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Experimental investigation of evolution of dynamics in short-resonant-cavity DFB laser with optical feedback

Optics & Laser Technology 2025年 191卷

作者： Wenchao Chen Yuanyuan Guo Zhiwei Jia Longsheng Wang Anbang Wang Yuncai Wang Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan 030024 China College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan 030024 China Key Laboratory of Photonic Technology for Integrated Sensing and Communication Ministry of Education Guangdong University of Technology Guangzhou 510006 China Guangdong Provincial Key Laboratory of Information Photonics Technology Guangdong University of Technology Guangzhou 510006 China Institute of Advanced Photonics Technology & School of Information Engineering Guangdong University of Technology Guangzhou 510006 China

We conducted experiments to investigate the evolution of dynamics in short-resonant-cavity distributed feedback laser subject to optical feedback. Results reveal that the transition of the laser into chaos involves a regular switching between the stable state and quasi-periodic state. When exiting the chaotic state, the laser exhibits a switching between stable state and chaotic state, ultimately evolving into feedback locking. A new dynamic evolution path of the DFB laser has been proposed: stable state → switching between the stable state and quasi-periodic state → quasi-periodic state → chaotic state → switching between stable state and chaotic state → feedback locking. The influences of feedback strength on the duty cycle of quasi-periodic oscillation are examined. Moreover, a mapping of dynamics with respect to feedback strength and bias current is presented.

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Continuous-time digital twin with analog memristive neural ordinary differential equation solver

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Science advances 2025年第22期11卷 eadr7571页

作者： Hegan Chen Jichang Yang Jia Chen Songqi Wang Shaocong Wang Dingchen Wang Xinyu Tian Yifei Yu Xi Chen Yinan Lin Qifan Zhu Yangu He Xiaoshan Wu Yi Li Xinyuan Zhang Ning Lin Meng Xu Xumeng Zhang Xiaojuan Qi Zhongrui Wang Han Wang Dashan Shang Qi Liu Kwang-Ting Cheng Ming Liu Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong China. School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China. Center for Advanced Semiconductors and Integrated Circuits the University of Hong Kong Hong Kong China. Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong China. School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan 430074 China. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai 200433 China. State Key Lab of Fabrication Technologies for Integrated Circuits and Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China. University of Chinese Academy of Sciences Beijing 100049 China.

Digital twins, which replicate real-world entities through computational models, are transforming manufacturing and automation. While recent advances in machine learning have enabled data-driven digital twin development using discrete-time data and finite-depth models on digital hardware, these approaches face significant limitations. They struggle to capture continuous-time dynamics and model complex systems, and suffer from substantial time and energy overheads due to physically separated storage and processing as well as frequent analog-digital (A/D) conversions. Here, we propose a memristive neural ordinary differential equation (ODE) solver for digital twins. Our approach is intrinsically time-continuous using infinite-depth neural networks to model complex dynamics. Fully analog memristor arrays collocate storage and computation, addressing the von Neumann bottleneck and reducing A/D conversion requirements. We experimentally validate our solver on digital twins of HP variable-resistor model and Lorenz96 dynamics, demonstrating a 166.5-fold/369.3-fold speedup and a 499.0-fold/673.9-fold improvement in energy efficiency, respectively. This work paves the way to future digital twins for Industry 4.0.

关键词： Continuous time systems

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Flexible Surface Acoustic Wave (Saw) Magnetic sensor Based on Terfenol-D Grating-Arrayed Thin Film

SSRN

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SSRN 2024年

作者： Qadir, Akeel Muhammad, Fayyaz Shafique, Shareen Haider, Zeeshan Zhimin, Yang Chuanjiao, Hou Xu, Xiaoqing Han, Gao Shi, Tianjin Karim, Shahid Xu, Hongsheng Farooq, Umar SchoolofInformation Engineering Xi’an Eurasia University 710065 China Key Laboratory of Micro and Nano Electro-Mechanical Systems Department of Microsystems Engineering NorthwesternPolytechnicalUniversity Xi'An710072 China Islamabad Pakistan Department of Microelectronic Science and Engineering Laboratory of Clean Energy Storage and Conversion School of Physical Science and Technology Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean andAtmosphere Ningbo University Ningbo315211 China Institute ofbiomedicalandhealthengineering Shenzhen Institute ofAdvancedTechnology China Hangzhou Hikvision DigitalTechnology Co. Ltd Hangzhou310052 China Faculty ofScience andTechnology ILMA University Karachi Pakistan Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits Anhui University HefeiAnhui230601 China

In recent years, research on the development of SAW based magnetic sensors has gained substantial interest since magnetic sensors are vital measuring components in numerous industrial, engineering and scientific applications. Literature survey revealed that SAW magnetic sensors are generally developed using rigid substrates which make them unsuitable to be mounted on uneven or bent surfaces. In this paper, SAW magnetic sensor design based on Terfenol-D grating-arrayed thin film is presented. The design is implemented on flexible Lithium Niobate (LiNbO3) substrate in order to address the design limitations associated with the conventional SAW magnetic sensors that are implemented on rigid substrates. The experimental results obtained suggest that the proposed SAW magnetic sensor is durable and have tendency to undergo mechanical deformation under stress while keeping the high performance. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices

Metal Migration Induced Breakdown from Gate Contact in Bulk ...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Xin Yang Yihong Qing Kuei-Shu Chang-Liao Yuchong Qiao Chaolun Wang Zhiwei Liu Luoyong Li Chihang Tsai Yongren Wu Yazhen Xie Weisong Yu Xing Wu Shanghai Key Laboratory of Multidimensional Information Processing East China Normal University Shanghai China Center for Advanced Semiconductor & Integrated Micro-System University of Electronic Science and Technology of China Chengdu China Engineering & System Science National Tsing Hua University Taiwan China China Chinaisti (shanghai) Testing Technology Co. Ltd Shanghai China

Bulk fin field-effect transistor (FinFET) devices with excellent gate control ability are promising to succeed the planar devices under Moore’s law. With the scaling down of the feature size, the reliability of the FinFET device becomes an urgent issue. Also, the miniaturized three-dimensional structure of bulk FinFET makes the failure characterization more challenging. In this paper, we carried out the direct current (DC) breakdown and transmission line pulse (TLP) breakdown in the bulk FinFET. Corresponding microstructural and chemical elements’ differences between gate contact and gate electrode are characterized by transmission electron microscopy (TEM). For both experiments, the fin nearest to gate contact is completely damaged under electrical stressing. The destruction of DC is more serious, which has a large area fusion with metal migration. The TLP damage is local and tends to form a void. The gate contact structure is intact with slight elements’ migration. This work paves a guideline for the reliability improvements of FinFET.

关键词： integrated circuits Electric breakdown Transmission electron microscopy Contacts Metals Logic gates FinFETs

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Failure Analysis on Diode-triggered Silicon-Controlled Rectifiers By using Nondestructive X-ray Microscopy

Failure Analysis on Diode-triggered Silicon-Controlled Recti...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Xinqian Chen Mengge Jin Feihou Fang Liang Zijian Zhang Yanan Wang Dongming Liu Le Chen Chaolun Wang Zhiwei Liu Xing Wu Shanghai Key Laboratory of Multidimensional Information Processing School of Communication and Electronic Engineering East China Normal University Shanghai China School of Electronic Information and Electrical Engineering Chengdu University Chengdu China Center for Advanced Semiconductor & Integrated Micro-System University of Electronic Science and Technology of China

As the complexity of integrated circuits increases, the electrostatic discharge (ESD) protection devices become critical to reliability issues. However, the physical failure analysis of ESD devices is destructive and time-consuming. In this work, by using the X-ray microscopy (XRM), we study the abnormal change in the leakage current of diode-triggered silicon-controlled rectifiers (DTSCRs) ESD structure under transmission line pulsing stressing. XRM is nondestructive physical failure analysis method by showing the in-depth morphology information of the devices. The results show that the proposed ESD devices have two parts, one is the trigger diodes part and the other is the SCR part. The SCR part was severely damaged and the contact and vias are melted under the electrical stressing, while the trigger diodes part remains intact. The failure analysis is nondestructive, multi-view, and time-saving. It is enlightening the design of novel ESD devices.

关键词： integrated circuits Power transmission lines Microscopy Contacts Failure analysis Rectifiers Morphology

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Contributions of surface roughness and oxygen-containing groups to the interfacial shear strength of carbon fiber/epoxy resin composites

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Carbon 2024年 218卷

作者： Yi-cai LIANG Xing-hua ZHANG Xing-hai WEI De-qi JING Wei-guo SU Shou-chun ZHANG Research Center of Advanced Thermoplastic Composites Engineering Institute of Coal Chemistry Chinese Academy Sciences Taiyuan 030001 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Carbon Materials Institute of Coal Chemistry Chinese Academy Sciences Taiyuan 030001 China National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China

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Unlocking phonon dynamics at interfaces: Angle-resolved transmission, mode conversion, and thermal conductance engineering

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International Journal of Heat and Mass Transfer 2025年 250卷

作者： Quanjie Wang Cheng Shao Yucheng Xiong Shouhang Li Renzong Wang Jianshi Sun Yifan Liu Xiangjun Liu School of Mechanical Engineering Shandong Key Laboratory of CNC Machine Tool Functional Components Qilu University of Technology (Shandong Academy of Sciences) Jinan PR China Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University Shanghai PR China Thermal Science Research Center Shandong Institute of Advanced Technology Jinan PR China Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering Donghua University Shanghai PR China Centre de Nanosciences et de Nanotechnologies CNRS Université Paris-Saclay 91120 Palaiseau France

Thermal transport across material interfaces is a critical factor in the thermal management and overall performance of integrated circuits (ICs). We investigate the angle- and mode-dependent phonon transmission across GaN/AlN interfaces, examining both smooth and rough morphologies. For smooth interface, phonon transmission is strongly influenced by the incident angle, with a critical angle (∼44.4°) limiting transverse mode transmission. Notably, longitudinal acoustic (LA) phonons exhibit anomalous behavior at high incident angles due to mode conversion, forming hybrid modes via coupling with optical phonons. At rough interface, diffuse scattering significantly alters transmission characteristics, enabling additional transport channels and enhancing transverse mode transmission. Frequency-dependent effects reveal a transition to complete diffuse scattering, with energy redistribution across acoustic and optical modes, highlighting acoustic-to-optical conversion. Our decomposition of transmission coefficients quantifies mode-specific contributions, revealing that mode conversion enhances the interfacial thermal conductance (ITC) by ∼10 %. Additionally, we quantify the interface specularity parameter, identifying polarization- and wavelength-dependent deviations from the Ziman model. These findings provide insight into optimizing ITC through interface engineering and phonon dynamics.

关键词： Electric heating

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Cardo poly (ether sulfone) toughened E51/DETDA epoxy resin and its carbon fiber composites

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Carbon 2024年 229卷

作者： Rong-peng Wu Xing-hua Zhang Xing-hai Wei De-qi Jing Wei-guo Su Shou-chun Zhang Research Center of Advanced Thermoplastic Composites Engineering Institute of Coal Chemistry Chinese Academy Sciences Taiyuan 030001 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Carbon Materials Institute of Coal Chemistry Chinese Academy Sciences Taiyuan 030001 China National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China

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Technology Roadmap for Flexible sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Publisher Correction: Fabrication of red-emitting perovskite LEDs by stabilizing their octahedral structure

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Nature 2024年第8020期631卷 E10页

作者： Lingmei Kong Yuqi Sun Bin Zhao Kangyu Ji Jie Feng Jianchao Dong Yuanzhi Wang Zirui Liu Shabnum Maqbool Yunguo Li Yingguo Yang Linjie Dai Wanhee Lee Changsoon Cho Samuel D Stranks Richard H Friend Ning Wang Neil C Greenham Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. Cavendish Laboratory University of Cambridge Cambridge UK. College of Physics Jilin University Changchun China. Department of Chemical Engineering and Biotechnology University of Cambridge Cambridge UK. CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space Sciences University of Science and Technology of China Hefei China. Shanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China. School of Microelectronics Fudan University Shanghai China. Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea. Institute for Convergence Research and Education in Advanced Technology Yonsei University Seoul Republic of Korea. College of Physics Jilin University Changchun China. ningwang@***. Cavendish Laboratory University of Cambridge Cambridge UK. ncg11@cam.ac.uk. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. yangxy@***. Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai China. yangxy@***.

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