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Synergistic impeding of phonon transport through resonances and screw dislocations

Physical Review B 2021年第8期103卷 085414-085414页

作者： Hongying Wang Yajuan Cheng Masahiro Nomura Sebastian Volz Davide Donadio Xiaohong Zhang Shiyun Xiong Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Soochow University 199 Ren'ai Road Suzhou 215123 Jiangsu People's Republic of China Key Laboratory of Organic Synthesis of Jiangsu Province and the State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials College of Chemistry Chemical Engineering and Materials Science Soochow University Suzhou 215123 People's Republic of China Institute of Industrial Science The University of Tokyo Tokyo 153-8505 Japan Laboratory for Integrated Micro Mechatronic Systems (LIMMS/CNRS-IIS) The University of Tokyo Tokyo 153-8505 Japan Department of Chemistry University of California Davis One Shields Avenue Davis California 95616 USA

Improving the control of heat flow at the nanoscale is essential for promoting its applications in many fields, such as energy conversion, thermal informatics, and communication technologies. Here we perform a systematic study on the synergistic effect of screw dislocations and surface resonators on thermal transport of Si nanowires and the corresponding mechanisms based on molecular dynamics simulations. We uncover that screw dislocations reduce the thermal conductivity by enhancing the anharmonicity of nanowires due to the nonhomogeneous stress field. For resonant structures, we demonstrate that the suppression of relaxation time is the main mechanism for thermal conductivity reduction. The suppression of relaxation time by more than two orders of magnitude below 4 THz dramatically reduces the resonant structure thermal conductivity, while the previously proposed group velocity reduction mechanism can only impede phonon transport beyond 4 THz slightly. By comparing the mechanisms produced by dislocations and resonators, we find that the resonators have a stronger effect over screw dislocations in impeding the phonon transport at low frequencies while it becomes opposite at high frequencies. As a result, they can be combined together to manipulate phonon transport synergistically at all frequencies. Our findings not only provide insights into the mechanisms of thermal conductivity engineering by screw dislocations and surface resonators, but they also illustrate a paradigm for ultralow thermal conductivity design through the tailoring of the entire frequency range of phonon transport.

关键词： Heat transfer Lattice thermal conductivity Phonons Nanowires Molecular dynamics

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Increasing the bandwidth of slow ligh in fishbone-like grating waveguides

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Photonics Research 2019年第2期7卷 240-245页

作者： RAN HAO GAOYANG YE JIANYAO JIAO ERPING LI Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems and Applications College of Information Science and Electronic EngineeringZhejiang University Zhejiang University-University of Illinois at Urbana-Champaign Institute Zhejiang University

Slow light, a technology to control the optical signal by reducing the group velocity, has been widely studied to obtain enhanced nonlinearities and increased phase shifts owing to its promoting of the light–matter interaction ability. In this work, a wideband slow light is achieved in a simple one-dimensional fishbone grating waveguide.A flat band indicating slow light with a group index of 13 and bandwidth over 10 nm is obtained by the plane wave expansion calculation, and the corresponding experimental results agree well with the theoretical prediction.A step taper is designed to compensate the coupling loss. The proposed fishbone grating waveguide is a good candidate for wideband slow light devices in light communication.

关键词： bandwidth slow fishbone-like

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Ferroelectric materials, devices, and chips technologies for advancedcomputing and memory applications: development and challenges

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science CHINA Information sciences 2025年第6期68卷

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Hangzhou 311231 China Faculty of Integrated Circuits Xidian University Xi'an 710071 China Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China School of Information Science and Engineering Shandong University Qingdao 266237 China College of Integrated Circuit Zhejiang University Hangzhou 311231 China School of Integrated Circuits Southeast University Nanjing 214026 China School of Integrated Circuits Peking University Beijing 100091 China School of Integrated Circuits Tsinghua University Beijing 100084 China Center for Quantum Matter School of Physics Zhejiang University Hangzhou 310027 China School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 China Department of Electronic Engineering Tsinghua University Beijing 100084 China National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University Shanghai 200240 China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Beijing 100871 China Hangzhou Huarui Chip Innovation Technology Co. Ltd. Hangzhou 311200 China

Hafnium (Hf) oxide-based ferroelectric materials haveemerged as a transformative platform for next-generation non-volatile memoryand advanced computing technologies. This review comprehensively examinesthe development, challenges, and applications of HfO$_applications$ ferroelectrics,emphasizing their CMOS compatibility, scalability, and robust polarizationat nanoscale dimensions. Breakthroughs in doping strategies, stressengineering, and V$_{\rm~O}$ control have stabilized the metastable orthorhombicphase, enabling high-performance devices such as ferroelectric RAM (FeRAM),ferroelectric field-effect transistors (FeFETs), and ferroelectric tunneljunctions (FTJs). These devices offer ultrafast switching, low powerconsumption, and multi-level storage, driving innovations in neuromorphiccomputing, in-memory processing, and cryogenic systems; nonetheless, theyface ongoing challenges in reliability, such as fatigue and imprint effects,and scalability at sub-5 nm technology nodes. Emerging frontiers, such aswurtzite-structured nitrides (e.g., AlScN) and antiferroelectricZrO$_applications$-based systems, have garnered significant attention due to theirexceptionally high remanent polarization and promising potential forenhanced endurance, respectively. Further addressing the reliability issuesof these emerging ferroelectric materials and the challenges associated withlarge-scale integration processes through interdisciplinary efforts willunlock the full potential of ferroelectric technologies,positioning them as pivotal enablers of post-Moore computing architecturesand sustainable AI-driven applications.

关键词： ferroelectric HfO$_{2}$ zirconium oxide ZrO$_{2}$ wurtzite AlScN FeRAM FeFET

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Spiral Field Generation in Smith-Purcell Radiation by Helical Metagratings

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Research 2019年第1期2019卷 1115-1122页

作者： Liqiao Jing Zuojia Wang Xiao Lin Bin Zheng Su Xu Lian Shen Yihao Yang Fei Gao Min Chen Hongsheng Chen Key Lab.of Advanced Micro/Nano Electronic Devices&Smart Systems of Zhejiang College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Department of Physics Massachusetts Institute of TechnologyCambridgeMA 02139USA School of Information Science and Engineering Shandong UniversityQingdao 266237China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

Moving electrons interacting with media can give rise to electromagnetic radiations and has been emerged as a promising platform for particle detection,spectroscopies,and free-electron *** this letter,we investigate the Smith-Purcell radiation from helical metagratings,chiral structures similar to deoxyribonucleic acid(DNA),in order to understand the interplay between electrons,photons,and object *** feld patterns can be generated while introducing a gradient azimuthal phase distribution to the induced electric dipole array at the cylindrical *** measurements show efcient control over angular momentum of the radiated feld at microwave regime,utilizing a phased electromagnetic dipole array to mimic moving charged *** angular momentum of the radiated wave is determined solely by the handedness of the helical structure,and it thus serves as a potential candidate for the detection of chiral *** fndings not only pave a way for design of orbital angular momentum free-electron lasers but also provide a platform to study the interplay between swif electrons with chiral objects.

关键词： momentum chiral angular

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Metal Halide Perovskite-Gated Organic Phototransistors for Efficient UV/DUV Detection

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Advanced materials (Deerfield Beach, Fla.) 2025年 e2500477页

作者： Jiangnan Xia Jiakun Xue Ping-An Chen Yu Liu Huan Wei Jiaqi Ding Yu Zhang Chengyuan Peng Zhenqi Gong Wenpei Shi Abd Rashid Bin Mohd Yusoff Yunfeng Deng Huajie Chen Lang Jiang Lei Liao Yuanyuan Hu Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China. National Key Laboratory of Power Semiconductor and Integration Technology Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China. Shenzhen Research Institute of Hunan University Shenzhen 518063 China. Department of Physics Faculty of Science Universiti Teknologi Malaysia Johor Bahru 81310 Malaysia. School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science Tianjin University Tianjin 300072 China. Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education College of Chemistry Xiangtan University Xiangtan 411105 China. College of Chemical Engineering Hebei University of Technology Tianjin 300401 China.

Conventional UV/DUV phototransistors, which rely on wide-bandgap semiconductor channels, encounter issues with material availability, processing complexity, and performance tunability. Perovskite-gated phototransistors (PGPTs) are introduced that decouple photoresponse and charge transport by using wide-bandgap metal halide perovskites (MHPs) as dielectric layers and non-wide-bandgap semiconductors as channels. This design offers material flexibility, simplified processing, and enhanced performance. Using the 2D Ruddlesden-Popper perovskite PEAPbBr (E = 3.0 eV) as the dielectric layer and the organic semiconductor (OSC) P3HT as the channel layer, UV phototransistors are successfully achieved with exceptional photodetection performance at operating voltages below 2 V, exhibiting a responsivity of 1960 mA W, a specific detectivity of 3 × 10 Jones, and a response time of ≈20 ms. Fabricated via low-temperature (≤100 °C) solution processing, this approach facilitates scalable production and is adaptable to various OSCs and other wide-bandgap MHP dielectrics, such as PEAPbCl (E = 3.6 eV) and PEASnI (E = 3.8 eV), extending their potential for DUV detection. As a proof-of-concept, an optical decoder for telecommunications is demonstrated using DUV PEAPbCl/PDVT-10 PGPTs, which are immune to ambient light interference. Additionally, these DUV phototransistors show potential for latent fingerprint detection due to their sensitivity to skin absorption characteristics.

关键词： DUV detection metal halide perovskite organic semiconductor phototransistor

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micropatterned piezoelectric films induced by modulated corona field for weak signal detection

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Chemical engineering Journal 2025年 517卷

作者： Fu Lv Chenghang Yu Bing Liu Jiamin Lin Zijian Hong Yongjun Wu Zhaohui Ren Qilong Zhang Shurong Dong Jikui Luo Juan Li Yuhui Huang School of Materials Science and Engineering Cyrus Tang Center for Sensor Materials and Applications Innovation Center of Yangtze Delta Institute of Fundamental and Transdisciplinary Research Zhejiang University Hangzhou Zhejiang 310058 China Nanhu Brain-computer Interface Institute Hangzhou Zhejiang 311100 China School of Engineering Hangzhou City University Hangzhou Zhejiang 310015 China College of Electronic Information and Engineering Hangzhou Dianzi University Hangzhou Zhejiang 310018 China Zhejiang Key Laboratory of Advanced Solid State Energy Storage Technology and Applications Taizhou Institute of Zhejiang University Taizhou Zhejiang 318000 China College of Information Science and Electronic Engineering Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Zhejiang University Hangzhou Zhejiang 310027 China College of Materials and Science Engineering Zhejiang University of Technology Hangzhou Zhejiang 310014 China

Enhancing the inherent piezoelectricity and introducing innovative structural designs are the two fundamental strategies for enhancing the pressure sensitivity of P(VDF-TrFE)-based sensors. In this study, we propose a scalable and cost-effective manufacturing approach that utilizes a modulated corona field to create micropatterns on the surface of P(VDF-TrFE) films, and enhance their piezoelectric properties during the annealing and recrystallization process. The micropatterned P(VDF-TrFE) films exhibit a distinctive “wavy” microstructure and possess ultrahigh piezoelectric properties (d 33 ∼ 35.6 pC/N), resulting in excellent sensitivity (∼477.94 mV/kPa). To unravel the underlying mechanism responsible for this superior performance, we employ finite element modeling and phase-field simulations. Our findings reveal that the modulated corona field generates an equipotential surface with a characteristic “wavy” distribution and promotes the creation of nucleation sites for the polar β phase in P(VDF-TrFE) films. A real-time monitoring system is further exploited with the obtained micropatterned P(VDF-TrFE) films for detecting radial artery pulse signals. The results obtained from this work hold great promise for the development of highly sensitive sensors, with wide-ranging applications in healthcare and environmental monitoring.

关键词： Flexible wireless biosensors micropatterned structure Phase-field simulations Piezoelectric polymer

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Demonstration of broadband topological slow light

arXiv

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arXiv 2022年

作者： Chen, Fujia Xue, Haoran Pan, Yuang Wang, Maoren Hu, Yuanhang Zhang, Li Chen, Qiaolu Han, Song Liu, Gui-Geng Gao, Zhen Zhou, Peiheng Yin, Wenyan Chen, Hongsheng Zhang, Baile Yang, Yihao Interdisciplinary Center for Quantum Information State Key Lab. of Modern Optical Instrumentation College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China ZJU-Hangzhou Global Science and Technology Innovation Center Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang ZJU-UIUC Institute Zhejiang University Hangzhou310027 China Jinhua Institute of Zhejiang University Zhejiang University Jinhua321099 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore637371 Singapore Centre for Disruptive Photonic Technologies The Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore639798 Singapore National Engineering Research Center of Electromagnetic Radiation Control Materials State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen518055 China

Slow-light devices are able to significantly enhance light-matter interaction due to the reduced group velocity of light, but a very low group velocity is usually achieved in a narrow bandwidth, accompanied by extreme sensitivity to imperfections that causes increased disorder-induced attenuation. Recent theories have suggested an ideal solution to this problem—unidirectional chiral photonic states, previously discovered in structures known as photonic topological insulators, not only resist backscattering from imperfections but can also be slowed down in the entire topological bandgap with multiple windings in the Brillouin zone. Here, we report on the experimental demonstration of broadband topological slow light in a photonic topological insulator. When coupled with periodic resonators that form flat bands, the chiral photonic states can wind many times around the Brillouin zone, achieving an ultra-low group velocity in the entire topological bandgap. This demonstration extends the scope of topological photonics into slow light engineering, and opens a unique avenue in the dispersion manipulation of chiral photonic states. © 2022, CC BY.

关键词： Slow light

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High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure

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Journal of Semiconductors 2020年第8期41卷 52-58页

作者： Chang Li Cheng Chen Jie Chen Tao He Hongwei Li Zeyuan Yang Liu Xie Zhongchang Wang Kai Zhang Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China School of Materials Science and Engineering Shanghai UniversityShanghai 200444China CAS Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)Shenzhen UniversityShenzhen 518060China International Iberian Nanotechnology Laboratory(INL) Avenida Mestre Jose Veiga s/nBraga 4715-330Portugal

Black phosphorous(BP),an excellent two-dimensional(2D)monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure,has been widely applied in various *** the essential building blocks for modern electronic and optoelectronic devices,high quality PN junctions based on semiconductors have attracted widespread ***,we report a junction field-effect transistor(JFET)by integrating narrow-gap p-type BP and ultra-wide gap n-typeβ-Ga2O3 nanoflakes for the first *** andβ-Ga2O3 form a vertical van der Waals(vdW)heterostructure by mechanically exfoliated *** BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around *** interestingly,by using the BP as the gate andβ-Ga2O3 as the channel,the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107,gate leakage current around as low as pA,maximum transconductance(gm)up to 25.3μS and saturation drain current(IDSS)of 16.5μA/μ***,it has a pinch-off voltage of–20 V and a minimum subthreshold swing of 260 mV/*** excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices.

关键词： two-dimensional semiconductor black phosphorous β-gallium oxide vdWs heterostructure junction field-effect transistor

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A 350 C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests

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Journal of micromechanics and microengineering 2020年第5期30卷

作者： Fang, Xudong Wu, Chen Zhao, Yulong Jiang, Zhuangde Rong, Weibing Feng, Zhihong Lv, Yuanjie State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Collaborative Innovation Center of Suzhou Nano Science and Technology Xi'an Jiaotong University Xi'an710049 China School of Mechanical Engineering Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Robotics and System Harbin Institute of Technology Harbin150080 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang050051 China

It has been a challenge to develop pressure sensors that can work in harsh environments. In this work, a piezoresistive n-type 4H-SiC pressure sensor is demonstrated, capable of working at 350 C under hydraulic and pneumatic pressure. The pressure measuring range of this sensor is 7 MPa and the chip dimension is 2.5 mm 2.5 mm 0.23 mm. A reliable Ti/TaSi2/Pt metal ohmic contact is used in the sensor and experimental results show that the metal combination can withstand a wide temperature range of 30 C-350 C. In order to avoid thermal stress induced by the mismatch of thermal expansion coefficients of different packaging materials when increasing temperature, a double-layer bonding scheme of cement glue and epoxy is proposed. The inner layer of the chip and the kovar alloy base are directly bonded with the epoxy, while the outer layer is wrapped with the high-temperature cement glue. Experiments confirm that this method can achieve reliable packaging with temperatures up to 350 C for 5 h. Based on the above key technologies, the sensitivity of this sensor can reach 13.2 mV V-1 kPa-1 and the test data exhibit high linearity and repeatability. Static tests prove that the sensor has good media compatibility which can operate under a hydraulic pressure load at 220 C and a barometric pressure load under 350 C. The sensor in this work can provide a reference for pressure measurements at high temperature and in complex media environments. © 2020 IOP Publishing Ltd.

关键词： Pressure sensors

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The Method of Locating Electromagnetic Radiation Source in Wire Bonded Ball Grid Array Package

The Method of Locating Electromagnetic Radiation Source in W...

引用

Workshop on Electromagnetic Compatibility of integrated Circuits (EMC Compo)

作者： Guang-Lai Hu Hang Jin Tuo-Min Tao Er-Ping Li College of Information Science & Electronic Engineering The Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems and Applications Zhejiang University Hangzhou China

With the development of integrated circuit technology, electromagnetic interference (EMI) problems become more and more prominent, and finding the location of the radiation source has become increasingly critical. This paper proposes a method to accurately locate the radiation source of the wire bonded ball grid array (WB-BGA) package. Firstly, the potential radiation sources of WB-BGA package are investigated. Secondly, an accurate three-dimensional full-wave simulation model of WB-BGA package is established. Finally, 3-m far-field radiation of potential radiation sources is obtained by simulation, where the radiation source is the largest one.

关键词： integrated circuit modeling Inductance System-on-chip Electromagnetic interference Substrates Dielectrics Electromagnetic compatibility

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