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Study and analysis of coefficient mismatch in a MASH21 sigma—delta modulator

Journal of Semiconductors 2010年第1期31卷 79-82页

作者：葛彬杰王新安张兴冯晓星汪清勤 Key Laboratory of Integrated Microsystem Science & Engineering Applications Shenzhen Graduate School of Peking University

The quantization noise leakage of the first stage in a MASH21 sigma-delta modulator is analyzed. The results show that the finite DC gain of the opamp is the main reason for noise leakage, and finite GBW and SR only generate harmonic distortion. The relationship between DC gain and leakage is modeled and conclusions on design criteria are reached. As an example, a MASH21 modulator for a digital audio application is realized. This modulator, fabricated in an 0.18 μm mixed signal process, achieves an SNDR of 91 dB with 1.8 V supply, which verifies the analysis and design criteria.

关键词： mismatch leakage modeling sigma-delta modeling DC gain

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Sigma-delta modulator modeling analysis and design

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Journal of Semiconductors 2010年第9期31卷 79-83页

作者：葛彬杰王新安张兴冯晓星汪清勤 Key Laboratory of Integrated Microsystem Science & Engineering Applications Shenzhen Graduate School of Peking University

This paper introduces a new method for SC sigma-delta modulator *** studies the integrator＇s different equivalent circuits in the integrating and sampling *** model uses the OP-AMP input pair＇s tail current（I_0） and overdrive voltage（v_（on）） as *** modulator＇s static and dynamic errors are analyzed.A group of optimized I0 and von for maximum SNR and power x area ratio can be obtained through this *** examples, a MASH21 modulator for digital audio and a second order modulator for RFID baseband are implemented and tested, and they can achieve 91 dB and 72 dB respectively,which verifies the modeling and design criteria.

关键词： sigma-delta modeling transient behavior optimization

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Publisher’s Note: “Estimating the pressure of laser-induced plasma shockwave by stimulated Raman shift of lattice translational modes” [Appl. Phys. Lett. 101, 021908 (2012)]

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Applied Physics Letters 2012年第7期101卷

作者： Zhanlong Li Xiaoning Shan Zuowei Li Junsheng Cao Mi Zhou Yiding Wang Zhiwei Men Chenglin Sun 1State Key Laboratory of Superhard Materials College of Physics Jilin University Changchun 130012 China 2College of Physics Jilin University Changchun 130012 China 3State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China 4College of Electronic Science and Engineering and Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130012 China

This article was originally published online on 13 July 2012 with an error in author Junsheng Cao’s name. The article was correct as it appeared in the printed

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Design and implementation of a novel programmable power monitor chip

Design and implementation of a novel programmable power moni...

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2nd Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2010

作者： Ge, Binjie Wang, Xin'an Zhang, Xing Feng, Xiaoxing Wang, Qingqin Key Lab. of Integrated Microsystem Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen China

ISBN: (纸本)9781424467372

This paper proposes a novel programmable power monitor chip. With only three program pins and without any off-chip devices, the chip has 36-program states by taking different connections for the 3-program pins. The chip can monitor the voltage from 1.5v to 5.0v with 0.1v step. Special SH circuit and current limited digital blocks are employed to achieve ultra low quiescent power. The implementation is based on 2M1P 0.5um mixed signal process, the die area is 0.24mm2, and the quiescent current is only 3uA.

关键词： Signal processing

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Operator design methodology and implementation for H.264 entropy encoder

Operator design methodology and implementation for H.264 ent...

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International Conference on Information engineering and Computer science

作者： Hu, Ziyi Chen, Kuilin Wang, Xin'an Key Lab. of Integrated Microsystem Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen 518055 China

ISBN: (纸本)9781424479412

Currently the ASIC applications such as multimedia processing require shorter time-to-market and higher performance. Furthermore, with the IC manufacturing technology developing continually, from transistor level to logic gate level, the size of standard cells in digital circuits is increasing correspondingly. New methodology should be proposed to meet the need for shorter time-to-market IC industry, and the requirement of advanced IC manufacturing technology. This paper proposed the concept and principle of operator design methodology, then focused on the entropy coding application by the reconfigurable operator and finally gave the synthesis data. The results show that compared with the hardware design at the same cost of resources, this methodology can obtain hardware of suitable performance with regular structure. What is more, it can improve the design speed efficiently. ©2010 IEEE.

关键词： Entropy

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Operator Design Methodology and Implementation for H.264 Entropy Encoder

Operator Design Methodology and Implementation for H.264 Ent...

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International Conference on Information engineering and Computer science (ICIECS)

作者： Ziyi Hu Kuilin Chen Xin'an Wang Key Laboratory of Integrated Microsystem Science & Engineering Applications Peking University Shenzhen China

关键词： Entropy coding Hardware Clocks Application specific integrated circuits Design methodology

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Design and implementation of a novel programmable power monitor chip

Design and implementation of a novel programmable power moni...

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Asia Pacific Conference on Postgraduate Research in Microelectronics & Electronics (PrimeAsia)

作者： Binjie Ge Xin'an Wang Xing Zhang Xiaoxing Feng Qingqin Wang Key Laboratory of Integrated Microsystem Science & Engineering Applications Peking University Shenzhen China

This paper proposes a novel programmable power monitor chip. With only three program pins and without any off-chip devices, the chip has 36-program states by taking different connections for the 3-program pins. The chip can monitor the voltage from 1.5 v to 5.0 v with 0.1 v step. Special SH circuit and current limited digital blocks are employed to achieve ultra low quiescent power. The implementation is based on 2M1P 0.5 μm mixed signal process, the die area is 0.24mm 2 , and the quiescent current is only 3 uA.

关键词： Monitoring Pins Switches Clocks Hysteresis Capacitors Low voltage

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On Web Page extraction based on position of DIV

On Web Page extraction based on position of DIV

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International Conference on Computer and Automation engineering, ICCAE

作者： Xunhua Liu Hui Li Dan Wu Jiaqing Huang Wei Wang Li Yu Ye Wu Hengjun Xie Key Laboratory of Integrated Microsystem Science and Engineering Applications Shenzhen Graduate School Peking University Shanghai China Key Laboratory of Integrated Microsystem Science and Engineering Applications Shenzhen Graduate School of Peking University 518055 China Department of Electronics & Information Engineering Huazhong University of Science and Technology Wuhan China Value-added Service Center China Telecom Shenzhen Branch Company Limited Shenzhen China

ISBN: (纸本)9781424455850

For the popular DIV page layout in Web Pages, this paper presents a method based on the position of DIV to extract main text from the body of Web pages by reconstructing, remaining atomic DIV and analyzing DIV position. Experiments showed that the accuracy rate of extraction can reach more than 90%, with a high versatility and accuracy.

关键词： Web pages Data mining HTML Information analysis Information retrieval Containers Standards publication Cascading style sheets Microelectronics Telecommunications

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Numerical simulation of detection response of field effect MOS transistor to modulated terahertz radiation signal

Numerical simulation of detection response of field effect M...

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作者： Wang, Yinglei Yan, Zhifeng Zhu, Jingxuan Lin, Xinnan He, Jin Chan, Mansun Cao, Juncheng Institute of Microelectronics School of Electronic Engineering and Computer Science Peking University Beijing 100871 China Key Laboratory of Integrated Microsystems School of Computer and Information Engineering Peking University Shenzhen Graduate School Shenzhen 518055 China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clearwater Bay Kowloon 999077 Hong Kong Shanghai Institute of Microsystem and Information Technology Chinese Academy of Science Shanghai 200050 China

The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in details in this paper by a numerical simulation method developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET. The numerical method is used with a universal MOSFET carrier density equation coupled to the basic hydrodynamic equations in a much wider range of operation region of MOSFET terahertz detector to develop the numerical simulation program. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET. Copyright © 2010 American Scientific Publishers. All rights reserved.

关键词： MOSFET devices

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Numerical simulation on the voltage response of field effect transistor by focused terahertz radiation

Numerical simulation on the voltage response of field effect...

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International Symposium on Photonics and Optoelectronics, SOPO 2010

作者： Yan, Zhifeng Zhu, Jingxuan Wang, Yinglei Lin, Xinnan He, Jin Key Laboratory of Integrated Microsystems School of Computer and Information Engineering Peking University Shenzhen Graduate School Shenzhen 518055 China Institute of Microelectronics School of Electronic Engineering and Computer Science Peking University Beijing 100871 China Peking University Shenzhen SOC Key Laboratory PKU HKUST Shenzhen Institute IER Bldg. W303 West Tower Shenzhen 518057 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences China

ISBN: (纸本)9781424449644

A numerical method is proposed to simulate the corresponding terahertz photoresponse which is induced by radiations between source-and-gate and gate-and-drain electrodes in field effect transistors. Simulations illustrate that the response of terahertz radiation in field effect transistor depends on the gate bias. The response contains contributions of different polarities which induced by radiations between 'source and gate electrodes' and 'gate and drain electrodes' respectively. The simulation matches well with the existing theory quantitatively. The proposed method is also used to study the response in resonant region by changing some parameters of field effect transistors (FET). The results illustrate that it is a useful tool in THz detector design and optimization. ©2010 IEEE.

关键词： Electrodes

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