Room-temperature phosphorescent (RTP) carbon dots (CDs) have been fascinated by a lot of scholars because of their stable triplet excited states and environmental friendliness. Herein, novel fluorescent oxygen-enriche...
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Room-temperature phosphorescent (RTP) carbon dots (CDs) have been fascinated by a lot of scholars because of their stable triplet excited states and environmental friendliness. Herein, novel fluorescent oxygen-enriched CDs were synthesized by a simple one-step solvothermal approach, which can be applied in cell imaging directly as a nontoxic fluorescent probe. When mixing the CDs with polyvinyl alcohol, the composite exhibits excellent RTP performance, which has the exciting prospect of applications in security protection. The observed RTP is attributed to the lone pair electrons provided by oxygen-rich functional groups of CDs. Benefitting from the n → π* transition and triplet exciton filling, the C–O–C groups of CDs play a significant role in their ultralong RTP performance. Our finding creates an avenue for advanced security protection technology based on metal-free RTP carbon nanomaterials.
A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatmen...
A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatment of ZnO electrospun nanofibers, ZnO nanorods were obtained. Morphology of ZnO nanorods was characterized by Scanning electron microscopy (SEM). Various morphologies, such as sphere, flower and plane composed of ZnO nanorods were observed. Transmission electron microscopy (TEM) images demonstrated ZnO nanorods are a single crystalline structure with a diameter of 100-180 nm. The hexagonal wurtzite structure of ZnO nanorods was determined by X-ray diffraction (XRD) pattern and Raman spectra.
The lagging development of deep-blue perovskite light-emitting diodes (PeLEDs) heavily impedes their practical applications in full-color display due to the absence of spectrally stable emitters and the mismatch of ca...
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The lagging development of deep-blue perovskite light-emitting diodes (PeLEDs) heavily impedes their practical applications in full-color display due to the absence of spectrally stable emitters and the mismatch of carrier injection capacity. Herein, we report highly efficient deep-blue PeLEDs through a new chemical strategy that addresses the dilemma for simultaneously constant electroluminescence (EL) spectra and high-purify phase in reduced-dimensional perovskites. The success lies in the control of adsorption-energy differences between phenylbutylamine (PBA) and ethylamine (EA) interacting with perovskites, which facilitates narrow n -value distribution. This approach leads to an increased exciton binding energy and enhanced surface potential, hence improving radiative recombination. As a result, an external quantum efficiency of 4.62 % is achieved in PeLEDs with a stable EL peak at 457 nm, demonstrating the best reported result for deep-blue PeLEDs so far.
Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature ...
Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of RRMS measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 °C. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ωcm at 350 °C. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1s-1.
Carbon Nanotube (CNT) has been proposed as a promising candidate material to build next generation flip chip interconnects in electronics. In this paper, flip chip assembly using CNT bumps and ACF is performed. To rea...
Carbon Nanotube (CNT) has been proposed as a promising candidate material to build next generation flip chip interconnects in electronics. In this paper, flip chip assembly using CNT bumps and ACF is performed. To realize CNT-based interconnects, post-growth processes including deposition of metallic layers on CNT bundles and low temperature transfer of CNT bundles have been developed to overcome the problems of the high growth temperature of CNT as well as the poor adhesion between CNT bumps and substrates. Moreover, ACF has been used to assemble the CNT bumps on another Si substrate. The electrical test is performed also to verify the good contact between CNT bumps and ACF.
This research used low molecular surface modifiers, and observed that chemisorptions took place through the formation of a bond between silver surface and an adsorbed molecule, which improved the dispersion of silver ...
This research used low molecular surface modifiers, and observed that chemisorptions took place through the formation of a bond between silver surface and an adsorbed molecule, which improved the dispersion of silver flakes in the organic resin. Several different functionalizers, such as thioglycolic acid, silane and di-acid, were used to functionalize the silver surface. Results of shear viscosity, bulk resistivity etc. showed that by using these low molecular organic functionalizers, isotropic conductive adhesives (ICAs) with lower shear viscosity and better electrical conductivity at high silver fillers content were obtained. The adipic acid had the greatest effect on the rheological and electrical property of ICAs, so its weight percentage in silver flakes was also optimized; ICAs displayed the maximum electrical conductivity when there was 0.5 wt% of silver flakes.
The high-order Target ENO (TENO) scheme, known for its innovative weighting strategy, has demonstrated strong potential for complex flow predictions. This study extends the TENO weighting approach to develop non-oscil...
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Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lith...
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Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.
Indium-Tin-Oxide (ITO) film prepared by DC magnetron sputtering was used as a current spread layer for LEDs. After the annealing treatment, the physical prosperities of p-GaN based LED have been investigated. The N2 a...
Indium-Tin-Oxide (ITO) film prepared by DC magnetron sputtering was used as a current spread layer for LEDs. After the annealing treatment, the physical prosperities of p-GaN based LED have been investigated. The N2 annealing improved the surface roughness of ITO film to reach the smallest value (8 nm RMS) and exhibited an ohmic contact for ITO/p-GaN interface with the forward voltage decreasing. In comparison with electron beam evaporation, the ITO film prepared by DC magnetron sputtering had better optical and electronic prosperities after the annealing treatment.
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