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IEEE International Conference on Micro Electro Mechanical Systems

作者： Xiaoli Fang Jinbo Wu Shibin Zhang Pengcheng Zheng Xinjian Ke Juxing He Mijing Sun Xin Ou State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China Shanghai Xin Ou Integration Technology Co. Ltd. China

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

For the first time, this work presents a solidly mounted (SM) longitudinally excited first-order antisymmetric lamb wave (A1) mode resonator with high-velocity support substrate (HS) and floating bottom electrode. Based on the X-cut LiNbO 3 /metal/SiO 2 /SiC substrate, HS-type A1 mode resonators have potential in achieving large bandwidth due to the large piezoelectric coefficient of LiNbO 3 . The maximum phase velocity of A1 mode can reach close to 7000 m/s, which is approximately twice that of conventional SAW. Additionally, this structure is easier for fabrication compared to the existing A1-mode resonator based on Bragg reflector (BR). The fabricated HS-type A1 mode resonators exhibit resonance frequencies (f s ) near 5 GHz and electromechanical coupling coefficient $\left({k_t^2}\right)$ between 10% and 16%. Through further optimization, the new type A1 mode resonator will be a promising solution for 5G New Radio (NR) and Wi-Fi 7 band filters.

关键词： Electrodes Electric potential Filters Three-dimensional displays Silicon carbide Resonant frequency Resonance Substrates Wireless fidelity Optimization

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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Ge-Based Graphene Fet for Low-Temperature Electronics

SSRN

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SSRN 2023年

作者： Wang, Chen Hong, Weida Zhang, Miao Jiang, Haitao National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

We reported a scalable self-aligned approach for fabricating graphene field-effect transistors (GFETs) based on intrinsic Ge substrates and primarily investigated the low-temperature electrical characteristics. Transfer-free graphene and low contamination process preserved the integrity of the graphene channel. At the same time, the self-alignment technique was used to reduce parasitic effects and improve transconductance and cut-off frequency. To further explore the electrical properties, we studied the direct current and radio frequency characteristics of GFETs over a temperature range of 4.2 K to 300 K, taking into consideration the temperature-dependent resistivity of intrinsic Ge and the temperature-stable of carrier mobility in Ge-based graphene with quasi-free-standing characteristics. The cut-off frequency experienced a remarkable boost at 4.2 K, reaching a maximum of 3.49 GHz for a 110 nm gate length. Meanwhile, transconductance showed a relatively small variation of only ~10% across the temperature range. This work represents a meaningful advancement in applying GFETs in the low-temperature, high-frequency domain. © 2023, The Authors. All rights reserved.

关键词： Graphene

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Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study

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Physical Review B 2024年第1期109卷 014105-014105页

作者： Dong Han Xian-Bin Li Nian-Ke Chen Dan Wang Sheng-Yi Xie Xue-Jiao Chen De-Zhen Shen State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 People's Republic of China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 People's Republic of China School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 People's Republic of China School of Physics and Electronics Hunan University Changsha 410082 People's Republic of China CAS Key Laboratory of Magnetic Materials Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 People's Republic of China

The thickness-dependent atomic structures of two-dimensional (2D) few-layer (FL) ZnO are systematically investigated by the first-principles calculations. It is found that the structural transformation between thinner FL ZnO with graphitic structure (FL gZnO) and thicker FL ZnO with wurtzite structure (FL wZnO) takes place at the critical thickness of 9–12 Zn-O atomic layers. At the thickness of 9–12 layers, both graphitic and wurtzite structures can coexist at room temperature. In FL gZnO, the interlayer interaction is a long-range Coulomb interaction, and the charge population of Zn and O inside does not change during the structural transformation. Moreover, we demonstrate that the structural transformation of FL ZnO originates from the competition between the high energy of the O 2pz orbital in the graphitic structure and the polar-surface-induced dipole energy in the wurtzite structure. Our microscopic understanding guides a clear direction of regulating the atomic structure of FL ZnO, further optimizing its electronic properties, which benefits developing function-advanced 2D stacked devices.

关键词： Crystal structure II-VI semiconductors Multilayer thin films Density functional calculations

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Boosting Excitonic Emission in 2D Multiple Quantum Well Superlattices by Plasma-Assisted Electrochemical Intercalation

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The journal of physical chemistry letters 2025年第21期16卷 5405-5411页

作者： Shixuan Wang Jian Li Peiyu Zeng Xu Han Jinshu Zhang Xiaoya Liu Weiqiao Xia Zhexing Duan Wei Liu Shaoqing Xiao Qiang Fu Qi Zhang Junpeng Lu Zhenhua Ni Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China. Engineering Research Center of IoT Technology Applications (Ministry of Education) School of Integrated Circuits Jiangnan University Wuxi 214122 China. Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China. National Research Center for Optical Sensors/Communications Integrated Networks School of Electronic Science and Engineering Southeast University Nanjing 211189 China.

Scalable fabrication of multiple quantum-well (MQW) superlattices via layer-by-layer stacking of two-dimensional (2D) materials remains challenging. Here, we propose a plasma-assisted electrochemical intercalation strategy to overcome this limitation. By intercalating 1-ethyl-3-methylimidazolium (EMIM) cations into multilayer molybdenum disulfide (MoS), followed by oxygen plasma intercalation, we achieve large-area (∼100 μm) MQW superlattices with hundreds of active layers. This approach enhances MoS photoluminescence (PL) by 2 orders of magnitude, with the PL quantum yield (PLQY) increasing with both excitation power and thickness. The enhancement arises from interlayer-decoupling-induced bandgap directness and electron extraction induced by oxygen plasma, effectively suppressing charge transfer between heterointerfaces. Our findings provide a scalable route for fabricating quasi-MQW superlattices, opening new avenues for photophysics research and next-generation optoelectronics.

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Dual code channel hybrid readout circuit based on high precision Photoelectric encoders

Dual code channel hybrid readout circuit based on high preci...

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International Conference on ASIC

作者： Feng-Wei Wang Yun-Hao Fu Yu-Chun Chang Fei Wang Dong-Xu Zhao State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China University of Chinese Academy of Sciences Beijing China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun China College of Electronic Science and Engineering Jilin University Changchun China State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China

The angular displacement sensor is a sensing tool used to detect angle, angular velocity, and angular velocity by converting the amount of angular displacement into an electrical output. Photoelectric encoders, which are currently utilized extensively in engineering practice, have many benefits over other types of angular displacement sensors, including high precision, high durability, small size, wide measuring range, and ease of installation. In this study, a photoelectric chip based on a dual code channel hybrid readout circuit for a high precision Photoelectric encoder is constructed. The circuit uses a single pseudo-random code element that corresponds to a single light and dark stripe of the incremental code mechanism. It can read absolute position information directly within the tolerance of a code plate engraving error of no more than a quarter cycle, and it can also perform sampling at a rate of 1MS/s while maintaining a resolution of 22 bits. The pseudo-random code channel generates two inverse pseudo-random codes using two separate photodetector arrays, which are then passed through two amplifiers and connected to a comparator for comparison. The result is a 1-bit digital signal as the code channel's final output. A 1-bit digital signal is the output's ultimate form. The device is 4.6mm by 3.5mm and uses a 0.35m CMOS technology.

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Versatile quantum microwave photonic signal processing platform based on coincidence window selection technique

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Advanced Photonics Nexus 2024年第5期3卷 130-139页

作者： Xinghua Li Yifan Guo Xiao Xiang Runai Quan Mingtao Cao Ruifang Dong Tao Liu Ming Li Shougang Zhang Chinese Academy of Sciences National Time Service CenterKey Laboratory of Time Reference and ApplicationsXi’anChina University of Chinese Academy of Sciences School of Astronomy and Space ScienceBeijingChina Hefei National Laboratory HefeiChina Chinese Academy of Sciences Institute of SemiconductorsState Key Laboratory on Integrated OptoelectronicsBeijingChina University of Chinese Academy of Sciences School of ElectronicElectrical and Communication EngineeringBeijingChina University of Chinese Academy of Sciences Center of Materials Science and Optoelectronics EngineeringBeijingChina

Quantum microwave photonics(QMWP)is an innovative approach that combines energy-time entangled biphoton sources as the optical carrier with time-correlated single-photon detection for highspeed radio frequency(RF)signal *** groundbreaking method offers unique advantages,such as nonlocal RF signal encoding and robust resistance to dispersion-induced frequency *** explore the versatility of processing the quantum microwave photonic signal by utilizing coincidence window selection on the biphoton coincidence *** demonstration includes finely tunable RF phase shifting,flexible multitap transversal filtering(with up to 14 taps),and photonically implemented RF mixing,leveraging the nonlocal RF mapping characteristic of *** accomplishments significantly enhance the capability of microwave photonic systems in processing ultraweak signals,opening up new possibilities for various applications.

关键词： microwave photonics quantum entanglement source window postselection

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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes

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Moore and More 2024年第1期1卷 1-9页

作者： Zhang, Xiaofei Wang, Lin Kong, Lingmei Wang, Sheng Dai, Jun Jia, Guohua Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Department of Physics Jiangsu University of Science and Technology Zhenjiang China School of Molecular and Life Sciences Curtin University Perth Australia Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai China

Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m−2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m−2), which is 7.4-fold longer than that for the control device.

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Demonstration of Spurious-Free and Low-Loss X-Band SAW Filter

Demonstration of Spurious-Free and Low-Loss X-Band SAW Filte...

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IEEE International Symposium on applications of Ferroelectrics (ISAF)

作者： Liping Zhang Shibin Zhang Mijing Sun Jinbo Wu Pengcheng Zheng Xiaoli Fang Dongchen Sui Xin Ou Shanghai Xin Ou Integration Technology Co. Ltd. China State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350371901

ISBN: (纸本)9798350371918

In this work, the authors explore the possibilities of scaling the shear horizontal surface acoustic wave (SH-SAW) resonators and filter to the X-band by designing the high-performance hetero-substrate. Through finite element simulation, high-velocity, low-loss and high-temperature stability LiTaO 3 /SiC hetero-substrate, and the interdigital transducers (IDT) are designed to achieve the high-frequency response and avoid the appearance of spurious modes. The series and shunt SH-SAW resonators operating at high frequencies up to 9~10 GHz exhibit decent coupling, quality factors of 500 and spurious-free responses. The fabricated SAW filter shows an ultra-high center frequency of 9.51 GHz, a 3-dB bandwidth of 424 MHz, an insertion loss of 1.92 dB, a spurious-free frequency response in the range of 1~11 GHz. The temperature coefficients of frequency of filter are also measured, exhibiting small frequency drift and stable frequency response of the passband. These high-performance SAW devices based on the LiTaO 3 /SiC hetero-substrate show great potential to develop the advanced communication systems.

关键词： Temperature measurement Q-factor Resonator filters Resonant frequency SAW filters Frequency response Frequency measurement Passband Resonators Frequency control

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Stable Soliton Microcomb Generation in X-cut Lithium Tantalate via Thermal-Assisted Photorefractive Suppression

arXiv

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arXiv 2025年

作者： Cai, Jiachen Wan, Shuai Chen, Bowen Li, Jin Wang, Xuqiang Sui, Dongchen Wang, Piyu Qu, Zhenyu Ke, Xinjian Zhu, Yifan Chen, Yang Xu, WenHui Yi, Ailun Zhang, Jiaxiang Wang, Chengli Dong, Chun-Hua Ou, Xin State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei230026 China

Chip-based soliton frequency microcombs combine compact size, broad bandwidth, and high coherence, presenting a promising solution for integrated optical telecommunications, precision sensing, and spectroscopy. Recent progress in ferroelectric thin films, particularly thin-film Lithium niobate (LiNbO3) and thin-film Lithium tantalate (LiTaO3), has significantly advanced electro-optic (EO) modulation and soliton microcombs generation, leveraging their strong third-order nonlinearity and high Pockels coefficients. However, achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena. These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation. Here, following the thermal-regulated carrier behaviour and auxiliary-laser-assisted approach, we propose a convenient mechanism to suppress both photorefractive and thermal dragging effect at once, and implement a facile method for soliton formation and its long-term stabilization in integrated X-cut LiTaO3 microresonators for the first time. The resulting mode-locked states exhibit robust stability against perturbations, enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality. Copyright © 2025, The Authors. All rights reserved.

关键词： Ferroelectric thin films

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