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Reconfigurable Three-Dimensional Thermal Dome

engineering 2025年第3期46卷 236-244页

作者： Yuhong Zhou Fubao Yang Liujun Xu Pengfei Zhuang Dong Wang Xiaoping Ouyang Ying Li Jiping Huang State Key Laboratory of Surface Physics&Key Laboratory of Micro-and Nano-Photonic Structures(Ministry of Education) Department of PhysicsFudan UniversityShanghai 200438China Graduate School of China Academy of Engineering Physics Beijing 100193China International Joint Innovation Center The Electromagnetics Academy at Zhejiang UniversityZhejiang UniversityHaining 314400China State Key Laboratory of Extreme Photonics and Instrumentation&Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems and Applications of Zhejiang Province Zhejiang UniversityHangzhou 310027China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China

Thermal metamaterial represents a groundbreaking approach to control heat conduction,and,as a crucial component,thermal invisibility is of utmost importance for heat *** the flourishing development of thermal invisibility schemes,they still face two limitations in practical ***,objects are typically completely enclosed in traditional cloaks,making them difficult to use and unsuitable for objects with heat ***,although some theoretical proposals have been put forth to change the thermal conductivity of materials to achieve dynamic invisibility,their designs are complex and rigid,making them unsuitable for large-scale use in real threedimensional(3D)***,we propose a concept of a thermal dome to achieve 3D *** scheme includes an open functional area,greatly enhancing its usability and *** features a reconfigurable structure,constructed with simple isotropic natural materials,making it suitable for dynamic *** performance of our reconfigurable thermal dome has been confirmed through simulations and experiments,consistent with the *** introduction of this concept can greatly advance the development of thermal invisibility technology from theory to engineering and provide inspiration for other physical domains,such as direct current electric fields and magnetic fields.

关键词： Thermal domes Reconfigurable metamaterials Three-dimensional invisibility

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Two-dimensional SnP_(2)Se_(6) with gate-tunable Seebeck coefficient for telecommunication band photothermoelectric detection

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InfoMat 2024年第10期6卷 19-30页

作者： Bing-Xuan Zhu Cheng-Yi Zhu Jing-Kai Qin Wen He Lin-Qing Yue Pei-Yu Huang Dong Li Ruo-Yao Sun Sheng Ye Yu Du Jie-He Sui Ming-Yu Li Jun Mao Liang Zhen Cheng-Yan Xu School of Integrated Circuits Harbin Institute of Technology(Shenzhen)Shenzhenthe People's Republic of China Sauvage Laboratory for Smart Materials School of Materials Science and EngineeringHarbin Institute of Technology(Shenzhen)Shenzhenthe People's Republic of China MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Harbin Institute of TechnologyHarbinthe People's Republic of China State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyHarbinthe People's Republic of China

Photothermoelectric (PTE) detectors combine photothermal and thermoelectricconversion, surmounting material band gap restrictions and limitations related tomatching light wavelengths, have been widely used in telecommunication banddetection. Two-dimensional (2D) materials with gate-tunable Seebeck coefficientcan induce the generation of photothermal currents under illumination by theasymmetric Seebeck coefficient, making them promising candidate for PTE detectorsin the telecommunication band. In this work, we report that a newly exploredvan der Waals (vdW) layered material, SnP_(2)Se_(6), possessing excellent field regulationcapabilities and behaviors as an ideal candidate for PTE detector *** the assistance of temperature-dependent Raman characterization, thesuspended atomic thin SnP_(2)Se_(6) nanosheets reveal thickness-dependent thermalconductivity of 1.4–5.7 W m^(-1) K^(-1) at room temperature. The 2D SnP_(2)Se_(6) demonstrateshigh Seebeck coefficient (S) and power factor (PF), which are estimated tobe -506 μV K^(-1) and 207 μWm^(-1) K^(-2), respectively. By effectively modulating theSnP_(2)Se_(6) localized carrier concentration, which in turn leads to inhomogeneousSeebeck coefficients, the designed dual-gate PTE detector with 2D SnP_(2)Se_(6) channeldemonstrates wide spectral photoresponse in telecommunication bands, yieldinghigh responsivity (R = 1.2 mA W^(-1)) and detectivity (D^(*) = 6× 10^(9) Jones)under 1550 nm light illumination. Our findings provide a new material platformand device configuration for the telecommunication band detection.

关键词： photodetection photothermoelectric effect Seebeck coefficient telecommunication bands two-dimensional semiconductor

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High-performance flexible Sb_(2)Se_(3) thin-film photodetector for tunable color imaging and wearable physiological monitoring applications

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Nano Research 2025年第2期18卷 687-698页

作者： Shuo Chen Hong-Bo Li Yi Fu Guo-Qiang Liu Muhammad Ishaq Jun Luo Jian-Min Li Bo Che Jing-Ting Luo Liming Ding Tao Chen Guang-Xing Liang Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China The Hospital of Shenzhen General Station of Exit and Entry Frontier Inspection Shenzhen 518024China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Hefei National Research Center for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy ConversionDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectronic *** contrast,the exploration of flexible Sb_(2)Se_(3) photoelectric devices are less attempted,though it possesses unique one-dimensional(1D)crystal structure to enable large deformation ***,we develop a flexible Sb2Ses thin-film photodetector on polyimide *** to the high-quality SbSes light absorber and benign interfaces at both back contact and heterojunction regions,the carrier dynamics are effectively *** leading flexible Sb_(2)Se_(3) photodetector showcases self-powered and broadband features,with exceptional responsivity of 0.51 A·W^(-1) and realistic detectivity up to 1.32×10^(13) Jones,ultra-fast response speed of 49 ns/351 ns of rise and decay times,and remarkable mechanical deformation stability,flourishing the high-level development for flexible Sb_(2)Se_(3) ***,a tunable single/dual-color flexible imaging system under band alignment modulation,along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb,Ses photodetectors.

关键词： Sb_(2)Se_(3) flexible thin-film photodetector color imaging heart rate arterial blood oxygen saturation

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction

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Chinese Physics B 2023年第2期32卷 193-200页

作者：刘增都灵张少辉边昂方君鹏邢晨阳李山汤谨诚郭宇锋唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China

A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas *** lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test *** simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关键词： gas sensor SnO_(2)–SnO porous GaN heterojunction

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Low thermal conductivity and promising thermoelectric performance induced by resonant bonding in a two-dimensional lead-tin-selenide ordered alloy

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Physical Review Applied 2024年第5期22卷 054013页

作者： Zhongwei Zhang Cuiqian Yu Shuang Lu Sebastian Volz Jie Chen Center for Phononics and Thermal Energy Science China–EU Joint Lab for Nanophononics MOE Key Laboratory of Advanced Micro-structured Materials School of Physics Science and Engineering Laboratory for Integrated Micro and Mechatronic Systems CNRS-IIS UMI 2820

Resonant bonding, arising from an unsaturated electronic occupation configuration, has been demonstrated as a crucial signature for intrinsically low lattice thermal conductivity (κl), which offers a promising avenue for achieving high-performance thermoelectric materials. Using density-functional theory combined with Boltzmann transport equation calculations, we demonstrate the significant impact of resonant bonding on the thermal transport properties of a two-dimensional lead-tin-selenide ordered alloy, namely (Pb0.5Sn0.5)Se. Our findings demonstrate that resonant bonding induces interactions that extend beyond the typical covalent bonding range, i.e., resonant interaction, as evidenced by the perturbed electron density distribution, the nonvanishing trace of interaction force constants over long distances, and the large convergent cutoff radius observed in thermal conductivity calculations. Consequently, the resonant interactions lead to enhanced phonon-scattering events and strong anharmonicity, resulting in an ultralow κl around 1Wm−1K−1 at 300 K. More interestingly, an excellent thermoelectric performance is observed in two-dimensional (Pb0.5Sn0.5)Se, with a remarkably high ZT value around 3 at 800 K. This study highlights the underlying relation between the electronic bonding and thermal transport property, providing valuable insights for the design of high-efficiency thermoelectric materials.

关键词： Chemical bonding Lattice thermal conductivity 2-dimensional systems Alloys Semiconductor compounds Thermoelectrics Boltzmann theory Density functional calculations

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Dual Interfacial Design Enables Efficient and Stable Semitransparent Wide-Bandgap Perovskite Solar Cells With Scalable-Coated Silver Nanowire Contact for Tandem applications

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SusMat 2025年第1期5卷 151-158页

作者： Chaoran Chen Lianglan Liu Ting Huang Biao Tu Hongbing Li Qingchen He Qiaoyan Ma Zhenhua Xu Shi Chen Jianmin Li Guangxing Liang Yaohua Mai Fei Guo Institute of New Energy Technology College of Information Science and TechnologyJinan UniversityGuangzhouChina Key Laboratory of Renewable Energy Chinese Academy of SciencesGuangzhouChina CNBM(Chengdu)Optoelectronic Materials Co. Ltd.ChengduChina School of Materials Science and Engineering Ningbo Tech UniversityNingboChina Henan Key Laboratory of Photovoltaic Materials School of Future TechnologyHenan UniversityZhengzhouChina Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education and School of Physics and TechnologyWuhan UniversityWuhanChina Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenGuangdongChina Guangdong Mellow Energy Co. Ltd.GuangzhouChina

Semitransparent perovskite solar cells(PSCs)hold great potential for applications in aesthetic building facades and top-illuminated tandem *** tin oxide is currently the frequently used top transparent contact,which would degrade the underlying perovskites during sputter ***,we report low-temperature,scalable solution-processed silver nanowires(AgNWs)as top window electrodes for fabricating efficient and stable semitransparent *** a decisive step,an impermeable SnO_(2) thin film deposited by atomic layer deposition(ALD)is applied to prevent chemical reactions between AgNWs and halides of *** parallel,the molecular absorption of propylenediamine iodine(PDADI)on perovskite surface,instead of forming two-dimensional(2D)perovskite capping layer,is found to effectively passivate the perovskite surface,which simultaneously leads to remarkably enhanced thermal stability,thus affording the processing window for ALD-SnO_(2) ***,the prepared semitransparent PSCs with a bandgap of 1.71 eV achieve a champion efficiency of 17.5%,being the highest efficiency for semitransparent PSCs with AgNWs top *** these bases,we constructed a four-terminal perovskite/copper indium gallium diselenide(CIGS)tandem cell,giving a state-of-the-art efficiency of 26.85%.

关键词： perovskite/GIGS semitransparent silver nanowires tandem photovoltaics

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Spin transport of half-metal Mn_(2)X_(3) with high Curie temperature:An ideal giant magnetoresistance device from electrical and thermal drives

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Frontiers of physics 2024年第4期19卷 125-135页

作者： Bin Liu Xiaolin Zhang Jingxian Xiong Xiuyang Pang Sheng Liu Zixin Yang Qiang Yu Honggen Li Sicong Zhu Jian Wu Hubei Province Key Laboratory of Systems Science in Metallurgical Process The State Key Laboratory for Refractories and MetallurgyCollaborative Innovation Center for Advanced SteelsInternational Research Institute for Steel TechnologyWuhan University of Science and TechnologyWuhan 430081China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education and School of Physical and Technology Wuhan UniversityWuhan 430072China College of Advanced Interdisciplinary Studies Nanhu Laser LaboratoryNational University of Defense TechnologyChangsha 410073China Department of Mechanical Engineering National University of SingaporeSingapore 117575Singapore i-Lab&Key Laboratory of Nanodevices and Applications&Key Laboratory of Nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and NanoBionicsChinese Academy of SciencesSuzhou 215123China Institute of Optical Science and Technology School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China

Currently,magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information *** a result,there is a growing urgency for twodimensional half-metallic materials with a high Curie temperature(TC).This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn_(2)X_(3)(X=S,Se,Te).Additionally,the potential application of Mn_(2)X_(3) as magneto-resistive components is *** three of them fall into the category of ferromagnetic *** particular,the Monte Carlo simulations indicate that the TC of Mn2S3 reachs 381 K,noticeably greater than room *** findings present notable advantages for the application of Mn2S3 in spintronic ***,a prominent spin filtering effect is apparent when employing non-equilibrium Green’s function simulations to examine the transport *** resulting current magnitude is approximately 2×10^(4) nA,while the peak gigantic magnetoresistance exhibits a substantial value of 8.36×10^(16)%.It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is *** brief,Mn_(2)X_(3) exhibits outstanding features as a highTC half-metal,exhibiting exceptional capabilities in electrical and thermal drives spin ***,it holds great potential for usage in spintronics applications.

关键词： half-metals Mn_(2)X_(3) high Curie temperature electrical and thermal GMR

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A Complementary Electromagnetic Paradigm for Collaborative Autonomous Vehicles 13

A Complementary Electromagnetic Paradigm for Collaborative A...

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13th Asia-Pacific International Symposium on Electromagnetic Compatibility and Technical Exhibition, APEMC 2022

作者： Li, Ruifeng Liang, Xinglei Zhang, Ling Li, Da Li, Er-Ping Zhejiang University College of Information Science & Electronic Engineering The Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems and Applications Hangzhou310027 China

ISBN: (数字)9781665416719

ISBN: (纸本)9781665416719

With the development of 5G communication and the continuous upgrading of AI algorithms, the realization of collaborative autonomous vehicles (CAVs) is gradually becoming possible. The perception layers of the current CAVs detect information mainly through simultaneous positioning and mapping (SLAM) and prior maps. However, SLAM requires exhaustive computing resources, and prior maps cannot cope with time-varying electromagnetic environments. Therefore, a complementary electromagnetic paradigm for CAVs is proposed, and a simple demo of this paradigm is created using commercial radio frequency identification (RFID) tags. Specifically, this paper takes vehicle localization as a specific application scenario in the absence of GNSS information, showing the great potential of applying this complementary electromagnetic paradigm to the decision layer of CAVs based on electromagnetic characteristic analysis. © 2022 IEEE.

关键词： Autonomous vehicles

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Bayesian Machine Learning for Extracting Parasitic Parameters of GSG Calibration Standards 13

Bayesian Machine Learning for Extracting Parasitic Parameter...

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13th Asia-Pacific International Symposium on Electromagnetic Compatibility and Technical Exhibition, APEMC 2022

作者： Zhou, Jiefeng Zhang, Ling Li, Da Chen, Junhui Wu, Chenghan Jiang, Li Li, Er-Ping Zhejiang University College of Information Science and Electronic Engineering The Zhejiang Key Laboratory of Advanced Micro Nano Electronic Devices & Smart Systems and Applications Hangzhou China

ISBN: (数字)9781665416719

ISBN: (纸本)9781665416719

This paper proposes a method to extract the parasitic parameters of the calibration standards by using the Bayesian optimization algorithm. After several rounds of optimization, the parasitic parameters are optimized so that the calculated value is closest to the full-wave simulation value. The advantage is that only one S-parameter of a known device needs to be used to obtain the parasitic parameters of all calibration standards. Compared with traditional measurement methods, it has the advantages taking less measurement times and coverage of frequency bandwidth. To prove the validity of the technique, the S-parameter of the 4mm microstrip line was simulated as a reference. The extracted parasitic parameters were used in the 16-term error model, the calibration and simulation results are in good agreement up to 100GHz. © 2022 IEEE.

关键词： Scattering parameters

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