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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Graphene water transfer printing for 3D surface

Graphene water transfer printing for 3D surface

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IEEE International Conference on micro Electro Mechanical systems

作者： Yangxi Zhang Yiming Gui Fanrui Meng Linyu Li Chencheng Gao Hongwei Zhu Yilong Hao Institute of Microelectronics Peking University Beijing China National Key Laboratory of Nano/Micro Fabrication Technology Beijing China School of Materials Science & Engineering Tsinghua University Beijing China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9781509006090

In this paper, we report a novel water transfer printing method, which can transfer chemical vapor deposition (CVD) graphene from copper foil to 3D surface. By the aid of surface tension and Van der Waals force, multilayer graphene film can be transferred to various substrates with smooth surface including glass sheet, colophony filament, silicon oxide micro structure, polyimide (PI) film, polymethyl methacrylate (PMMA) tube and optical fibers. As the graphene film can be selectively transferred to assigned position in 3D surface, this simple room temperature transfer method has promising application potential in flexible MEMS and device on curved surface.

关键词： Graphene Films Surface treatment Copper Printing Three-dimensional displays Substrates

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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes

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Moore and More 2024年第1期1卷 1-9页

作者： Zhang, Xiaofei Wang, Lin Kong, Lingmei Wang, Sheng Dai, Jun Jia, Guohua Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Department of Physics Jiangsu University of Science and Technology Zhenjiang China School of Molecular and Life Sciences Curtin University Perth Australia Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai China

Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m−2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m−2), which is 7.4-fold longer than that for the control device.

关键词：

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Enhanced performance of ultraviolet organic light-emitting diode by using graphene oxide and MoO3 dual hole injection layer

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Physica Status Solidi (C) Current Topics in Solid State Physics 2017年第1-2期14卷 n/a-n/a页

作者： Liu, Liming You, Fengjiao Zheng, Qinghong Mo, Bingjie Zeng, Baoqing Wang, Honghang Zhang, Xiaowen Wei, Bin School of Physical Electronics University of Electronic Science and Technology of China Chengdu610054 China Guangxi Key Laboratory of Information Materials and School of Materials Science and Engineering Guilin University of Electronic Technology Guilin541004 China Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Zhongshan Institute Zhongshan528402 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

A dual hole injection layer (d-HIL) composed of graphene oxide (GO) and transition metal oxide MoO3 is constructed and proven to be effectively promotes the radiance and external quantum efficiency (EQE) of ultraviolet organic light-emitting diode (UV OLED). The device with d-HIL behaves a maximum radiance of 4.7 mW/cm2 at 237.5 mA/cm2 and EQE of 1.36% at 3.75 mA/cm2, which have been enhanced by 27% and 19%, respectively, in comparison with the coun- terpart using conventional MoO3single HIL. The ultraviolet photoelectron spectroscopy elucidates that GO/MoO3 modification to the greatest extent enhances work function. The current-voltage characteristics and impedance spectroscopy of Hole-only devices clarify that GO/MoO3 d-HIL considerably promotes hole injection capacity. Our results indicate that the d-HIL of GO/MoO3 paves a way for constructing efficient UV OLED. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

关键词： Transition metals

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A 350 C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests

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Journal of micromechanics and microengineering 2020年第5期30卷

作者： Fang, Xudong Wu, Chen Zhao, Yulong Jiang, Zhuangde Rong, Weibing Feng, Zhihong Lv, Yuanjie State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Collaborative Innovation Center of Suzhou Nano Science and Technology Xi'an Jiaotong University Xi'an710049 China School of Mechanical Engineering Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Robotics and System Harbin Institute of Technology Harbin150080 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang050051 China

It has been a challenge to develop pressure sensors that can work in harsh environments. In this work, a piezoresistive n-type 4H-SiC pressure sensor is demonstrated, capable of working at 350 C under hydraulic and pneumatic pressure. The pressure measuring range of this sensor is 7 MPa and the chip dimension is 2.5 mm 2.5 mm 0.23 mm. A reliable Ti/TaSi2/Pt metal ohmic contact is used in the sensor and experimental results show that the metal combination can withstand a wide temperature range of 30 C-350 C. In order to avoid thermal stress induced by the mismatch of thermal expansion coefficients of different packaging materials when increasing temperature, a double-layer bonding scheme of cement glue and epoxy is proposed. The inner layer of the chip and the kovar alloy base are directly bonded with the epoxy, while the outer layer is wrapped with the high-temperature cement glue. Experiments confirm that this method can achieve reliable packaging with temperatures up to 350 C for 5 h. Based on the above key technologies, the sensitivity of this sensor can reach 13.2 mV V-1 kPa-1 and the test data exhibit high linearity and repeatability. Static tests prove that the sensor has good media compatibility which can operate under a hydraulic pressure load at 220 C and a barometric pressure load under 350 C. The sensor in this work can provide a reference for pressure measurements at high temperature and in complex media environments. © 2020 IOP Publishing Ltd.

关键词： Pressure sensors

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Failure Analysis on Diode-triggered Silicon-Controlled Rectifiers By using Nondestructive X-ray microscopy

Failure Analysis on Diode-triggered Silicon-Controlled Recti...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Xinqian Chen Mengge Jin Feihou Fang Liang Zijian Zhang Yanan Wang Dongming Liu Le Chen Chaolun Wang Zhiwei Liu Xing Wu Shanghai Key Laboratory of Multidimensional Information Processing School of Communication and Electronic Engineering East China Normal University Shanghai China School of Electronic Information and Electrical Engineering Chengdu University Chengdu China Center for Advanced Semiconductor & Integrated Micro-System University of Electronic Science and Technology of China

As the complexity of integrated circuits increases, the electrostatic discharge (ESD) protection devices become critical to reliability issues. However, the physical failure analysis of ESD devices is destructive and time-consuming. In this work, by using the X-ray microscopy (XRM), we study the abnormal change in the leakage current of diode-triggered silicon-controlled rectifiers (DTSCRs) ESD structure under transmission line pulsing stressing. XRM is nondestructive physical failure analysis method by showing the in-depth morphology information of the devices. The results show that the proposed ESD devices have two parts, one is the trigger diodes part and the other is the SCR part. The SCR part was severely damaged and the contact and vias are melted under the electrical stressing, while the trigger diodes part remains intact. The failure analysis is nondestructive, multi-view, and time-saving. It is enlightening the design of novel ESD devices.

关键词： integrated circuits Power transmission lines microscopy Contacts Failure analysis Rectifiers Morphology

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Investigation of Optical Polarization Characteristics of Ultraviolet-C Algan Multiple Quantum Wells by Angle-Resolved Cathodoluminescence

SSRN

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SSRN 2024年

作者： Gong, Honglin Zhu, Lihong Cai, Yaqi Yang, Renlong Guo, Weijie Chen, Huanting Chen, Zhong Lu, Yijun National Innovation Platform for the Fusion of Industry and Education in Integrated Circuits Department of Electronic Science School of Electronic Science and Engineering Xiamen University Xiamen361005 China Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province School of Physics and Information Engineering Minnan Normal University Zhangzhou363000 China

AlGaN-based ultraviolet-C (UV-C) light-emitting diodes (LEDs) face challenges related to their extremely low external quantum efficiency, which is predominantly attributed to the remarkably inadequate transverse magnetic (TM) light extraction efficiency (LEE). In this study, we employ angle-resolved cathodoluminescence (ARCL) spectroscopy to assess the optical polarization of (0001)-oriented AlGaN multiple quantum well (MQW) structures in UV-C LEDs, in conjunction with a focused ion beam and scanning electron microscopy (FIB/SEM) system to etch samples with various inclination angles (θ) of sidewall. This technique effectively distinguishes the spatial distribution of TM- and transverse electric (TE)-polarized photons contributing to the luminescence of the MQW structure. CL spectroscopy confirms that UV-C LEDs with a θ of 35° exhibit the highest CL signal compared to samples with other θ. Furthermore, we establish a model using Finite Difference Time Domain (FDTD) simulation to validate the mechanism of the outcomes. The complementary contribution of TM and TE photons at different specific angles are distinguished by ARCL and confirmed by simulation. At angles near the sidewall, the CL is dominated by the TM photons, which mainly contribute to the increased LEE and the decreased degree of polarization (DOP) to make the spatial distribution of CL more uniform. Additionally, this method allows us to analyze the polarization of light without the need for polarizers, enabling the differentiation of TE and TM modes. This distinction provides flexibility for selecting different emission mode based on various application requirements. The presented approach not only opens up new opportunities for enhanced UV-C light extraction but also provides valuable insights for future endeavors in device fabrication and epitaxial film growth. © 2024, The Authors. All rights reserved.

关键词： Light emitting diodes

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Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices

Metal Migration Induced Breakdown from Gate Contact in Bulk ...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Xin Yang Yihong Qing Kuei-Shu Chang-Liao Yuchong Qiao Chaolun Wang Zhiwei Liu Luoyong Li Chihang Tsai Yongren Wu Yazhen Xie Weisong Yu Xing Wu Shanghai Key Laboratory of Multidimensional Information Processing East China Normal University Shanghai China Center for Advanced Semiconductor & Integrated Micro-System University of Electronic Science and Technology of China Chengdu China Engineering & System Science National Tsing Hua University Taiwan China China Chinaisti (shanghai) Testing Technology Co. Ltd Shanghai China

Bulk fin field-effect transistor (FinFET) devices with excellent gate control ability are promising to succeed the planar devices under Moore’s law. With the scaling down of the feature size, the reliability of the FinFET device becomes an urgent issue. Also, the miniaturized three-dimensional structure of bulk FinFET makes the failure characterization more challenging. In this paper, we carried out the direct current (DC) breakdown and transmission line pulse (TLP) breakdown in the bulk FinFET. Corresponding microstructural and chemical elements’ differences between gate contact and gate electrode are characterized by transmission electron microscopy (TEM). For both experiments, the fin nearest to gate contact is completely damaged under electrical stressing. The destruction of DC is more serious, which has a large area fusion with metal migration. The TLP damage is local and tends to form a void. The gate contact structure is intact with slight elements’ migration. This work paves a guideline for the reliability improvements of FinFET.

关键词： integrated circuits Electric breakdown Transmission electron microscopy Contacts Metals Logic gates FinFETs

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applications of MXenes in human-like sensors and actuators

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Nano Research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou Ding Sun Kai Wang Mark H.Rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China School of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

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