for different gray levels. Second, the theory performance of PGL-SCS is analysed. At last, the PGL-SCS operator is tested using the IP core and self-build HD OLED micro-display system. The experiments shows that the PGL-SCS operator can obtain 100% scan utilization and a significant decrease in the system clock frequency, compared with the traditional scan methods. With the proposed PGL-SCS there is no need of using high-speed IC circuits to realize the high-resolution and high-quality OLED micro-display system.

关键词： PGL-SCS Scan OLED Micro-display Digital

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