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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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Enhanced multiphoton photoluminescence in metaphotonics

Enhanced multiphoton photoluminescence in metaphotonics

引用

CLEO: QELS_fundamental science, QELS 2022

作者： Tonkaev, Pavel Fan, Yubin Wang, Yuhan Han, Jiecai Zalogina, Anastasia Tripathi, Aditya Lee, Hoo-Cheol Park, Hong-Gyu Makarov, Sergey Kruk, Sergey Song, Qinghai Xiao, Shumin Kivshar, Yuri Nonlinear Physics Center Research School of Physics Australian National University CanberraACT2601 Australia ITMO University St. Petersburg197101 Russia Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Shenzhen Graduate School Harbin Institute of Technology Shenzhen518055 China National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin150080 China Department of Physics Korea University Seoul02841 Korea Republic of Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

ISBN: (纸本)9781557528209

We study multiphoton photoluminescence from several types of nonlinear resonant metaphotonic structures. We develop a general theoretical approach to describe such nonlinear effects and confirm our predictions in experiments with perovskite metasurfaces and AlGaAs nanoantennas. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Photoluminescence

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Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier

arXiv

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arXiv 2024年

作者： Li, Shengyao Deng, Ya Hu, Dianyi Zhu, Chao Yang, Zherui Tian, Wanghao Wang, Xueyan Yue, Ming Wu, Qiong Liu, Zheng Wang, Xiao Renshaw Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore School of Materials Science and Engineering Nanyang Technological University Singapore639798 Singapore SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of Education Collaborative Innovation Center for Micro/Nano Fabrication Device and System Southeast University Nanjing210096 China School of Electrical and Electronic Engineering Nanyang Technological University Singapore639798 Singapore Faculty of Materials and Manufacturing Key Laboratory of Advanced Functional Materials Ministry of Education of China Beijing University of Technology Beijing100124 China CINTRA CNRS NTU/THALES UMI 3288 Research Techno Plaza Singapore637553 Singapore

Nonreciprocal electrical transport, characterized by an asymmetric relationship between current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, the field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while the eMCA is linked to spin-splitting arising from the absence of inversion symmetry. Both the SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics. Copyright © 2024, The Authors. All rights reserved.

关键词： nanosheets

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"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

arXiv

引用

arXiv 2023年

作者： Wei, Maoliang Xu, Kai Tang, Bo Li, Junying Yun, Yiting Zhang, Peng Wu, Yingchun Bao, Kangjian Lei, Kunhao Chen, Zequn Ma, Hui Sun, Chunlei Liu, Ruonan Li, Ming Li, Lan Lin, Hongtao State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Institute of Microelectronics the Chinese Academy of Sciences Beijing100029 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Zhejiang Hangzhou310030 China Institute of Advanced Technology Westlake Institute for Advanced Study Zhejiang Hangzhou310024 China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits. © 2023, CC BY.

关键词： Selenium compounds

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

引用

fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Tailoring the Anomalous Hall Effect in Van Der Waals Ferromagnet Fe3gete2

SSRN

引用

SSRN 2024年

作者： Wu, Kaile Wang, Qin Wang, Junshan Jiang, Jiaolin Zhao, Tian Zhao, Dong Han, Dan Quan, Zhiyong Ma, Zongmin Wang, Haomin Sang, Shengbo Ge, Yang Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System The Ministry of Education Taiyuan University of Technology Taiyuan030024 China College of Materials Science and Engineering Taiyuan University of Technology Taiyuan030024 China Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University Taiyuan030031 China State Key Laboratory of Dynamic Measurement Technology North University of China Shanxi Taiyuan030051 China School of Semiconductor and Physics North University of China Shanxi Taiyuan030051 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Shanxi Research Institute of 6D Artificial Intelligence Biomedical Science Taiyuan030024 China

Two-dimensional van der Waals magnetic materials have shown fascinating natural ferromagnetic properties at the atomic level, which has great potential in fields of low power spintronics, quantum computing and optical communication. Herein, the ferromagnetism and magnetic anisotropy of bulk Fe3GeTe2 (FGT) were investigated, and the testing results indicate a pronounced vertical magnetic anisotropy below the Curie temperature (Tc=165 K) of FGT. In addition, the anomalous Hall effect of FGT nanoflakes was studied at various temperatures and thicknesses by standard Hall bar device in detail. The results show the anomalous Hall resistance (0.764 Ω at 20 K decreased to 0.332 Ω at 140 K) and the obvious rectangular magnetic hysteresis rings below Tc (165 K). Furthermore, we calculated the carrier concentration (2.5×1022 cm-3 at 20K) and mobility (13.3 cm2/(v·s) at 20K) under large magnetic field (-6 T~6 T). Particularly, we demonstrated that the strong tailoring ability of the anomalous Hall effect for FGT-based magnetoelectric transport devices comes form the regulation of magnetic moment by sample thickness and magnetic field angle. The above experimental results verify that FGT is expected to be a prime candidate material for ultrathin 2D spintronic devices to the next generation. © 2024, The Authors. All rights reserved.

关键词： Germanium alloys

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Two Dimensional Pts2/Bn Heterostructure as an S-Scheme Photocatalyst with Enhanced Activity for Overall Water Decomposition

SSRN

引用

SSRN 2022年

作者： Wang, Biao Yuan, Hongkuan Yang, Tie Wang, Peng Kuang, Anlong Xu, Xiaohui Jiang, Yuwen Chen, Hong Dong, Fan School of Physical Science and Technology Southwest University Chongqing 400715 China School of Resources and Environment Institute of Fundamental and Frontier Science University of Electronic Science and Technology of China Chengdu611731 China Chongqing key Laboratory of Micro Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing 400715 China Key Laboratory of Luminescent and Real-Time Analytical Chemistry Ministry of Education School of Chemistry and Chemical Engineering Southwest University Chongqing 400715 China

Photocatalytic hydrogen production from water by utilizing the inexhaustible solar energy is a sustainable solution for the environmental pollution and energy crisis. Encouraged by the successful synthesis of PtS2and BN nanosheets and their suitable band edges, we have investigated the electronic and optical properties of two dimensional PtS2/BN heterojunction as the step-scheme (S-scheme) photocatalyst based on the hybrid DFT calculations in this work. In this system, the built-in electric field and band edge bending can retain useful electrons on the conduct band of BN and holes on the valence band of PtS2, which endows this system with stronger redox ability. Meanwhile, this electric field can efficiently separate photoinduced electron-hole pairs and improve photocatalytic efficiency. Compared with BN and PtS2single layers, the PtS2/BN heterojunction possesses smaller bandgap and can make better use of the visible and infrared light. Additionally, we have studied whether strains can tune its electronic and optical properties. This work aims to provide a method for constructing high-efficiency BN-based photocatalyst and illuminating the electron migration mechanism in S-scheme heterostructures. We have found thatPtS2/BN bilayer heterojunction is a promising S-scheme photocatalyst for overall water decomposition. © 2022, The Authors. All rights reserved.

关键词： Optical properties

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The consistent behavior of negative Poisson's ratio with interlayer interactions

arXiv

引用

arXiv 2022年

作者： Wang, Yancong Yu, Linfeng Zhang, Fa Chen, Qiang Zhan, Yuqi Zheng, Xiong Wang, Huimin Qin, Zhenzhen Qin, Guangzhao State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body College of Mechanical and Vehicle Engineering Hunan University Changsha410082 China State Key Laboratory of Robotics and System Harbin Institute of Technology Harbin150001 China Hunan Key Laboratory for Micro-Nano Energy Materials & Device School of Physics and Optoelectronics Xiangtan University Hunan Xiangtan411105 China School of Physics and Microelectronics Zhengzhou University Zhengzhou450001 China

Negative Poisson's ratio (NPR) is of great interest due to the novel applications in lots of fields. Films are the most commonly used form in practical applications, which involves multiple layers. However, the effect of interlayer interactions on the NPR is still unclear. In this study, based on first principles calculations, we systematically investigate the effect of interlayer interactions on the NPR by comparably studying single-layer graphene, few-layer graphene, h-BN, and graphene-BN heterostructure. It is found that they almost have the same geometry-strain response. Consequently, the NPR in bilayer graphene, triple-layer graphene, and graphene-BN heterostructure are consistent with that in single-layer graphene and h-BN. The fundamental mechanism lies in that the response to strain of the orbital coupling are consistent under the effect of interlayer interactions. The deep understanding of the NPR with the effect of interlayer interactions as achieved in this study is beneficial for the future design and development of micro-/nanoscale electromechanical devices with novel functions based on nanostructures. © 2022, CC BY-NC-SA.

关键词： Graphene

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microstructure and Mechanical Performance Study of Crmnfeconi High-Entropy Alloys after Cryogenic Treatment

SSRN

引用

SSRN 2023年

作者： Qin, Yulin Wu, Changgui Long, Xiaojiang Qiu, Wenbin Zhou, Lvjun Tang, Jiafeng Zhang, Ning Yin, Ming Chen, Longqing Zhu, Jun College of Physics Sichuan University Sichuan Chengdu610065 China Kunming Metallurgical Research Institute Co. Ltd Yunnan Kunming650031 China Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems Yangtze Normal University Chongqing Fuling408100 China Department of Fundamental Courses Wuxi Institute of Technology Wuxi214121 China Key Laboratory of Radiation Physics and Technology Ministry of Education Institute of Nuclear Science and Technology Sichuan University Chengdu610064 China School of Mechanical Engineering Sichuan University Chengdu610064 China

In recent years, significant progress has been made in the development of high-entropy alloys (HEAs) that possess both high strength and high ductility. The application of the metastable engineering strategy to enhance the strength and ductility of materials has also gradually been employed, and cryogenic treatment is one of the important techniques in this regard. Through cryogenic liquid nitrogen treatment, this study significantly enhanced the strength and ductility of (CrMnFeCoNi)45Fe55 and (CrMnFeCoNi)40Fe60 HEAs prepared by laser melting deposition (LMD). Compared to the initial samples, the fracture strength of (CrMnFeCoNi)45Fe55 increased from 480 MPa (at room temperature) to 980 MPa (after cryogenic treatment), and the fracture elongation alloy increased from 60% (at room temperature) to 62% (after cryogenic treatment). The fracture strength of (CrMnFeCoNi)40Fe60 alloy increased from 550 MPa (at room temperature) to 1150 MPa (after cryogenic treatment), and the fracture strength decreased from 55% (at room temperature) to 45% (after cryogenic treatment). This is attributed to the fact that cryogenic liquid nitrogen treatment reduces the stacking fault energy of the alloy system, facilitating the formation of stacking faults. The formation of stacking faults, in turn, provides nucleation sites for phase transformations, promoting the transformation of the matrix from face-centered cubic (FCC) phase to body-centered cubic (BCC) phase or other phases. This activates phase transformation-induced plasticity effects (TRIP). Simultaneously, the bidirectional coexistence mechanism achieves a favorable balance between strength and ductility. This provides a new ideas and method for obtaining high-entropy alloys with excellent comprehensive mechanical properties. © 2023, The Authors. All rights reserved.

关键词： microstructure

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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints

arXiv

引用

arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

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