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IEEE International Nanoelectronics Conference (INEC)

作者： Honghua Xu Xiaoyan Liu Gang Du Yuhui He Chun Fan Ruqi Han Jinfeng Kang Institute of Microelectronics Key Laboratory of Microelectronic Devices and Circuits Ministry of Education Peking University Beijing China Institute of Microelectronics Peking University Beijing China Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Computer Center Peking University Beijing China

ISBN: (纸本)9781424435432;9781424435449

We calculate valence band structures and transport property of HfO 2 gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states' peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases with higher force values.

关键词： FETs Hafnium oxide Dielectrics and electrical insulation Capacitive sensors Effective mass Nanoscale devices Electrodes Lattices Voltage High-K gate dielectrics

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InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

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Journal of Semiconductors 2009年第11期30卷 31-33页

作者：于进勇刘新宇夏洋 Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences Institute of MicroelectronicsChinese Academy of Sciences

Several μ-bridge structures for InP-based heterojunction bipolar transistors （HBTs） are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double p-bridge structures have a better effect. Due to the utilization of the double/^-bridges, both the cutoff frequency fτ and also the maximum oscillation frequency fτ of the 2 × 12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz. The results also show that the μ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

关键词： InP HBT μ-bridge

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A novel negative bias temperature instability model for nanoscale finfet

A novel negative bias temperature instability model for nano...

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

作者： Ma, Chenyue Li, Bo He, Frank Zhang, Xing Lin, Xinnan Research Center of Micro- and Nano- Device and Technology Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University TSRC Beijing 100871 China

ISBN: (纸本)9781424439102

This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the results agree well with the experiments over a wide range of temperature. Finally, the NBTI model of FinFETs is demonstrated through SRAM simulation. ©2009 IEEE.

关键词： Negative bias temperature instability

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A physical based Hot Carrier Injection compact model for nanoscale FinFET

A physical based Hot Carrier Injection compact model for nan...

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作者： Ma, Chenyue Li, Bo Zhang, Lining He, Jin Zhang, Xing Lin, Xinnan Micro- and Nano Electronic Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen China Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education EECS Peking University Beijing China

ISBN: (纸本)9781439817841

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCl) is given in this paper, and a physical based HCl compact model adapted to all the operation modes is presented. It is concluded that in the depletion and weak reverse region, the degradation of carrier mobility is the dominant impact on the current decrease;in the strong inversion region, the current decrease is determined by the loss of inversion charges trapped in the interface states. With the analysis, a compact HCl model for Nanoscale FinFET is derived and validated in both forward and reverse operation mode. The simulation result agrees very well with the measured data.

关键词： FinFET

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An analytic model of the silicon-based nanowire Schottky Barrier MOSFET

An analytic model of the silicon-based nanowire Schottky Bar...

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作者： Zhou, Xingye Che, Yuchi Zhang, Lining He, Jin Chan, Mansun Key Laboratory of Integrated Microsystems Micro and Nano Electronic Device and Integrated Technology Center Shenzhen Graduate School of Peking University Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education School of Electronics Engineering and Computer Science Peking University 100871 China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clearwater Bay Kowloon Hong Kong

ISBN: (纸本)9781439817841

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.

关键词： Nanowires

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

A novel Negative Bias Temperature Instability model for nano...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Chenyue Ma Bo Li Frank He Xing Zhang Xinnan Lin Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Beijing China Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Shenzhen China Peking University Beijing Beijing CN TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China

关键词： Negative bias temperature instability FinFETs Stress Niobium compounds Titanium compounds Charge pumps High K dielectric materials Silicon Voltage Dielectric devices

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A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

A unified FinFET reliability model including high K gate sta...

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IEEE International Symposium on Quality Electronic Design

作者： Chenyue Ma Bo Li Lining Zhang Jin He Xing Zhang Xinnan Lin Mansun Chan TSRC Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education Institute of Microelectronics EECS Peking University Shenzhen China The Micro-& Nano Electronic Device and Integrated Technology Group The Key Laboratory of Integrated Microsystems Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education Institute of Microelectronics EECS Peking University Beijing China Peking University Beijing Beijing CN Department of ECE Hong Kong University of Science and Technology Hong Kong China

A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.

关键词： FinFETs High K dielectric materials High-K gate dielectrics Threshold voltage Hot carrier injection Negative bias temperature instability Circuit simulation Human computer interaction Niobium compounds Titanium compounds

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A Web-Based Platform for Nanoscale Non-classical device Modeling and Circuit Performance Simulation

A Web-Based Platform for Nanoscale Non-classical Device Mode...

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International Conference on Web Information Systems and Mining (WISM)

作者： Hao Zhuang Frank He Xinnan Lin Lining Zhang Jian Zhang Xiufang Zhang Mansun Chan Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China Department of Electronic & Computer Engineering Hong Kong University of Science and Technology Hong Kong China

This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content, running embedding device and circuit programs, the platform produces several types of device characteristics output such as data texts and graphs on the web page for analysis, according to the simulation results and users' requests. Some nanoscale device modeling examples and the circuit simulation cases are demonstrated by the means of the platform configures and function application. It is shown that not only does this kind of platform address problems arising from the dependence on computer operating system of modeling and simulation software, the complexity of software and program update, but also helps researchers focus on their research on device physics and circuit design, display their research results and share latest research achievements or new technology online, which will accelerate the development of device modeling and circuit design technology in turn.

关键词： Nanoscale devices Circuit optimization Circuit simulation Semiconductor device modeling Predictive models Computational modeling Circuit synthesis Libraries SPICE Hardware design languages

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FinFET reliability study by forward gated-diode method

FinFET reliability study by forward gated-diode method

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2008 9th International Conference on Solid-State and Integrated-Circuit technology, ICSICT 2008

作者： Chenyue, Ma. Li, Bo Wei, Yiqun Zhang, Lining He, Jin Zhang, Xing Lin, Xinnan Key Laboratory of Microelectronic Devices and Circuits School of Electronics and Computer Science Peking University 100871 China Micro- and Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen 518055 China

ISBN: (纸本)9781424421855

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (ΔIpeak) in the body current Ib versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the Hot Carrier Injection (HCI) stress condition, the evident difference of the output current degradation was achieved by interchanging the source and drain of FinFET. This phenomenon indicated the asymmetric distribution of the interface states along the channel, and the deduction was demonstrated by extracting the distribution of the interface states subsequently. Moreover, the generation of the interface states induce by HCI was estimated from the output characteristic. © 2008 IEEE.

关键词： Reliability

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A numerical method to simulate THz-wave generation and detection of field-effect transistors

A numerical method to simulate THz-wave generation and detec...

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2008 9th International Conference on Solid-State and Integrated-Circuit technology, ICSICT 2008

作者： Mou, Xuehao Chen, Yu Chenyue, Ma. Che, Yuchi He, Jin TSRC Key Laboratory of Microelectronic Devices and Circuits School of Electronics and Computer Science Peking University 100871 China Micro and Nano Electric Device and Integarted Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen 518055 China

ISBN: (纸本)9781424421855

A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield. © 2008 IEEE.

关键词： Numerical methods

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