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2024 IEEE International Electron Devices Meeting, IEDM 2024

作者： Yu, Zuoxu Sang, Yimeng Zhang, Yuzhen Zhang, Yiyang Shi, Runxiao Liu, Siyang Tao, Tao Li, Xifeng Peng, Cong Zhang, Rong Wu, Wangran Zhuang, Zhe Liu, Bin Sun, Weifeng School of Integrated Circuits National ASIC System Engineering Research Center Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (纸本)9798350365429

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm2V-1s-1, via mass-production compatible processes utilizing SiO2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs (μ-LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded μ-LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix μ-LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future. © 2024 IEEE.

关键词： Thin film transistors

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Improved subarray coherence factor beamformer for ultrasound plane-wave imaging

Improved subarray coherence factor beamformer for ultrasound...

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2023 International Congress on Ultrasonics, ICU Beijing 2023

作者： Guan, Huchang Jiang, Chen Xu, Kailiang Ta, Dean Department of Biomedical Engineering School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai201203 China Micro-nano System Center School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of Medical Neurobiology and MOE Frontiers Center for Brain Science Fudan University China

Coherent plane-wave compounding (CPWC) has gained significant traction in medical ultrasound imaging. The coherence factor (CF) weighting algorithm, a classical adaptive beamforming strategy, aims to enhance the CPWC imaging lateral resolution, but it also noticeably compromises the speckle patterns, *** a low signal-to-noise ratio (SNR). Delay multiply and sum (DMAS) has been proposed to reduce side lobes. However, the reconstructed image quality with DMAS is limited in terms of resolution and speckle level. In the present study, an improved subarray coherence factor (ISCF) algorithm is introduced by combining CF with DMAS strategies, aiming to improve the contrast and resolution while preserving the speckle level. The performance of the proposed algorithm is evaluated using simulation and phantom datasets. Results indicate that the resolution and the contrast of ISCF can be improved by 41.6% and 79.4%, respectively;compared with delay and sum (DAS) algorithm. Additionally, the resolution and the speckle level of ISCF can be improved by 10.6% and 35.7% compared with CF algorithm, respectively. The proposed ISCF algorithm outperforms CF in terms of resolution, contrast, and speckle preservation. © 2024 Institute of Physics Publishing. All rights reserved.

关键词： Ultrasonic imaging

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Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC hightemperature pressure sensors

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microsystems & Nanoengineering 2024年第5期10卷 231-242页

作者： Ziyan Fang Xiaoyu Wu Hu Zhao Xudong Fang Chen Wu Dong Zhang Zhongkai Zhang Bian Tian Libo Zhao Tiefu Li Prateek Verma Ryutaro Maeda Zhuangde Jiang State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement TechnologiesXi'an Jiaotong UniversityXi'an 710049China School of Mechanical Engineering Xi'an Jiaotong UniversityXi'an 710049China Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing at Yantai Yantai 264000China Xi'an Jiaotong University(Yantai)Research Institute for Intelligent Sensing Technology and System Xi'anChina School of Instrument Science and Technology Xi'an Jiaotong UniversityXi'an 710049China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Department of Chemical Engineering University of ArkansasFayettevilleAR72701USA

Due to the excellent mechanical,chemical,and electrical properties of third-generation semiconductor silicon carbide(SiC),pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300℃.However,the significant output drift at elevated temperatures challenges the precision and stability of ***-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure *** this study,we fabricate platinum(Pt)thin-film resistance temperature detectors(RTDs)on a SiC substrate by incorporating aluminum oxide(Al_(2)O_(3))as the transition layer and utilizing aluminum nitride(AIN)grooves for alignment through microfabrication *** composite layers strongly adhere to the substrate at temperatures reaching 950℃,and the interface of the Al2O3/Pt bilayer remains stable at elevated temperatures of approximately 950 *** stability contributes to the excellent high-temperature electrical performance of the Pt RTD,enabling it to endure temperatures exceeding 850℃ with good *** characteristics establish a basis for the future integration of Pt RTD in SiC pressure ***,tests and analyses are conducted on the interfacial diffusion,surface morphological,microstructural,and electrical properties of the Pt flms at various annealing *** can be inferred that the tensile stress and self-diffusion of Pt films lead to the formation of hillocks,ultimately reducing the electrical performance of the Pt thin-flm *** increase the upper temperature threshold,steps should be taken to prevent the agglomeration of Pt films.

关键词： resistance carbide film

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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Grating pitch comparison measurement based on Cr atomic transition frequency and Si lattice constant

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Chinese Physics B 2025年第2期34卷 82-88页

作者： Jingtong Feng Rao Xu Ziruo Wu Lihua Lei Yingfan Xiong Zhaohui Tang Guangxu Xiao Yuying Xie Dongbai Xue Xiao Deng Xinbin Cheng Tongbao Li National Metrology and Testing Center for Integrated Circuit Measurement and Inspection Equipment Industry(Shanghai) Tongji UniversityShanghai 200092China Institute of Precision Optical Engineering Tongji UniversityShanghai 200092China MOE Key Laboratory of Advanced Micro-Structured Materials Tongji UniversityShanghai 200092China Shanghai Frontiers Science Center of Digital Optics Tongji UniversityShanghai 200092China Shanghai Professional Technical Service Platform for Full-Spectrum and High-Performance Optical Thin Film Devices and Applications Tongji UniversityShanghai 200092China School of Physics Science and Engineering Tongji UniversityShanghai 200092China Shanghai Metric Optics Technology Co. Ltd.Shanghai 201108China Shanghai Institute of Measurement and Testing Technology Shanghai 201203China

Traceability is the fundamental premise of all metrological activities. The establishment of a traceability chain characterized by a shortened structure, while simultaneously enabling on-site traceability, represents a key trend in the advancement of metrology. This study explores the periodic accuracy and overall uniformity of self-traceable gratings, employing multilayer film gratings with a nominal period of 25.00 nm as the medium. We present a comparative analysis of measurement capabilities in a self-traceable grating calibration system characterized by a ‘top-down’ calibration approach and a Si lattice constant calibration system characterized by a ‘bottom-up’ calibration approach. The results indicate that the values obtained for the multilayer film grating periods, calibrated using the self-traceable grating system, are 24.40 nm with a standard deviation of 0.11 nm. By comparing with the values derived from the Si lattice constant, which yield 24.34 nm with a standard deviation of 0.14 nm, the validity and feasibility of the self-traceable calibration system are confirmed. This system extends and complements existing metrological frameworks, offering a precise pathway for traceability in precision engineering and nanotechnology research.

关键词： nanometrology self-traceable standard material Si lattice constant

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Nonvolatile electrically reconfigurable silicon photonics enabled by back-end-of-line integration of phase change materials 12

Nonvolatile electrically reconfigurable silicon photonics en...

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Optoelectronic Devices and Integration XII 2023

作者： Li, Junying Wei, Maoliang Xu, Kai Tang, Bo Yun, Yiting Zhang, Peng Wu, Yingchun Bao, Kangjian Lei, Kunhao Chen, Zequn Ma, Hui Sun, Chunlei Liu, Ruonan Li, Ming Li, Lan Lin, Hongtao State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Zhejiang Hangzhou310030 China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

ISBN: (纸本)9781510667778

Nonvolatile light-field manipulation via electrically-driven phase transition of chalcogenide phase change materials (PCMs) is regarded as one of the most powerful solutions to low-power-consumption and compact integrated reconfigurable photonics. However, before the breakthrough in large-scale integration approaches linked to wafer foundries, phase-change non-volatile reconfigurable photonics could hardly see their widespread practical applications. Here we demonstrate nonvolatile photonic devices fabricated by back-end-of-line (BOEL) integration of PCMs into the commercial silicon photonics platform. A narrow trench etched into the BOEL dielectric layer exposed the waveguide core and allowed for the direct deposition of various PCM films on the waveguide in the functional areas. Fine-tuning the nonvolatile phase transition of Sb2Se3 via a PIN microheater was verified by realizing the post-fabrication trimming of silicon photonic devices. Our work highlights a reliable platform for large-scale PCM-integrated photonics and validates its precise nonvolatile reconfigurability. © 2023 SPIE.

关键词： Phase change materials

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Enhanced Pyroelectric Response in Quenched BNT-Based Lead-Free Ferroelectrics for Uncooled Infrared Detection

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Advanced Functional Materials 2025年

作者： Shen, Meng Zhang, Xian Cen, Fangjie Zhang, Qingfeng Zhang, Haibo Zhang, Guangzu Jiang, Shenglin Chen, Yong Hu, Yongming Yao, Kui Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Key Laboratory of Intelligent Sensing System and Security of Ministry of Education and School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan430074 China Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei Key Laboratory of Polymer Materials School of Materials Science & Engineering Hubei University Wuhan430062 China School of Materials Science and Engineering State Key Laboratory of Material Processing and Die & Mould Technology Huazhong University of Science and Technology Wuhan430074 China Singapore138634 Singapore

Excellent pyroelectric performance in environmentally friendly lead-free ferroelectrics is highly demanded for uncooled infrared detector. However, the trade-off between room temperature pyroelectric coefficient (proom) and depolarization temperature (Td) remains a major challenge of lead-free ferroelectrics for their device applications. Herein, a superior proom of 13.8 × 10−4 C m−2 K−1 with high Td of 155 °C is achieved in quenched BNT-Fe/Mn-NBT sample. Oxygen vacancy engineering is proposed to solve the constraint between proom and Td in BNT-based ceramics. The local A/B site displacement and oxygen vacancies are constructed in the BNT-Fe/Mn-NBT perovskite structure by quenching treatment, resulting in larger lattice distortion and superior proom. Meanwhile, defect-induced inhomogeneous random field compensates the ferroelectric depolarization field and down-shifts the free energy well, maintaining high Td. The resulting pyroelectric infrared detector made from the high-performance quenched BNT-Fe/Mn-NBT generates the voltage responsivity of 5906 V W−1 and specific detection rate of 1.8 × 108 cm Hz1/2 W−1, which is comparable to the commercial RD-624 type PZT-based pyroelectric infrared detector. © 2025 Wiley-VCH GmbH.

关键词： Perovskite

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Flexible Active-Matrix micro-LED Display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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One-Step Laser-Induced Dissolvable PVA Mask for 3D Soft Carbon Electrode Array 38

One-Step Laser-Induced Dissolvable PVA Mask for 3D Soft Carb...

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38th IEEE International Conference on micro Electro Mechanical systems, MEMS 2025

作者： Wang, Xuanqi Xue, Kai Bai, Ruiyu Huang, Ye Zhang, Zimo You, Xiaoli Wang, Minghao Chang, Honglong Ji, Bowen Northwestern Polytechnical University Unmanned System Research Institute China Northwestern Polytechnical University National Key Laboratory of Unmanned Aerial Vehicle Technology Integrated Research and Development Platform of Unmanned Aerial Vehicle Technology China Northwestern Polytechnical University Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace School of Mechanical Engineering China Northwestern Polytechnical University Sanhang Institute for Brain Science and Technology China Northwestern Polytechnical University Institute of Medical Research China Hangzhou Dianzi University Moe Engineering Research Center of Smart Microsensors and Microsystems College of Electronics and Information China

ISBN: (纸本)9798331508890

This paper introduces a 3D soft carbon electrode array, fabricated through a one-step laser-induced process integrating a water-dissolvable polyvinyl alcohol (PVA) mask. This approach achieves precise conical microstructures and robust conductive channels using hybrid MWCNT@PDMS conductive paste. The soft carbon electrode sites with a 3D conical microstructure are designed to enhance proximity to neural tissue, thereby enhancing electrocorticogram (ECoG) signal quality and enabling effective neural stimulation. The electrode array demonstrates remarkable stretchability (25% over 1,000 cycles without failure) and stability (equivalent to 66 days in vivo). Compared to conventional materials, our electrodes exhibit superior electrochemical properties, including lower impedance (9.7 kΩ at 1 kHz) and higher signal-to-noise ratio (SNR, 61.7 dB). Thus, this one-step process is a cost-effective, scalable solution for recording and modulating central or peripheral neural tissues. © 2025 IEEE.

关键词： Carbon electrodes

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