检索结果-内蒙古大学图书馆

3D Printed Microlens Probe for Optical Coherence Tomography

3D Printed Microlens Probe for Optical Coherence Tomography

2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings, ACP/POEM 2023

作者： Tai, Yalong Li, Zhuorong Liu, Dejun Li, Bozhe Zhu, Rui Li, Jianan Li, Qiang Liu, Haiping Liao, Changrui Wang, Yiping Shenzhen University Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen China College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Key Laboratory of Ultrafast Laser Micro/Nano Manufacturing Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/Guangdong Province Shenzhen China International Graduate School at Shenzhen Tsinghua University Shenzhen China Shenzhen Vivolight Medical Device & Technology Co. Ltd. Shenzhen China Xi'An Institute of Optics and Precision Mechanics Chinese Academy of Sciences State Key Laboratory of Transient Optics and Photonics Xi'an China

ISBN: (纸本)9798350312614

Microsized endoscopy is increasingly demanded in medical clinical diagnosis for imaging in small blood vessels or delicate organs. In this paper, we propose a 3D printed side-viewing microlens on fiber tip by using the femtosecond laser two-photon polymerization (TPP) method for optical coherence tomography (OCT) imaging applications. The printed microlens is only 210 μm in width and 270 μm in height, its measured lateral resolution is around 9.4 μm in air. It is demonstrated that the proposed microlens can easily profile the depth resolved inner structure of a homemade plastic pipe. © 2023 IEEE.

关键词： 3D printing femtosecond laser microlens onfiber Optical coherence tomography two-photon polymerization

来源：评论

学校读者我要写书评

暂无评论

Deterministic single-phonon-to-photon quantum transducer for distributed quantum networks

引用

Physical Review A 2025年第2期111卷 022623-022623页

作者： Zhengyi Yue Tao Li Zhenhua Li keyu Xia MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing School of Physics Nanjing University of Science and Technology Nanjing 210094 China Engineering Research Center of Semiconductor Device Optoelectronic Hybrid Integration in Jiangsu Province Nanjing 210094 China College of Engineering and Applied Sciences National Laboratory of Solid State Microstructures Nanjing University Nanjing 210023 China Shishan Laboratory Suzhou Campus of Nanjing University Suzhou 215000 China

Quantum transducers are essential for connecting hybrid quantum systems with distinct frequencies, pivotal for hybrid quantum networks. A deterministic quantum transducer protocol is proposed for the upconversion of single phonons in the microwave domain to optical photons. Utilizing a hybrid optomechanical crystal coupled to a three-level emitter, the protocol deterministically upconverts an itinerant phonon into an optical photon, when an auxiliary optical cavity mode is driven by a single photon. Furthermore, the deterministic upconversion transducer can also be achieved by driving the emitter with a classical laser pulse, rather than driving the optical cavity with a single photon. The intracavity photon numbers in both protocols are significantly less than one during the operation, thus overcoming the problem of parasitic heating within radiation-pressure coupling of hybrid optomechanical systems. These outstanding features make the protocols particularly useful for the realization of large-scale distributed hybrid quantum networks.

关键词： Phonons

来源：评论

学校读者我要写书评

暂无评论

Simultaneous optimization of lattice and spin configurations in atomic scale simulation of magnetic materials

引用

Physical Review B 2025年第13期111卷 134412-134412页

作者： Zhengtao Huang Teng Yang Hanxing Liu Ben Xu State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Center for Smart Materials and Device Integration School of Material Science and Engineering Wuhan University of Technology Wuhan 430070 People's Republic of China Graduate School of China Academy of Engineering Physics Beijing 100088 People's Republic of China School of Materials Science and Engineering Tsinghua University Beijing 100084 People's Republic of China

Large scale atomistic simulations involving spin-lattice coupling are at the forefront of research in condensed matter physics and materials science. A key challenge lies in determining the ground state configurations of spins and lattices given this strong coupling, complicated by their evolution adherence to distinct governing equations. Unlike first-principles calculations, where the magnetic configuration is naturally determined by minimizing the electronic energy, no existing algorithm can simultaneously optimize both lattice and spin degrees of freedom at the atomic scale. This paper introduces a synergistic optimization framework for lattice and spin optimization in magnetic materials, overcoming the conventional separation approach. Employing a “pseudoatomic” method, the simultaneous optimization of atomic and spin configurations enhances accuracy and speed, enabling both atomic scale precision and large scale calculations. Applied to face-centered-cubic iron and BiFeO3, this approach demonstrates effective convergence, offering a robust tool for complex spin-lattice coupling problems, which paves a path for addressing high-dimensional optimization problems.

关键词： Atoms

来源：评论

学校读者我要写书评

暂无评论

Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

引用

International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

引用

China Semiconductor technology International Conference (CSTIC)

作者： Yang Liu Qingzhu Zhang Junjie Li Cinan Wu Lei Cao Yanna Luo Zhaohao Zhang Shuhua Wei Qianhui Wei Jiaxin Yao Jiawei Hu Meiyan Qin Enxu Liu Yanchu Han LianLian Li YingLu Li Tao Yang Na Zhou Jianfeng Gao Junfeng Li Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China College of Big Data and Information Engineering Guizhou University Guiyang China School of Information Science and Technology North China University of Technology Beijing China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co. Ltd. Beijing China

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1$\times$ PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Piezoelectric ceramics with high piezoelectricity and broad temperature usage range

引用

Journal of Materiomics 2021年第4期7卷 683-692页

作者： Qinghu Guo Fei Li Fangquan Xia Pengbin Wang Xiaoyi Gao Hua Hao Hanxing Liu Huajun Sun Shujun Zhang State Key Laboratory Silicate Materials for Architectures Center for Smart Materials and Device IntegrationSchool of Materials Science and EngineeringWuhan University of TechnologyWuhan430070China Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationXi’an Jiaotong UniversityXi’an710049China School of Chemistry and Chemical Engineering University of JinanJinan250022China Institute for Superconducting and Electronic Materials Australian Institute of Innovative MaterialsUniversity of WollongongNew South Wales2500Australia State Key Laboratory of Advanced Technology for Materials Synthesis and Processing International School of Materials Science and EngineeringWuhan University of TechnologyWuhan430070China

There is a general observation that the Curie temperature and piezoelectric property of the ferroelectric ceramics can be enhanced only at the expense of each other,i.e.,higher piezoelectricity,lower Curie temperature,thus,limits their applications over broad temperature *** this research,Sm-modified 0.15 Pb(Mg_(1/3)Nb_(2/3))O_(3)-(0.85-x)PbZrO_(3)-xPbTiO_(3) ceramics have been studied,where excellent piezoelectric coefficients d33¼720 pC/N,d_(33)*=950 pm/V and high Curie temperature T_(C)=293℃ were simultaneously achieved for x=0.42 composition by designing the morphotropic phase boundary(MPB)with local structural *** particular significance is that a high thermal stability was observed with piezoelectric variation below 20%with temperature up to 280℃,demonstrating that the x=0.42 composition is a good candidate for piezoelectric application over broad temperature range where high temperature stability is *** work provides a good paradigm for designing highperformance piezoelectric ceramics with high thermal stability via a combination of MPB and local structural heterogeneity.

关键词： Piezoelectric ceramics Local structural heterogeneity Electromechanical response Thermal stability

来源：评论

学校读者我要写书评

暂无评论

Dramatically Improved Piezo-Photocatalytic Activity in Pvdf@Bi2moo6/Biobr Composite Films Via Constructing Built-In Polarization Field in Heterojunctions

SSRN

引用

SSRN 2023年

作者： Liu, Ming Liu, Aikun Zhang, Hongjian Li, Shuxuan Zhang, Yong State Key Laboratory of Silicate Materials for Architectures Center for Smart Materials and Device Integration School of Materials Science and Engineering Wuhan University of Technology Wuhan430070 China College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China

The coupling effect of piezo-photocatalytic technology is well demonstrated as a promising strategy for effective degradation of organic pollutants. However, the catalytic efficiency is dramatically limited by the undesirable neutralization of photogenerated electron-hole pairs. Herein, PVDF@Bi2MoO6/BiOBr heterojunction was designed elaborately to boosting their piezo-photocatalytic activity by built-in polarization field and controlled carrier transfer. The composite film presents excellent degradation performance of methyl orange (MO, 15 mg/L) (98.99%, 120 min) under the simultaneous ultrasonic vibration and visible light irradiation, which is around 2 and 3.1 times than that of individual piezoelectric and photocatalytic process. The intrinsic mechanism was revealed and analyzed in detail, that PVDF enhances the built-in piezoelectric field generated by vibrating p-type BiOBr nanosheets, and effectively reduces the recombination efficiency of photogenerated carriers at the p-n heterojunction interface, thereby dramatically improving the catalytic efficiency. This work proposes and demonstrates the very positive role of dual piezoelectricity in modulating the photocatalytic efficiency in semiconductors, which provides a new paradigm for the further development of highly-efficient piezo-photocatalysts to be applied in environmental purification and wastewater treatment. © 2023, The Authors. All rights reserved.

关键词： Bismuth compounds

来源：评论

学校读者我要写书评

暂无评论

Electronic doping induced increase in coercive field of sliding ferroelectric 1T′-ReS2 multilayers

引用

Physical Review B 2025年第10期111卷 104110-104110页

作者： Mingyan Liu Yi Wan Pei Wang Xiaodong Zhang Yunwei Yang Yibin Zhao Hualing Zeng Fang Wu Chengxi Huang MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing School of Physics Nanjing University of Science and Technology Nanjing 210094 China Engineering Research Center of Semiconductor Device Optoelectronic Hybrid Integration in Jiangsu Province Nanjing University of Science and Technology Nanjing 210094 China International Center for Quantum Design of Functional Materials (ICQD) Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 China College of Information Science and Technology Nanjing Forestry University Nanjing 210037 China

The precise manipulation of the coercive field in ferroelectric materials is essential for understanding their intrinsic characteristics and broadening their practical applications. In most displacement-type ferroelectrics, the coercive field typically decreases monotonically with increasing electronic doping levels. However, the modulation of coercive fields in sliding ferroelectrics, due to their unique ferroelectric origins, remains an intriguing and unexplored territory. Here, we demonstrate that the coercive field of sliding ferroelectrics increases with higher levels of electronic doping. Using 1T′-ReS2 multilayers as a model, we show that the density of sulfur vacancies, which can be adjusted through annealing in different atmospheres, governs the extent of charge doping. Piezoresponse force microscopy measurement results reveal that an increase in sulfur vacancy density leads to a higher ferroelectric switching barrier, resulting in a coercive-field enhancement of up to 870 kV/cm. These experimental findings are corroborated by theoretical calculations. Our findings highlight the distinct features of sliding ferroelectrics compared to conventional ones, opening up avenues for innovative applications of sliding ferroelectrics.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

Construction of direct Z-scheme BPQDs-modified BiOBr thin film for enhanced photocatalytic performance under visible light irradiation

引用

Journal of Materiomics 2021年第5期7卷 1122-1130页

作者： Ziyu Yao Huajun Sun Yunlong Hu Xiaofang Liu Yong Zhang State Key Laboratory of Silicate Materials for Architectures Center for Smart Materials and Device IntegrationSchool of Materials Science and EngineeringWuhan University of TechnologyWuhan430070China School of Chemistry Chemical Engineering and Life SciencesWuhan University of TechnologyWuhan430070China Advanced Ceramics Institute of Zibo New&High-Tech Industrial Development Zone Zibo255000China

Surface modification on photocatalytic thin films is long considered as an effective strategy to improve the degradation performance,which in turn helps to alleviate the worldwide environmental pollution *** this study,a direct Z-scheme photocatalytic system is constructed successfully by integrating black phosphorus quantum dots(BPQDs)on the surface of BiOBr thin film prepared by hydrothermal *** optimal BPQDs/BiOBr-1 thin film presents remarkable enhanced photocatalytic activity for degrading methyl violet(MV)and tetracycline hydrochloride(TC),which is 3 and 3.65 times higher than that of pure BiOBr *** active species involved in the reaction are ^(+),·O_(2)^(-),and·OH,which determined by radical trapping *** formation of direct Z-scheme photocatalytic system makes electrons assembled in the conduction band(CB)of BPQDs and holes gathered in the valence band(VB)of BiOBr,which supports the generation of h^(+) and·O_(2)^(-) and in turn accelerates the photocatalytic ***,the improved efficiency of charge separation,enhanced visible light absorption and enlarged specific surface area also contributed to the enhanced photocatalytic performance of BPQDs/*** work provides a feasible strategy for optimizing photocatalytic thin films via detailed analyzing the role of BPQDs in the construction of direct Z-scheme photocatalysts.

关键词： Photocatalytic thin films Direct Z-scheme Surface modification BPQDs BiOBr

来源：评论

学校读者我要写书评

暂无评论

Resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment

引用

Journal of Materials Science & technology 2020年第14期47卷 1-6页

作者： Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He Faculty of Physics and Electronic Science Hubei UniversityHubei Key Laboratory of Ferro-&Piezoelectric Materials and DevicesHubei Key Laboratory of Applied MathematicsWuhan430062China School of Physics and Materials Science Radiation Detection Materials&Device LabAnhui UniversityHefei230039China School of Microelectronics Tianjin Key Laboratory of Imaging and Sensing Microelectronic TechnologyTianjin UniversityTianjin300072China

With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-panel *** this work,1×1μm^2 via hole structure IGZO based memory device was fabricated and the resistive switching(RS)behavior was *** inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device,highly improved RS performance including lower forming voltage,remarkable uniformity,large memory window of 102,retention property of 10^4 s at 125℃,excellent pulse endurance of 10^7 cycles were *** X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO *** is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments,which results in more stable and uniform performance.

关键词： Memory device Resistive switching Plasma treatment Indium-gallium-zinc-oxide Memristor

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：