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Recent Progress in The Studies of Low Melting Sn-Based Pb-Free Solders

Recent Progress in The Studies of Low Melting Sn-Based Pb-Fr...

2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Yang Lin Luqiao Yin Xicheng Wei Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Educati School of Mechatronics and Automation Shanghai University P.O.B.143 149 Yanchang Rd. Shanghai 20 School of Mechatronics and Automation Shanghai University P.O.B.143 149 Yanchang Rd. Shanghai 20

Limited by the toxicity of Pb and Pb-containing compounds and the implementation of the mandatory legislations, such as WEEE and RoHS, the Pb-containing solders have been banned and accordingly the Pb-free solders have become popular in electronic industry. However, the novel developed Pb-free solders could cause a series of packaging defects such as delamination, cracking, and charring etc. due to the relatively high melting temperatures of these Pb-free substitutes compared to the former Sn-Pb

关键词： Nanoparticles Compounds Lead Packaging Gallium

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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44.3:Invited Paper:Solution-processed inorganic charge transport layers for efficient and stable quantum-dot LEDs

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SID Symposium Digest of Technical Papers 2019年第S1期50卷

作者： Xuyong Yang Fan Cao Haoran Wang Piaoyang Shen Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai P. R. China 20007

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Correction: Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes

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Journal of Materials Chemistry C 2020年第45期8卷 16241-16241页

作者： Piaoyang Shen Xiaomin Li Fan Cao Xingwei Ding Xuyong Yang Key Laboratory of Advanced Display and System Applications of Education of Ministry Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

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Low-voltage and high efficiency tandem white organic light emitting diodes

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第12期29卷 2417-2420页

作者： Wei, Fuxiang Fang, Liang Jiang, Xueyin Zhang, Zhilin School of Materials Science and Engineering China University of Mining and Technology Xuzhou 221008 China Key Laboratory of Advanced Display and System Application of the Ministry of Education Shanghai University Shanghai 201800 China

We report a white tandem organic light-emitting device (TOLED) with high efficiency and low drive voltage using Bphen: Li/WO3 as the interconnecting layer. The TOLED have been fabricated by connecting two low-voltage driving white units with conductive transport layers. The tandem two-unit device produces two higher luminance efficiency than that expected of a single-unit device. A maximum efficiency of 17cd/A is achieved by the tandem device comprised of two white-fluorescent OLEDs. The power efficiency of tandem white organic light-emitting device is enhanced by 53% as compared to the control device. ©2008 Chinese Institute of Electronics.

关键词： Efficiency

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Surfactant-Assisted Cooperative Self-Assembly of Nanoparticles into Active Nanostructures

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iScience 2019年第January 25, 2019期11卷 272-293页

作者： Wenbo Wei Feng Bai Hongyou Fan Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Electronic address: baifengsun@***. Department of Chemical and Biological Engineering The University of New Mexico Albuquerque NM 87131 USA Advanced Materials Laboratory Sandia National Laboratories Albuquerque NM 87106 USA Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87185 USA. Electronic address: hfan@sandia.gov.

Nanoparticles (NPs) of controlled size, shape, and composition are important building blocks for the next generation of devices. There are numerous recent examples of organizing uniformly sized NPs into ordered arrays or superstructures in processes such as solvent evaporation, heterogeneous solution assembly, Langmuir-Blodgett receptor-ligand interactions, and layer-by-layer assembly. This review summarizes recent progress in the development of surfactant-assisted cooperative self-assembly method using amphiphilic surfactants and NPs to synthesize new classes of highly ordered active nanostructures. Driven by cooperative interparticle interactions, surfactant-assisted NP nucleation and growth results in optically and electrically active nanomaterials with hierarchical structure and function. How the approach works with nanoscale materials of different dimensions into active nanostructures is discussed in details. Some applications of these self-assembled nanostructures in the areas of nanoelectronics, photocatalysis, and biomedicine are highlighted. Finally, we conclude with the current research progress and perspectives on the challenges and some future directions.

关键词： Materials Science Nanoparticles Supramolecular Chemistry

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Encapsulation of OLED device by Using Anisotropic Conductive Adhesive

Encapsulation of OLED device by Using Anisotropic Conductive...

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yan Zhang Mans Andreasson Hua Zhou Johan Liu Thorvald Andersson Jing-yu Fan Department of Applied Mechanics Chalmers University of Technology Gothenburg Sweden Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education & SMIT Center Shanghai University China Applied seminconductor Physics Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden SMIT Center & Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai China

Organic light emitting diodes (OLEDs) is one of the most potential display technologies in the flat panel display (FPD) field, and its applications include simple monochrome large-area lighting to full color, video-capable graphics displays and so on. As organic materials are susceptible to humidity and oxygen, encapsulation is a key issue for OLED device reliability. In the present paper, two kinds of OLED samples have been studied; one encapsulated by adhesive matrix with fillers, and one without encapsulation. Variation of the electrical parameters of the OLED samples with respect to exposure time has been measured. The primary experiment investigation was carried out for the OLED sample sealed with an anisotropic conductive adhesive. Encapsulation material analysis, such as choices of different fillers/absorbent in the adhesive matrix, optimization of polymer matrix etc., will be conducted in future work.

关键词： Encapsulation Organic light emitting diodes Anisotropic magnetoresistance Conductive adhesives Flat panel displays LED lamps Graphics Organic materials Humidity Materials reliability

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P-5.2: Aqueous Sr-doped In2O3TFT stability under negative bias illumination stress

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SID Symposium Digest of Technical Papers 2019年第S1期50卷

作者： Youhang Zhou Jun Li Yaohua Yang Xifeng Li Jianhua Zhang School of Material Science and Engineering Shanghai University Jiading Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

In this paper, the Sr-doped In 2 O 3 thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In 2 O 3 TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping.

关键词： Sr-doped In2O3 thin film transistor aqueous route negative bias illumination stress stability

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Wigner-Ville distribution and cross Wigner-Ville distribution of noisy signals

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Journal of systems Engineering and Electronics 2008年第5期000卷

作者： Chen Guanghua Ma Shiwei Liu Ming Zhu Jingming Zeng Weimin Key Laboratory of Advanced Display and System Applications Ministry of Education & Microelectronic Research and Development CenterShanghai Univ.Shanghai 200072P.R.China

The Wigner-Ville distribution (WVD) and the cross Wigner-Ville distribution (XWVD) have been shown to be efficient in the estimation of instantaneous frequency (IF).But the statistical result of the IF estimation from XWVD peak is much better than using WVD *** reason is given from a statistical point of *** studies show that XWVD of the analyzed signal can be estimated from XWVD of the noise-contaminated *** estimation is unbiased,and the variance is equal to that of *** this case,WVD cannot be estimated from WVD of the noise-contaminated ***,higher SNR is required when WVD is used to analyze signals.

关键词： Wigner-Ville distribution cross Wigner-Ville distribution instantaneous frequency expectation vari-ance

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P-13.3: Efficient Blue and Color Tunable White OLED Based on Platinum Complex

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SID Symposium Digest of Technical Papers 2021年第S1期52卷

作者： Jianfeng Guo Zhangcheng Liao Rongrong Xia Hong Lin Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 P. R. China

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