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Technology Roadmap for Flexible Sensors

ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Field-free current-induced magnetization switching of a room temperature van der Waals magnet for neuromorphic computing

arXiv

引用

arXiv 2024年

作者： Zhou, Chenxi Guo, Zhe Li, Qifeng Zhang, Gaojie Wu, Hao Chen, Jinsen Li, Rongxin Zhang, Shuai Cao, Cuimei Xiong, Rui Chang, Haixin You, Long School of Integrated Circuits Wuhan National Laboratory for Optoelectronics Key Laboratory of Information Storage System Ministry of Education of China Huazhong University of Science and Technology Wuhan430074 China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen518000 China School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Wuhan430074 China Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education School of Physics and Technology Wuhan University Wuhan430072 China Center for Joining and Electronic Packaging State Key Laboratory of Material Processing and Die & Mold Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan430074 China

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which can be readily acquired by using the two-dimensional (2D) van der Waals (vdW) materials. Recently, a 2D ferromagnetic material Fe3GaTe2 has been discovered to possess the above-room-temperature Curie temperature and strong perpendicular magnetic anisotropy (PMA), providing an excellent candidate to build spintronic devices. On the other hand, an external magnetic field is necessary for the SOT-driven deterministic switching of perpendicular magnetization, which has become a block for the real applications. Here, we realize the field-free SOT switching of Fe3GaTe2 at room temperature based on the Fe3GaTe2/MnPt heterostructure. In addition, inspired by the superiority of 2D materials in 3D heterogeneous integration, we explore the potential of our device in the computing in memory (CIM). With the application of the current pulses, the gradual switching of our device at zero field imitates the function of artificial synapse in the convolutional neural network (CNN), achieving a high accuracy (~ 92.8%) pattern recognition. Our work proposes a feasible solution for field-free SOT switching in 2D vdW spintronic devices, which paves the way for applications in magnetic memory and neuromorphic computing. Copyright © 2024, The Authors. All rights reserved.

关键词： Van der Waals forces

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"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

arXiv

引用

arXiv 2023年

作者： Wei, Maoliang Xu, Kai Tang, Bo Li, Junying Yun, Yiting Zhang, Peng Wu, Yingchun Bao, Kangjian Lei, Kunhao Chen, Zequn Ma, Hui Sun, Chunlei Liu, Ruonan Li, Ming Li, Lan Lin, Hongtao State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Institute of Microelectronics the Chinese Academy of Sciences Beijing100029 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Zhejiang Hangzhou310030 China Institute of Advanced Technology Westlake Institute for Advanced Study Zhejiang Hangzhou310024 China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits. © 2023, CC BY.

关键词： Selenium compounds

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Ideal type-II Weyl points in topological circuits

arXiv

引用

arXiv 2019年

作者： Li, Rujiang Lv, Bo Tao, Huibin Shi, Jinhui Chong, Yidong Zhang, Baile Chen, Hongsheng State Key Laboratory of Modern Optical Instrumentation Electromagnetics Academy at Zhejiang University Zhejiang University Hangzhou China Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Key Laboratory of In-Fiber Integrated Optics of Ministry of Education College of Science Harbin Engineering University Harbin China School of Software Engineering Xi’an Jiaotong University Xi’an China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore Centre for Disruptive Photonic Technologies Nanyang Technological University Singapore637371 Singapore

Weyl points (WPs), as nodal degenerate points in three-dimensional (3D) momentum space, are ideal if they are symmetry-related, well-separated, residing at the same energy and far from the nontopological bands. Although type-II WPs show some unique features compared with type-I counterparts, ideal type-II WPs have not yet been reported due to the lack of an ideal Weyl system with enough flexibility to tilt the dispersion bands. By stacking two-dimensional (2D) layers of inductor-capacitor (LC) resonator dimers with the breaking of parity inversion symmetry, here we experimentally realize the topological circuits with only the topological bands and observe a minimal number of four ideal type-II WPs. Two hallmark features of type-II WPs: a strongly tilted band structure with two group velocities having the same sign near type-II WPs and the topological surface states in an incomplete bandgap have been demonstrated. Our results establish an ideal system to the further study of Weyl physics and provide a new perspective to the access of topological matters. Copyright © 2019, The Authors. All rights reserved.

关键词： Timing circuits

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Excellent Energy Storage Properties in Zro2 Toughened Bst-Based Relaxor Ferroelectric Ceramics Via Multi-Scale Synergic Regulation

SSRN

引用

SSRN 2023年

作者： Yang, Fan Bao, Yizheng Zeng, Biao Wu, Jiyue Li, Xin Sun, Yiyang Chen, Ying Wang, Genshui Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China The State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China National Key Laboratory of Materials for Integrated circuits Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China

Lead-free ceramic capacitors offer ultrahigh power density and ultrafast discharging rates, making them critical energy storage components for advanced pulsed power systems. However, the greatest obstacle to broader applications remains the relatively low energy storage density. In this study, a relaxor ferroelectric ceramic based on (0.6-x)Ba0.55Sr0.45TiO3-0.4Bi0.5Na0.5TiO3-xSrZrO3 ((0.6-x)BST-0.4BNT-xSZ) is prepared using the tape casting method, resulting in an excellent energy density (Wrec ≈ 10.0 J cm-3) and high energy storage efficiency (η ≈ 91%). The solid solution of linear dielectrics SrZrO3 synergistically regulates both relaxor properties and breakdown strength. The variation of relaxor property was explored utilizing New Glass model and the multi-polarization model, with confirmation provided by piezoresponse force microscopy. Furthermore, the breakdown strength could be attributed to improvements in electric insulation and the widening of the bandgap. As SZ content increases, the in-situ emergence of the second phase ZrO2, accompanied by a martensitic transformation, not only improves the fracture toughness of ceramics but also serves to elongate the breakdown path. Encouragingly, 0.4BST-0.4BNT-0.2SZ also achieves excellent temperature stability (-95-125 ℃), frequency stability (1-1000 Hz), cycling reliability (1-106 cycles), and great charging-discharging properties. This multiscale synergic regulation strategy plays a guiding role in the screening of high-performance energy storage dielectric materials. © 2023, The Authors. All rights reserved.

关键词： Ductile fracture

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Recent Advances in Triboelectric Nanogenerators: From Technological Progress to Commercial applications

引用

ACS Nano 2023年第12期17卷 11087-11219页

作者： Choi, Dongwhi Lee, Younghoon Lin, Zong-Hong Cho, Sumin Kim, Miso Ao, Chi Kit Soh, Siowling Sohn, Changwan Jeong, Chang Kyu Lee, Jeongwan Lee, Minbaek Lee, Seungah Ryu, Jungho Parashar, Parag Cho, Yujang Ahn, Jaewan Kim, Il-Doo Jiang, Feng Lee, Pooi See Khandelwal, Gaurav Kim, Sang-Jae Kim, Hyun Soo Song, Hyun-Cheol Kim, Minje Nah, Junghyo Kim, Wook Menge, Habtamu Gebeyehu Park, Yong Tae Xu, Wei Hao, Jianhua Park, Hyosik Lee, Ju-Hyuck Lee, Dong-Min Kim, Sang-Woo Park, Ji Young Zhang, Haixia Zi, Yunlong Guo, Ru Cheng, Jia Yang, Ze Xie, Yannan Lee, Sangmin Chung, Jihoon Oh, Il-Kwon Kim, Ji-Seok Cheng, Tinghai Gao, Qi Cheng, Gang Gu, Guangqin Shim, Minseob Jung, Jeehoon Yun, Changwoo Zhang, Chi Liu, Guoxu Chen, Yufeng Kim, Suhan Chen, Xiangyu Hu, Jun Pu, Xiong Guo, Zi Hao Wang, Xudong Chen, Jun Xiao, Xiao Xie, Xing Jarin, Mourin Zhang, Hulin Lai, Ying-Chih He, Tianyiyi Kim, Hakjeong Park, Inkyu Ahn, Junseong Huynh, Nghia Dinh Yang, Ya Wang, Zhong Lin Baik, Jeong Min Choi, Dukhyun Kyung Hee University Gyeonggi Yongin17104 Korea Republic of Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Department of Mechanical Engineering Soft Robotics Research Center Seoul National University Seoul08826 Korea Republic of Department of Mechanical Engineering Gachon University Seongnam13120 Korea Republic of Department of Biomedical Engineering National Taiwan University Taipei10617 Taiwan Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing Hua University Hsinchu30013 Taiwan School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon16419 Korea Republic of Sungkyunkwan University 2066 Seobu-ro Gyeonggi Suwon16419 Korea Republic of Department of Chemical and Biomolecular Engineering National University of Singapore 4 Engineering Drive 4 117585 Singapore Division of Advanced Materials Engineering Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Department of Physics Inha University 100 Inha-ro Incheon22212 Korea Republic of School of Materials Science & Engineering Yeungnam University Gyeongbuk Gyeongsan38541 Korea Republic of 291 Daehak-ro Daejeon34141 Korea Republic of School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore Institute of Flexible Electronics Technology of Tsinghua Zhejiang Jiaxing314000 China Nanomaterials and System Lab Major of Mechatronics Engineering Faculty of Applied Energy System Jeju National University Jeju632-43 Korea Republic of School of Engineering University of Glasgow GlasgowG128QQ United Kingdom Seoul02792 Korea Republic of Department of Physics Inha University Incheon22212 Korea Republic of Suwon16419 Korea Republic of Department of

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade. © 2023 The Authors. Published by American Chemical Society

关键词： Nanogenerators

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Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

引用

arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

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Flexible Surface Acoustic Wave (Saw) Magnetic Sensor Based on Terfenol-D Grating-Arrayed Thin Film

SSRN

引用

SSRN 2024年

作者： Qadir, Akeel Muhammad, Fayyaz Shafique, Shareen Haider, Zeeshan Zhimin, Yang Chuanjiao, Hou Xu, Xiaoqing Han, Gao Shi, Tianjin Karim, Shahid Xu, Hongsheng Farooq, Umar SchoolofInformation Engineering Xi’an Eurasia University 710065 China Key Laboratory of Micro and Nano Electro-Mechanical Systems Department of Microsystems Engineering NorthwesternPolytechnicalUniversity Xi'An710072 China Islamabad Pakistan Department of Microelectronic Science and Engineering Laboratory of Clean Energy Storage and Conversion School of Physical Science and Technology Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean andAtmosphere Ningbo University Ningbo315211 China Institute ofbiomedicalandhealthengineering Shenzhen Institute ofAdvancedTechnology China Hangzhou Hikvision DigitalTechnology Co. Ltd Hangzhou310052 China Faculty ofScience andTechnology ILMA University Karachi Pakistan Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits Anhui University HefeiAnhui230601 China

In recent years, research on the development of SAW based magnetic sensors has gained substantial interest since magnetic sensors are vital measuring components in numerous industrial, engineering and scientific applications. Literature survey revealed that SAW magnetic sensors are generally developed using rigid substrates which make them unsuitable to be mounted on uneven or bent surfaces. In this paper, SAW magnetic sensor design based on Terfenol-D grating-arrayed thin film is presented. The design is implemented on flexible Lithium Niobate (LiNbO3) substrate in order to address the design limitations associated with the conventional SAW magnetic sensors that are implemented on rigid substrates. The experimental results obtained suggest that the proposed SAW magnetic sensor is durable and have tendency to undergo mechanical deformation under stress while keeping the high performance. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Correction: Photoluminescence tuning in carbon dots: surface passivation or/and functionalization, heteroatom doping

引用

Journal of Materials Chemistry C 2019年第10期7卷 3105-3105页

作者： Linbo Li Tao Dong Institute of Applied Micro-Nano Science and Technology – IAMNST Chongqing Key Laboratory of Colleges and Universities on Micro-Nano Systems Technology and Smart Transducing Chongqing Engineering Laboratory for Detection Control and Integrated System National Research Base of Intelligent Manufacturing Service Chongqing Technology and Business University Nan'an District 400067 Chongqing China Institute for Microsystems – IMS Faculty of Technology Natural Sciences and Maritime Sciences University of South-Eastern Norway Postboks 235 3603 Kongsberg Norway

Correction for ‘Photoluminescence tuning in carbon dots: surface passivation or/and functionalization, heteroatom doping’ by Linbo Li et al., J. Mater. Chem. C, 2018, 6, 7944–7970.

Correction for ‘Photoluminescence tuning in carbon dots: surface passivation or/and functionalization, heteroatom doping’ by Linbo Li et al., J. Mater. Chem. C, 2018, 6, 7944–7970.

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Noble Metal Dichalcogenides: A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors (Adv. Funct. Mater. 5/2020)

引用

Advanced Functional Materials 2020年第5期30卷

作者： Zhen Wang Peng Wang Fang Wang Jiafu Ye Ting He Feng Wu Meng Peng Peisong Wu Yunfeng Chen Fang Zhong Runzhang Xie Zhuangzhuang Cui Liang Shen Qinghua Zhang Lin Gu Man Luo Yang Wang Huawei Chen Peng Zhou Anlian Pan Xiaohao Zhou Lili Zhang Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China University of Chinese Academy of Sciences Beijing 100049 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Jiangsu Key Laboratory of ASIC Design Nantong University Nantong Jiangsu 226019 China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province College of Materials Science and Engineering Hunan University Changsha 410082 China

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