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The effect of generating body and Reynolds Numbers on improving fluid vibrating force in micro size

Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics 2011年第12期32卷 2056-2059页

作者： Ran, Jing-Yu Yang, Yuan National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing 400044 China Key Laboratory of Low-Grade Energy Utilization Technologies and Systems Chongqing University Chongqing 400044 China

The research on the effect of low Reynolds number and generating body on flow characteristics and fluid vibrating force is of high value to develop and utilize weak breeze energy. In this paper, flow conditions with different generating bodies (circular cylinder, triangle cylinder, square cylinder) and different Reynolds Numbers (20, 40, 60, 100, 200, 400, 500, 1000) are simulated using finite volume method. The flow characteristics and fluid force in different conditions are compared and analyzed. The results show that the maximum value and average value of fluid force, f¯t and ft,max, increase with Re increasing. At the same time, f¯t (triangle) > f¯t (square) > f¯t (circular);ft,max (triangle) > ft,max (square) > ft,max (circular). When Re=1000, ft (triangle)=0.112 N, ft (square)=0.0914 N, f¯t (circular)=0.077 N.

关键词： Reynolds number

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Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

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Journal of Semiconductors 2010年第6期31卷 27-33页

作者：何进郑睿张立宁张健林信南陈文新 Department of Electronics and Computer Engineering Hong Kong University of Science & Technology Micro & Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated MicrosystemsPeking UniversityShenzhen Graduate School Micro & Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Peking UniversityShenzhen Graduate School

A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion *** original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and *** these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

关键词： non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue

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Study on the influence of combustion in the combustion chamber of the porous media for MTPV system

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Harbin Gongye Daxue Xuebao/Journal of Harbin Institute of technology 2011年第SUPPL. 1期43卷 360-363页

作者： Ding, Jian-Ning Dong, Yu-Zhong Cheng, Guang-Gui Ling, Zhi-Yong Fan, Zhen Micro/Nano Science and Technology Center Jiangsu University Zhenjiang 212013 China Low-Dimension Material Micro/Nano Device and System Center Jiangsu Polytechnic University Changzhou 213164 China Key Laboratory of New Energy Engineering Changzhou 213164 China

micro-chamber is one of the key components of micro-thermophotovoltaic (MTPV) system, whose photon radiation ability can intensify with the rising of temperature, resulting in the raise of outputting power of the system. Therefore, it is essential for the MTPV system to rise the micro-combustion chamber temperature. This article analysizes and expounds the influences of the factors, including the ratio of hydrogen to oxygen, the total mixture flow and the outputting pressure of hydrogen and oxygen, on the distribution of temperature of the wall of micro-combustion chamber. The experiment results indicate that when the ratio of hydrogen to oxygen is 1.2:1, the wall of the micro-combustion chamber could achieve the highest temperature, which rises with the increasing of the total mixture flow and the outputting pressure of hydrogen and oxygen. Therefore, in order to obtain a higher temperature of the wall of micro-combustion chamber and a high efficiency of the system, 1.2:1 for the ratio of hydrogen to oxygen is most preferable. Also the total mixture flow and the outputting pressure of hydrogen and oxygen should be as high as possible.

关键词： Combustion chambers

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Simulation research of biphasic silicon thin film solar cell of different crystalline volume fraction

Simulation research of biphasic silicon thin film solar cell...

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2010 International Conference on Optics, Photonics and Energy Engineering, OPEE 2010

作者： Yuan, Ning-Yi Wang, Shu-Bo Ding, Jian-Ning Wang, Xiu-Qin Ye, Feng Zhang, Jia-Li Chen, Hong-Min Center of Low-dimension Materials Micro/Nano Device and System Jiangsu Polytechnic University Changzhou 213164 China Key Laboratory of New Energy Source Changzhou 213164 China Center of Micro/Nano Science and Technology College of Mechanical Engineering Jiangsu University Zhenjiang 212013 China

ISBN: (纸本)9781424452354

Optical and electrical parameters of biphasic silicon with different crystalline volume fraction (fc) were estimated via effective medium approximation method and experimental results. Then software AMPS-ID has been performed to investigate the influence of fc on biphasic silicon as the intrinsic layer on the performance of biphasic silicon single-junction and amorphous silicon/biphasic silicon double-junction solar cells. According to the simulation results, biphasic silicon thin film with approximate 50 % fc is suitable to serve as the intrinsic layer of the thin film solar cells, which can achieve the highest conversion efficiency. © 2010 IEEE.

关键词： Thin film solar cells

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The micro-structure and optical properties of Mn-doped ZnO thin film fabricated by sol-gel technique

The micro-structure and optical properties of Mn-doped ZnO t...

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IEEE International Conference on nano/micro Engineered and Molecular systems

作者： Wang, Xiu-Qin Ding, Jian-Ning Yuan, Ning-Yi Ding, Gu-Qiao Ni, JianLin Kan, Bao Center of Low-dimension Materials Micro/Nano Device and System Jiangsu Polytechnic University Changzhou 213164 China Center of Micro/Nano Science and Technology College of Mechanical Engineering Jiangsu University Zhenjiang 212013 China Key Laboratory of New Energy Source Changzhou 213164 China School of Mathematics and Physics Jiangsu Polytechnic University Changzhou 213164 China

ISBN: (纸本)9781424465439

We synthesized undoped and Mn-doped ZnO films on glass substrates using the sol-gel technique. The micro-structure, morphology and optical properties of ZnO films were studied by using X-ray diffraction, Atomic Force microscope and UV-visible transmission spectra. After annealed at a temperature lower than 550 °C by Rapid Thermal Processing (RTP), all the ZnO films are polycrystalline with a hexagonal wurtzite structure. For Mn-doped ZnO films, although no peak corresponding to manganese oxide is observed in XRD spectrums, the lattice constants of the films become larger and the optical band-gaps increase with the increase of annealing temperature, which is different from the result of un-doped ZnO films. These measurements indicate that Mn2+ has substituted for Zn2+ in the films even annealed at a temperature as low as 300 °C. ©2010 IEEE.

关键词： Optical properties

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Simulation research of biphasic silicon thin film solar cell of different crystalline volume fraction

Simulation research of biphasic silicon thin film solar cell...

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International Conference on Optics Photonics and Energy Engineering (OPEE)

作者： Ning-Yi Yuan Shu-Bo Wang Xiu-Qin Wang Jian-Ning Ding Feng Ye Jia-Li Zhang Hong-Min Chen Center of Low-dimensional Materials Micro Nano Device and System Jiangsu Polytechnic University Changzhou China Center of Micro/Nano Science & Technology College of Mechanical Engineering Jiangsu University Zhenjiang China Key Laboratory of New Energy Source Changzhou China Changzhou University Changzhou CN

ISBN: (纸本)9781424452347;9781424452354;9781424452361

Optical and electrical parameters of biphasic silicon with different crystalline volume fraction (fc) were estimated via effective medium approximation method and experimental results. Then software AMPS-1D has been performed to investigate the influence of fc on biphasic silicon as the intrinsic layer on the performance of biphasic silicon single-junction and amorphous silicon/biphasic silicon double-junction solar cells. According to the simulation results, biphasic silicon thin film with approximate 50 % fc is suitable to serve as the intrinsic layer of the thin film solar cells, which can achieve the highest conversion efficiency.

关键词： Semiconductor thin films Photovoltaic cells Crystallization Optical films Amorphous silicon Power engineering and energy Amorphous materials Degradation Laboratories Materials science and technology

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3D Modeling and Finite-Element Full-wave Simulation of TSV for Stack up SIP Integration Applications

3D Modeling and Finite-Element Full-wave Simulation of TSV f...

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2010 11th International Conference on Electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Lei Liang Min Miao Zhensong Li Bo Han Xin Sun Yufeng Jin Information Microsystem Institute Beijing Information Science and Technology University.No.35 Nort System & Standard Department Datang Mobile Communications Equipment Co. Ltd.No.29 Xueyuan Road H National Key Laboratory of Micro/Nano Fabrication Technology Peking University＃ 5 Yiheyuan Rd Ha

The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP)[1] and high-speed circuitry design[2]. The authors of this paper explore the 3D full-wave modeling of through Si vias (TSV) in multilayered SIP and simulate their effects on spectral performance and signal integrity with the help of finite element methodologies. The emphasis of the research is on the revealing of 3D electromagnetic field distribution on fundamental single and differential TSV interlayer interconnects, so that more detailed parasitic effects may be found and equivalent model closer to the reality can be obtained, compared with the methodology based on purely circuit analysis. And the effect of the variations in the TSV diameter and height and the effect of grounded TSV are revealed. Additionally, S21 performance and field distribution of two sort of paired vias are displayed. Waveports are adopted for the full-wave modeling and all the cases are in 0～10GHz range.

关键词： Through-silicon vias Integrated circuit modeling Solid modeling Three dimensional displays Finite element methods Couplings Circuit simulation

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Design and verified experiment of grating moving light modulator for HDTV

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Guangxue Xuebao/Acta Optica Sinica 2009年第SUPPL. 2期29卷 335-341页

作者： Zhang, Zhihai The Key Laboratory for Opto-Electronic Technology and System Ministry of Education Chongqing University Chongqing 400044 China National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing 400044 China

A novel MOEMS-based (micro-Opto-Electro-Mechanical systems) light modulator for laser project display was proposed, which is called Grating Moving Light Modulator (GMLM). It can modulate light by diffraction, and has a simple fabrication process and projection optical system. It is suitable to form 2D array modulator. To satisfy the requirement of HDTV projection system, the formulas and parameters for the key structure design of GMLM are given. The fabrication process is also designed to meet the special distinct of GMLM. Finally, experiments are carried out for the 16 × 16 GMLM array. The static and dynamic projection results of GMLM array are achieved by the laser projection demo system, which verifies the operation and projection principals of GMLM. The size of GMLM is measured as 52 μm × 52 μm. The operation voltage is measured as 6.7 V. The response frequency is measured as 11.9 kHz. Those parameters can satisfy the requirements of HDTV projector. But the uniformity and driving method of GMLM array need improvement. All of the above researches lay the foundation for the HDTV project display system based on GMLM.

关键词： High definition television

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A Web-Based Platform for nanoscale Non-classical device Modeling and Circuit Performance Simulation

A Web-Based Platform for Nanoscale Non-classical Device Mode...

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International Conference on Web Information systems and Mining (WISM)

作者： Hao Zhuang Frank He Xinnan Lin Lining Zhang Jian Zhang Xiufang Zhang Mansun Chan Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China Department of Electronic & Computer Engineering Hong Kong University of Science and Technology Hong Kong China

This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content, running embedding device and circuit programs, the platform produces several types of device characteristics output such as data texts and graphs on the web page for analysis, according to the simulation results and users' requests. Some nanoscale device modeling examples and the circuit simulation cases are demonstrated by the means of the platform configures and function application. It is shown that not only does this kind of platform address problems arising from the dependence on computer operating system of modeling and simulation software, the complexity of software and program update, but also helps researchers focus on their research on device physics and circuit design, display their research results and share latest research achievements or new technology online, which will accelerate the development of device modeling and circuit design technology in turn.

关键词： nanoscale devices Circuit optimization Circuit simulation Semiconductor device modeling Predictive models Computational modeling Circuit synthesis Libraries SPICE Hardware design languages

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Characteristic Analysis and the Experiment of Passive Matrix Addressing for Grating Light Modulator

Characteristic Analysis and the Experiment of Passive Matrix...

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中国微米纳米技术学会第十届学术年会暨第一届国际会议(1st International Conference of the Chinese Society of micro/nano technology)

作者： Jin Zhu Huang Shanglian Zhang Zhihai Wang Ning Zhang Jie Wei Wei The Key Laboratory of Fundamental Science of Micro/Nano Device & System Technology Chongqing400044China Optoelectronic Engineering Department Chongqing UniversityChongqing400044China

Grating Light Modulator (GLM) based on micro-Electro-Mechanical systems (MEMS) is applied in projection *** principle of GLM is introduced in the *** factors influencing the performance of passive matrix addressing for GLM are analyzed in *** the response frequency and the driving voltage are relative to the elastic coefficient of *** the elastic coefficient is larger,both response frequency and driving voltage are *** is indicated by analysis that in a m×n array when an all-selected pixel is actuated by a voltage V0,the voltages of half-selected pixel in row and column are respectively V0(m-1)/(m+n-1) and V0(n-1)/(m+n-1),and non-selected pixel's voltage is V0/(m+n-1).Finally,the operating voltage and the pull-in voltage are respectively 7.8V and 8.5V measured by the experiment,and these experimental values are very approximate to the theoretical *** GLM is actuated by a 7.8V square-wave voltage with lkHz frequency,the rising-edge time and the falling-edge time are respectively about 46.59μs and 44.77μ*** experiments indicate that the response frequency of GLM is about ***,the other experiment validates the correctness of crosstalk in a 16×16 GLM *** experiments provide a theoretical basis for improving the driver of GLM.

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