For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic ***-optical logic gates have been demonstrated b...
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For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic ***-optical logic gates have been demonstrated based on conventional waveguides and interferometry,as well as photonic crystal ***,any defects in those structures will introduce high scattering loss,which compromises the fidelity and contrast ratio of the information *** on the spin-valley locking effect that can achieve defect-immune unidirectional transmission of topological edge states in valley photonic crystals(VPCs),we propose a high-performance all-optical logic OR gate based on a VPC *** tuning the working bandwidth of the two input channels,we prevent interference between the two channels to achieve a stable and high-fidelity *** transmittance of both channels is higher than 0.8,and a high contrast ratio of 28.8 dB is ***,the chirality of the logic gate originated from the spin-valley locking effect allows using different circularly polarized light as inputs,representing“1”or“0”,which is highly desired in quantum *** device’s footprint is 18μm×12μm,allowing high-density on-chip *** addition,this design can be experimentally fabricated using current nanofabrication techniques and will have potential applications in optical communication,information processing,and quantum computing.
Transmission error (TE) has emerged as a reliable indicator for fault diagnosis. However, in harmonic reducers, the non-stationary nature of measured TE signals results in the coupling of fault information with variou...
Transmission error (TE) has emerged as a reliable indicator for fault diagnosis. However, in harmonic reducers, the non-stationary nature of measured TE signals results in the coupling of fault information with various interference components, including manufacturing and assembly errors, thereby complicating fault feature identification. To address this issue, this paper first establishes a TE model that accounts for multiple error sources. Simulations of TE under fault conditions reveal that high-frequency components exhibit periodic peaks with distinct fault characteristics, rendering them effective as fault-sensitive features. Building upon the prior analysis, a comprehensive TE-based fault diagnosis framework for harmonic reducers is proposed, termed VMD-DRGAF-Swin Transformer. Initially, the VMD-DRGAF method is proposed for TE signal decomposition and fault feature fusion. This method extracts multi-modal fault-sensitive components and converts them into RGB images. Subsequently, the fused multi-modal images are input into a Swin Transformer-based diagnostic model for fault identification. Finally, an experimental TE signal dataset is collected to validate the diagnostic performance of the proposed method. The results demonstrate that the proposed method achieves higher diagnostic accuracy under various operating conditions, exhibiting strong generalization capabilities. Furthermore, ablation experiments confirm that the VMD-DRGAF method significantly enhances the fault recognition ability and robustness of the diagnostic model, outperforming traditional methods.
By introducing metallic nanostrips in organic solar cells with the excitation of the plasmonic hot spot effect, we improve light absorption in active layer by 24 % in comparison with the corresponding planar device. &...
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Underground void detection is important due to its effects on subsidence higher risk. Ground penetrating radar (GPR) is a nondestructive geophysical electromagnetic method and has been widely used in underground void ...
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In order to reduce energy loss of steering system, a high energy efficiency electronic control independent variable speed closed circuit steering principle is proposed. All the hydraulic valves of the original steerin...
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ObjectiveThis study aimed to verify the biomechanical efficacy of a novel internal fixation system for repairing lumbar spondylolysis (LS). Additionally, the changes in the mechanical performance of the novel internal...
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ObjectiveThis study aimed to verify the biomechanical efficacy of a novel internal fixation system for repairing lumbar spondylolysis (LS). Additionally, the changes in the mechanical performance of the novel internal fixation device during compression were *** healthy 25-year-old male volunteer was recruited for lumbar spine CT data acquisition to construct and validate a nonlinear finite element model of the L4-S1 spinal segment (A). Based on this, models were established for L5 spondylolysis (B), traditional internal fixation (C), and the pressurization process of the novel LS repair device fixation (D→E→F). For these six models, we constrained the lower surface of the S1 vertebral body while applying an axial compression force of 500 N and a moment load of 7.5 N·m on the upper surface of the L4 vertebral body to simulate six motions of the lumbar spine. The performance of each finite element model was evaluated by comparing the range of motion (ROM), maximum displacement, and maximum pressure experienced by the lumbar spine under different motion *** with Model C, Models D, E, and F exhibited a reduced ROM and maximum displacement (1%-38.5%, 12.8%-63.6%, and 32.8%-80.2%) compared with Model C during six different motions. Notably, compared with Model C, the novel internal fixation models consistently demonstrated a decreasing trend in the maximum stress on the intervertebral discs (IVD) and an increasing trend in the maximum stress on the articular cartilage and maximum stress and displacement of the bone graft. Moreover, the novel internal fixation model displayed larger ranges of evenly distributed stresses on the isthmus and reduced maximum stress on the internal fixation device across all six motions, with improved stiffness effects during the pressurization process of the novel internal fixation system (D→E→F).ConclusionsAccording to several mechanical comparisons, the novel internal fixation system had better biomechan
The method of using dielectrophoresis （DEP） to assemble graphene between micro-electrodes has been proven to be simple and efficient. We present an optimization method for the kinetic formula of graphene DEP, and di...
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The method of using dielectrophoresis （DEP） to assemble graphene between micro-electrodes has been proven to be simple and efficient. We present an optimization method for the kinetic formula of graphene DEP, and discuss the simulation of the graphene assembly process based on the finite element method. The simulated results illustrate that the accelerated motion of graphene is in agreement with the distribution of the electric field squared gradient. We also conduct research on the controllable parameters of the DEP assembly such as the alternating current （AC） frequency, the shape of micro-electrodes, and the ratio of the gap between electrodes to the characteristic/geometric length of graphene （λ）. The simulations based on the Clausius-Mossotti factor reveal that both graphene velocity and direction are influenced by the AC frequency. When graphene is close to the electrodes, the shape of micro-electrodes will exert great influence on the velocity of graphene. Also, λ has a great influence on the velocity of graphene. Generally, the velocity of graphene would be greater when λ is in the range of 0.4 0.6. The study is of a theoretical guiding significance in improving the precision and efficiency of the graphene DEP assembly.
La2O3 films are grown on Si （100） substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La203/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence-...
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La2O3 films are grown on Si （100） substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La203/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence- band and the conduction-band offsets of La2 Oa films to Si substrates are found to be 2.40±0.1 and 1.66±0.3 eV, respectively. Based on 0 ls energy loss spectrum analysis, it can be noted that the energy gap of La203 films is 5.18±0.2eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics.
Nanostructured n-type GaN layers were fabricated using the Contactless photoelectrochemical (PEC) etching method in KOH-based solutions under ultraviolet illumination. By adjusting the KOH concentration, distinct surf...
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Nanostructured n-type GaN layers were fabricated using the Contactless photoelectrochemical (PEC) etching method in KOH-based solutions under ultraviolet illumination. By adjusting the KOH concentration, distinct surface morphologies were obtained. Low-concentration KOH solutions led to the formation of nanorods at dislocation sites, whereas high-concentration solutions induced interconnected etch pits. Cathodoluminescence (CL) analysis confirmed a strong correlation between the resulting nanostructures and dislocation sites. The formation mechanisms of different nanostructures were discussed. Electrochemical characterization revealed significantly enhanced performance in etched GaN samples. In particular, the GaN layer treated with 0.02 M KOH and 0.02 M K 2 S 2 O 8 exhibited a 16-fold increase in specific capacitance compared to the pristine GaN layer.
With the proliferation of IoT devices, there is an escalating demand for enhanced computing and communication capabilities. Mobile Edge Computing (MEC) addresses this need by relocating computing resources to the netw...
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