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Flexible and transparent triboelectric nanogenerator based on high performance well-ordered porous PDMS dielectric film

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nano Research 2016年第12期9卷 3714-3724页

作者： Xianming He Xiaojing Mu Quan Wen Zhiyu Wen Jun Yang Chenguo Hu Haofei Shi Department of Applied Physics Chongqing University Chongqing 400044 China Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing 400044 China Microsystem Research Center Chongqing University Chongqing 400044 China Key Laboratory of Multi-Scale Manufacturing Technology Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences Chongqing 400714 China

A flexible and transparent triboelectric nanogenerator （FT-TENG） has great potential for application in self-powered biosensor systems, electronic skin and wearable electronic devices. However, improving the output performance with little damage to its optical properties is challenging. Herein, we have developed an FT-TENG that has a well-ordered nest-like porous polydimethylsiloxane （NP-PDMS） film and graphene transparent electrodes. The NP-PDMS film with ordered pores is fabricated by hydrochloric acid etching of 500 nm sized ZnO spheres made of aggregated nanoparticles, having a light transmittance of 81.8% and a water contact angle of 118.62°. The FT-TENG based on the NP-PDMS film with a porosity of 12%, gives a maximum output of 271 V and 7.8 μA, which are respectively, 3.7 and 2.1-fold of those of a TENG with a flat PDMS film. The peak output power reaches 0.39 mW with a load resistance of 9.01 MΩ. The dielectric constant and effective thickness of the NP-PDMS film and the capacitance and charge transfer of the FT-TENG are systematically investigated. This work provides a novel and effective method to enhance the performance of FT-TENGs with little damage to their optical properties.

关键词： porouspolydimethylsiloxane（PDMS） surface charge density nanogenerator flexibility transparent electrode

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Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

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Optoelectronics Letters 2016年第4期12卷 285-289页

作者：李东玲冯小飞温志渝尚正国佘引 National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Chongqing University Chongqing 400030 China Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China Chongqing University Chongqing 400030 China No.24 Reaearch Institute of China Electronics Technology Group Corporation Chongqing 400060 China

Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.

关键词： Deposition Deposition rates Integrated circuits MEMS Nitrides Optical properties Plasma CVD Refractive index Silicon nitride Stresses Vapor deposition

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High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO nanowires

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nano-micro Letters 2016年第3期8卷 247-253页

作者： Zhi Tao Yi-an Huang Xiang Liu Jing Chen Wei Lei Xiaofeng Wang Lingfeng Pan Jiangyong Pan Qianqian Huang Zichen Zhang School of Electronic Science and Engineering Southeast University State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano Fabrication Device and System Department of Precision Instrument Tsinghua University School of Information and Communication Engineering Beijing University of Posts and Telecommunications Institute of Semiconductors Chinese Academy of Science

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

关键词： Thin-film transistor Quantum dots Reduced graphene oxide ZnO nanowires

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Solar Driven Spintronics: Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications (Adv. Sci. 24/2019)

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Advanced science 2019年第24期6卷 1970147-1970147页

作者： Yifan Zhao Shishun Zhao Lei Wang Ziyao Zhou Junxue Liu Tai Min Bin Peng Zhongqiang Hu Shengye Jin Ming Liu Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric Research School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology Xi'an Jiaotong University Xi'an 710049 China Center for Spintronics and Quantum System State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University Xi'an Shaanxi 710049 China State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Rd. Dalian 116023 China

In article number https://***/10.1002/advs.201901994 , Ziyao Zhou, Ming Liu, and co‐workers propose a prototype photovoltaic spintronic device with an optical‐magneto‐electric tri‐coupled photovoltaic/magnetic thin film heterojunction, where magnetism can be manipulated directly by sunlight. Both in situ experiments and the first principle calculation results reveal that the photogenerated electrons doping in the cobalt film alter the band filling of this ferromagnetic film and manipulate the magnetization and magnetic anisotropy effectively.

关键词： ferromagnetic resonance low power magnetoelectric coupling organics solar cells

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Preparation of graphene-MoS_2 hybrid aerogels as multifunctional sorbents for water remediation

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science China Materials 2017年第11期60卷 1102-1108页

作者：陈博毕恒昌马青朗谭超良程洪飞陈也贺馨雁孙立涛林德岱黄岭张华 Nanyang Environment and Water Research Institute(NEWRI) Nanyang Technological UniversitySingapore 637141Singapore Interdisciplinary Graduate School(IGS) Nanyang Technological UniversitySingapore 639798Singapore Center for Programmable Materials School of Materials Science and EngineeringNanyang Technological UniversitySingapore 639798Singapore SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationCollaborative Innovation Center for Micro/Nano Fabrication Device and SystemSoutheast UniversityNanjing 210096China School of Civil and Environmental Engineering Nanyang Technological UniversitySingapore 639798Singapore Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Nationa1 Iiangsu Synergistic Innovation Center for Advanced Materials(SICAM)Nanjing Tech University(NanjingTech)Nanjing 211816China

The increasing demand of clean water and ef- fective way to recycle industrial wastewater has offered a new application for carbon-based three-dimensional （3D） porous networks as sorbents due to their superior sorption abilities. Through the surface modification and hybridization with functional materials, the physical and chemical properties of the 3D carbon-based materials can be engineered. In this work, graphene-MoS2 aerogels （GMAs） with bulky shape are synthesized via a one-pot hydrothermal method. The obtained GMAs show quick sorption rate and high sorption capacity towards a wide variety of contaminants. The sorption covers not only organic solvents or organic dyes, but also toxic heavy metals ions such as Hg2＋ and Pb2＋. More importantly, the sorption capacity towards metal ions can be optimized by simply changing the loading amount of MoS2.

关键词： Graphene MoS2 aerogels multifunctional sorbents water remediation

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Narrow photonic-plasmonic resonances in petal-like capped-nanopillar resonators for real-time, ultrasensitive colorimetric sensing 20

Narrow photonic-plasmonic resonances in petal-like capped-na...

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20th International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2016

作者： Fan, Jiaorong Wu, Wengang Zhu, Jia Yun, Huang National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing100871 China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9780979806490

A new type of colorimetric sensing device composed of metallic nanopetal-capped-nanopillar array metasurface is reported. The device exhibits narrowband and harmonic reflection feature, and thus has excellent ability to produce vivid and bright colors. This is due to the effect of surface-plasmon (SP) coupling in the array of three-dimensional plasmonic petal-capped-pillar nanoresonators. We employ the device as an ultrasensitive colorimetric plasmon-resonance sensor to detect different refractive-index solutions with much striking color differences. The metasurface-based sensor can visually detect the surrounding medium in real-time with refractive index resolution of 2x10-3 units.

关键词： Refractive index

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Fabrication of aluminum nitride films by reactive pulse DC magnetron sputtering for vibration energy harvester

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key Engineering Materials 2015年 645卷 1133-1138页

作者： Shang, Zhengguo Li, Dongling Wang, Shengqiang National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing China Microsystem Research Center Chongqing University Chongqing China

Aluminum nitride(AlN) film as a piezoelectric material has been used widely, particularly in vibration energy harvester due to its unique and enhanced properties such as high temperature resistance and compatibility with CMOS processes. In this work, AlN film with (002) preferred orientation was prepared on silicon wafers by pulse DC reactive magnetron sputtering(RMS), and the properties such as peak intensity, full width at half maximum (FWHM) and surface morphology were investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The preferred orientation was found to be sensitive to deposition conditions such as gas flow rate, power, bottom electrodes materials and substrates temperature. The results shows that the intensity was 1.1×105 counts, the FWHM was 1.9° when the temperature was 260°C. The film was used to fabricate the vibrated energy harvester successful and the power density reached about 3000uW/cm3 at the vibration frequency under 1g acceleration. © 2015 Trans Tech Publications, Switzerland.

关键词： Magnetron sputtering

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Design and simulation of corrugated diaphragm applied to the MEMS fiber optic pressure sensor

Design and simulation of corrugated diaphragm applied to the...

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IEEE International Conference on nano/micro Engineered and Molecular systems (NEMS)

作者： Yiming Gui Yangxi Zhang Guandong Liu Yilong Hao Chengchen Gao Institute of Microelectronics Peking University China National Key Laboratory of Science and Technology on Micro/Nano Fabrication China Innovation Center for Micro-Nano-electronics and Integrated System China Device and System Collaborative Innovation Center for Micro/Nano Fabrication Beijing China

ISBN: (纸本)9781509019489

In this paper, we propose a corrugated diaphragm applied to the fiber optic pressure sensor which needs a wide sensing range and a large deflection. The corrugated diaphragm can effectively improve the sensitivity of the sensor has been proved by ANSYS simulation. The stress concentration is weakened after the silicon is chamfered into corrugated diaphragm by isotropic etching process. The sensitivity of the corrugated diaphragm can reach to 0.44μ m/MPa which is two times larger than that of the same size planar diaphragm. The maximum sensing stress is up to 14MPa.

关键词： Stress Pressure sensors Sensitivity Optical fibers micromechanical devices Silicon

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Temperature-dependent optical response of phase-only nematic liquid crystal on silicon devices

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Chinese Optics Letters 2016年第11期14卷 85-89页

作者：张紫辰 Huan Xu 杨海宁尤政初大平 Institute of Microelectronics Chinese Academy of Sciences Electrical Engineering Division Department of EngineeringUniversity of Cambridge State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano FabricationDevice and System Department of Precision Instrument Tsinghua University

Wavelength-dependent birefringence and dielectric *** major optical properties of the nematie liquid crystal materials used in phase-only liquid crystal on silicon（LCOS） devices,are measured as a function of operating *** dynamic phase modulation depth and threshold voltage of these phase-only LCOS devices are also measured in the corresponding temperature range and compared with theoretical *** results show that the dynamic response time can he reduced significantly by an appropriate increase ol device operative temperature,while the necessary device elements,such as phase modulation depth and threshold voltage,can be maintained at the same time.

关键词： Birefringence Dielectric materials Display devices Liquid crystals Liquids Modulation Optical properties Phase modulation Threshold voltage

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Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme

Four-step FBAR Filters Design Method and SOI BOX Buffered Vi...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： GAO Yang CAI Xun HE Xuefeng Institute of Electronic Engineering China Academy of Engineering Physics State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsCAS School of Information Engineering Southwest University of Science and Technology National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator(FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active area of each FBAR unit. To get this, we made the resonance area value of series FBAR units and the ratio of resonance area value of parallel FBAR units and series FBAR units into two types of optimization parameters reasonably. Taking the given insertion loss and out-of-band rejection of filter as the optimization objective, we obtained the optimized values by the algorithm based on gradient in ADS software. The last step 4 aiming at minimizing filter passband ripple. In the design case, this aim is fulfilled by a novel FBARs' electrode layer thickness adjusting method, and intentionally slightly mismatches the series resonant frequency of the series FBAR units with the parallel resonant frequency of the parallel FBAR units. As in the design case results, a only 300 nm thick SiO 2 support layer need to survive the backside via-hole etching micro-fabrication process, so we proposed a buried oxide layer(BOX) buffered 2-step via-hole etching scheme, which taking advantage of the etching self-stop characteristic of BOX. Design case results show that insertion loss of the Rx filter is 0.6 d B, rejection in Tx frequency band is 40.4 d B and passband ripple is 0.4 d B. Thus we validate the feasibility of the design method.

关键词： Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme filter SOI

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