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Entrepreneurial Knowledge and the Influence of Entrepreneurship Education on Students' Entrepreneurial AbilitiesEntrepreneurial Knowledge and the Influence of Entrepreneurship Education on Students' Entrepreneurial Abilities

Entrepreneurial Knowledge and the Influence of Entrepreneurs...

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The 9th International Conference on Management and Service science (MASS 2015)

作者： Changqing Lai Wenjing lv Yuning Jiang School of Economics and Management Tsinghua University Key Lab of Integrated Microsystem Science & Engineering Applications Shenzhen Graduate SchoolPeking University

This paper studies the influence of entrepreneurship education on students' entrepreneurial abil-ities from the perspective of social network. In four college students' entrepreneurship case stu-dies from one university,we adopted methodological triangulation and multiple methods to guar-antee the reliability and validity of the research. We proposed that courses and projects in entre-preneurship education formed social network among mentors,monitors,and students,in which knowledge could flow frequently. We then discussed the influence of projects pattern,mentor pattern,and monitors pattern on college students' entrepreneurial abilities respectively,by ana-lyzing the structure and ties of the social network. This research contributed to social network theory and entrepreneurship education both theoretically and practically.

关键词： Social Network Entrepreneurship Education Entrepreneurial Abilities Entrepreneurial Knowledge

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Graphene Flakes: Orientation Control of Graphene Flakes by Magnetic Field: Broad Device applications of Macroscopically Aligned Graphene (Adv. Mater. 1/2017)

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Advanced Materials 2017年第1期29卷

作者： Feng Lin Zhuan Zhu Xufeng Zhou Wenlan Qiu Chao Niu Jonathan Hu Keshab Dahal Yanan Wang Zhenhuan Zhao Zhifeng Ren Dimitri Litvinov Zhaoping Liu Zhiming M. Wang Jiming Bao Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu Sichuan 610054 China Department of Electrical and Computer Engineering University of Houston Houston TX 77204 USA Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang 315201 China Key Laboratory of Graphene Technologies and Applications of Zhejiang Province Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang 315201 China Materials Science and Engineering University of Houston Houston TX 77204 USA Department of Electrical and Computer Engineering Baylor University Waco TX 76798 USA Department of Physics and TcSUH University of Houston Houston TX 77204 USA State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan 610054 China

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Structure Re‐determination and Superconductivity Observation of Bulk 1T MoS2

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Angewandte Chemie 2017年第5期130卷

作者： Yuqiang Fang Jie Pan Jianqiao He Ruichun Luo Dong Wang Xiangli Che Kejun Bu Wei Zhao Pan Liu Gang Mu Hui Zhang Tianquan Lin Fuqiang Huang State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Dingxi Road 1295 Shanghai P. R. China University of Chinese Academy of Sciences Yuquan Road 19 Beijing P. R. China State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Chengfu Road 202 Beijing P. R. China State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Dongchuani Road 800 Shanghai P. R. China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Changning Road 865 Shanghai P. R. China

2H MoS 2 has been intensively studied because of its layer‐dependent electronic structures and novel physical properties. Though the metastable 1T MoS 2 with a [MoS 6 ] octahedron was observed over the microscopic area, the true crystal structure of 1T phase has not been strictly determined. Moreover, the true physical properties have not been demonstrated from experiments owing to the challenge for the preparation of pure 1T MoS 2 crystals. 1T MoS 2 single crystals were successfully synthesized and the crystal structure of 1T MoS 2 re‐determined from single‐crystal X‐ray diffraction. 1T MoS 2 crystallizes in the space group P m1 with a cell of a=b=3.190(3) Å and c=5.945(6) Å. The individual MoS 2 layer consists of MoS 6 octahedra sharing edges with each other. More surprisingly, the bulk 1T MoS 2 crystals undergo a superconducting transition of T c =4 K, which is the first observation of superconductivity in pure 1T MoS 2 phase.

关键词： 1T-MoS2 Strukturanalyse Supraleitfähigkeit

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A multi-objective optimal water strategy using time series analysis and improved genetic algorithm

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Journal of Information and Computational science 2015年第6期12卷 2229-2239页

作者： Lai, Changqing Xu, Zhengchao Jiang, Yuning School of Economics and Management Tsinghua University Beijing China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan China Key Lab. of Integrated Microsystem Science & Engineering Applications Shenzhen Graduate School Peking University Beijing China

Time series analysis and genetic algorithm have a good application in many fields. In present paper, we utilized graph theory, and established a multi-objective optimal water distribution model according to current situation in China. Then, we utilized time series analysis to predict water supply and demand situation, and put forward an improved genetic algorithm solution for optimal water resources strategy. Furthermore, sensitivity and effectivity of the improved genetic algorithm is fit to resolve the model. This method can be extended to other various resources-distribution fields. Copyright © 2015 Binary Information Press.

关键词： Graph theory

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Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor

Ultra low power circuits design based on III-V group heteroj...

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International Conference on ASIC

作者： Jipan Huang Fang Gao Xin'an Wang Hongying Chen The Key Laboratory of Integrated Micro-systems Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen China

With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used for low power applications. In this paper, InverterFO1, two-input XOR gates and SRAM cell based on III-V heterojunction TFET are designed and evaluated. Leakage power of TFET InverterFO1 decreased to 1.7%. Leakage power of SRAM cell obtains 76.3X improvements over 130nm CMOS commercial model at VDD=0.6V. Meanwhile, this paper talks about the effect of asymmetry Current of TFET to the topology structure of pass-transistor based circuits.

关键词： TFETs SRAM cells CMOS integrated circuits MOSFET Circuit stability

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Robust energy-efficient power loading for MIMO system under imperfect CSI

Robust energy-efficient power loading for MIMO system under ...

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作者： Rui, Yun Deng, Lei Wang, Qian Li, Jing Qian, Guoming Li, Mingqi Wang, Yingguan Shanghai Advanced Research Institute National Mobile Communications Research Laboratory Southeast University 201210 China Department of Information Engineering Chinese University of Hong Kong Hong Kong999077 Hong Kong School of Computer Science Wuhan University 430072 China State Key Laboratory of Integrated Service Networks Xidian University 710075 China College of Electronic Science and Engineering in NUPT 210003 China Shanghai Advanced Research Institute Chinese Academic of Science 201210 China Key Lab of Wireless Sensor Network and Communications Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 201210 China

In this paper, we will investigate the energy efficient power loading problem in multipleinput multiple-output singular value decomposition (MIMO-SVD) architecture. Most existing power loading schemes are developed on the assumption that a scheduler possesses perfect channel state information (CSI). However, in practice, perfect CSI is not always available. In this paper, we propose an energy-efficient power loading scheme for MIMO system under imperfect CSI, taking into account the effects of channel estimation error (CEE). Specifically, we propose two algorithms to maximise the system energy efficiency. One is a global method which can achieve the global optimal solution with high computational complexity;the other is a suboptimal method which can obtain the approximate optimal solution with lower computational complexity. Simulation results validate the effectiveness and robustness of our proposed power loading scheme. Copyright © 2015 Inderscience Enterprises Ltd.

关键词： MIMO systems

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Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

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Chinese Physics Letters 2014年第2期31卷 97-100页

作者：王东盛张克雄梁红伟宋世巍杨德超申人升柳阳夏晓川骆英民杜国同 School of Physics and Optoelectronic Engineering Dalian University of Technology Dalian 116024 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 State Key Laboratory on Integrated Optoelectronics School of Electronic Science and Engineering Jilin University Changchun 130012

Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.

关键词： LIGHT emitting diodes MICROSTRUCTURE METAL organic chemical vapor deposition SCANNING electron microscopy PHOTONS ELECTROLUMINESCENCE

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Resistive switching behaviour in single crystal SrTiO3 annealed by laser

Resistive switching behaviour in single crystal SrTiO3 annea...

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2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)

作者： Xinqiang Pan Yao Shuai Chuangui Wu Wenbo Luo Xiangyu Sun Wanli Zhang Xin Ou Heidemarie Schmidt State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Technische Universit(a)t Chemnitz Department of Materials for NanoelectronicsFaculty of Electrical Engineering and Information TechnologyChemnitz 09126Germany

Resistive switching behaviour has been intensively studied in oxides[1,2].In oxides,it is well known that oxygen vacancies play an important role in the resistive switching behaviour[3].The oxygen vacancies can be created in single crystal by annealing processes,such as annealing in vacuum or in inert gas *** the annealing process is significant for the investigation of resistive *** present work,the single crystal SrTiO3(STO)was annealed by *** to vacuum annealing or annealing in inert gas atmosphere,using laser annealing,the sample can be locally heated to a high enough temperature while other part of the sample still maintain a low *** laser annealing can be compatible with other processes and avoid the damage of other part of the sample caused by the *** addition,it can be controlled to only have effects on the specific area in the *** single crystal STO was annealed by laser with the laser energy of 0.6 J/*** the laser annealing,Ti/Pt was sputtered on the surface of the single crystal and the electrodes were formed by *** planar structure of Pt/Ti/STO/Ti/Pt was *** area of the single electrode was 0.01 *** distance between the adjacent electrodes was 5 lμ*** resistive switching behaviour was observed between the adjacent planar electrodes at the voltage of 7 *** can be ascribe to the generation of oxygen vacancies by laser *** work proved that the resistive switching behaviour can be achieved in single crystal STO by using laser annealing to creat oxygen vacancies,which provides a new path to make the single crystal or single crystalline thin film show the resistive switching *** this work is also beneficial for the understanding of the mechanism of resistive switching and its application.

关键词： resistive switching laser annealing process

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Design of a novel digital baseband for UHF RFID tag

Design of a novel digital baseband for UHF RFID tag

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2014 International Conference on Advances in Materials science and Information Technologies in Industry, AMSITI 2014

作者： Lv, Wei Wang, Xin-An Su, Ji-Ting Key Laboratory of Integrated Micro-systems Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen 518055 China

ISBN: (纸本)9783038350125

This paper presents a novel low-power digital baseband for UHF RFID tag. The design is complied with a modified ISO 18000-6C protocol. In order to reduce the peak power, module-reuse and other advanced low power techniques are applied. And a novel baseband architecture is discussed, which fulfills the protocol functions and reduces power consumption. The whole tag chip, including digital baseband, RF/analog frontend and memory, has been taped out using TSMC 0.18um CMOS process. The chip area is 89234 um2 excluding test pads. Its power consumption is 11.63uw under 1.1v power supply. © (2014) Trans Tech Publications, Switzerland.

关键词： Radio frequency identification (RFID)

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Gold nanorod saturable absorbers for wideband mode-locked fiber lasers

Gold nanorod saturable absorbers for wideband mode-locked fi...

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Advanced Solid State Lasers, ASSL 2014

作者： Kang, Zhe Gao, Xuejian Li, Qing Zhang, Lei Jia, Zhixu Feng, Yan Qin, Guanshi Qin, Weiping State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun130012 China Shanghai Key Laboratory of Solid State Laser and Applications Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai201800 China

We demonstrated passively mode-locked ytterbium and erbium doped fiber lasers operating at 1039 and 1560 nm by using a common gold nanorods saturable absorber film. © OSA 2014.

ISBN: (纸本)9781557528223

We demonstrated passively mode-locked ytterbium and erbium doped fiber lasers operating at 1039 and 1560 nm by using a common gold nanorods saturable absorber film. © OSA 2014.

关键词： Nanorods

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