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Wafer bow control of extended wavelength InGaAs photodetector materials by strain tailoring

Materials Science in Semiconductor Processing 2025年 197卷

作者： Liu, Bowen Gu, Yi Yin, Lihao Huang, Huijuan Li, Kang Fan, Liuyan Zhou, Hong Chen, Pingping Yu, Chunlei Li, Tao Shao, Xiumei Li, Xue Gong, Haimei National Key Laboratory of Infrared Detection Technologies Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Wuxi Zhongke Dexin Sensing Technology Co. Ltd. Jiangsu Wuxi214135 China University of Chinese Academy of Sciences Beijing100049 China

The wafer bow caused by lattice mismatch between metamorphic InGaAs epitaxial layer and InP substrate has become one of the key factors limiting the large-scale development of extended wavelength InGaAs focal plane array photodetectors. By introducing tensile strain in InAlAs buffer layers and InAlAs cap layer to compensate the compressive strain caused by lattice mismatch, the wafer bow was decreased from 55.9 μm to 22.2 μm. The influence of strain compensation structure on the anisotropy of metamorphic InGaAs materials was investigated by stress distribution, surface morphology, and PL uniformity. XRD and PL characterizations indicate that small tensile strain in InAlAs buffer layers did not reduce the quality of metamorphic InGaAs epitaxial material. This study shows that strain compensation is an effective method to control wafer bow and decrease anisotropy of metamorphic InGaAs materials grown on InP substrate. © 2025

关键词： Lattice mismatch

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions 3

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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3rd International Conference on System Reliability and Safety Engineering, SRSE 2021

作者： Lai, Canxiong Sun, Wen Yang, Shaohua Zhou, Bin Sci. and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401609

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking. © 2021 IEEE.

关键词： Semiconducting indium gallium arsenide

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A Low Complexity Lossless Compression Based on General Code Table for infrared Images

SSRN

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SSRN 2024年

作者： Zhu, Yaohua Zhang, Yong Huang, Mingsheng Zhu, Yanghang Key Laboratory of Infrared System Detection and Imaging Technology Chinese Academy of Sciences Shanghai200083 China Shanghai Institute of Technical Phvsics Chinese Academy of Sciences Shanghai200083 China University of Chinese Academy of Sciences Beijing100049 China

In order to improve the storage and transmission of 14-bit image data acquired by line scanning infrared detectors, this paper proposes a novel method to realize real-time and efficient compression for infrared images. The proposed method utilizes the features of infrared images to reduce image redundancy, then a novel and improved Huffman coding is employed to achieve compression. This paper proposes a method for obtaining a general Huffman code table to increase compression speed and a trimming Huffman tree algorithm to reduce complexity caused by long codes of 14-bit images with low-loss compression ratios. The compression based on general code table avoids counting pixels and uses a simple rule to lookup code table that significantly improves the compression speed. The longest code in the general code table is employed to replace all the long codes in the 14-bit image, enabling low-complexity lossless compression. The proposed method outperforms other commonly used algorithms, which is very suitable for the compression of line scanning panoramic infrared images. The algorithmic idea can be applied not only to 14-bit images, but also to more-bit images. © 2024, The Authors. All rights reserved.

关键词： Trees (mathematics)

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Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE

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Chinese Physics B 2021年第3期30卷 430-435页

作者： Di-Di Li Jing-Jing Chen Xu-Jun Su Jun Huang Mu-Tong Niu Jin-Tong Xu Ke Xu Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China Suzhou Nanowin Science and Technology Co. Ltd.Suzhou 215123China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy(HVPE)have been fabricated and structurally *** crystalline quality and surface morphology of as-grown AlN films with various V/III ratios were studied and *** XRD results showed that the crystalline quality of the AlN film could be optimized when the growth V/III ratio was *** the same time,the full width at half-maximum(FWHM)values of(0002)-and(10¯12)-plane were 64 arcsec and 648 arcsec,*** revealed by AFM,the AlN films grown with higher V/III ratios of 150 and 300 exhibited apparent hillock-like surface structure due to the low density of screw threading dislocation(TD).The defects microstructure and strain field around the HVPE-AlN/sputtered-AlN/sapphire interfaces have been investigated by transmission electron microscopy(TEM)technique combined with geometric phase analysis(GPA).It was found that the screw TDs within AlN films intend to turn into loops or half-loops after originating from the AlN/sapphire interface,while the edge ones would bend first and then reacted with others within a region of 400 nm above the ***,part of the edge TDs propagated to the surface *** GPA analysis indicated that the voids extending from sapphire to HVPE-AlN layer were beneficial to relax the interfacial strain of the best quality AlN film grown with a V/III ratio of 150.

关键词： hydride vapor phase epitaxy(HVPE) AlN threading dislocation(TD) sputter-deposition

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SWIR Fluorescenceimaging In Vivo Monitoring and Evaluating Implanted M2 Macrophages in Skeletal Muscle Regeneration

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Engineering 2024年第2期33卷 283-294页

作者： Mo Chen Yuzhou Chen Sijia Feng Shixian Dong Luyi Sun Huizhu Li Fuchun Chen Nguyen Thi Kim Thanh Yunxia Li Shiyi Chen You Wang Jun Chen Sports Medicine Institute of Fudan University Department of Sports MedicineHuashan HospitalFudan UniversityShanghai 200040China Department of Bone and Joint Surgery Department of OrthopedicsRenji HospitalSchool of MedicineShanghai Jiaotong UniversityShanghai 200127China Department of Anatomy and Physiology School of MedicineShanghai Jiao Tong UniversityShanghai 200025China Key Laboratory of Infrared System Detection&Imaging Technology Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Biophysics Group Department of Physics and AstronomyUniversity College LondonLondon WC1E 6BTUK Healthcare Biomagnetic and Nanomaterials Laboratories University College LondonLondon W1S 4BSUK

Skeletal muscle has a robust regeneration ability that is impaired by severe injury,disease,and *** in a decline in skeletal muscle ***,improving skeletal muscle regeneration is a key challenge in treating skeletal muscle-related *** to their significant role in tissue regeneration,implantation of M2 macrophages(M2MФ)has great potential for improving skeletal muscle ***,we present a short-wave infrared(SWIR)fluorescence imaging technique to obtain more in vivo information for an in-depth evaluation of the skeletal muscle regeneration effect after M2MФ*** fluorescence imaging was employed to track implanted M2MФin the injured skeletal muscle of mouse *** is found that the implanted M2MФaccumulated at the injury site for two ***,SWIR fluorescence imaging of blood vessels showed that M2MФimplantation could improve the relative perfusion ratio on day 5(1.09±0.09 vs 0.85±0.05;p=0.01)and day 9(1.38±0.16 vs 0.95±0.03;p=0.01)post-injury,as well as augment the degree of skeletal muscle regencration on day 13 ***,multiple linear regression analyses determined that post-injury time and relative perfusion ratio could be used as predictive indicators to evaluate skeletal muscle *** results provide more in vivo details about M2MФin skeletal muscle regeneration and confirm that M2MФcould promote angiogenesis and improve the degree of skeletal muscle repair,which will guide the research and development of M2MФimplantation to improve skeletal muscle regeneration.

关键词： In vivo Short-wave infrared Skeletal muscle Macrophage Regeneration

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Sal²RN: A Spatial-Spectral Salient Reinforcement Network for Hyperspectral and LiDAR Data Fusion Classification

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IEEE Transactions on Geoscience and Remote Sensing 2023年 61卷 1页

作者： Li, Jiaojiao Liu, Yuzhe Song, Rui Li, Yunsong Han, Kailiang Du, Qian Xidian University State Key Laboratory of Integrated Service Networks Xi'an710071 China Cas Key Laboratory of Spectral Imaging Technology Xi'an710119 China Shanghai Institute of Technical Physics Chinese Academy of Sciences Key Laboratory of Intelligent Infrared Perception Shanghai200083 China Mississippi State University Department of Electrical and Computer Engineering StarkvilleMS39762 United States

Hyperspectral image (HSI) and light detection and ranging (LiDAR) data fusion have been widely employed in HSI classification to promote interpreting performance. In the existing deep learning methods based on spatial-spectral features, the features extracted from different layers are treated fairly in the learning process. In reality, features extracted from the continuous layers contribute differentially to the final classification, such as large tracts of woodland and agriculture typically count on shallow contour features, whereas deep semantic spectral features have meaningful constraints for small entities like vehicles. Furthermore, the majority of existing classification algorithms employ a patch input scheme, which has a high probability to introduce pixels of different categories at the boundary. To acquire more accurate classification results, we propose a spatial-spectral saliency reinforcement network (Sal2RN) in this article. In spatial dimension, a novel cross-layer interaction module (CIM) is presented to adaptively alter the significance of features between various layers and integrate these diversified features. Moreover, a customized center spectrum correction module (CSCM) integrates neighborhood information and adaptively modifies the center spectrum to reduce intraclass variance and further improve the classification accuracy of the network. Finally, a statistically based feature weighted combination module is constructed to effectively fuse spatial, spectral, and LiDAR features. Compared with traditional and advanced classification methods, the Sal2RN achieves the state-of-the-art classification performance on three open benchmark datasets. © 1980-2012 IEEE.

关键词： Optical radar

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Optical Waveguide in Thermally Developed Photo-Thermo-Refractive Glass Substrate 9

Optical Waveguide in Thermally Developed Photo-Thermo-Refrac...

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9th Symposium on Novel Photoelectronic Detection technology and Applications

作者： Hao, Yinlei Guo, Xiao Peng, Xiao Wu, Haoze Wang, Shiyong Meng, Haoran Liu, Xinyue Chen, Xinyang College of Information Science & Electronic Engineering Zhejiang University Hangzhou310027 China Key Laboratory of Infrared System Detection and Imaging Technology Chinese Academy of Sciences Shanghai200083 China Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun130033 China Shenzhen Institute of Zhejiang University Shenzhen518057 China Shanghai Astronomical Observatory Chinese Academy of Sciences Shanghai200030 China

ISBN: (纸本)9781510664432

Photo-thermo-refractive (PTR) glasses are a new category of materials that possess special characteristics of refractive index decrement induced by UV exposure and subsequent thermal development. PTR glasses have been extensively utilized for the fabrication of various volume Bragg grating, and are expected to play an important role in the construction of high-performance guided-wave devices. Investigations on the optical waveguide fabrication process in thermally developed PTR glass Substrate are demonstrated. Optical grade PTR glass of the SiO2-Al2O3-Na2O-ZnO-NaFKBr system and doped with Ce, Ag, Sb, and Sn, is firstly melted, and then glass wafers made of the homemade PTR glass are UV exposed and thermal developed, during which nanometer-sized NaF crystalline is formed in these PTR glass wafers. The thermally developed PTR glass wafers are finally subjected to conventional glass-based optical waveguide melt salt thermal Ag+/Na+ ion exchange and subsequently field-assisted ion diffusion for waveguide fabrication. Results exhibited that buried channel optical waveguide, with Ag+ doped waveguide core dimension of approximately 9.5μm×8.6μm buried 5.2μm under the substrate surface can be obtained by the current procedure. In the current paper, the feasibility of implementing buried waveguide fabrication in thermally developed PTR glass materials is experimentally demonstrated. Since the shape and dimension of the waveguide core is well matched to that of single-mode fiber, and the buried waveguide eliminates scattering loss at the glass substrate surface, the buried optical waveguide is expected to find applications in guided-wave device fabrication. © 2023 SPIE.

关键词： Ion exchange

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Optical Waveguide Manufactured in Photo-Thermo-Refractive Glass Substrate by Ion Exchange 2

Optical Waveguide Manufactured in Photo-Thermo-Refractive Gl...

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Advanced Optical Manufacturing Technologies and Applications 2022, AOMTA 2022 and 2nd International Forum of Young Scientists on Advanced Optical Manufacturing, YSAOM 2022

作者： Hao, Yinlei Wu, Haoze Guo, Xiao Peng, Xiao Wang, Shiyong Meng, Haoran Liu, Xinyue Chen, Xinyang College of Information Science & Electronic Engineering Zhejiang University Hangzhou310027 China Key Laboratory of Infrared System Detection and Imaging Technology Chinese Academy of Sciences Shanghai200083 China Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun130033 China Shenzhen Institute Zhejiang University Shenzhen518057 China Shanghai Astronomical Observatory Chinese Academy of Sciences Shanghai200030 China

ISBN: (纸本)9781510661264

Photo-thermo-refractive (PTR) glasses exhibit promising characteristics for volume Bragg grating fabrication, one of key devices for construction of high performance lasers, among other optical device and systems. Aiming at employing this type of glass materials in the field of integrated photonics, buried optical channel waveguide is manufactured in PTR glass substrate by Ag+/Na+ thermal ion exchange and subsequent field assisted ion migration. The Ag+ doped zone in glass substrate, which is also the waveguide core, can be driven to several micrometers under the glass substrate surface, which decreases the propagation loss to a value as low as 0.12dB/cm, by eliminate scattering loss at glass substrate defects. Cross section of the waveguide core can be also engineered to match the core of single mode fiber, ensures a low coupling loss to single mode fiber. Analysis demonstrated that the buried optical waveguide fabrication proves can be expected to be applied in functional integrated optical device implementation. © 2023 SPIE.

关键词： Ion exchange

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High-speed ultra-broadband detection based on interfacial work function internal photoemission detector

arXiv

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arXiv 2024年

作者： Huang, Siheng Yuan, Xin Ma, Xuhong Yu, Quan Liu, Ying Pan, Chenjie Tan, Cheng Xu, Gangyi Li, Hua Zhang, Yueheng Key Laboratory of Artificial Structures and Quantum Control School of Physics and Astronomy Shanghai Jiao Tong University Shanghai200240 China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China

High-speed ultra-broadband detectors play a crucial role in aerospace technology, and national security etc. The interfacial work function internal photoemission (IWIP) detector employs multiple absorption mechanism comprehensively across different wavelength band to achieve complete photon type detection, which makes it possible to realize high-speed and ultra-broadband simultaneously. We propose a ratchet heterojunction IWIP (HEIWIP) detector, which shows 3-165THz ultra-broadband coverage. The high-speed response is investigated in detail by both microwave rectification technology and high-speed modulated terahertz light. Up to 5.1GHz 3dB bandwidth is acquired in terms of microwave rectification measurement. And 4.255GHz inter-mode optical beat note signal was successfully detected. Copyright © 2024, The Authors. All rights reserved.

关键词： Photodetectors

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Study of Low-Doped In0.53ga0.47as/Inp Pin Photodetectors with the Diffusion Barrier Layer Structure

SSRN

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SSRN 2023年

作者： Cao, Jiasheng Li, Tao Yu, Yizhen Yu, Chunlei Gu, Yi Yang, Bo Ma, Yingjie Shao, Xiumei Li, Xue Gong, Haimei State Key Laboratories of Transducer Technology Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Infrared Imaging Materials and Detectors Chinese Academy of Sciences Shanghai200083 China Graduate School of the Chinese Academy of Sciences Beijing100039 China

In this paper, a diffusion barrier layer structure was proposed to adjust the diffusion velocity and precisely control the diffusion depth for low-doped InGaAs planar photodetectors. By employing scanning capacitance microscopy and scanning electron microscopy techniques, the Zn diffusion profiles were investigated, demonstrating that the addition of a moderately doped interlayer effectively manipulate the diffusion frontier with the reduced diffusion depth. In0.53Ga0.47As/InP PIN photodetectors with different structures were fabricated and characterized. Compared with the typical structure, the device with the diffusion barrier layer structure exhibited significantly lower dark current. In addition, the blackbody testing indicated the PD with diffusion barrier layer structure had a peak wavelength detectivity nearly three times higher than that of the typical structure. Therefore, for the purpose of fabricating high-performance planar InGaAs detectors with low-doped absorption layer, introducing the diffusion barrier layer is advisable. © 2023, The Authors. All rights reserved.

关键词： Photons

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