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Study of high-order nonlinear propagation characteristics of partially coherent beams

Optics Express 2025年第3期33卷 6319-6330页

作者： Liu, Zexu Zhao, Qian Xu, Lihailiang Wan, Yuan Cai, Yangjian Liang, Chunhao Wang, Hongzhen Shandong Provincial Engineering and Technical Center of Light Manipulations Shandong Provincial Key Laboratory of Optics and Photonic Device School of Physics and Electronics Shandong Normal University Jinan250358 China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal University Jinan250358 China East China Normal University Joint Research Center of Light Manipulation Science and Photonic Integrated Chip East China Normal University Shandong Normal University Shanghai200241 China

This study develops a numerical simulation method and investigates the propagation characteristics of partially coherent beams in nonlinear media, specifically addressing the research gaps related to the accuracy of numerical methods and higher-order nonlinear effects. key findings include the validated of a new simulation method against the split-step Fourier method with analytical formulas, demonstrating enhanced accuracy. Our findings reveal that, under the higher-order nonlinear effect conditions, the focusing ability of Gaussian-Schell model (GSM) beams under nonlinear conditions is opposite to that when only considering the third-order nonlinear refractive index coefficient (n2). It is also shown that, at higher intensities, GSM beams exhibit a ring-like intensity distribution similar to Gaussian beams, significantly influenced by coherence levels. This distribution becomes more pronounced with higher-order nonlinear effects, highlighting the role of coherence in shaping beam intensity structures. Overall, this research introduces new methods and deeper insights into the behavior of partially coherent beams in nonlinear media, emphasizing the importance of coherence in controlling nonlinear optical phenomena. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Optical depth

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3D-printed compact snap-shot lensless birefringence microscope based on digital on-axis holography

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Optics Express 2025年第6期33卷 12709-12723页

作者： Yue, Qingyang Han, Yabo Yang, Yang Ning, Tingyin Liu, Xianlong Guo, Chengshan Cai, Yangjian Shandong Provincial Engineering and Technical Center of Light Manipulations Shandong Provincial Key Laboratory of Optics and Photonic Device School of Physics and Electronics Shandong Normal University Jinan250014 China Collaborative Innovation Center of Light Manipulation and Applications Shandong Normal University Jinan250358 China Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University Shandong Normal University East China Normal University Shanghai 200241 China

Birefringence, an inherent optical characteristic in anisotropic materials arising from structural anisotropy of materials or mechanical stress, plays a major role in understanding the microscopic structures of anisotropic materials and has been widely studied in biology and medicine. To achieve birefringence imaging of dynamic objects, various snap-shot quantitative birefringence imaging techniques relying on lenses have been developed, which are bulky and restricted to laboratory settings. In this paper, we present a 3D printed single-shot lens-free polarization holographic microscope based on digital on-axis holography, in which a birefringent beam-displacer is introduced in a conventional lens-free imaging system to realize a spatial multiplexing polarization hologram recording. Based on our proposed reconstruction algorithm, quantitative polarization holographic images and birefringence parameter distributions of dynamic samples can be retrieved simultaneously. The relevant experimental results demonstrated the feasibility of our proposed polarization imaging system, which exhibits higher stability and greater immunity to mechanical vibration and air fluctuation, and it has the potential for imaging dynamic specimens, especially in resource-limited environments. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Birefringence

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Extreme pulse generation by an interband cascade laser with optical injection and step-down current perturbations

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Physical Review A 2024年第5期109卷 053506-053506页

作者： Y. Mao W. Feng G. H. Song C. Wang J. C. Cao Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China and State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 China

The dynamic performance of an interband cascade laser (ICL) with optical injection is studied within the framework of rate equations. The effect of stage number m and active area A on the ICL optical injection-locking diagram is numerically simulated. ICLs with a small stage number and large active area have a relatively large phase-locked region. When the stage number is small, the system exhibits a large number of extreme pulses in the frequency-unlocked region. We show that step-down perturbations of the laser pump current can trigger and suppress extreme pulses by changing the parameters of amplitude, duration, and modulation time points. The amplitude and duration of current perturbation have a significant impact on the number of extreme pulses. This work provides different insight into the generation and control of extreme pulses based on ICLs.

关键词： Bifurcations Chaos Control & applications of chaos Lasers Nonlinear optics

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Miniaturized Dual-Mode SAW Filters using 6-inch LiNbO3-on-SiC for 5GNR and WiFi 6

Miniaturized Dual-Mode SAW Filters using 6-inch LiNbO3-on-Si...

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2023 International Electron Devices Meeting, IEDM 2023

作者： Zheng, Pengcheng Zhang, Shibin Xu, Jin-Xu Fang, Xiaoli Chen, Yang Huang, Kai Sui, Dongchen Zhang, Xiuyin Ou, Xin Chinese Academy of Sciences National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Shanghai200050 China University of Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering Beijing100049 China South China University of Technology School of Microelectronics Guangzhou511442 China

ISBN: (纸本)9798350327670

In this work, low-loss and wide-band surface acoustic wave (SAW) filters in the frequency range of 3.3 to 6.3 GHz were demonstrated on 6-inch X-cut LiNbO3-on-SiC substrate fabricated by the ion-slicing process. Further, the SAW filter with n77 and n79 dual-band response or n79 and WiFi 6 dual-band response was demonstrated for the first time in a compact footprint of 2, respectively. The shear horizontal (SH) and longitudinal leaky (LL) dual-mode excitation as well as their preferred in-plane orientations are analyzed using the finite element method. The fabricated SH-SAW filter aiming at the n77 band shows a large 3-dB bandwidth (BW) of 495 MHz and a low insertion loss (IL) of 0.85 dB. The LL-SAW filters aiming at WiFi 6 band feature scalable center frequencies (fc) from 5.34 to 6.1 GHz, 3-dB BWs between 330 and 402 MHz, and ILs between 1.32 and 1.74 dB. All devices, including the dual-band filters, share the same two-step manufacturing process and the device wavelengths (?) are above 1.0 µm. This dual-mode SAW technology using LiNbO3-on-SiC shows the strong potential for miniaturized and low-cost front-ends in 5G and WiFi 6 bands. © 2023 IEEE.

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Ultralow-filling-factor superconducting nanowire single-photon detector utilizing a 2D photonic crystal

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Photonics Research 2023年第12期11卷 2128-2135页

作者： YOU XIAO XIYUAN CAO XIAOYU LIU LIANXI JIA JIA HUANG HAO LI AIMIN WU ZHEN WANG LIXING YOU National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences(SIMITCAS)Shanghai 200050China State Key Laboratory of Dynamic Measurement Technology School of Instrument and ElectronicsNorth University of ChinaTaiyuan 030051China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Superconducting nanowires enable the operation of outstanding single-photon detectors,which are required particularly for quantum information and weak-light measurement ***,the trade-off between detection speed and efficiency,which is related to the filling factors of superconducting nanowires,is still a ***,we propose a fast,efficient single-photon detector fabricated by integrating ultralow-filling-factor meandered superconducting nanowires atop a photonic crystal(PhC)*** unique structure enables a fast photon response due to the low kinetic inductance of the short nanowires and ensures efficient photon absorption due to the resonant effect of the PhC *** proposed detector has a filling factor of only~12% while maintaining a high maximum absorption in our simulation of 90%.The fabricated device exhibits a maximum system detection efficiency of 60%,a maximum count rate of~80 MHz,and a recovery time of only~12 ns,which is three times faster than that of the conventional meandered structure at the same sensing diameter(18μm).This work helps advance the movement toward high-efficiency,high-speed single-photon detectors and promotes their future application in quantum communication and imaging.

关键词： nanowires superconducting enable

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Natural Graphene Plasmonic Nano-Resonators for Highly Active Surface-Enhanced Raman Scattering Platforms

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Energy & Environmental Materials 2023年第5期6卷 269-280页

作者： Xiaoqiang Feng Zhiduo Liu Guanglin Zhang Shan Zhang Shuiping Huang Zhengyi He Genwang Wei Siwei Yang Yangguang Zhu Caichao Ye Cheng-Te Lin Guqiao Ding Gang Wang Department of Microelectronic Science and Engineering School of Physical Science andNingbo UniversityNingbo 315211China State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Academy for Advanced Interdisciplinary Studies&Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and TechnologyShenzhen 518055China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China

Highly sensitive and uniform three-dimensional(3D)hybrid heterogeneous structures for use in surface-enhanced Raman scattering(SERS)experiments were fabricated by sequentially decorating high-quality,ultra-clean,graphene quantum dots(GQDs)and Ag nanoparticles(Ag-NPs)onto ***-difference time-domain calculations and scanning Kelvin probe microscopy were used to verify that the Ag-NPs/GQDs/3D-graphene system facilitates substantial electromagnetic enhancement(due to the occurrence of two kinds of"gaps"between the Ag-NPs that form 3D"hot spots")and additional chemical enhancement(in detecting someπ-conjugated molecules).The SERS mechanism was explored in further detail via experimental analysis and confirmed by performing theoretical *** large surface area of the 3D substrate(due to the large specific surface areas of the GQDs and 3D-graphene)results in a better enrichment effect which helps produce lower detection *** particular,the detection limits obtained using the Ag-NPs/GQDs/3D-graphene platform can reach 10^(-11)M for rhodamine 6G,10^(-10)M for methylene blue and dopamine,and 10^(-7)M for tetramethylthiuram disulfide and methyl parathion in apple juice(these are superior to most of the results reported using graphene-based SERS substrates).In summary,the 3D-platform Ag-NPs/GQDs/3D-graphene/Si shows outstanding SERS *** therefore has excellent application prospects in biochemical molecular detection and food safety monitoring.

关键词： Ag-NPs/GQDs/3D-graphene chemical enhancement dopamine Electromagnetic enhancement

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Grating pitch comparison measurement based on Cr atomic transition frequency and Si lattice constant

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Chinese Physics B 2025年第2期34卷 82-88页

作者： Jingtong Feng Rao Xu Ziruo Wu Lihua Lei Yingfan Xiong Zhaohui Tang Guangxu Xiao Yuying Xie Dongbai Xue Xiao Deng Xinbin Cheng Tongbao Li National Metrology and Testing Center for Integrated Circuit Measurement and Inspection Equipment Industry(Shanghai) Tongji UniversityShanghai 200092China Institute of Precision Optical Engineering Tongji UniversityShanghai 200092China MOE Key Laboratory of Advanced Micro-Structured Materials Tongji UniversityShanghai 200092China Shanghai Frontiers Science Center of Digital Optics Tongji UniversityShanghai 200092China Shanghai Professional Technical Service Platform for Full-Spectrum and High-Performance Optical Thin Film Devices and Applications Tongji UniversityShanghai 200092China School of Physics Science and Engineering Tongji UniversityShanghai 200092China Shanghai Metric Optics Technology Co. Ltd.Shanghai 201108China Shanghai Institute of Measurement and Testing Technology Shanghai 201203China

Traceability is the fundamental premise of all metrological activities. The establishment of a traceability chain characterized by a shortened structure, while simultaneously enabling on-site traceability, represents a key trend in the advancement of metrology. This study explores the periodic accuracy and overall uniformity of self-traceable gratings, employing multilayer film gratings with a nominal period of 25.00 nm as the medium. We present a comparative analysis of measurement capabilities in a self-traceable grating calibration system characterized by a ‘top-down’ calibration approach and a Si lattice constant calibration system characterized by a ‘bottom-up’ calibration approach. The results indicate that the values obtained for the multilayer film grating periods, calibrated using the self-traceable grating system, are 24.40 nm with a standard deviation of 0.11 nm. By comparing with the values derived from the Si lattice constant, which yield 24.34 nm with a standard deviation of 0.14 nm, the validity and feasibility of the self-traceable calibration system are confirmed. This system extends and complements existing metrological frameworks, offering a precise pathway for traceability in precision engineering and nanotechnology research.

关键词： nanometrology self-traceable standard material Si lattice constant

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VLS和VSS生长机制调控的单层TMD中的反向掺杂分布

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science China Materials 2023年第12期66卷 4723-4732页

作者：田闯肖润涵隋妍萍冯钰涵王浩敏赵孙文刘家文高秀丽孙浩彭松昂金智刘新宇王爽李湃于广辉 State Key Laboratory of Integrated Circuit Materials Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100049China

掺杂是改善过渡金属二硫族化合物(TMD)单层薄膜性能的重要方法.然而,现有的研究大多集中在掺杂能力上,对掺杂分布的研究还处于起步阶段.近年来,基于旋涂化学气相沉积法研究了掺杂原子空间掺杂分布的差异.这些掺杂的TMD大多是通过气-液-... 详细信息

掺杂是改善过渡金属二硫族化合物(TMD)单层薄膜性能的重要方法.然而,现有的研究大多集中在掺杂能力上,对掺杂分布的研究还处于起步阶段.近年来,基于旋涂化学气相沉积法研究了掺杂原子空间掺杂分布的差异.这些掺杂的TMD大多是通过气-液-固(VLS)生长机制生长的.采用气-固-固(VSS)生长机制生长的TMD尚未被用来深入研究掺杂分布.本文采用Na_(2)WO_(4),NaVO_(3),NaOH(Na-Pre),(NH_(4))_(2)WO_(4),NH_(4)VO_(3)(NH_(4)-Pre)等前驱体合成V–WS_(2).观察到中心和边缘区域完全相反的掺杂分布.还观察到浓度变化较大的界面的出现.通过透射电子显微镜精确地表征了掺杂原子的空间浓度.根据密度泛函理论的计算结果,掺杂分布的差异是由初始态引起的,这与VLS和VSS的生长机制有关.这项工作为控制掺杂原子的分布提供了一种新的方法,对掺杂TMD在微电子和纳米电子器件中的应用具有重要意义.

关键词： transition metal dichalcogenide doping distribution vapor-liquid-solid vapor-solid-solid chemical vapor deposition

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integrated spectrally multiplexed light–matter interface at telecom band

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Photonics Research 2024年第12期12卷 2821-2830页

作者： XUEYING ZHANG BIN ZHANG SHIHAI WEI HAO LI JINYU LIAO TAO ZHOU GUANGWEI DENG YOU WANG HAIZHI SONG LIXING YOU BOYU FAN YUNRU FAN FENG CHEN GUANGCAN GUO QIANG ZHOU Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China Center for Quantum Internet Tianfu Jiangxi LaboratoryChengdu 641419China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Automation Engineering University of Electronic Science and Technology of ChinaChengdu 611731China Key Laboratory of Quantum Physics and Photonic Quantum Information Ministry of EducationUniversity of Electronic Science and Technology of ChinaChengdu 611731China CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China Southwest Institute of Technical Physics Chengdu 610041China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China

The light–matter interface is an important building block for long-distance quantum *** a scalable quantum network with high-rate quantum information processing,it requires to develop integrated light–matter interfaces with broadband and multiplexing *** we demonstrate a light–matter interface at the telecom band in an integrated system.A five-spectral-channel atomic-frequency-comb photonic memory is prepared on a laser-written Er^(3+):LiNbO_(3)*** bandwidth of each channel is 4 GHz with a channel spacing of 15 *** signal photons from time-bin entangled photon pairs at the telecom band are sent into the on-chip memory and recalled after a storage time of 152 *** entanglement-preserving nature of our integrated quantum interface is assessed by an input/output fidelity of>92%for all five spectral *** light–matter interfaces constitute a notable step forward toward a high-rate quantum network involving integrated devices.

关键词： interface quantum spectral

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