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arXiv 2025年

作者： Hu, Yue Bai, Xue Shi, Baoqi Sun, Jiahao Ding, Yafei Shang, Zhenyuan Feng, Hanke Zhou, Liping Yang, Bingcheng Kang, Shuting Chen, Yuan Li, Shuyi Long, Jinbao Shen, Chen Bo, Fang Ou, Xin Wang, Cheng Liu, Junqiu International Quantum Academy Shenzhen518048 China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen518055 China Department of Electrical Engineering State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Kowloon Hong Kong State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China MOE Key Laboratory of Weak-Light Nonlinear Photonics TEDA Applied Physics Institute School of Physics Nankai University Tianjin300457 China Qaleido Photonics Shenzhen518048 China Hefei National Laboratory University of Science and Technology of China Hefei230088 China

integrated photonics has revolutionized optical communication, sensing, and computation, offering miniaturized and lightweight solutions for spacecraft with limited size and payload. Novel chip-scale instruments based on ultralow-loss integrated photonic platforms, including lasers, frequency combs and atomic traps, have been developed for space applications. Therefore, quantifying the space compatibility of ultralow-loss photonic integrated circuits (PICs), particularly their radiation resistance, is critical. This study experimentally evaluates the radiation resistance of ultralow-loss Si3N4, 4H-SiC, and LiNbO3 PICs under intense γ-ray and high-energy proton irradiation. Results show that proton irradiation with 1.1 × 1010 p/cm2 total flux does not significantly increase optical loss or alter the refractive index of these PICs, while γ-ray irradiation with 1.2 Mrad accumulated dose only marginally increases their optical loss. These findings provide preliminary evidence of the excellent space compatibility of ultralow-loss Si3N4, 4H-SiC, and LiNbO3 PICs, highlighting their potential for compact and lightweight space systems. Copyright © 2025, The Authors. All rights reserved.

关键词： Gamma rays

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A Flat Plasmonic Biosensing Interface on Optical Fiber End-Facet via SPP-MIM Hybridization

arXiv

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arXiv 2024年

作者： He, Chenjia Sun, Xiaqing Zhong, Hao Meng, Qingfeng Zhou, Xuetong Liu, Sihang Zheng, Li Kong, Xiangyang Chen, Shengfu Tao, Shengce Yang, Tian State Key Laboratory of Advanced Optical Communication Systems and Networks Key Laboratory for Thin Film and Microfabrication the Ministry of Education School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai200240 China School of Material Science and Engineering Shanghai Jiao Tong University Shanghai200240 China State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Key Laboratory of Biomass Chemical Engineering College of Chemical and Biological Engineering Zhejiang University Hangzhou310027 China Shanghai Jiao Tong University Shanghai200240 China

We found that the specific dispersion of metal-insulator-metal (MIM) waveguide allows the hybridization of surface plasmon polaritons (SPPs) and the waveguide, which is not possible with dielectric waveguides. The SPP-MIM hybridization structure forms such a meta-film that integrates the previously incompatible respective merits of SPR and LSPR, including flat interfaces, high sensitivities, short evanescent fields and easy coupling with confined light. On the other hand, to achieve stable and reproducible performance is one of the greatest unresolved challenges for the development of nanophotonic biosensors. We point out that the key is to obtain well-controlled biomolecular behaviors using simple physical interfaces, for which the SPP-MIM meta-film provides a capable solution. We embed the SPP-MIM meta-film with a plasmonic crystal cavity and integrate it on a single-mode fiber's end-facet to detect biomolecular interactions. This device demonstrates highly reproducible sensorgrams and convincing detection of biotinylated proteins at down to 30 fM, with the sensorgrams following the Langmuir model. By unprecedentedly having both high sensitivity and high reproducibility, our device proposal provides a comprehensive solution for optical fiber-tip plasmonic devices to turn into a useful industrial biosensing technology. Copyright © 2024, The Authors. All rights reserved.

关键词： MIM devices

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Study of Monolithic Multiband SAW Filters for S-Band

Study of Monolithic Multiband SAW Filters for S-Band

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IEEE International Symposium on applications of Ferroelectrics (ISAF)

作者： Mijing Sun Liping Zhang Shibin Zhang Pengcheng Zheng Juxing He Xinjian Ke Kai Huang Xin Ou State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China School of Microelectronics University of Science and Technology of China Hefei China Shanghai Xin Ou Integration Technology Company Ltd. Shanghai China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350371901

ISBN: (纸本)9798350371918

In this work, a set of resonators covering the S-band (2-4 GHz) in frequency was prepared based on 42°YX LiTaO3/SiC substrates. The fabricated SH-SAW resonators operate in the S-band with high quality (Q) factors of 550–2114 and electromechanical coupling coefficients (K 2 ) of 8.30%–9.68%. Then, monolithic multiband filters with full S-band coverage were designed and prepared by adjusting IDT period of the resonators. All filters have the same electrode thickness (120 nm Al) and film thickness (510 nm) and are prepared using the same set of experimental procedures. The S-band filters show low insertion loss (IL) of 0.67–1.61 dB, 3-dB fractional bandwidth (FBW) of 3.71%–5.63%, and out-of-band (OoB) rejection larger than 28 dB. The frequency drifts of resonators and filters were also measured. The results show the excellent temperature stability of the fabricated devices. These demonstrated SAW devices with excellent comprehensive performances show the great potential of LiTaO3/SiC as the platform for future wireless communications.

关键词： Wireless communication Temperature measurement Q-factor Filters Resonant frequency Surface acoustic wave devices Frequency measurement Resonators Thermal stability Substrates

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integrated Triply Resonant Electro-Optic Frequency Comb in Lithium Tantalate

arXiv

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arXiv 2024年

作者： Zhang, Junyin Wang, Chengli Denney, Connor Lihachev, Grigory Hu, Jianqi Kao, Wil Blésin, Terence Kuznetsov, Nikolai Li, Zihan Churaev, Mikhail Ou, Xin Riemensberger, Johann Santamaria-Botello, Gabriel Kippenberg, Tobias J. LausanneCH-1015 Switzerland Center of Quantum Science and Engineering EPFL LausanneCH-1015 Switzerland Departement of Electrical Engineering Colorado School of Mines GoldenCO80401 United States State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Norwegian University of Science and Technology NTNU TrondheimNO-7491 Norway

integrated frequency comb generators based on Kerr parametric oscillation [1] have led to chip-scale, gigahertz-spaced combs with new applications spanning hyper-scale telecommunications, low-noise microwave synthesis, LiDAR and astrophysical spectrometer calibration [2–6]. Recent progress in lithium niobate (LiNbO3) photonic integrated circuits (PICs) has resulted in chip-scale electro-optic (EO) frequency combs [7, 8], offering precise comb-line positioning and simple operation without relying on the formation of dissipative Kerr solitons. However, current integrated EO combs face limited spectral coverage due to the large microwave power required to drive the non-resonant capacitive electrodes and the strong intrinsic birefringence of LiNbO3. Here, we overcome both challenges with an integrated triply resonant architecture, combining monolithic microwave integrated circuits (MMICs) with PICs based on the recently emerged thin-film lithium tantalate (LiTaO3) [9]. With resonantly enhanced EO interaction and reduced birefringence in LiTaO3, we achieve a four-fold comb span extension and a 16-fold power reduction compared to the conventional non-resonant microwave design. Driven by a hybrid-integrated laser diode, the comb spans over 450 nm (> 60 THz) with > 2000 lines, and the generator fits within a compact 1 cm2 footprint. We additionally observe that the strong EO coupling leads to an increased comb existence range approaching the full free spectral range of the optical microresonator. The ultra-broadband comb generator, combined with detuning-agnostic operation, could advance chip-scale spectrometry and ultra-low-noise millimeter wave synthesis [10–13] and unlock octave-spanning EO combs. The methodology of co-designing microwave and optical resonators can be extended to a wide range of integrated electro-optics applications [14–16]. Copyright © 2024, The Authors. All rights reserved.

关键词： Lithium tantalate

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Dynamic bifunctional THz metasurface via dual-mode decoupling

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Photonics Research 2022年第9期10卷 2008-2014页

作者： XUAN CONG HONGXIN ZENG SHIQI WANG QIWU SHI SHIXIONG LIANG JIANDONG SUN SEN GONG FENG LAN ZIQIANG YANG YAXIN ZHANG Terahertz Science and Technology Research Center University of Electronic Science and Technology of ChinaChengdu 610000China College of Materials Science and Engineering Sichuan UniversityChengdu 610065China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Yangtze Delta Region Institute(HuZhou) University of Electronic Science and Technology of ChinaHuzhou 313001China

Metasurfaces have powerful light field manipulation capabilities and have been researched and developed extensively in various *** an increasing demand for diverse functionalities,terahertz(THz)metasurfaces are also expanding their *** particular,integrating different functionalities into a single device is a compelling domain in *** this work,we demonstrate a functionally decoupled THz metasurface that can incorporate any two functions into one metasurface and switch dynamically through external *** proposed metasurface is formed by the combination of split-ring resonators and phase change material vanadium dioxide(VO_(2)).It operates in the single-ring resonant mode and double-ring resonant mode with varying VO_(2)in insulating and metallic states,*** importantly,the phase modulation is independent in two operating modes,and both cover a 360°cross-polarized phase with efficient polarization *** characteristic makes it obtain arbitrary independent phase information on the metasurface with different modes to switch dual functions ***,we experimentally demonstrate the functions of a tunable focal length and large-angle focus deflection of a THz off-axis parabolic mirror to verify the dual-function switching characteristics of the functionally decoupled *** functionally decoupled metasurface developed in this work broadens the way for the research and application of multifunctional modulation devices in the THz band.

关键词： surface. functional resonant

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Spurious Free SAW Resonators on LiNbO3/SiO2/ Quartz Substrate for Wideband Application

Spurious Free SAW Resonators on LiNbO3/SiO2/ Quartz Substrat...

引用

IEEE International Frequency Control Symposium

作者： Yang Chen Jinbo Wu Xiaomeng Zhao Xinjian Ke Shibin Zhang Pengcheng Zheng Kai Huang Xin Ou National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China School of Information Science and Technology (SIST) ShanghaiTech University Shanghai People’s Republic of China

SummaryIn this work, the LiNbO 3 /SiO 2 /Quartz substrate (LiNbO 3 -on-quartz, LNOQ) was fabricated in wafer scale using ion-cut process. 3D finite element analysis was used to design this structure. The 36°YX quartz was chosen to achieve good confinement of acoustic energy. The 42°YX LN was chosen to get large electromechanical coupling coefficient (k 2 ) and suppress the Rayleigh mode. The 4-inch LNOQ wafer shows high film thickness uniformity of 597.8 nm ±1.8%. The fabricated shear horizontal surface acoustic wave (SH-SAW) resonator shows large k 2 of 28.1% and high-quality factor of 959, thanks to the good confinement of acoustic energy and low RF loss of quartz. Besides, the resonators show clean out of band response due to the moderate acoustic velocity of quartz.

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Miniaturized Dual-Mode SAW Filters using 6-inch LiNbO3-on-SiC for 5GNR and WiFi 6

Miniaturized Dual-Mode SAW Filters using 6-inch LiNbO3-on-Si...

引用

International Electron Devices Meeting (IEDM)

作者： Pengcheng Zheng Shibin Zhang Jin-Xu Xu Xiaoli Fang Yang Chen Kai Huang Dongchen Sui Xiuyin Zhang Xin Ou National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China School of Microelectronics South China University of Technology Guangzhou China

In this work, low-loss and wide-band surface acoustic wave (SAW) filters in the frequency range of 3.3 to 6.3 GHz were demonstrated on 6-inch X-cut LiNbO 3 -on-SiC substrate fabricated by the ion-slicing process. Further, the SAW filter with n77 and n79 dual-band response or n79 and WiFi 6 dual-band response was demonstrated for the first time in a compact footprint of < 1 mm 2 , respectively. The shear horizontal (SH) and longitudinal leaky (LL) dual-mode excitation as well as their preferred in-plane orientations are analyzed using the finite element method. The fabricated SH-SAW filter aiming at the n77 band shows a large 3-dB bandwidth (BW) of 495 MHz and a low insertion loss (IL) of 0.85 dB. The LL-SAW filters aiming at WiFi 6 band feature scalable center frequencies (f c ) from 5.34 to 6.1 GHz, 3-dB BWs between 330 and 402 MHz, and ILs between 1.32 and 1.74 dB. All devices, including the dual-band filters, share the same two-step manufacturing process and the device wavelengths (λ) are above 1.0 µm. This dual-mode SAW technology using LiNbO 3 -on-SiC shows the strong potential for miniaturized and low-cost front-ends in 5G and WiFi 6 bands.

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Wms-Based Near-Infrared On-Chip Acetylene Sensor Using Polymeric Su8 Archimedean Spiral Waveguide with Euler S-Bend

SSRN

引用

SSRN 2023年

作者： Zhao, Huan Zheng, Chuantao Pi, Mingquan Liang, Lei Song, Fang Zhang, Yu Wang, Yiding Tittel, Frank K. State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun130012 China State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun130033 China Department of Electrical and Computer Engineering Rice University 6100 Main Street HoustonTX77005 United States

Polymeric SU8 waveguide is suitable for large-scale fabrication due to its simple fabrication process and low cost, but it has never been employed for on-chip gas measurement based on infrared absorption. A near-infrared on-chip acetylene (C2H2) sensor using SU8 polymer spiral waveguide was proposed, and the sensing performances based on wavelength modulation spectroscopy (WMS) was verified experimentally for the first time to our knowledge. The proposed Euler-S bend and Archimedean spiral SU8 waveguide reduces the sensor size by more than a half. By virtue of WMS technique, the C2H2 sensing performances of a 7.4cm- and a 13cm-long SU8 waveguide were derived at 1532.83 nm, and the obtained limit of detection (LoD) are 2197.1 and 425.5 parts-per-million (ppm) with an averaging time of 0.2 s, respectively. The experimentally obtained optical power confinement factor (PCF) is 0.0172, which is close to the simulated value of 0.016, and the measured waveguide loss is 3 dB/cm. The rise time and fall time are ~ 2.05 s and ~ 3.27 s, respectively. This work proves that SU8 waveguide has the potential of high-performance on-chip gas sensing in the near-infrared waveband. © 2023, The Authors. All rights reserved.

关键词： Infrared devices

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P-151: The Optimization of Quantum-Dots Color Filter for Flexible Display applications

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SID Symposium Digest of Technical Papers 2024年第1期55卷 1965-1967页

作者： Bingxin Zhao Depeng Li Junjie Hao Shang Li Xue Bai Xiao Wei Sun The Theory Tech. Co. Ltd. Baoan Shenzhen China Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen China Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology) Ministry of Education Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices and Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen China College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen China

This paper introduces a flexible and uniformly-dispersed quantum dot (QD) color filter (QDCF) fabricated for micro-LED by photolithography. We studied the condition of PET films and concentration of QDs, the optimized QDCF exhibited high quantum yield (QY) up to over 70%, and a high optical density (OD) over 1.2. The QY increased and then decreased with the increase of the concentration.

关键词： Quantum dot color filter micro-LED

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Boosting flexible electronics with integration of two-dimensional materials

引用

InfoMat 2024年第7期6卷 1-50页

作者： Chongyang Hou Shuye Zhang Rui Liu Thomas Gemming Alicja Bachmatiuk Hongbin Zhao Hao Jia Shirong Huang Weijia Zhou Jian-Bin Xu Jinbo Pang Mark HRümmeli Jinshun Bi Hong Liu Gianaurelio Cuniberti Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinanthe People’s Republic of China State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyHarbinthe People’s Republic of China State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People’s Republic of China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)DresdenGermany Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentWroclawPoland State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijingthe People’s Republic of China Institute for Materials Science and Max Bergmann Center of Biomaterials TUD Dresden University of TechnologyDresdenGermany Department of Electronic Engineering The Chinese University of Hong KongHong Kong SARthe People’s Republic of China Institute of Environmental Technology VSB-Technical University of OstravaOstravaCzech Republic College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhouthe People’s Republic of China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhouthe People’s Republic of China Centre of Polymer and Carbon Materials Polish Academy of SciencesZabrzePoland School of Integrated Circuits University of Chinese Academy of SciencesBeijingthe People’s Republic of China Institute of Microelectronics of Tianjin Binhai New Area Tianjinthe People’s Republic of China Institute of Microelectronics Chinese Academy of SciencesBeijingthe People’s Republic of China State Key Laboratory of Crystal Materials Center of Bio and Micro/Nano Functional MaterialsShandong UniversityJinanthe People’s Republic of China

Flexible electronics has emerged as a continuously growing field of ***-dimensional(2D)materials often act as conductors and electrodes in elec-tronic devices,holding significant promise in the design of high-performance,flexible *** studies have focused on harnessing the potential of these materials for the development of such ***,to date,the incorporation of 2D materials in flexible electronics has rarely been summa-rized or ***,there is an urgent need to develop compre-hensive reviews for rapid updates on this evolving *** review covers progress in complex material architectures based on 2D materials,including interfaces,heterostructures,and 2D/polymer ***-ally,it explores flexible and wearable energy storage and conversion,display and touch technologies,and biomedical applications,together with integrated design *** the pursuit of high-performance and high-sensitivity instruments remains a primary objective,the integrated design of flexible electronics with 2D materials also warrants *** combin-ing multiple functionalities into a singular device,augmented by machine learning and algorithms,we can potentially surpass the performance of existing wearable ***,we briefly discuss the future trajectory of this burgeoning *** review discusses the recent advancements in flex-ible sensors made from 2D materials and their applications in integrated archi-tecture and device design.

关键词： 2D materials biomedical healthcare energy storage and conversion flexible electronics heterostructures sensors

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