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A Dual-Band Dual-Polarized Antenna With High Aperture Reuse Efficiency and Large Frequency Ratio for Modern Wireless Communications

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IEEE Antennas and Wireless Propagation Letters 2024年第1期23卷 14-18页

作者： Zhao, Yue Ge, Lei Gu, Hui Chen, Shi Chang Chung, Ming-An Shenzhen University State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen518060 China Shenzhen University College of Electronics and Information Engineering Shenzhen518060 China Hangzhou Dianzi University Key Laboratory of Rf Circuits and Systems of the Ministry of Education of China Microelectronic Cad Center Hangzhou310018 China National Taipei University of Technology Department of Electronic Engineering Taipei10608 Taiwan

In this letter, a microwave dense dielectric patch antenna and a millimeter-wave (MMW) Fabry-Perot cavity (FPC) antenna are first combined to implement a dual-band dual-polarized antenna with high aperture reuse efficiency and large frequency ratio. In the proposed design, a piece of high-permittivity dielectric and a metallic patch are adopted as not only the radiators of the microwave antenna but also the partially reflective surface and ground plane of the MMW FPC. Furthermore, for performance improvement, the high-permittivity dielectric is sharpened to widen the FPC gain bandwidth, a neutralization line is used to enhance the polarization isolation, and two small capacitive disks are employed to improve the channel isolation. As a demonstration, the proposed antenna is designed at 3.5 and 27 GHz. A prototype is fabricated and achieves 20% bandwidth (VSWR 30 dB) with 8 dBi gain in the low band, 22% bandwidth (VSWR24 dB) with 19.9 dBi gain in the high band, and channel isolation higher than 40 dB. © 2002-2011 IEEE.

关键词： Microwave antennas

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Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

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Chinese Physics B 2023年第5期32卷 478-484页

作者：秦飞飞孙阳杨颖李欣王旭卢俊峰王永进朱刚毅 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province College of Telecommunications and Information EngineeringNanjing University of Posts and TelecommunicationsNanjing 210003China Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications Ministry of Education)Nanjing 210003China Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China College of Physics Nanjing University of Aeronautics and AstronauticsNanjing 211106China

Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is *** photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.

关键词： GaN beam cavity optically pumped lasing dynamically tunable laser source Joule heater

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Laser-generation of focused acoustic vortex with Archimedean spiral optoacoustic surfaces 7

Laser-generation of focused acoustic vortex with Archimedean...

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7th International Symposium on Laser Ultrasonics and Advanced Sensing, LU 2024

作者： Zeng, Yujun Li, Wenyu Kan, Weiwei Shen, Zhonghua School of Physics Nanjing University of Science and Technology Nanjing210094 China MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Nanjing University of Science and Technology Nanjing210094 China Engineering Research Center of Semiconductor Device Optoelectronic Hybrid Integration in Jiangsu Province Nanjing210094 China Key Laboratory of Modern Acoustics MOE Nanjing University Nanjing210094 China

Focused acoustic vortices (FAVs) can stably capture three-dimensional particles. Previous focused acoustic vortex generators were mainly based on arrays of active devices. In order to fully exploit the potential of wavefront manipulation and high spatial accuracy particle capture, a flexible method to remotely trigger the desired high centre frequency ultrasound is required. In this work, we present a scheme for generating ultrasonic vortices through photoacoustic conversion and customised Archimedean spiral absorbing surfaces. By illuminating the absorbing surface with a single pulse of laser light, the laser ultrasound generated by each helical ring coherently interferes near its symmetric propagation axis and then generates vortices, whose common features are a helical wavefront and zero pressure at the centre. In addition to this, its long depth of field and narrow beamwidth offer potential applications in particle capture, biomedical therapy and medical imaging. © 2025 Institute of Physics Publishing. All rights reserved.

关键词： Wavefronts

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Research on Laser Excitation Method Based on Multilayer Optical Absorber 7

Research on Laser Excitation Method Based on Multilayer Opti...

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7th International Symposium on Laser Ultrasonics and Advanced Sensing, LU 2024

作者： Li, Wenyu Kan, Weiwei Zeng, Yujun Yang, Zeru Zeng, Chao Liu, Siyu Chen, Yikai Ni, Chenyin Shen, Zhonghua School of Physics Nanjing University of Science and Technology Nanjing210094 China MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Nanjing University of Science and Technology Nanjing210094 China Engineering Research Center of Semiconductor Device Optoelectronic Hybrid Integration in Jiangsu Province Nanjing210094 China Key Laboratory of Modern Acoustics MOE Nanjing University Nanjing210094 China

Photoacoustic transducers with a single photoacoustic conversion layer generate waves with a relatively uniform energy distribution across a wide bandwidth. The spectral characteristics of the photoacoustic waves formed by multilayer optical absorbers are studied. Under excitation, the multilayer optical absorbers transduce the single laser pulse into a train of ultrasound pulses with varying time intervals. The time-domain and spectral characteristics of the generated acoustic field are analyzed in the simulation based on the boundary conditions, number of layers, and layer spacing of the absorber. The results indicate that, with a constant single-pulse laser energy, when the layer spacing of the multilayer optical absorber is one wavelength, the energy distribution of the photoacoustic waves is in a specific frequency range as the number of layers increases, leading to a gradual increase in acoustic intensity at 5 MHz. In addition, a multilayer absorber with a layer spacing of one wavelength is able to obtain a higher-intensity acoustic Airy beam at 5 MHz compared to a single-layer absorber at the same laser energy in the simulation. This scheme opens prospects for utilizing photoacoustic transducers to generate special acoustic fields with high signal-to-noise ratios at operating frequencies. © 2025 Institute of Physics Publishing. All rights reserved.

关键词： Laser excitation

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Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

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Light(Science & Applications) 2024年第12期13卷 3041-3051页

作者： Haifeng Wu Xiao Lin Qin Shuai Youliang Zhu Yi Fu Xiaoqin Liao Yazhou Wang Yizhe Wang Chaowei Cheng Yong Liu Lei Sun Xinyi Luo Xiaoli Zhu Liancheng Wang Ziwei Li Xiao Wang Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringSchool of Physics and ElectronicsHunan University410082 ChangshaChina Innovision Technology(Suzhou)Co.Ltd 215000 SuzhouChina Lattice Power(Jiangxi)Corp. 330029 NanchangChina College of Mechanical and Electrical Engineering Central South University410083 ChangshaChina Beijing Digital Optical Device IC Design Co.Ltd 100015 BeijingChina School of Physics and Electronics Hunan Normal University410081 ChangshaChina

Owing to high pixel density and brightness,gallium nitride(GaN)based micro-light-emitting diodes(Micro-LEDs)are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual ***,Micro-LEDs with pixel sizes smaller than 10μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency,resulting in reduced luminous efficiency and severe brightness ***,we reported high-brightness green Micro-displays with a 5μm pixel utilizing highquality GaN-on-Si ***-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate,which possesses a low dislocation density of 5.25×10^(8)cm^(-2),small wafer bowing of 16.7μm,and high wavelength uniformity(standard deviation STDEV<1 nm),scalable to 6-inch *** on the high-quality GaN epilayers,green Micro-LEDs with 5μm pixel sizes are designed with vertical non-alignment bonding *** atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top,which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si ***-high brightness exceeding 107 cd/m2(nits)is thus achieved in the green Micro-LEDs,marking the highest reported ***,integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080×780,realizing high-definition playback of movies and *** work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

关键词： sizes uniform luminous

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry 10

Design of a Three-Dimensional Inlet Structure for Preventing...

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10th International Symposium on Next Generation Electronics, ISNE 2022

作者： Hu, Yu Li, Ya Wang, Xu Du, Ziqiang Zhang, Wenchang Yang, Xiaonan Zhengzhou University School of Electrical and Information Engineering Zhengzhou China The First Affiliated Hospital of Zhengzhou University Department of Gastroenterology Zhengzhou China Institute of Microelectronics of the Chinese Academy Key Laboratory of Microelectronic Devices and Integration Technology Beijing China

ISBN: (纸本)9781665455251

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%. © 2023 IEEE.

关键词： Cells

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Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

Influence Of B Ions Doping on the Performance of P-Type Sili...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Hu, Jiawei Zhang, Qingzhu Wei, Shuhua Zhang, Jing Zhang, Zhaohao Liu, Jin Biao Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Key Laboratory of Microelectronic Devices and Integration Technology Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (Vth) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity. © 2022 IEEE.

关键词： Field effect transistors

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Designing and synthesis of perovskite nanocrystals: a promising wide-spectrum solar light–responsive photocatalyst and lead ion sensor

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Environmental Science and Pollution Research 2024年 1-20页

作者： Ali, Nisar Ahmad, Shakeel Nawaz, Arif Khan, Manzoor Ullah, Aman Idrees, Muhammad Khan, Adnan Khan, Wilayat Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province National & ampLocal Joint Engineering Research Center for Mineral Salt Deep Utilization Huaiyin Institute of Technology Huai’an223003 China Department of Chemistry Bacha Khan University KPK Charsadda Pakistan Institute of Chemical Sciences University of Peshawar Peshawar25120 Pakistan Department of Physics Bacha Khan University KPK Charsadda Pakistan Ibra Oman Henan Key Laboratory of Advanced Semiconductor & amp Functional Device Integration School of Physics Henan Normal University Xinxiang453007 China

Perovskites are an emerging material with a variety of applications, ranging from their solar light conversion capability to their sensing efficiency. In current study, perovskite nanocrystals (PNCs) were designed using theoretical density functional theory (DFT) analysis. Moreover, the theoretically designed PNCs were fabricated and confirmed by various characterization techniques. The calculated optical bandgap from UV–Vis and fluorescence spectra were 2.15 and 2.05 eV, respectively. The average crystallite size of PNCs calculated from Scherrer equation was 15.18 nm, and point of zero charge (PZC) was obtained at pH 8. The maximum eosin B (EB) removal efficiency by PNCs was 99.56% at optimized conditions following first-order kinetics with 0.98 R2 value. The goodness of the response surface methodology (RSM) model was confirmed from analysis of variance (ANOVA), with the experimental F value (named after Ronald Fisher) of 194.66 being greater than the critical F value F0.05, 14, 14 = 2.48 and a lack of fit value of 0.0587. The Stern–Volmer equation with a larger Ksv value of 1.303710×106 for Pb2+ suggests its greater sensitivity for Pb2+ among the different metals tested. Graphical Abstract: (Figure presented.) © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024.

关键词： Perovskite

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Gesture recognition algorithm combining ResNet and ShuffleNet

Gesture recognition algorithm combining ResNet and ShuffleNe...

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2021 International Conference on Internet of Things and Machine Learning, IoTML 2021

作者： Xie, Zhengjiang Lou, Li Jia, Kunpeng Jiao, Binbin School of Computing Xi'an Shiyou University Xi'an Shanxi710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (数字)9781510653269

ISBN: (纸本)9781510653252

Gesture is a form of non-verbal communication and has many applications, such as sign language communication between deaf and dumb people, robot control, human-computer interaction and medical applications. The commonly used acquisition equipment in gesture recognition is the visible light camera, but illumination has a great impact on the accuracy of the collected data classification processing. The whole project designed a complete end-to-end edge computing system design and deployment, the system can achieve from gesture image acquisition to gesture recognition. A dataset of 3600 thermal images was created, and each gesture had 1200 thermal images with only 4∗4 resolution. These images were upsampled by bilinear interpolation and fed into a new lightweight deep learning model combining deep residual learning with ShuffleNet V2 for gesture classification. The system achieved 98.63% accuracy on the test data set. Another advantage is that it is based on thermal imaging, so the accuracy is not affected by background lighting conditions. © SPIE.

关键词： Deep learning

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Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Tian, Jiajia Cao, Zhijun Zhang, Qingzhu Wu, Cinan Zhang, Zhaohao Yin, Huaxiang College of Big Data and Information Engineering Guizhou University Guiyang 550025 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the channel release process of stacked gate-all-around (GAA) nanosheet (NS) devices fabricated based on the epitaxial scheme is investigated extensively. The effects of annealing temperatures, thicknesses of the GeSi layers and liquid nitrogen processing on the wet selective etching of GeSi in multi-layer GeSi/Si samples are mainly studied. It is found that the corrosion rate of the GeSi in GeSi/Si stacks samples first decreases and then increases with the increasement of rapid thermal annealing (RTA) temperatures, and the corrosion rate is the slowest at 600 ° C. In addition, the thicker the epitaxial GeSi, the faster the corrosion rate. Furthermore, we found that the corrosion rate of the samples after liquid nitrogen processing treatment was faster than that without treatment. The research provides a good reference significance for the design and manufacture of advanced stacked GAA Si NS devices. © 2022 IEEE.

关键词： Corrosion rate

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