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Asymmetrically Contacted Tellurium Short-Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

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Advanced Optical Materials 2023年第23期11卷

作者： Wang, Huide Huang, Haoxin Zha, Jiajia Xia, Yunpeng Yang, Peng Zeng, Yonghong Liu, Yi Cao, Rui Wang, Bing Wang, Wei Zheng, Long Chen, Ye He, Qiyuan Chen, Xing Jiang, Ke Lin, Ja-Hon Shi, Zhe Ho, Johnny C. Zhang, Han Tan, Chaoliang Department of Materials Science and Engineering City University of Hong Kong 9990777 Hong Kong International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Department of Electrical Engineering City University of Hong Kong 999077 Hong Kong College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen518118 China Department of Chemistry The Chinese University of Hong Kong 999077 Hong Kong College of Mathematics and Physics Chengdu University of Technology Chengdu610041 China State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun130033 China Advanced Nanophotonics Technology Laboratory Department of Electro-Optical Engineering National Taipei University of Technology Taipei10608 Taiwan School of Physics & New Energy Xuzhou University of Technology Xuzhou221018 China Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road 999077 Hong Kong

Large dark current at room temperature has long been the major bottleneck that impedes the development of high-performance infrared photodetectors toward miniaturization and integration. Although infrared photodetectors based on layered 2D narrow bandgap semiconductors have shown admirable advantages compared with those based on conventional compounds, which typically suffer from the expensive cryogenic operation, it is still urgent to develop a simple but effective strategy to further reduce the dark current. Herein, a tellurium (Te)-based infrared photodetector is reported with specifically designed asymmetric electrical contact area. The deliberately introduced asymmetric electrical contact raises the electric field intensity difference in the Te channel near the drain and the source electrodes, resulting in the spontaneous asymmetric carrier diffusion under global infrared light illumination under zero bias. Specifically, the Te-based photodetector presents promising detector performance at room temperature including a low dark current of ≈1 nA, an ultrahigh photocurrent/dark current ratio of 1.57 × 104, a high specific detectivity (D*) of 3.24 × 109 Jones, and a relatively fast response speed of ≈720 µs at zero bias. The results prove that the simple design of asymmetric electrical contact areas can provide a promising solution to high-performance 2D semiconductor-based infrared photodetectors working at room temperature. © 2023 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH.

关键词： Dark currents

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Thin Film Lithium Niobate Electro-optic Isolator Fabricated by photolithography assisted chemo-mechanical etching (PLACE)

arXiv

引用

arXiv 2023年

作者： Gao, Lang Liang, Youting Song, Lvbin Yin, Difeng Qi, Jia Chen, Jinming Liu, Zhaoxiang Yu, Jianping Liu, Jian Zhang, Haisu Fang, Zhiwei Qi, Hongxin Cheng, Ya Shanghai201800 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China School of Physics and Electronic Science East China Normal University Shanghai200241 China State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai200062 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal University Jinan250358 China Hefei National Laboratory Hefei230088 China Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University Shandong Normal University East China Normal University Shanghai200241 China

We report a thin-film lithium niobate electro-optic isolator fabricated by photolithography-assisted chemo-mechanical etching in this work. The device demonstrates 39.50 dB isolation when subjected to a 24 GHz microwave of 25.5 dBm on its electrodes. The measured isolation remains consistently above 30 dB within the 1510 nm to 1600 nm wavelength range. The overall device insertion loss, specifically the fiber-to-fiber insert loss, has been measured to be 2.6 dB, which is attributed to our highly efficient spot size converter and the low propagation loss observed in the fabricated waveguides. Copyright © 2023, The Authors. All rights reserved.

关键词： Fabrication

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integrated electro-optically tunable narrow-linewidth III-V laser

arXiv

引用

arXiv 2023年

作者： Zhu, Yiran Yu, Shupeng Fang, Zhiwei Yin, Difeng Liu, Jian Wang, Zhe Zhou, Yuan Ma, Yu Zhang, Haisu Wang, Min Cheng, And Ya State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai200062 China School of Physics and Electronic Science East China Normal University Shanghai200241 China Shanghai201800 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal University Jinan250358 China Hefei National Laboratory Hefei230088 China Joint Research Center of Light Manipulation Science Photonic Integrated Chip of East China Normal University Shandong Normal University East China Normal University Shanghai200241 China

We demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser with an output power of 738.8 μW and an intrinsic linewidth of 45.55 kHz at the C band. The laser cavity is constructed using a fiber Bragg grating (FBG) and a tunable Sagnac loop reflector (TSLR) fabricated on thin film lithium niobate (TFLN). The combination of the FBG and the electro-optically tunable TSLR offers the advantages of single spatial mode, single-frequency, narrow-linewidth, and wide wavelength tunability for the electrically pumped hybrid integrated laser, which features a frequency tuning range of 20 GHz and a tuning efficiency of 0.8 GHz/V. Copyright © 2023, The Authors. All rights reserved.

关键词： Fiber Bragg gratings

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The 2D Materials Roadmap

arXiv

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arXiv 2025年

作者： Ren, Wencai Bøggild, Peter Redwing, Joan Marie Novoselov, Kostya Sun, Luzhao Qi, Yue Jia, Kaicheng Liu, Zhongfan Burton, Oliver Alexander-Webber, Jack Hofmann, Stephan Cao, Yang Long, Yu Yang, Quan-Hong Li, Dan Choi, Soo Ho Kim, Ki Kang Lee, Young Hee Li, Mian Huang, Qing Gogotsi, Yury Clark, Nicholas Carl, Amy Gorbachev, Roman Olsen, Thomas Rosen, Johanna Thygesen, Kristian Sommer Efetov, Dmitri K. Jessen, Bjarke S. Yankowitz, Matthew Barrier, Julien Kumar, Roshan Krishna Koppens, Frank H.L. Deng, Hui Li, Xiaoqin Dai, Siyuan Basov, D.N. Wang, Xinran Das, Saptarshi Duan, Xiangfeng Yu, Zhihao Borsch, Markus Ferrari, Andrea C. Huber, Rupert Kira, Mackillo Xia, Fengnian Wang, Xiao Wu, Zhong-Shuai Feng, Xinliang Simon, Patrice Cheng, Hui-Ming Liu, Bilu Xie, Yi Jin, Wanqin Nair, Rahul Raveendran Xu, Yan Zhang, Qing Katiyar, Ajit K. Ahn, Jong-Hyun Aharonovich, Igor Hersam, Mark C. Roche, Stephan Hua, Qilin Shen, Guozhen Ren, Tianling Zhang, Hao-Bin Koo, Chong Min Koratkar, Nikhil Pellegrini, Vittorio Young, Robert J. Qu, Bill Lemme, Max Pollard, Andrew J. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang110016 China Technical University of Denmark Denmark The Pennsylvania State University United States University of Manchester United Kingdom Institute for Functional Intelligent Materials National University of Singapore Singapore Beijing Graphene Institute China University of Cambridge United Kingdom Department of Chemical Engineering The University of Melbourne Victoria Australia Nanoyang Group Tianjin Key Laboratory of Advanced Carbon and Electrochemical Energy Storage School of Chemical Engineering and Technology Tianjin University Tianjin300072 China The Hong Kong University of Science and Technology Hong Kong Center for Integrated Nanostructure Physics Institute for Basic Science Suwon16419 Korea Republic of Sungkyunkwan University Suwon16419 Korea Republic of Zhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences China Drexel University United States Linköping University Sweden Ludwig-Maximilians-Universität München Germany University of Washington United States ICFO The Institute of Photonic Sciences Castelldefels Barcelona08860 Spain University of Michigan United States University of Texas Austin United States Auburn University United States Columbia University United States State Key Laboratory of Catalysis Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian China University of California Los Angeles United States Suzhou Laboratory Suzhou China School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Department of Electrical Engineering and Computer Science University of Michigan Ann ArborMI United States University of Regensburg Germany Department of Electrical and Computer Engineering Yale University New Have

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials. © 2025, CC BY.

关键词： integrated optoelectronics

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Joint Constraints on the Hubble Constant, Spatial Curvature, and Sound Horizon from the Late-time Universe with Cosmography

arXiv

引用

arXiv 2023年

作者： Zhang, Kaituo Zhou, Tianyao Xu, Bing Huang, Qihong Yuan, Yangsheng Department of Physics Anhui Normal University Anhui Wuhu241000 China School of Electrical and Electronic Engineering Anhui Science and Technology University Anhui Bengbu233030 China School of Physics and Electronic Science Zunyi Normal University Guizhou Zunyi563006 China Shandong Provincial Engineering and Technical Center of Light Manipulations Shandong Provincial Key Laboratory of Optics and Photonic Device School of Physics and Electronics Shandong Normal University Jinan250014 China Collaborative Innovation Center of Light Manipulation and Applications Shandong Normal University Jinan250358 China Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University Shandong Normal University East China Normal University Shanghai200241 China

In this paper, using the latest Pantheon+ sample of Type Ia supernovae (SNe Ia), Baryon Acoustic Oscillation (BAO) measurements, and observational Hubble data (OHD), we carry out a joint constraint on the Hubble constant H0, the spatial curvature ΩK, and the sound horizon at the end of drag epoch rd. To be model-independent, four cosmography models, i.e., the Taylor series in terms of redshift y1 = z/(1 + z), y2 = arctan(z), y3 = ln(1 + z), and the Padé approximants, are used without the assumption of flat Universe. The results show that the H0 is anti-correlated with ΩK and rd, indicating smaller ΩK or rd would be helpful in alleviating the Hubble tension. And the values of H0 and rd are consistent with the estimate derived from the Planck Cosmic Microwave Background (CMB) data based on the flat ΛCDM model, but H0 is in 2.3∼3.0σ tension with that obtained by Riess et al. (2022) in all these cosmographic approaches. Meanwhile, a flat Universe is preferred by the present observations under all approximations except the third order of y1 and y2 of the Taylor series. Furthermore, according to the values of the Bayesian evidence, we found that the flat ΛCDM remains to be the most favored model by the joint datasets, and the Padé approximant of order (2,2), the third order of y3 and y1 are the top three cosmographic expansions that fit the datasets best, while the Taylor series in terms of y2 are essentially ruled out. Copyright © 2023, The Authors. All rights reserved.

关键词： Taylor series

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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

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science China Materials 2020年第6期63卷 1065-1075页

作者： Shike Hu Jing Li Xiaoyi Zhan Shuang Wang Longbiao Lei Yijian Liang He Kang Yanhui Zhang Zhiying Chen Yanping Sui Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

This study reports the growth of aligned monolayer molybdenum disulfide(MoS2)ribbons on a sapphire substrate via NaOH-assisted chemical vapor *** length of MoS2 ribbon is up to 400μ*** MoS2 ribbon has excellent single crystal properties,a carrier mobility of^150 cm^2V^-1s^-1,and a optical response of 103 mA W^-1 at a wavelength of 550 *** growth model of MoS2 ribbons was *** reacts with MoO3 to form sodium molybdate droplets,which increase the fluidity of the molybdenum source on the substrate,realizing the vapor-liquid-solid growth of MoS2 on *** monolayer MoS2 ribbons have two kinds of arrangements on the sapphire substrate,one is the oriented growth affected by the interlayer van der Waals force and the lattice,and the other is the aligned growth constrained by the sapphire *** results promote the basic research and device applications of MoS2,and introduce a new way of synthesizing other one dimensional(1D)and 2D nanostructures.

关键词： MoS2 aligned ribbons vapor-liquid-solid step epitaxy

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Dynamics and Resonance Fluorescence from a Superconducting Artificial Atom Doubly Driven by Quantized and Classical Fields

arXiv

引用

arXiv 2024年

作者： Ruan, Xinhui Wang, Jia-Heng He, Dong Song, Pengtao Li, Shengyong Zhao, Qianchuan Kuang, L.M. Tsai, Jaw-Shen Zou, Chang-Ling Zhang, Jing Zheng, Dongning Astafiev, O.V. Liu, Yu-Xi Peng, Zhihui Department of Automation Tsinghua University Beijing100084 China Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Department of Physics and Synergetic Innovation Center of Quantum Effects and Applications Hunan Normal University Changsha410081 China School of Integrated Circuits Tsinghua University Beijing100084 China Institute of Physics Chinese Academy of Sciences Beijing100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing100190 China Center for Quantum Computing RIKEN Saitama351-0198 Japan Graduate School of Science Tokyo University of Science 1-3 Kagurazaka Shinjuku Tokyo162-0825 Japan CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui230026 China Hefei National Laboratory Hefei230088 China School of Automation Science and Engineering Xi'an Jiaotong University Xi’an710049 China MOE Key Lab for Intelligent Networks and Network Security Xi'an Jiaotong University Xi’an710049 China Skolkovo Institute of Science and Technology Nobel str. 3 Moscow143026 Russia Moscow Institute of Physics and Technology Institutskiy Pereulok 9 Dolgoprudny141701 Russia Royal Holloway University of London Surrey EghamTW20 0EX United Kingdom

We report an experimental demonstration of resonance fluorescence in a two-level superconducting artificial atom under two driving fields coupled to a detuned cavity. One of the fields is classical and the other is varied from quantum (vacuum fluctuations) to classical one by controlling the photon number inside the cavity. The device consists of a transmon qubit strongly coupled to a one-dimensional transmission line and a coplanar waveguide resonator. We observe a sideband anti-crossing and asymmetry in the emission spectra of the system through a one-dimensional transmission line, which is fundamentally different from the weak coupling case. By changing the photon number inside the cavity, the emission spectrum of our doubly driven system approaches to the case when the atom is driven by two classical bichromatic fields. We also measure the dynamical evolution of the system through the transmission line and study the properties of the first-order correlation function, Rabi oscillations and energy relaxation in the system. The study of resonance fluorescence from an atom driven by two fields promotes understanding decoherence in superconducting quantum circuits and may find applications in superconducting quantum computing and quantum networks. Copyright © 2024, The Authors. All rights reserved.

关键词： Electric lines

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Ultra-high Q lithium niobate microring monolithically fabricated by photolithography assisted chemo-mechanical etching

arXiv

引用

arXiv 2023年

作者： Li, Chuntao Guan, Jianglin Lin, Jintian Gao, Renhong Wang, Min Qiao, Lingling Deng, Li Cheng, Ya State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai200062 China School of Physics and Electronic Science East China Normal University Shanghai200241 China Shanghai201800 China Engineering Research Center for Nanophotonics & Advanced Instrument Ministry of Education School of Physics and Electronic Science East China Normal University Shanghai200241 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal University Jinan250358 China Shanghai Research Center for Quantum Sciences Shanghai201315 China Joint Research Center of Light Manipulation Science and Photonic Integrated Chip East China Normal University Shanghai200241 China

Thin-film lithium niobate (TFLN) has been considered as one of the most important platforms for constructing high-performance photonic integrated devices such as electro-optic modulators, frequency combs, classical/quantum light sources, and large-scale photonic integrated circuits, benefiting from its excellent optical properties of TFLN. The fabrication quality of TFLN photonic integrated devices plays an important role in the performance and the integration scale of these devices. As one of the element photonic structures, the state-of-the-art TFLN microrings reach an intrinsic Q factor higher than 107 with ultra-smooth sidewalls, fabricated by photolithography assisted chemo-mechanical etching (PLACE). However, it is isolated on the chip surface and a tapered fiber is required to couple the light into and out of the resonator. Furthermore, it is difficult to maintain such high-Q factors when the microrings are monolithically integrated with bus waveguides by PLACE, resulted from large coupling loss with biggish coupling gap. Here, a relatively narrow gap of an ultra-high Q microring monolithically integrated with the bus-waveguide is achieved with 3.8 μm by optimizing PLACE process, and a high temperature annealing is carried out to improve the loaded (intrinsic) Q factor with 4.29×106 (4.04×107), leading an ultra-low propagation loss of less than 1 dB/m, which is approximately 3 times better than the best values previously reported in ion-slicing TFLN platform. © 2023, CC BY.

关键词： Light sources

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Enhanced Static and Dynamic Performance for GaN-Based VCSELs with ITO/p-GaN Resistive Current Injection Structure

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IEEE Journal of Quantum Electronics 2025年

作者： Tian, Kangkai Tang, Jingyu Chu, Chunshuang Huang, Fuping Zhang, Yonghui Sun, Xiao Wei Zhang, Zi-Hui Guangdong University of Technology School of Integrated Circuits Panyu Guangzhou510006 China Hebei University of Technology State Key Laboratory of Reliability and Intelligence of Electrical Equipment School of Electronics and Information Engineering Beichen Tianjin300401 China Southern University of Science and Technology Institute of Nanoscience and Applications Department of Electrical and Electronic Engineering Shenzhen518055 China

In this study, we develop advanced numerical models to comprehensively investigate the static and dynamic performances for GaN-based vertical cavity surface emitting lasers (VCSELs) with optimized current injection efficiency. We propose using indium tin oxide (ITO) instead of SiO2 as the current confinement layer. The ITO/p-GaN forms a resistive junction, which improves hole injection efficiency and suppresses the hole leakage out of the aperture for GaN-based VCSELs. The ITO/p-GaN design eliminates the capacitance arising from the SiO2, and the VCSELs can be stabilized within a reduced time upon being turned on. We have also found that the defects on the recessed p-GaN region have significant impact on the static and dynamic characteristics for the proposed VCSELs, such that the surface defects generate charging/discharging processes. This may cause very significant laser power oscillation before the device is stabilized. As a result, we investigate the impact of defect density and defect energy levels on the device performances. We find that, besides decreasing the defect density, defects with shallow energy level may also have strong impact on delaying the device stabilization process. In order to suppress the defect-induced capturing effect for injected holes, we then design u-AlGaN/p-GaN/u-AlGaN/p-GaN so that the hetero-junctions can spread the current into the aperture center. This favors the hole to be apart from the surface defects, which enables the increased hole injection. Therefore, the designed VCSELs will reduce the oscillation duration before reaching the stabilized on-state. © 1965-2012 IEEE.

关键词： Defect density

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Carbon Superstructure-Supported Half-Metallic V2O3Nanospheres for High-Efficiency Photorechargeable Zinc Ion Batteries

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Angewandte Chemie 2024年第38期136卷

作者： Dr. Yingying Zhao Tianqi He Jinhang Li Prof. Chunling Zhu Yujie Tan Dr. Kai Zhu Prof. Shulei Chou Prof. Yujin Chen Key Laboratory of In-Fiber Integrated Optics (Ministry of Education) College of Physics and Optoelectronic Engineering Harbin Engineering University Harbin 150001 China Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications (Ministry of Industry and Information Technology of China) College of Physics and Optoelectronic Engineering Harbin Engineering University Harbin 150001 China Laboratory of Superlight Materials and Surface Technology (Ministry of Education) College of Materials Science and Chemical Engineering Harbin Engineering University Harbin 150001 China Institute for Carbon Neutralization College of Chemistry and Materials Engineering Wenzhou University Wenzhou Zhejiang 325035 China

Photorechargeable zinc ion batteries (PZIBs), which can directly harvest and store solar energy, are promising technologies for the development of a renewable energy society. However, the incompatibility requirement between narrow band gap and wide coverage has raised severe challenges for high-efficiency dual-functional photocathodes. Herein, half-metallic vanadium (III) oxide (V 2 O 3 ) was first reported as a dual-functional photocathode for PZIBs. Theoretical and experimental results revealed its unique photoelectrical and zinc ion storage properties for capturing and storing solar energy. To this end, a synergistic protective etching strategy was developed to construct carbon superstructure-supported V 2 O 3 nanospheres (V 2 O 3 @CSs). The half-metallic characteristics of V 2 O 3 , combined with the three-dimensional superstructure assembled by ultrathin carbon nanosheets, established rapid charge transfer networks and robust framework for efficient and stable solar-energy storage. Consequently, the V 2 O 3 @CSs photocathode delivered record zinc ion storage properties, including a photo-assisted discharge capacities of 463 mA ⋅ h ⋅ g −1 at 2.0 A ⋅ g −1 and long-term cycling stability over 3000 cycles. Notably, the PZIBs assembled using V 2 O 3 @CSs photocathodes could be photorecharged without an external circuit, exhibiting a high photo conversion efficiency (0.354 %) and photorecharge voltage (1.0 V). This study offered a promising direction for the direct capture and storage of solar energy.

关键词： Half-Metallic V2O3 Dual-Functional Photocathode Photorechargeable Zinc Ion Batteries Carbon Superstructure Photo-Generated Carriers

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