检索结果-内蒙古大学图书馆

Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe

引用

Physical Review Letters 2018年第18期120卷 185701-185701页

作者： Nian-Ke Chen Xian-Bin Li Junhyeok Bang Xue-Peng Wang Dong Han Damien West Shengbai Zhang Hong-Bo Sun State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China Spin Engineering Physics Team Korea Basic Science Institute (KBSI) Daejeon 305-806 Republic of Korea State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA

Time-dependent density-functional theory molecular dynamics reveals an unexpected effect of optical excitation in the experimentally observed rhombohedral-to-cubic transition of GeTe. The excitation induces coherent forces along [001], which may be attributed to the unique energy landscape of Peierls-distorted solids. The forces drive the A1g optical phonon mode in which Ge and Te move out of phase. Upon damping of the A1g mode, phase transition takes place, which involves no atomic diffusion, defect formation, or the nucleation and growth of the cubic phase.

关键词： First-principles calculations Phase transitions

来源：评论

学校读者我要写书评

暂无评论

Design, Fabrication and Characterization of Ultra-High Voltage 4H-SiC MOSFET Transistors

Design, Fabrication and Characterization of Ultra-High Volta...

引用

IEEE International Conference on Solid-State and integrated Circuit Technology

作者： Xiao-Chuan Deng Ben Tan Jun-Tao Li Xuan Li Bo Zhang Institute of Electronic and Information Engineering in Guangzhou University of Electronic Science and Technology of China Dongguan China Microsystem and Terahertz Research Center China Academy of Engineering Physics Mianyang China State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

A 10-kV silicon carbide MOSFET transistor with multi-zone gradient guard ring (MZG-GR) structure is designed, fabricated, and analyzed. Design and optimization based on two-dimensional device simulator TCAD is used to investigate the effects of MZG-GR technique on breakdown for SiC MOSFET devices. It is found that MZG-GR can achieve a maximum blocking voltage owing to alleviated electric field crowding in the periphery of the active area. Moreover, optimized MZG-GR structure exhibits good tolerances to total dose and surface charges. For the SiC MOSFET transistors with a 100 μm thick epi-layer doped to 5×10~(14) cm~(-3), a measured breakdown voltage achieved is 13.6 kV at a source-drain current of 0.01 mA, corresponding to about 95% of the ideal value for a 1-D structure. Furthermore, the variation in reverse blocking voltage with respect to the ring spacing observed in the fabricated transistors shows a good agreement with the simulated results in the trend.

关键词： MOSFET Fabrication Characterization

来源：评论

学校读者我要写书评

暂无评论

Graphene induced large shift of surface plasmon resonances of gold films: Effective medium theory for atomically thin materials

arXiv

引用

arXiv 2019年

作者： Alam, Md Kamrul Niu, Chao Wang, Yanan Wang, Wei Li, Yang Dai, Chong Tong, Tian Shan, Xiaonan Charlson, Earl Pei, Steven Kong, Xiang-Tian Hu, Yandi Belyanin, Alexey Stein, Gila Liu, Zhaoping Hu, Jonathan Wang, Zhiming Bao, Jiming Materials Science and Engineering University of Houston HoustonTX77204 United States Department of Electrical & Computer Engineering Baylor University WacoTX76798 United States Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu Sichuan610054 China Department of Electrical and Computer Engineering University of Houston HoustonTX77204 United States Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo Zhejiang315201 China Key Laboratory of Graphene Technologies and Applications of Zhejiang Province Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang315201 China Department of Civil and Environmental Engineering University of Houston Houston TX77204 United States Department of Physics & Astronomy Texas A&M University College StationTX77843 United States Chemical and Biomolecular Engineering University of Tennessee KnoxvilleTN37996 United States State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan610054 China

Despite successful modeling of graphene as a 0.34-nm thick optical film synthesized by exfoliation or chemical vapor deposition (CVD), graphene induced shift of surface plasmon resonance (SPR) of gold films has remained controversial. Here we report the resolution of this controversy by developing a clean CVD graphene transfer method and extending Maxwell-Garnet effective medium theory (EMT) to 2D materials. A SPR shift of 0.24ºis obtained and it agrees well with 2D EMT in which wrinkled graphene is treated as a 3-nm graphene/air layered composite, in agreement with the average roughness measured by atomic force microscope. Because the anisotropic built-in boundary condition of 2D EMT is compatible with graphene’s optical anisotropy, graphene can be modelled as a film thicker than 0.34-nm without changing its optical property;however, its actual roughness, i.e., effective thickness will significantly alter its response to strong out-of-plane fields, leading to a larger SPR shift. Copyright © 2019, The Authors. All rights reserved.

关键词： Surface plasmon resonance

来源：评论

学校读者我要写书评

暂无评论

Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

引用

Chinese Physics Letters 2017年第5期34卷 101-105页

作者：王盛凯马磊常虎东孙兵苏玉玉钟乐李海鸥金智刘新宇刘洪刚 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Guilin 541004 Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

关键词： InGaAs Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric MOSFET Al

来源：评论

学校读者我要写书评

暂无评论

Simulation of a Novel integrated 4H-SiC Temperature Sensor

Simulation of a Novel Integrated 4H-SiC Temperature Sensor

引用

International Conference on Solid-State and integrated Circuit Technology

作者： Hang Gu Yourun Zhang Juntao Li Yidan Tang Yun Bai High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu China Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu China

This paper presents a novel integrated Schottky barrier diode temperature sensor in a 4H-SiC power MOSFET. Dual electrical isolation and additional current path are applied to this temperature sensor, allowing the sensor to work properly in any operating state of power MOSFET. Due to the sufficient electrical isolation, the crosstalk between sensor and power MOSFET is almost eliminated. Furthermore, high sensitivity S=1.21mV/K is observed for a constant bias current of I d =1mA. The temperature sensor exhibits a good degree of linearity with a root mean square error R 2 =0.99996.

关键词： Temperature sensors Temperature measurement MOSFET Current measurement Junctions Schottky diodes Crosstalk

来源：评论

学校读者我要写书评

暂无评论

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting Ring

A Near Ideal Edge Termination Technique for Ultrahigh-Voltag...

引用

Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Xiaochuan Deng Shaodong Xu Bo Zhang Lirao Zeng Chenzhan Li Jia Wu Juntao Li State Key Laboratory of Electronic Thin Films and Integrated Device University of Electronic Science and Techonology of China Chengdu China Institute of Electronic and Information Engineering in Guangzhou University of Electronic Science and Techonology of China Chengdu China Semiconductor Business Unit Zhuzhou CRRC Times Electric Co.Ltd Zhuzhou China Microsystem and Terahertz Research Center China Academy of Engineering Physics Mianyang China

ISBN: (纸本)9781538643938

In this paper, an improved 4H-silicon carbide (SiC) junction barrier Schottky (JBS) rectifier with the application of multi-zone gradient filed limiting ring (MZG-FLR) is proposed and fabricated without extra process steps or masks. Multi-zone variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. A breakdown voltage of 14 kV at a leakage current of 1×10 -5 A is achieved from the fabricated rectifiers with a 100 μm thick N- epi-layer doped to 5×10 14 cm -3 , which is nearly 99% of the ideal parallel-plane value. A forward current density of 20 A/cm 2 has been measured at a forward voltage drop of 4.1 V for devices with an active area of 0.15 mm 2 . The simulation and experimental results show that the proposed device exhibits approximately 50% improvement in the reverse blocking voltage, and indicate that MZG-FLR structure is promising as an ultrahigh voltage operation device (>10kV) for high-power electronic systems applications.

关键词： Silicon carbide Rectifiers Electric breakdown Limiting Voltage measurement Junctions Electric fields

来源：评论

学校读者我要写书评

暂无评论

Special issue on 2016 International Conference on Intelligence science and Big Data engineering

Special issue on 2016 International Conference on Intelligen...

引用

作者： Zheng, Wei-Shi Gao, Xinbo Li, Yuanqing Lai, Jianhuang School of Data and Computer Science Sun Yat-sen University China State Key Laboratory of Integrated Services Networks School of Electronic Engineering Xidian University Xi'an710071 China School of Automation Science and Engineering South China University of Technology China Guangzhou Key Laboratory of Brain Computer Interface and Applications Guangzhou 510640 China School of Data and Computer Science Sun Yat-sen University Guangzhou510275 China

来源：评论

学校读者我要写书评

暂无评论

Enhanced Electrochemical Performance of Cooper Sulfides Coated Electrochemical Modified Carbon Cloth and Its Application in Flexible Supercapacitors

引用

IOP Conference Series: Materials science and engineering 2019年第2期612卷

作者： Xin He Xiling Mao Wenyao Yang Yujiu Zhou Weicen Liu Yajie Yang Jianhua Xu School of Optoelectronic science and technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu P. R. China Engineering Research Center of New Energy Storage Devices and Applications Chongqing University of Arts and Sciences Chongqing 402160 P. R.China

All High-performance flexible electrochemical energy storage devices such as supercapacitors (SCs) and lithium ion batteries (LIBs) are highly desirable as a result of the ever-increasing demands for stretchable electronics. In this work, an effective two-step strategy contain surface and structural modulation and hydrothermal method is developed to grow cooper sulfides onto a highly active surface with pores and numerous functional oxygenic groups. Arising from rough surface and increased active sites, the as-prepared activated loosen cooper sulfides coated electrochemical modified carbon cloths (CuS@ECC) electrode not only achieves a large capacitance (410 F cm−2 at 1 mA cm−2) and fast kinetics but also shows excellent cycling durability (maintain 95% initial capacitance after 3000 cycles). This dual modification strategy may throw light on the rational design of new generation advanced composited electrodes for high-performance flexible supercapacitors.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Photodetectors: Ultrastable Lead‐Free Double Perovskite Photodetectors with Imaging Capability (Adv. Mater. Interfaces 10/2019)

引用

Advanced Materials Interfaces 2019年第10期6卷

作者： Ying Li Zhifeng Shi Lingzhi Lei Sen Li Dongwen Yang Di Wu Tingting Xu Yongzhi Tian Yingjie Lu Ye Wang Lijun Zhang Xinjian Li Yuantao Zhang Guotong Du Chongxin Shan Key Laboratory of Materials Physics of Ministry of Education Zhengzhou University Daxue Road 75 Zhengzhou 450052 China School of Physics and Engineering Zhengzhou University Kexue Road 100 Zhengzhou 450001 China State Key Laboratory of Superhard Materials Key Laboratory of Automobile Materials of MOE and Department of Materials Science and Engineering Jilin University Changchun 130012 China State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Qianjin Street 2699 Changchun 130012 China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116023 China State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China

来源：评论

学校读者我要写书评

暂无评论

Coexistence of intrinsic superconductivity and topological insulator state in monoclinic phase WS2

arXiv

引用

arXiv 2018年

作者： Fang, Yuqiang Pan, Jie Zhang, Dongqin Wang, Dong Hirose, Hishiro T. Terashima, Taichi Uji, Shinya Yuan, Yonghao Li, Wei Tian, Zhen Xue, Jiamin Ma, Yonghui Zhao, Wei Xue, Qikun Mu, Gang Zhang, Haijun Huang, Fuqiang State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Science Shanghai China National Laboratory of Solid State Microstructures and School of Physics Nanjing University Nanjing China Collaborative Innovation Center of Advanced Microstructures Nanjing China State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing China State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing China Collaborative Innovation Center of Quantum Matter Beijing China National Institute for Materials Science Tsukuba Ibaraki Japan School of Physical Science and Technology ShanghaiTech University Shanghai China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of Chinese Academy of Sciences Beijing China

Recently, intriguing phenomena of superconductivity, type-II Weyl semimetal or quantum spin Hall states were discovered in metastable 1T'-type VIB-group transition metal dichalcogenides (TMDs). Here, we report that monoclinic phase WS2 was discovered and synthetized in our experiments. The intrinsic superconducting transition was observed in monoclinic WS2 with a transition temperature Tc of 8.8 K which is the highest among previously reported TMDs without any fine-tuning process. Interestingly, topological insulator state, defined by topological invariant Z2, was also discovered with a single Dirac cone on the surface, which is different from all topological states reported in TMDs. Further, the electronic structure was found to have a strong anisotropy by Shubnikov–de Haas oscillations and first-principles calculations. Our findings reveal that monoclinic WS2 might be a new topological superconductivity candidate with a strong anisotropy. Copyright © 2018, The Authors. All rights reserved.

关键词： Transition metals

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：