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IEEE International Conference on micro Electro Mechanical systems

作者： Xuanqi Wang Kai Xue Ruiyu Bai Ye Huang Zimo Zhang Xiaoli You Minghao Wang Honglong Chang Bowen Ji Unmanned System Research Institute Northwestern Polytechnical University China National Key Laboratory of Unmanned Aerial Vehicle Technology Integrated Research and Development Platform of Unmanned Aerial Vehicle Technology Northwestern Polytechnical University China Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace School of Mechanical Engineering Northwestern Polytechnical University China Sanhang Institute for Brain Science and Technology Northwestern Polytechnical University China Institute of Medical Research Northwestern Polytechnical University China MOE Engineering Research Center of Smart Microsensors and Microsystems College of Electronics and Information Hangzhou Dianzi University China

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper introduces a 3D soft carbon electrode array, fabricated through a one-step laser-induced process integrating a water-dissolvable polyvinyl alcohol (PVA) mask. This approach achieves precise conical microstructures and robust conductive channels using hybrid MWCNT@PDMS conductive paste. The soft carbon electrode sites with a 3D conical microstructure are designed to enhance proximity to neural tissue, thereby enhancing electrocorticogram (ECoG) signal quality and enabling effective neural stimulation. The electrode array demonstrates remarkable stretchability (25% over 1,000 cycles without failure) and stability (equivalent to 66 days in vivo). Compared to conventional materials, our electrodes exhibit superior electrochemical properties, including lower impedance (9.7 kΩ at 1 kHz) and higher signal-to-noise ratio (SNR, 61.7 dB). Thus, this one-step process is a cost-effective, scalable solution for recording and modulating central or peripheral neural tissues.

关键词： Electrodes micromechanical devices Three-dimensional displays Array signal processing Laser stability Recording microstructure Carbon Laser beam cutting Signal to noise ratio

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Excellent Energy Storage Properties in Zro2 Toughened Bst-Based Relaxor Ferroelectric Ceramics Via Multi-Scale Synergic Regulation

SSRN

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SSRN 2023年

作者： Yang, Fan Bao, Yizheng Zeng, Biao Wu, Jiyue Li, Xin Sun, Yiyang Chen, Ying Wang, Genshui Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China The State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China National Key Laboratory of Materials for Integrated circuits Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China

Lead-free ceramic capacitors offer ultrahigh power density and ultrafast discharging rates, making them critical energy storage components for advanced pulsed power systems. However, the greatest obstacle to broader applications remains the relatively low energy storage density. In this study, a relaxor ferroelectric ceramic based on (0.6-x)Ba0.55Sr0.45TiO3-0.4Bi0.5Na0.5TiO3-xSrZrO3 ((0.6-x)BST-0.4BNT-xSZ) is prepared using the tape casting method, resulting in an excellent energy density (Wrec ≈ 10.0 J cm-3) and high energy storage efficiency (η ≈ 91%). The solid solution of linear dielectrics SrZrO3 synergistically regulates both relaxor properties and breakdown strength. The variation of relaxor property was explored utilizing New Glass model and the multi-polarization model, with confirmation provided by piezoresponse force microscopy. Furthermore, the breakdown strength could be attributed to improvements in electric insulation and the widening of the bandgap. As SZ content increases, the in-situ emergence of the second phase ZrO2, accompanied by a martensitic transformation, not only improves the fracture toughness of ceramics but also serves to elongate the breakdown path. Encouragingly, 0.4BST-0.4BNT-0.2SZ also achieves excellent temperature stability (-95-125 ℃), frequency stability (1-1000 Hz), cycling reliability (1-106 cycles), and great charging-discharging properties. This multiscale synergic regulation strategy plays a guiding role in the screening of high-performance energy storage dielectric materials. © 2023, The Authors. All rights reserved.

关键词： Ductile fracture

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Recent Advances in Triboelectric Nanogenerators: From Technological Progress to Commercial applications

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ACS Nano 2023年第12期17卷 11087-11219页

作者： Choi, Dongwhi Lee, Younghoon Lin, Zong-Hong Cho, Sumin Kim, Miso Ao, Chi Kit Soh, Siowling Sohn, Changwan Jeong, Chang Kyu Lee, Jeongwan Lee, Minbaek Lee, Seungah Ryu, Jungho Parashar, Parag Cho, Yujang Ahn, Jaewan Kim, Il-Doo Jiang, Feng Lee, Pooi See Khandelwal, Gaurav Kim, Sang-Jae Kim, Hyun Soo Song, Hyun-Cheol Kim, Minje Nah, Junghyo Kim, Wook Menge, Habtamu Gebeyehu Park, Yong Tae Xu, Wei Hao, Jianhua Park, Hyosik Lee, Ju-Hyuck Lee, Dong-Min Kim, Sang-Woo Park, Ji Young Zhang, Haixia Zi, Yunlong Guo, Ru Cheng, Jia Yang, Ze Xie, Yannan Lee, Sangmin Chung, Jihoon Oh, Il-Kwon Kim, Ji-Seok Cheng, Tinghai Gao, Qi Cheng, Gang Gu, Guangqin Shim, Minseob Jung, Jeehoon Yun, Changwoo Zhang, Chi Liu, Guoxu Chen, Yufeng Kim, Suhan Chen, Xiangyu Hu, Jun Pu, Xiong Guo, Zi Hao Wang, Xudong Chen, Jun Xiao, Xiao Xie, Xing Jarin, Mourin Zhang, Hulin Lai, Ying-Chih He, Tianyiyi Kim, Hakjeong Park, Inkyu Ahn, Junseong Huynh, Nghia Dinh Yang, Ya Wang, Zhong Lin Baik, Jeong Min Choi, Dukhyun Kyung Hee University Gyeonggi Yongin17104 Korea Republic of Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Department of Mechanical Engineering Soft Robotics Research Center Seoul National University Seoul08826 Korea Republic of Department of Mechanical Engineering Gachon University Seongnam13120 Korea Republic of Department of Biomedical Engineering National Taiwan University Taipei10617 Taiwan Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing Hua University Hsinchu30013 Taiwan School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon16419 Korea Republic of Sungkyunkwan University 2066 Seobu-ro Gyeonggi Suwon16419 Korea Republic of Department of Chemical and Biomolecular Engineering National University of Singapore 4 Engineering Drive 4 117585 Singapore Division of Advanced Materials Engineering Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Department of Physics Inha University 100 Inha-ro Incheon22212 Korea Republic of School of Materials Science & Engineering Yeungnam University Gyeongbuk Gyeongsan38541 Korea Republic of 291 Daehak-ro Daejeon34141 Korea Republic of School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore Institute of Flexible Electronics Technology of Tsinghua Zhejiang Jiaxing314000 China Nanomaterials and System Lab Major of Mechatronics Engineering Faculty of Applied Energy System Jeju National University Jeju632-43 Korea Republic of School of Engineering University of Glasgow GlasgowG128QQ United Kingdom Seoul02792 Korea Republic of Department of Physics Inha University Incheon22212 Korea Republic of Suwon16419 Korea Republic of Department of

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade. © 2023 The Authors. Published by American Chemical Society

关键词： Nanogenerators

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Robust laser self-mixing displacement demodulation viacontinuous wavelet–Hilbert transform for high-precision accelerometercalibration

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Applied Optics 2025年第16期64卷 4559-4567页

作者： Zhikun Chang Song Song Dongbai Xue Chunling He Zhoumiao Shi Jing Yu Ming Kong Yuying Xie Xiao Deng Tongbao Li Xinbin Cheng Institute of Precision Optical Engineering Tongji University Shanghai 200092 China National Metrology and Testing Center for Integrated Circuit Measurement and Inspection Equipment Industry (Shanghai) Tongji University Shanghai 200092 China MOE Key Laboratory of Advanced Micro-Structured Materials Tongji University Shanghai 200092 China Shanghai Frontiers Science Center of Digital Optics Tongji University Shanghai 200092 China Shanghai Professional Technical Service Platform for Full-Spectrum and High-Performance Optical Thin Film Devices and Applications Tongji University Shanghai 200092 China School of Physics Science and Engineering Tongji University Shanghai 200092 China School of Computer Science and Technology Zhejiang University of Water Resources and Electric Power Hangzhou 310018 China Shenzhen Institute of Technology Innovation NIM Shenzhen 518107 China College of Metrology and Testing Engineering China Jiliang University Hangzhou 310018 China

The laser self-mixing grating interferometer based on Cr atomlithography gratings hasbeen applied to the primarycalibration of accelerometers due to its compact structure, low cost,high accuracy, and directon-site traceability. However, the high line density of Cr gratings(4700 l/mm) introduces dense outliers in interferometricsignals, complicating displacement demodulation via conventionalderivative-based methods and causing frequent phase jumps. To addressthis challenge, we propose a hybrid algorithm integrating thecontinuous wavelet transform and the Hilbert transform, which enablesrobust displacement demodulation under high-noise *** validation on a commercial MEMS accelerometerdemonstrated exceptional accuracy: 100 consecutive data segments weresuccessfully demodulated with a displacement fitting goodness of $R^2 = 0.9964$ ( $\sigma_{R_2} =0.0027$ ), and the derived sensitivitydeviated by only 0.1% from the nominal value. This algorithmestablishes a paradigm for the high-accuracy dynamic calibration ofinertial sensors in field applications.

关键词： Laser interferometry Lithography Phase shift Refractive index systems design Wavelet transforms

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Volatile to Non-Volatile Switching Transition in Chalcogenides

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Advanced Functional Materials 2025年

作者： Zhao, Zihao Zhang, Mengfei Yang, Qun Gotoh, Tamihiro Ge, Qingqin Shi, Nannan Sun, Yuting Zhao, Jiayi Sui, Yanping Jiang, Ran Yu, Haibin Elliott, Stephen R. Song, Zhitang Zhu, Min National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Sciences Beijing100029 China Wuhan National High Magnetic Field Center and School of Physics Huazhong University of Science and Technology Wuhan430074 China Department of Physics Graduate School of Science and Technology Gunma University Maebashi3718510 Japan Thermo Fisher Scientific China Shanghai200050 China Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Trinity College University of Cambridge CambridgeCB2 1TQ United Kingdom Physical and Theoretical Chemistry Laboratory University of Oxford OxfordOX1 3QZ United Kingdom School of Integrated Circuits Shanghai Jiao Tong University Shanghai200240 China

Over the past 60 years, three distinct electrical switching behaviors have been discovered in chalcogenides: ovonic threshold switch (OTS), ovonic memory switch (OMS), and phase-change switch (PCS). The first two have been successfully utilized in commercialized 3D Xpoint chips, serving as selector and memory cells, respectively. However, the relationships among these three behaviors remain unclear. Here, it is demonstrated that the Ge-Te binary system exhibits these three switching mechanisms. Specifically, the switching behavior transforms from PCS-like to OTS-like within the composition range from GeTe8 to GeTe6, while the shift from volatile (OTS) to non-volatile switching behavior (OMS) occurs between the compositions GeTe2 and GeTe. The PCS-to-OTS transition is primarily driven by enhancements in glass-forming ability, with the Turnbull parameter increasing from 0.58 to 0.6, and the crystallization temperature exceeding 145 °C, while the shift from OTS to OMS behavior is largely due to the significantly accelerated crystallization speed, from microseconds to nanoseconds. Most importantly, the GeTe16 PCS stands out, with a large ON current (0.6 mA), low leakage current (−8 A), high endurance (>6 × 109 cycles), and high-temperature back-end-of-line compatibility. The crystalline nature of this PCS material addresses the composition and toxicity issues in conventional OTS materials. Moreover, GeTe16 PCSs have been successfully integrated with GeTe OMSs, forming selector/memory arrays with a read margin of 0.4 V. These findings not only reveal the mechanisms underlying the volatile to non-volatile transition but also provide an alternative solution for high-density 3D memory, potentially replacing the OTS/OMS stack approach. © 2025 Wiley-VCH GmbH.

关键词： Phase change memory

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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

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Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

引用

arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

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Compare of three micropattern methods for high-throughput cell arrangement 21

Compare of three micropattern methods for high-throughput ce...

引用

21st International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2017

作者： Hun, Tingting Liu, Yaoping Guo, Yechang Liu, Xiaoyi Wang, Wei Sun, Yan Fan, Yubo School of Biological Science and Medical Engineering Beihang University Key Laboratory for Biomechanics and Mechanobiology of Ministry of Education Beijing100191 China Institute of Microelectronics Peking University Beijing100871 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing100871 China Innovation Center for Micro-Nano-electronics and Integrated System Beijing100871 China State Key Laboratory of Transducer Technology Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)9780692941836

Investigations on single-cell level are significant in cellular researches, and the captured of single cell have been reported by many researchers. However, there is still a lack of effective methods to realize high-throughput cell capture and arrangement simultaneously. In this paper, we compared three micropattern methods for high-throughput cell capture and arrangement, and we found a micropore-arrayed membrane based micropattern method could reach efficiency higher than 90%. © 17CBMS-0001.

关键词： Cytology

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Flexible Surface Acoustic Wave (Saw) Magnetic Sensor Based on Terfenol-D Grating-Arrayed Thin Film

SSRN

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SSRN 2024年

作者： Qadir, Akeel Muhammad, Fayyaz Shafique, Shareen Haider, Zeeshan Zhimin, Yang Chuanjiao, Hou Xu, Xiaoqing Han, Gao Shi, Tianjin Karim, Shahid Xu, Hongsheng Farooq, Umar SchoolofInformation Engineering Xi’an Eurasia University 710065 China Key Laboratory of Micro and Nano Electro-Mechanical Systems Department of Microsystems Engineering NorthwesternPolytechnicalUniversity Xi'An710072 China Islamabad Pakistan Department of Microelectronic Science and Engineering Laboratory of Clean Energy Storage and Conversion School of Physical Science and Technology Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean andAtmosphere Ningbo University Ningbo315211 China Institute ofbiomedicalandhealthengineering Shenzhen Institute ofAdvancedTechnology China Hangzhou Hikvision DigitalTechnology Co. Ltd Hangzhou310052 China Faculty ofScience andTechnology ILMA University Karachi Pakistan Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits Anhui University HefeiAnhui230601 China

In recent years, research on the development of SAW based magnetic sensors has gained substantial interest since magnetic sensors are vital measuring components in numerous industrial, engineering and scientific applications. Literature survey revealed that SAW magnetic sensors are generally developed using rigid substrates which make them unsuitable to be mounted on uneven or bent surfaces. In this paper, SAW magnetic sensor design based on Terfenol-D grating-arrayed thin film is presented. The design is implemented on flexible Lithium Niobate (LiNbO3) substrate in order to address the design limitations associated with the conventional SAW magnetic sensors that are implemented on rigid substrates. The experimental results obtained suggest that the proposed SAW magnetic sensor is durable and have tendency to undergo mechanical deformation under stress while keeping the high performance. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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