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3rd International Conference on Optoelectronic Science and Materials, ICOSM 2021

作者： Jia, Jia Shi, Fan State Key Laboratory of Transducer Technology Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Colleges of Sciences Shanghai University Shanghai200444 China

ISBN: (数字)9781510649323

ISBN: (纸本)9781510649316

HgCdTe is the most widely used material for infrared detectors' fabricating, basically because of its superior photonelectronic characters. As the fabrication process is comparatively simple and the cost could be very low, HgCdTe photoconductive (PC) detectors still receive widespread applications in many detection fields. For HgCdTe PC detectors, ion beam etching (IBE) is the most commonly used technology for detectors' micro mesa isolation. Ion beams used for etching have certain amounts of energy that would induce some etching damages being processed and also raise the temperature of HgCdTe material. These effects would impact the photon-electronic characters of HgCdTe PC detectors finally obtained. In order to improve the performance of HgCdTe PC devices, we may fabricate them at an extreme-low temperature (ELT). In this paper, we studied some characteristics of argon-ion (Ar+) beam etching at ELT. Furthermore, we not only successfully prepared long-wavelength (LW) HgCdTe PC devices by etching at near liquid nitrogen temperature (LNT), but also compared the testing performances with those obtained by etching at near room temperature (RT). © 2021 SPIE.

关键词： Temperature

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An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging

arXiv

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arXiv 2025年

作者： Yu, Quan Wang, Fangbao Yuan, Xin Liu, Ying Gan, Lianghua Xu, Gangyi Shen, Wenzhong Chen, Liang Zhang, Yueheng Key Laboratory of Artificial Structures and Quantum Control School of Physics and Astronomy Shanghai Jiao Tong University Shanghai200240 China Radiation Detection Research Center Northwest Institute of Nuclear Technology Xi’an710024 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China

GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based LED with SI-GaAs substrate for X-ray detection and imaging. The mechanism relies on the semiconductor frequency down-conversion process, where the SI-GaAs substrate acts as a photodetector (PD). Upon X-ray irradiation, the generated photocurrent by the SI-GaAs substrate drives the LED to emit NIR photons which can be detect by a low-cost CCD. We demonstrate direct X-ray detection and present preliminary imaging results, providing another example of the applicability of the PD-LED design for optical frequency conversion. The proposed LED X-ray detector leverages mature materials and fabrication processes. The application of the frequency down-conversion concept makes it possible for pixel-less imaging using a large single imaging unit, eliminating the need for readout circuits. This PD-LED architecture offers an alternative approach to direct X-ray detection and imaging, characterized by higher absorption, improved image resolution, and enhanced material stability. Copyright © 2025, The Authors. All rights reserved.

关键词： III-V semiconductors

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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System Reliability and Safety Engineering (SRSE), International Conference on

作者： Canxiong Lai Wen Sun Shaohua Yang Bin Zhou Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking.

关键词： Vacuum systems Atmosphere Moisture Detectors Reliability engineering Indium gallium arsenide Temperature control

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Response prediction for mechanical systems subject to combinationalstructural modifications

Response prediction for mechanical systems subject to combin...

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第八届国际振动工程会议

作者： Zengwei Wang Lei Ding Zhike Peng Xi Shi Key Laboratory of Infrared System Detection and Imaging Technology Chinese Academy of Sciences Shanghai Institute of Technical Physics Chinese Academy of Sciences State Key Laboratory of Mechanical System and Vibration Shanghai Jiao Tong University

A method is proposed for predicting the dynamic response of mechanical systems subject to combinational structural modifications. It can be found that dynamic responses of mechanical systems subject to combinational structural modifications can be calculated from the variant transmissibility matrices of the one-modification system and the dynamic response of the base system, even though operational forces are unknown. The variant transmissibility is defined to relate the response of the modified system and that of the base system. The dynamic coupling between structural modifications to the system is also investigated. The achievements can be used to reduce the computational cost of determining the optimal combination of design *** benefits of the proposed method are illustrated and validated using the numerical example,finite element simulations and experimental case studies.

关键词： Response prediction for mechanical systems subject to combinationalstructural modifications

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High Resolution Time-to-digital Conversion Circuit for HgCdTe APD Detector at 77K

Research Square

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Research Square 2021年

作者： Qiwen, Zhang Honglei, Chen Ruijun, Ding Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technology Physics Chinese Academy of Sciences Shanghai200083 China University of Chinese Academy of Sciences Beijing100049 China

HgCdTe avalanche photodiode (APD) is a frontier research on infrared focal plane technology, High-precision time stamp readout circuit is the basis of the APD focal plane at 77 K, which directly affects APD infrared focal plane performance. Time-to-digital conversion circuit (TDC) is one of the methods to achieve high-precision time stamping. Based on the analysis of MOSFET at low temperature, our design a vernier TDC circuit, which uses a synchronous counter to quantize an integer multiple of the period to achieve a coarse count of 6 bits;The on-chip PLL multiplied high-frequency clock has high-precision and high PVT characteristics, using it to quantify the part that is less than one clock cycle to achieve a fine-count of 6 bits output. The circuit adopts standard CMOS process tape out, our circuit works at a master-frequency of 120 MHz. At 77 K, the circuit test can distinguish the time resolution of 236.280 ps. The DNL is within -0.54~0.71 LSB, and INL is within -1.32~1.21 LSB. © 2021, CC BY.

关键词： Timing circuits

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Performance-based Reliability Prediction of Power Supply Considering Degradation Uncertainties

Performance-based Reliability Prediction of Power Supply Con...

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System Reliability and Safety Engineering (SRSE), International Conference on

作者： Hao Niu Shaohua Yang Wenyuan Liao Canxiong Lai Wen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

Reliability prediction is an effective approach to find weak links and evaluate whether the product satisfies its reliability requirement during the design phase. For the highly reliable product, it is far difficult to predict its reliability level according to the traditional method that largely relies on historical data from reliability handbooks. This paper proposes a performance-based reliability prediction method, which makes use of degradation to reflect product's health conditions. Additionally, a degradation model considering multivariate uncertainties such as operation conditions and parameter randomness is proposed to describe soft failures induced by degradation. A case study of power supply is illustrated to show the effectiveness and feasibility of the proposed method and degradation model for reliability prediction.

关键词： Degradation Uncertainty Power supplies Sensitivity analysis Predictive models Maintenance engineering Reliability engineering

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Realization of ultra-broadband IR up-conversion imaging

arXiv

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arXiv 2022年

作者： Li, Xiaohong Bai, Peng Huang, Siheng Bai, Xueqi Song, Wenjun Lian, Xinran Hu, Cheng Shi, Zhiwen Shen, Wenzhong Zhang, Yueheng Fu, Zhanglong Shao, Dixiang Tan, Zhiyong Cao, Juncheng Tan, Cheng Xu, Gangyi Key Laboratory of Artificial Structures and Quantum Control School of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 China Institute of Applied Physics and Computational Mathematics Beijing100088 China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China

Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultrabroad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 μm. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixelless imaging of the MIR spot from CO2 laser is further demonstrated. In addition，the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixelless imaging and multi-functional analysis systems. Copyright © 2022, The Authors. All rights reserved.

关键词： Light emitting diodes

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An improvement method of a lossless compression scheme for the datacube from Geostationary Interferometric infrared Sounder (GIIRS) and its FPGA implementation 9

An improvement method of a lossless compression scheme for t...

引用

9th IEEE Joint International Information technology and Artificial Intelligence Conference, ITAIC 2020

作者： Yang, Minzhu Hernandez, Raul Guerra Han, Changpei Feliciano, Jose Francisco Lopez China Jiliang University Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province College of Information Engineering Hangzhou China Instituto Universitario de Microelectrónica Aplicada Universidad de Las Palmas de Gran Ganaria Las Palmas Spain Chinese Academy of Science Key Laboratory of Infrared System Detection and Imaging Technology Shanghai China

This paper briefly described an improved method for the original proposed scheme based on Vector Quantization and Linear Prediction to further enhance the compression ratio while reduce the time cost. Given the fact that the interferograms belong to the same datacube are similar to each other, there are two obvious modifications in this paper: predict only once to get the general predicted coefficients for the same datacube;along with treat datacube rather than sequence as the encoded unit. The time consumption spent by Linear Prediction part will shrink about 35.55% by predicting just once. Moreover, the change of the encoded object makes the final compression ratio get a further rise range from 2.62% to 3.711%. © 2020 IEEE.

关键词： Field programmable gate arrays (FPGA)

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Lateral Photovoltaic Effect in Silk-Protein-Based Nanocomposite Structure for Physically Transient Position-Sensitive Detectors

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Physical Review Applied 2021年第5期15卷 054011-054011页

作者： Yuhong Cao Zhuyikang Zhao Peng Bao Zhikai Gan Hui Wang State Key Laboratory of Advanced Optical Communication Systems and Networks School of Physics and Astronomy Shanghai Jiao Tong University 800 Dongchuan Road Shanghai 200240 China Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education Research Institute of Micro/Nano Science and Technology Shanghai Jiao Tong University 800 Dongchuan Road Shanghai 200240 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China

Silk protein is considered as an attractive transient biomaterial with fantastic properties applied to biophotoelectric devices. Combined with noble-metal silver nanoparticles, a transient composite structure of Ag nanoparticle-embedded silk protein (Ag/silk protein/Si) is constructed. We obtain a lateral photovoltaic effect with a maximum sensitivity of 308.3 mV/mm, which is a very large sensitivity value in the field of organic materials, even comparable to the reported sensitivities of most inorganic materials. We attribute this to the increase of photogenerated carriers at the illuminated spot caused by the local surface-plasmon resonance of silver particles and the effective regulation of the diffusion (or resistivity of the structure) of photogenerated carriers by a silk wrapper. Interestingly, both silk protein and silver have good biocompatibility, and the combination of the two might be an alternative for the future development of biomaterial-related transient photovoltaic devices.

关键词： Optoelectronics Photovoltaic absorbers Photovoltaic effect Surface plasmons Composite materials Nanoparticles Proteins Surface-enhanced Raman spectroscopy

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Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth” [Apr 20 doi: 10.1109/JQE.2020.2970745]

引用

IEEE Journal of Quantum Electronics 2023年第6期59卷

作者： Yage Liu Yingjie Ma Xue Li Yi Gu Yonggang Zhang Haimei Gong Jiaxiong Fang State Key Laboratories of Transducer Technology and Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China University of Chinese Academy of Sciences Beijing China

In the above article [1] , the affiliations were written as: The authors are with the State key Laboratories of Transducer technology, key laboratory of infrared imaging Materials and Detectors, Shanghai Institute of... 详细信息

关键词： Dark current Etching Temperature distribution Temperature measurement Photodetectors Gallium arsenide Indium gallium arsenide Leakage currents

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