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Tuned single atom coordination structures mediated by polarization force and sulfur anions for photovoltaics

nano Research 2021年第11期14卷 4025-4032页

作者： Hongyu Jing Zhengyan Zhao Chunyang Zhang Wei Liu Danyang Wu Chao Zhu Ce Hao Jiangwei Zhang Yantao Shi State Key Laboratory of Fine Chemicals Department of ChemistrySchool of Chemical EngineeringDalian University of TechnologyDalian116024China Department of Chemistry Tsinghua UniversityBeijing100084China SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationCollaborative Innovation Center for Micro/Nano FabricationDevice and SystemSoutheast UniversityNanjing210096China State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian116023China

Impeding high temperature sintering is challengeable for synthesis of carbon-supported single-atom catalysts (C-SACs), which requires high-cost precursor and strictly-controlled procedures. Herein, by virtue of the ultrastrong polarity of salt melts, sintering of metal atoms is effectively suppressed. Meanwhile, doping with inorganic sulfur anions not only produces sufficient anchoring sites to achieve high loading of atomically dispersed Co up to 13.85 wt.%, but also enables their electronic and geometric structures to be well tuned. When served as a cathode catalyst in dye-sensitized solar cells, the C-SAC with Co-N4-S2 moieties exhibits high activity towards the iodide reduction reaction (IRR), achieving a higher power conversion efficiency than that of conventional Pt counterpart. Density function theory (DFT) calculations revealed that the superior IRR activity was ascribed to the unique structure of Co-N4-S2 moieties with lower reaction barriers and moderate binding energy of iodine on the Co center, which was beneficial to I2 dissociation.

关键词： inorganic sulfur ions coordination structure regulating anti-sintering dye-sensitized solar cells

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All-optical nanoscale thermometry with silicon carbide color centers

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Photonics Research 2024年第8期12卷 1696-1702页

作者： CHENGYING LIU HAIBO HU ZHENGTONG LIU SHUMIN XIAO JUNFENG WANG YU ZHOU QINGHAI SONG Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic SystemsHarbin Institute of TechnologyShenzhen 518055China Pengcheng Laboratory Shenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area Shenzhen-Hong Kong International Science and Technology ParkShenzhen 518045China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China College of Physics Sichuan UniversityChengdu 610065China

All-optical thermometry plays a crucial role in precision temperature measurement across diverse *** defects in solids are one of the most promising sensors due to their excellent sensitivity,stability,and ***,it faces limitations,such as the microwave heating effect and the complexity of spectral *** these challenges,we introduce a novel approach to nanoscale optical thermometry using quantum defects in silicon carbide(SiC),a material compatible with complementary metal-oxide-semiconductor(CMOS)*** method leverages the intensity ratio between anti-Stokes and Stokes emissions from SiC color centers,overcoming the drawbacks of traditional techniques such as optically detected magnetic resonance(ODMR)and zero-phonon line(ZPL)*** technique provides a real-time,highly sensitive(1.06%K^(-1)),and diffraction-limited temperature sensing protocol,which potentially helps enhance thermal management in the future miniaturization of electronic components.

关键词： carbide optical centers

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Effects of interlayer coupling on the excitons and electronic structures of WS_(2)/hBN/MoS_(2) van der Waals heterostructures

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nano Research 2022年第3期15卷 2674-2681页

作者： Xudan Zhu Junbo He Rongjun Zhang Chunxiao Cong Yuxiang Zheng Hao Zhang Songyou Wang Haibin Zhao Meiping Zhu Shanwen Zhang Shaojuan Li Liangyao Chen Key Laboratory of Micro and Nano Photonic Structures Ministry of EducationShanghai Engineering Research Center of Ultra-Precision Optical ManufacturingSchool of Information Science and EngineeringFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Laboratory of Thin Film Optics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Grating Technology Laboratory Changchun Institute of Optics and Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China

Inserting hexagonal boron nitride(hBN)as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device ***,the physical picture of interlayer coupling effect during incorporation of monolayer(1L-)hBN is not explicit *** this article,spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS_(2)/MoS_(2)and WS_(2)/hBN/MoS_(2)van der Waals *** find that 1L-hBN can only slightly block the interlayer electron transfer from WS_(2)layer to MoS_(2)***,insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric ***,the exciton binding energies in WS_(2)/hBN/MoS_(2)heterostructures blueshift comparing to those in WS_(2)/MoS_(2)*** this exciton binding energies tuning process,the reducing dielectric screening effect plays a leading *** the meantime,the quasi-particle(QP)bandgap remains unchanged before and after 1L-hBN insertion,which is attributed to released quantum confinement and decreased dielectric screening effects canceling each *** QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS_(2)/hBN/MoS_(2)heterostructures.

关键词： two-dimensional(2D)van der Waals heterostructure interlayer coupling excitons critical points spectroscopic ellipsometry

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Hundredfold increase of stimulated Brillouin-scattering bandwidth in whispering-gallery mode resonators

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Photonics Research 2023年第6期11卷 917-924页

作者： GUOPING LIN JINGYI TIAN TANG SUN QINGHAI SONG YANNE K.CHEMBO Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System School of ScienceHarbin Institute of TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Shenzhen 518055China Department of Electrical and Computer Engineering&Institute for Research in Electronics and Applied Physics(IREAP) University of MarylandCollege ParkMaryland 20742USA

Backward stimulated Brillouin scattering(SBS)is widely exploited for various applications in optics and *** typically features a narrow gain bandwidth of a few tens of megahertz in fluoride *** we report a hundredfold increase of SBS bandwidth in whispering-gallery mode *** crystalline orientation results in a large variation of the acoustic phase velocity upon propagation along the periphery,from which a broad Brillouin gain is *** 2.5 GHz wide Brillouin gain profile is theoretically found and experimentally *** phenomena with Brillouin shift frequencies ranging from 11.73 to 14.47 GHz in ultrahigh Q Z-cut magnesium fluoride cavities pumped at the telecommunication wavelength are ***,the Brillouin-Kerr comb in this device is *** 400 comb lines spanning across a spectral window of 120 nm are *** finding paves a new way for tailoring and harnessing the Brillouin gain in crystals.

关键词： scattering pumped Brillouin

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Facile synthesis of ironenickelecobalt ternary oxide(FNCO)mesoporous nanowires as electrode material for supercapacitor application

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Journal of Materiomics 2022年第1期8卷 221-228页

作者： Muhammad Usman Muhammad Tayyab Ahsan Sofia Javed Zeeshan Ali Yiqiang Zhan Irfan Ahmed Sajid Butt Mohammad Islam Asif Mahmood M.Aftab Akram School of Chemical and Materials Engineering National University of Sciences and Technology(NUST)Sector H-12Islamabad44000Pakistan Department of Materials Science and Engineering College of EngineeringPeking University100871BeijingChina State Key Laboratory of ASIC and System Center of Micro-Nano SystemSISTFudan UniversityShanghai200433China Department of Materials Science and Engineering Institute of Space TechnologyIslamabad44000Pakistan New Mexcico Institute of Mining&Technology SocorroNM 87801USA School of Chemical and Biomolecular Engineering The University of Sydney2006SydneyAustralia

Transition Metal Oxides have drawn significant attention due to their reversible chemical redox reaction and long-life *** agglomeration and shrinkage/expansion of transition metal oxides in the nanosize regime have a noticeable effect on their electrochemical *** in this work,mesoporous nanowires(NWs)with a typical composition of iron-nickel-cobalt ternary oxide(FNCO)are synthesized using a simple,facile and cost-effective hydrothermal process followed by furnace *** NWs are then extensively investigated as an electrode material for supercapacitor *** compare the electrochemical properties,nanowires of nickel-cobalt oxide(NCO),iron-cobalt oxide(FCO)and cobalt oxide(CO)were also produced by following the same *** FNCO NWs are found to overcome the shortcomings in the electrochemical energy storage devices by exhibiting higher values of specific capacitance(2197 Fg^(-1))and energy density(109 Whkg^(-1))at 1 Ag^(-1) current ***,the FNCO NWs also showed a cyclic charge/discharge stability of 96%even up to 20,000 ***,a FNCO//graphene asymmetric device,fabricated with FNCO NWs and graphene as positive and negative electrodes,respectively,which exhibit high energy density(47 Whkg^(-1)),power density(375 Wkg^(-1))and excellent capacitance retention(86%)after 15,000 cycles.

关键词： Electrochemistry Hydrothermal synthesis nanowires Supercapacitor Transition metal oxides

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High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga_(2)O_(3)

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npj Flexible Electronics 2022年第1期6卷 457-465页

作者： Xiao-Xi Li Guang Zeng Yu-Chun Li Hao Zhang Zhi-Gang Ji Ying-Guo Yang Man Luo Wei-Da Hu David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan University200433 ShanghaiChina National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University200240 ShanghaiChina Shanghai Synchrotron Radiation Facility(SSRF) Zhangjiang LabShanghai Advanced Research Institute&Shanghai Institute of Applied PhysicsChinese Academy of Sciences201204 ShanghaiChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences200083 ShanghaiChina

Deep-ultraviolet(DUV)phototransistors have shown great potential applications in UV imaging,artificial intelligence,and wearable *** a large number of wide bandgap semiconductors,the quasi-two-dimensionalβ-Ga_(2)O_(3) is considered as an ideal candidate for DUV photodetector ***,we report a high responsivity(R)and fully flexible Ta-dopedβ-Ga_(2)O_(3) DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32×10^(6) A/W,a large detectivity of 5.68×10^(14) Jones,a great photo-to-dark current ratio of 1.10×10^(10)%,a high external quantum efficiency of 6.60×10^(8)%,and an ultra-fast response time of~3.50 ***,the flexible Ta-dopedβ-Ga_(2)O_(3) device also displays high reliability and mechanical flexibility that can sustain well after over 1×10^(4) bending ***,high-contrast imaging of UV light was obtained on the flexible DUV detector arrays,which can be efficiently trained and recognized by an artificial neural *** findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexibleβ-Ga_(2)O_(3) DUV phototransistors,providing an inspiration for the future work in artificial intelligence and bionic robot fields.

关键词： transistor responsivity artificial

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Chalcogenide Integrated nanophotonics and Its Potential for Quantum Photonics

Chalcogenide Integrated Nanophotonics and Its Potential for ...

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Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Kunhao Lei Kai Xu Kangjian Bao Jiawei Weng Lan Li Hongtao Lin The State Key Lab of Brain-Machine Intelligence Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China The Key Laboratory of 3D Micro/ Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou Zhejiang China Institute of Advanced Technology Westlake Institute for Advanced Study Hangzhou Zhejiang China

Due to the high optical nonlinearity and nonvolatile phase-changing properties, chalcogenide integrated nanophotonics are emerging for entangling photon generation and nonvolatile quantum states operation. We will rev... 详细信息

ISBN: (数字)9798350379266

ISBN: (纸本)9798350379273

关键词： Integrated optics Chalcogenides nanophotonics Reviews Optical device fabrication Optical resonators Quantum state Optical network units Optical materials Quantum networks

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Doping induced multiferroicity and quantum anomalous Hall effect in α-In2Se3 thin films

arXiv

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arXiv 2024年

作者： Tian, Zhiqiang Li, Jin-Yang Ouyang, Tao Liu, Chao-Fei Liu, Ziran Li, Si Pan, Anlian Chen, Mingxing Key Laboratory for Matter Microstructure and Function of Hunan Province Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education School of Physics and Electronics Hunan Normal University Changsha410081 China School of Physics Northwest University Shaanxi Key Laboratory for Theoretical Physics Frontiers Xi’an710127 China Hunan Key Laboratory for Micro-Nano Energy Materials and Device School of Physics and Optoelectronics Xiangtan University Hunan Xiangtan411105 China School of Science Jiangxi University of Science and Technology Ganzhou341000 China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and Engineering Hunan University Changsha410082 China State Key Laboratory of Powder Metallurgy Central South University Changsha410083 China

In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, α-In2Se3 thin films were found to possess ferroelectricity and flat bands. In this work, using first-principles calculations, we find that for the monolayer, there is a Weyl point at Γ in the flat band, where the inclusion of the spin-orbit coupling opens a gap. Shifting the Fermi level into the spin-orbit gap gives rise to nontrivial band topology, which is preserved for the bilayer regardless of the interlayer polarization couplings. We further calculate the Chern number and edge states for both the monolayer and bilayer, for which the results suggest that they become quantum anomalous Hall insulators under appropriate dopings. Moreover, we find that the doping-induced magnetism for In2Se3 bilayer is strongly dependent on the interlayer polarization coupling. Therefore, doping the flat bands in In2Se3 bilayer can also yield multiferroicity, where the magnetism is electrically tunable as the system transform between different polarization states. Our study thus reveals that multiferroicity and nontrivial band topology can be unified into one material for designing multifunctional electronic devices. © 2024, CC BY.

关键词： Topology

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Study on Properties of Mnalc Magnetic Powder and Bulk Magnets

SSRN

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SSRN 2023年

作者： Chang, Xiangpeng Shi, Chao Du, Lunjia Lin, Luo Guo, Donglin Li, Chunhong Ma, Yilong College of Metallurgy and Materials Engineering Chongqing University of Science and Technology Chongqing401331 China Key Laboratory of Electromagnetic Processing of Materials Ministry of Education Northeastern University Shenyang110819 China Chongqing Key Laboratory of Nano/Micro Composite Materials and Device Chongqing401331 China

Mn55Al45C2 ingot was prepared using arc-melting technology, followed by annealing, tempering, grinding, orientation, and hot-pressing to obtain high-performance magnetic powder and dense bulk samples. The phase composition, microstructure, and magnetic properties of the samples were characterized using X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and a magnetic measurement system. After annealing and tempering, the ingot exhibited a high τ-phase content. The particle size of the MnAlC magnetic powder decreased with increasing grinding time, and after 20 h of hand-grinding, the average size of the powder was less than 6 μm. The coercivity of the powder increased with grinding time, while the saturation magnetization decreased. The maximum saturation magnetization value obtained was 72.7 emu/g, and the maximum coercivity value was 3665 Oe. Following magnetic field orientation treatment, the coercivity of the MnAlC magnetic powder reached 5862 Oe, indicating the successful formation of magnetic anisotropy. The bulk MnAlC magnets obtained through hot-pressing exhibited a coercivity of 3139 Oe. In conclusion, the preparation process involving arc-melting, annealing, tempering, grinding, orientation, and hot-pressing successfully produced MnAlC magnetic powder with high τ-phase content and anisotropic magnetic properties. Further optimization is required to improve the magnetic properties of the bulk MnAlC magnets. © 2023, The Authors. All rights reserved.

关键词： Scanning electron microscopy

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Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires

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nano Research 2021年第11期14卷 3961-3968页

作者： Jiamin Sun Mingming Han Meng Peng Lei Zhang Dong Liu Chengcheng Miao Jiafu Ye Zhiyong Pang Longbing He Hailu Wang Qing Li Peng Wang Lin Wang Xiaoshuang Chen Chongxin Shan Litao Sun Weida Hu Zai-xing Yang School of Physics and School of Microelectronics Shandong UniversityJinan250100China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan430074China SEU-FEI Nano-Pico Center Key Lab of MEMS of Ministry of EducationCollaborative Innovation Center for Micro/Nano FabricationDevice and SystemSoutheast UniversityNanjing210096China School of Physics and Photoelectric Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou450001China

As one of the most important narrow bandgap ternary semiconductors, GaAs1−xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1−xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1−xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances.

关键词： GaAs1−xSbx nanowire stoichiometry effect full-composition-range field-effect hole mobility near-infrared photodetection

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