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Metal Halide Perovskite-Gated Organic Phototransistors for Efficient UV/DUV Detection

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Advanced materials (Deerfield Beach, Fla.) 2025年 e2500477页

作者： Jiangnan Xia Jiakun Xue Ping-An Chen Yu Liu Huan Wei Jiaqi Ding Yu Zhang Chengyuan Peng Zhenqi Gong Wenpei Shi Abd Rashid Bin Mohd Yusoff Yunfeng Deng Huajie Chen Lang Jiang Lei Liao Yuanyuan Hu Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China. National Key Laboratory of Power Semiconductor and Integration Technology Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China. Shenzhen Research Institute of Hunan University Shenzhen 518063 China. Department of Physics Faculty of Science Universiti Teknologi Malaysia Johor Bahru 81310 Malaysia. School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science Tianjin University Tianjin 300072 China. Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education College of Chemistry Xiangtan University Xiangtan 411105 China. College of Chemical Engineering Hebei University of Technology Tianjin 300401 China.

Conventional UV/DUV phototransistors, which rely on wide-bandgap semiconductor channels, encounter issues with material availability, processing complexity, and performance tunability. Perovskite-gated phototransistors (PGPTs) are introduced that decouple photoresponse and charge transport by using wide-bandgap metal halide perovskites (MHPs) as dielectric layers and non-wide-bandgap semiconductors as channels. This design offers material flexibility, simplified processing, and enhanced performance. Using the 2D Ruddlesden-Popper perovskite PEAPbBr (E = 3.0 eV) as the dielectric layer and the organic semiconductor (OSC) P3HT as the channel layer, UV phototransistors are successfully achieved with exceptional photodetection performance at operating voltages below 2 V, exhibiting a responsivity of 1960 mA W, a specific detectivity of 3 × 10 Jones, and a response time of ≈20 ms. Fabricated via low-temperature (≤100 °C) solution processing, this approach facilitates scalable production and is adaptable to various OSCs and other wide-bandgap MHP dielectrics, such as PEAPbCl (E = 3.6 eV) and PEASnI (E = 3.8 eV), extending their potential for DUV detection. As a proof-of-concept, an optical decoder for telecommunications is demonstrated using DUV PEAPbCl/PDVT-10 PGPTs, which are immune to ambient light interference. Additionally, these DUV phototransistors show potential for latent fingerprint detection due to their sensitivity to skin absorption characteristics.

关键词： DUV detection metal halide perovskite organic semiconductor phototransistor

Giant moiré trapping of excitons in twisted hBN

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arXiv 2021年

作者： Li, Yanshuang Xie, Xiuhua Zeng, Huan Li, Binghui Zhang, Zhenzhong Wang, Shuangpeng Liu, Jishan Shen, Dezhen State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences No. 3888 Dongnanhu Road Changchun130033 China University of Chinese Academy of Sciences Beijing100049 China School of Microelectronics Dalian University of Technology Dalian116024 China MOE Joint Key Laboratory Institute of Applied Physics and Materials Engineering Department of Physics and Chemistry Faculty of Science and Technology University of Macau 999078 China Center for Excellence in Superconducting Electronics State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Excitons in van der Waals (vdW) stacking interfaces can be trapped in ordered moiré potential arrays giving rise to attractive phenomenons of quantum optics and bosonic many-body effects. Compare to the prevalent transition metal dichalcogenides (TMDs) systems, due to the wide bandgap and low dielectric constant, excitons in twist-stacked hexagonal boron nitride (hBN) are anticipated trapped in deeper moiré potential, which enhances the strength of interactions. However, constrained by the common low detectivity of weak light-emitting in the deep-ultraviolet (DUV) bands, the moire excitons in twist-hBN remain elusive. Here, we report that a remarkable DUV emitting band (peak located at ~260 nm) only emerges at the twisted stacking area of hBN, which is performed by a high collection efficiency and spatially-resolved cathodoluminescence (CL) at room temperature. Significant peak redshifting contrast to defect-bound excitons of bulk hBN indicates the giant trapping effects of moiré potential for excitons. The observation of deeply trapped excitons motivates further studies of bosonic strongly correlation physics based on the twist-hBN system. Copyright © 2021, The Authors. All rights reserved.

关键词： III-V semiconductors

Research on Pre-view Method of Safety Level of Cascading Trip for Power Grid 6th

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Research on Pre-view Method of Safety Level of Cascading Tri...

6th International Conference on Advanced Machine Learning Technologies and applications, AMLTA 2021

作者： Deng, Huiqiong Li, Qinbin Zheng, Rongjin Li, Peiqiang Chang, Kuo-Chi School of Information Science and Engineering Fujian University of Technology No. 3 Xueyuan Road University Town Minhou Fuzhou Fujian350118 China Fujian Provincial University Engineering Research Center of Smart Grid Simulation Analysis and Integrated Control Fuzhou Fujian350118 China Fujian Provincial Key Laboratory of Big Data Mining and Applications Fujian University of Technology No. 3 Xueyuan Road University Town Minhou Fuzhou Fujian350118 China College of Mechanical & Electrical Engineering National Taipei University of Technology No. 1 Section 3 Zhongxiao East Road Taipei10608 Taiwan Department of Business Administration North Borneo University College Lot 47 Block-F Alamesra Permai Plaza 2 Jln Sulaman Kota Kinabalu Sabah88400 Malaysia

ISBN: (纸本)9783030697167

This article introduces a method by which the power grid's security level can be observed in advance based on the expected initial failure. Firstly, based on the general form of cascading trip, this paper gives a mathematical expression of grid tripping based on cascading trip relay protection action behavior. According to the mathematical expression, the relationship between grid tripping and grid node injection power is discussed. According to this relationship, the distance between the node injection power under the current operation state and the nearest critical state node injection power is taken as the index to measure the power grid's security for cascading trip. According to this index, combined with various power grid constraints before and after the initial fault, a mathematical model for obtaining this safety index is given. This model is an optimized mathematical model. For the model, this paper gives a solution idea based on particle swarm. Finally, a few cases are performed in the IEEE-14 node system, and the calculations of the cases proved the accuracy of the proposed model and method. © 2021, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Electric load flow

Hybrid and scalable photonic circuit cavity quantum electrodynamics

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arXiv 2025年

作者： Wang, Xudong Zhu, Yifan Zhang, Xiuqi Qin, Yuanhao Chen, Bowen Chen, Yang Huo, Yongheng Zhang, Jiaxiang Ou, Xin State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Hefei National Research Center for Physical Sciences the Microscale School of physical Sciences University of Science and Technology of China Hefei230026 China Shanghai Research Center for Quantum Science CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Shanghai201315 China

Similar to superconducting circuit quantum electrodynamics (cQED), the development of a photonic analog—specifically, photonic circuit cQED—has become a major focus in integrated quantum photonics. Current solid-state cQED devices, however, face scalability challenges due to the difficulty in simultaneously spectral tuning of cavity modes and quantum emitters while ensuring in-plane optical modes confinement for efficient on-chip light routing. Here, we overcome these limitations by proposing and demonstrating a hybrid solid-state cQED platform integrated on a chip. Our device integrates semiconducting quantum dots (QDs) with a thin-film lithium niobate (TFLN) microring resonator. Leveraging TFLN’s ferroelectric and electro-optic (EO) properties, we implement local spectral tuning of both waveguide-coupled QDs and cavity modes. This approach achieves a broad spectral tuning range of up to 4.82 nm for individual QDs, enabling deterministic on-chip single-photon emission with a Purcell factor of 3.52. When combined with EO cavity tuning, we realize a spectrally tunable hybrid photonic circuit cQED device, sustaining near-constant Purcell factors of 1.89 over a 0.30 nm spectral range. This achievement enables scalable on-chip cavity-enhanced single-photon sources while preserving optical properties and maintaining compatibility with advanced photonic architectures, marking a significant step toward practical implementation of large-scale chip-based quantum networks. Copyright © 2025, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

Deep Reinforcement Learning for User Association in Heterogeneous Networks with Dual Connectivity

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Deep Reinforcement Learning for User Association in Heteroge...

IEEE Conference on Wireless Communications and Networking

作者： Mengjie Yi Yan Zhang Xijun Wang Chao Xu Xiao Ma State Key Lab of Integrated Service Networks Information Science Institue Xidian University Xi’an Shaanxi China School of Electronics and Information Technology Sun Yat-sen University Guangzhou China Key Laboratory of Wireless Sensor Network & Communication Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai China School of Information Engineering Northwest A&F University Yangling Shaanxi China Shaanxi Normal University Xi’an P. R. China

The dual connectivity is emerging as a promising solution to boost capacity in heterogeneous networks. However, it is challenging to obtain an optimal user association in heterogeneous networks with dual connectivity, due to its non-convex and combinatorial nature. In this paper, we propose a user association scheme based on deep reinforcement learning to maximize the overall network utility, which takes both throughput and user fairness into account, in the downlink of a heterogeneous network. Particularly, each user associates with the macro base station (BS) and a micro BS. We apply a deep Q-network (DQN) to obtain the nearly optimal policy to associate the users and micro BSs. Simulation results demonstrate that DQN-based user association performs better compared to the conventional user association schemes in heterogeneous networks with dual connectivity, and it behaves good scalability when the environment changes.

关键词： Base stations Simulation Scalability Conferences Reinforcement learning Markov processes Throughput

Research progress of glass scintillators with high density and high light yield 42

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Research progress of glass scintillators with high density a...

42nd International Conference on High Energy Physics, ICHEP 2024

作者： Sui, Zexuan Ren, Jing Qian, Sen Du, Dejing Fan, Ruirui Fan, Ruirui Han, Jifeng Hu, Peng Hua, Zhehao Li, Weichang Liu, Shan Liu, Yong Ma, Lishuang Qin, Laishun Liu, Yong Sun, Xinyuan Tang, Gao Wang, Zhile Yang, Dong Yin, Shenghua Zhang, Minghui Zhu, Yao Zhu, Yao Cai, Hua Chen, Danping Key Laboratory of In-Fiber Integrated Optics of Ministry of Education College of Physics and Optoelectronic Engineering Harbin Engineering University 145 Nantong Street Nangang District Harbin150001 China Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications Ministry of Industry and Information Technology of China College of Physics and Optoelectronic Engineering 145 Nantong Street Nangang District Harbin150001 China Institute of High Energy Physics Chinese Academy of Sciences Yuquan Road 19A Beijing100049 China State Key Laboratory of Particle Detection and Electronics Yuquan Road 19A Beijing100049 China China Building Materials Academy Guanzhuang East No.1 Beijing100024 China Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Qinghe Road 390 Shanghai201800 China Neutron source Road 1 Dongguan523803 China Institute of Nuclear Science and Technology Sichuan University No. 24 Section 1 South of Ring Road 1 Chengdu610065 China Nuclear Instrument Co. Ltd. Hongda South Road 3 Beijing100176 China Beijing Glass Research Institute East Tai Street 1 Beijing101111 China College of Materials and Chemistry China Jiliang University Xueyuan Road 258 Hangzhou310018 China Department of Physics Jinggangshan University Xueyuan Road 28 Ji'an343009 China School of Astronautics Harbin Institute of Technology West Tai Chi Street 92 Harbin150001 China Shanghai Institute of Ceramics Chinese Academy of Sciences Heshuo Road 585 Shanghai201899 China

Glass scintillators (GS), with their tunable composition, large-scale fabrication capabilities, and cost-effectiveness, have emerged as a novel choice for solid scintillation materials. The density of glasses can close to those of scintillation crystals (∼6 g/cm3) at a lower cost, making it the preferred light-emitting device for scintillation detectors. Since 2021, the High-Density Glass Scintillator Collaboration Group (GS group) has been working on the development of large-sized, high-density (∼6 g/cm3), high light output (>1000 ph/MeV), fast decay ( © Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0).

关键词： Scintillation counters

Large-scale quantum-dot-lithium-niobate hybrid integrated photonic circuits enabling on-chip quantum networking

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arXiv 2025年

作者： Wang, Xudong Zhang, Xiuqi Chen, Bowen Zhu, Yifan Qin, Yuanhao Dong, Lvbin Cai, Jiachen Sui, Dongchen Wu, Jinbo Zhang, Quan Liu, Runze Huo, Yongheng Liu, Jin Ou, Xin Zhang, Jiaxiang State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Department of Physics The Chinese University of Hong Kong Hong Kong Hefei National Research Center for Physical Sciences Microscale and School of Physical Sciences University of Science and Technology of China Hefei230026 China Shanghai Research Center for Quantum Science CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Shanghai201315 China State Key Laboratory of Optoelectronic Materials and Technologies School of Physics School of Electronics and Information Technology Sun Yat-sen University Guangzhou510275 China

Hybrid integrated quantum photonics provides a promising approach to combine solid-state artificial atoms with fast reconfigurable photonic circuits, enabling scalable, chip-based quantum networks with enhanced qubit numbers and improved sources connectivity. Self-assembled quantum dots (QDs) are particularly attractive for this long-sought goal due to their ability to generate highly indistinguishable single photons with exceptional brightness and efficiency. The large-scale integration of QDs into low-loss photonic circuits could facilitate the creation of complex photonic quantum networks, enabling the generation, control, and transfer of entangled states via two-photon interference across distributed nodes. However, challenges related to the limited scalability in integration and significant inhomogeneous spectral broadening of QD emissions, and realization of quantum interference among independent sources have hindered progress toward this goal. Here, we present a hybrid photonic architecture that integrates arrays of QD-containing waveguides with low-loss lithium niobate (LN) photonic circuits, incorporating 20 deterministic single-photon sources (SPSs). By leveraging the piezoelectric properties of thin-film lithium niobate (TFLN), we introduce a circuit-compatible strain-tuning technique, achieving on-chip local spectral tuning of individual QD emissions by up to 7.7 meV—three orders of magnitude greater than the transform-limited linewidth of QD single-photon emission. This approach allows for the demonstration of on-chip quantum interference, achieving a visibility of 0.73 between two spatially separated waveguide-coupled QD SPSs which are connected through 0.48 mm-long waveguides, thereby establishing a functional quantum network on the hybrid platform. The large-scale integration of spectrally tunable and quantum-interconnected QD-based SPSs into low-loss LN photonic circuits, combined with the potential for fast electro-optical switching, paves the way

关键词： Semiconductor quantum dots

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

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Chinese Physics B 2018年第2期27卷 588-593页

作者：邢瑶赵德刚江德生李翔刘宗顺朱建军陈平杨静刘炜梁锋刘双韬张立群王文杰李沫张源涛杜国同 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Science College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Microsystem & Terahertz Research Center Chinese Academy of Engineering Physics State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_（1-x ）N/GaN multiple-quantumwell（MQW） laser diode（LD）, the Al composition of inserted p-type AlxGa_（1-x）N electron blocking layer（EBL） is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_（0.04）Ga_（0.96）N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_（1-x）N hole blocking layer（HBL） is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_（1-x）N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_（1-x）N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.

关键词： GaN-based ultraviolet LD electron and hole leakage

Directed exfoliating and ordered stacking of transition-metal-dichalcogenides

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arXiv 2021年

作者： Li, Yanshuang Xie, Xiuhua Li, Binghui Sun, Xiaoli Yang, Yichen Liu, Jishan Feng, Jiying Zhou, Ying Li, Yuanzheng Liu, Weizhen Wang, Shuangpeng Wang, Wei Zeng, Huan Zhang, Zhenzhong Shen, Dawei Shen, Dezhen State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences No. 3888 Dongnanhu Road Changchun130033 China University of Chinese Academy of Sciences Beijing100049 China Institute of Theoretical Chemistry Jilin University Changchun130023 China Center for Excellence in Superconducting Electronics State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of UV-Emitting Materials and Technology Ministry of Education Northeast Normal University Changchun130024 China Moe Joint Key Laboratory Institute of Applied Physics and Materials Engineering Department of Physics and Chemistry Faculty of Science and Technology University of Macau Macao SAR999078 China School of Microelectronics Dalian University of Technology Dalian116024 China

Two-dimensional van der Waals crystals arise limitless scope for designing novel combinations of physical properties via controlling the stacking order or twist angle of individual layers. Lattice orientation between stacked monolayers is significant not only for the engineering symmetry breaking but also for the study of many-body quantum phases and band topology. So far the state-of-art exfoliation approaches focusing on achievements of quality, size, yield, and scalability while lacking sufficient information on lattice orientation. Consequently, interlayer alignment is usually determined by later experiments, such as second harmonic generation spectroscopy, which increased the number of trials and errors for a designed artificial ordering and hampered the efficiency of systematic study. Herein, we report a lattice orientation distinguishable exfoliation method via gold favor epitaxy along the specific atomic step edges, meanwhile, fulfill requirements of high-quality, large-size, and high-yield of monolayers. Hexagonal- and rhombohedral-stacking configurations of bilayer transition metal dichalcogenides are built directly at once result of foreseeing the lattice orientation. Optical spectroscopy, electron diffraction, and angle-resolved photoemission spectroscopy are used to study crystals quality, symmetric breaking, and band tuning, which supports the exfoliating mechanism we proposed. This strategy shows the ability for facilitates the development of ordering stacking especially for multilayers assembling in the future. Copyright © 2021, The Authors. All rights reserved.

关键词： Transition metals