Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in ...
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Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in the body current(I) versus gate voltage(V) characteristic,therefore the variation of interface states with stress time was *** the Hot Carrier Injection(HO) stress condition,the evident difference of the output current degradation was achieved by interchanging the source and drain of *** phenomenon indicated the asymmetric distribution of the interface states along the channel,and the deduction was demonstrated by extracting the distribution of the interface states ***,the generation of the interface states induce by HCI was estimated from the output characteristic.
＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results ar...
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＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results are compared with the existing theories,proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simula...
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A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in...
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A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to various doping concentrations and geometrical sizes, without any fitting parameter.
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